概述
数据手册2N3906/D 概述
General Purpose Transistors
通用晶体管\n
2N3906/D 数据手册
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Preferred Device
General Purpose
Transistors
PNP Silicon
http://onsemi.com
COLLECTOR
3
MAXIMUM RATINGS
Rating
Symbol
Value
40
Unit
Vdc
2
BASE
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V
CEO
V
CBO
V
EBO
40
Vdc
1
EMITTER
5.0
Vdc
Collector Current – Continuous
I
C
200
mAdc
STYLE 1
Total Device Dissipation
P
D
@ T = 25°C
625
5.0
mW
mW/°C
A
Derate above 25°C
TO–92
CASE 29
STYLE 1
Total Power Dissipation
P
P
250
mW
D
@ T = 60°C
A
1
2
Total Device Dissipation
D
3
@ T = 25°C
1.5
12
Watts
mW/°C
C
Derate above 25°C
MARKING DIAGRAMS
Operating and Storage Junction
Temperature Range
T , T
J stg
–55 to
+150
°C
2N
3906
YWW
THERMAL CHARACTERISTICS (Note 1.)
Characteristic Symbol
Thermal Resistance,
Max
Unit
R
R
200
°C/W
θJA
Junction to Ambient
Y
WW
= Year
= Work Week
Thermal Resistance,
Junction to Case
83.3
°C/W
θJC
1. Indicates Data in addition to JEDEC Requirements.
ORDERING INFORMATION
Device
2N3906
Package
TO–92
TO–92
TO–92
TO–92
TO–92
TO–92
TO–92
Shipping
5000 Units/Box
2N3906RLRA
2N3906RLRE
2N3906RLRM
2N3906RLRP
2N3906RL1
2000/Tape & Reel
2000/Tape & Reel
2000/Ammo Pack
2000/Ammo Pack
2000/Tape & Reel
2000/Ammo Pack
2N3906ZL1
Preferred devices are recommended choices for future use
and best overall value.
Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
November, 2001 – Rev. 0
2N3906/D
2N3906
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (Note 2.) (I = 1.0 mAdc, I = 0)
V
V
40
40
5.0
–
–
–
Vdc
Vdc
C
B
(BR)CEO
Collector–Base Breakdown Voltage (I = 10 mAdc, I = 0)
C
E
(BR)CBO
Emitter–Base Breakdown Voltage (I = 10 mAdc, I = 0)
V
(BR)EBO
–
Vdc
E
C
Base Cutoff Current (V
CE
= 30 Vdc, V
= 3.0 Vdc)
I
50
50
nAdc
nAdc
EB
BL
Collector Cutoff Current (V
CE
= 30 Vdc, V
= 3.0 Vdc)
I
–
EB
CEX
ON CHARACTERISTICS (Note 2.)
DC Current Gain
h
FE
–
(I = 0.1 mAdc, V
= 1.0 Vdc)
= 1.0 Vdc)
= 1.0 Vdc)
= 1.0 Vdc)
60
80
100
60
–
–
300
–
C
CE
CE
CE
CE
(I = 1.0 mAdc, V
C
(I = 10 mAdc, V
C
(I = 50 mAdc, V
C
(I = 100 mAdc, V
CE
= 1.0 Vdc)
30
–
C
Collector–Emitter Saturation Voltage
(I = 10 mAdc, I = 1.0 mAdc)
V
Vdc
Vdc
CE(sat)
–
–
0.25
0.4
C
B
(I = 50 mAdc, I = 5.0 mAdc
C
B
Base–Emitter Saturation Voltage
(I = 10 mAdc, I = 1.0 mAdc)
V
BE(sat)
0.65
–
0.85
0.95
C
C
B
B
(I = 50 mAdc, I = 5.0 mAdc)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product
f
MHz
T
(I = 10 mAdc, V
C
= 20 Vdc, f = 100 MHz)
250
–
–
CE
Output Capacitance (V
= 5.0 Vdc, I = 0, f = 1.0 MHz)
C
obo
4.5
10
12
pF
pF
kΩ
CB
E
Input Capacitance (V
= 0.5 Vdc, I = 0, f = 1.0 MHz)
C
–
EB
C
ibo
Input Impedance (I = 1.0 mAdc, V
C
= 10 Vdc, f = 1.0 kHz)
h
2.0
CE
ie
–4
Voltage Feedback Ratio
h
X 10
re
(I = 1.0 mAdc, V
= 10 Vdc, f = 1.0 kHz)
0.1
10
C
CE
Small–Signal Current Gain
(I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz)
h
–
fe
100
3.0
400
60
C
CE
Output Admittance (I = 1.0 mAdc, V
C
= 10 Vdc, f = 1.0 kHz)
h
oe
mmhos
CE
Noise Figure
NF
dB
(I = 100 mAdc, V
C CE
= 5.0 Vdc, R = 1.0 kΩ, f = 1.0 kHz)
–
4.0
S
SWITCHING CHARACTERISTICS
Delay Time
t
t
–
–
35
35
ns
ns
ns
d
(V
I
= 3.0 Vdc, V
= 0.5 Vdc,
BE
CC
= 10 mAdc, I = 1.0 mAdc)
C
B1
= 3.0 Vdc, I = 10 mAdc,
Rise Time
t
r
Storage Time
(V
I
CC
C
s
= I = 1.0 mAdc)
–
–
225
75
B1 B2
Fall Time
(V
I
= 3.0 Vdc, I = 10 mAdc,
t
f
ns
CC
C
= I = 1.0 mAdc)
B1 B2
2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2%.
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2
2N3906
3 V
3 V
< 1 ns
+9.1 V
275
C
275
C
< 1 ns
+0.5 V
10 k
10 k
0
< 4 pF*
< 4 pF*
S
S
1N916
10.6 V
300 ns
10 < t < 500 ms
1
t
1
10.9 V
DUTY CYCLE = 2%
DUTY CYCLE = 2%
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
T
T
= 25°C
= 125°C
J
J
10
5000
V
CC
I /I = 10
= 40 V
3000
2000
7.0
C B
C
5.0
obo
1000
700
C
ibo
500
3.0
2.0
300
200
Q
T
Q
A
100
70
1.0
0.1
50
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 40
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
200
REVERSE BIAS (VOLTS)
I , COLLECTOR CURRENT (mA)
C
Figure 3. Capacitance
Figure 4. Charge Data
500
500
I /I = 10
C B
V
I
= 40 V
CC
= I
300
200
300
200
B1 B2
I /I = 20
C B
100
70
100
70
t @ V = 3.0 V
r CC
50
50
15 V
30
20
30
20
I /I = 10
C B
40 V
10
10
7
2.0 V
7
5
t
d
@ V = 0 V
OB
5
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
200
200
1.0
2.0 3.0 5.0 7.0 10
20 30 50
70 100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 6. Fall Time
Figure 5. Turn–On Time
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3
2N3906
TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(V
= –5.0 Vdc, T = 25°C, Bandwidth = 1.0 Hz)
CE
A
5.0
4.0
3.0
2.0
1.0
0
12
SOURCE RESISTANCE = 200 W
= 1.0 mA
f = 1.0 kHz
I
= 1.0 mA
C
I
C
10
I
C
= 0.5 mA
SOURCE RESISTANCE = 200 W
= 0.5 mA
I
C
8
6
4
2
0
SOURCE RESISTANCE = 2.0 k
= 50 mA
I
C
I
= 50 mA
C
SOURCE RESISTANCE = 2.0 k
= 100 mA
I
= 100 mA
C
I
C
0.1 0.2
0.4
1.0 2.0 4.0
10
20
40
100
0.1 0.2
0.4
1.0 2.0
4.0
10
20
40
100
f, FREQUENCY (kHz)
R , SOURCE RESISTANCE (k OHMS)
g
Figure 7.
Figure 8.
h PARAMETERS
(V
= –10 Vdc, f = 1.0 kHz, T = 25°C)
CE
A
300
200
100
70
50
30
20
100
70
10
7
50
30
5
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 9. Current Gain
Figure 10. Output Admittance
20
10
10
7.0
5.0
7.0
5.0
3.0
2.0
3.0
2.0
1.0
0.7
0.5
1.0
0.7
0.5
0.3
0.2
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 11. Input Impedance
Figure 12. Voltage Feedback Ratio
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4
2N3906
TYPICAL STATIC CHARACTERISTICS
2.0
1.0
T
= +125°C
J
V
CE
= 1.0 V
+25°C
0.7
0.5
-ā55°C
0.3
0.2
0.1
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
20
30
50
70 100
200
I , COLLECTOR CURRENT (mA)
C
Figure 13. DC Current Gain
1.0
0.8
0.6
0.4
T
= 25°C
J
I
C
= 1.0 mA
10 mA
30 mA
100 mA
0.2
0
0.01
0.02
0.03
0.05 0.07 0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
I , BASE CURRENT (mA)
B
Figure 14. Collector Saturation Region
1.0
0.8
0.6
1.0
T
= 25°C
V
@ I /I = 10
J
BE(sat) C B
0.5
0
+25°C TO +125°C
-ā55°C TO +25°C
q
FOR V
VC
CE(sat)
V
BE
@ V = 1.0 V
CE
-ā0.5
-ā1.0
+25°C TO +125°C
-ā55°C TO +25°C
0.4
0.2
0
V
CE(sat)
@ I /I = 10
C B
q
FOR V
BE(sat)
VB
-ā1.5
-ā2.0
1.0
2.0 5.0
10
20
50
100
200
0
20
40
60
80 100 120 140 160 180 200
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 15. “ON” Voltages
Figure 16. Temperature Coefficients
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5
2N3906
PACKAGE DIMENSIONS
TO–92
TO–226AA
CASE 29–11
ISSUE AL
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
A
B
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
P
L
INCHES
DIM MIN MAX
MILLIMETERS
SEATING
PLANE
K
MIN
4.45
4.32
3.18
0.407
1.15
2.42
0.39
12.70
6.35
2.04
---
MAX
5.20
5.33
4.19
0.533
1.39
2.66
0.50
---
A
B
C
D
G
H
J
0.175
0.170
0.125
0.016
0.045
0.095
0.015
0.500
0.250
0.080
---
0.205
0.210
0.165
0.021
0.055
0.105
0.020
---
D
X X
G
J
H
V
K
L
---
---
C
N
P
R
V
0.105
0.100
---
2.66
2.54
---
SECTION X–X
0.115
0.135
2.93
3.43
1
N
---
---
N
STYLE 1:
PIN 1. EMITTER
2. BASE
STYLE 14:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
3. COLLECTOR
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6
2N3906
Notes
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7
2N3906
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
Literature Fulfillment:
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For additional information, please contact your local
Sales Representative.
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2N3906/D
2N3906/D 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| 2N3906/D10Z-18 | TI | 40V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3 | 获取价格 |
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| 2N3906/D10Z-J14Z | TI | 40V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3 | 获取价格 |
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| 2N3906/D10Z-J22Z | TI | 40V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3 | 获取价格 |
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| 2N3906/D10Z-J25Z | TI | 40V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3 | 获取价格 |
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| 2N3906/D10Z-J61Z | TI | 40V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3 | 获取价格 |
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| 2N3906/D11Z | TI | 200mA, 40V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 | 获取价格 |
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| 2N3906/D11Z-J61Z | TI | 40V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3 | 获取价格 |
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| 2N3906/D26Z | TI | 200mA, 40V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 | 获取价格 |
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| 2N3906/D26Z-5 | TI | 40V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3 | 获取价格 |
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