select brandShort,logo,brand from pdf_brand where id=2 limit 1 2N5091_技术文档

2N5091 [ETC]

TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 1A I(C) | TO-5 ; 晶体管| BJT | PNP | 300V V（ BR ） CEO | 1A I（C ） | TO- 5\n

2N5091


型号：	2N5091
厂家：	ETC
描述：	TRANSISTOR \| BJT \| PNP \| 300V V(BR)CEO \| 1A I(C) \| TO-5 晶体管\| BJT \| PNP \| 300V V（ BR ） CEO \| 1A I（C ） \| TO- 5\n 晶体晶体管
文件：	总1页 (文件大小：154K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

相关型号：

2N5091A

HIGH VOLTAGE SILICON DIFFUSED PNP TRANSISTORS

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SSDI

2N5092

NPN TO-39/TO-5

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NJSEMI

2N5093

TRANSISTOR | BJT | PNP | 350V V(BR)CEO | 1A I(C) | TO-5

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ETC

2N5093A

HIGH VOLTAGE SILICON DIFFUSED PNP TRANSISTORS

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SSDI

2N5094

HIGH ENERCY NPN TRANSISTOR

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ETC

2N5094A

HIGH VOLTAGE SILICON DIFFUSED PNP TRANSISTORS

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SSDI

2N5095

Bipolar NPN Device in a Hermetically sealed TO39 Metal Package

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SEME-LAB

2N5095

1 AMP HIGH VOLTAGE NPN TRANSISTOR 500-600 VOLTS

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SSDI

2N5095

NPN TO-39/TO-5

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NJSEMI

2N5096

SI PNP POWER BJT

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NJSEMI

2N5096

HIGH VOLTAGE PNP TRANSISTOR

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SEME-LAB

2N5096A

HIGH VOLTAGE SILICON DIFFUSED PNP TRANSISTORS

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SSDI

2N5096E3

Power Bipolar Transistor, 1A I(C), 500V V(BR)CEO, PNP, Silicon, TO-5, Metal, 3 Pin,

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MICROSEMI

2N5097

1 AMP HIGH VOLTAGE NPN TRANSISTOR 500-600 VOLTS

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SSDI

2N5097

Bipolar NPN Device in a Hermetically sealed TO39

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SEME-LAB

2N5097

NPN TO-39/TO-5

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NJSEMI

2N5097

Power Bipolar Transistor, 1A I(C), 600V V(BR)CEO, NPN, Silicon, TO-5, Metal, 3 Pin, TO-5, 3 PIN

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MICROSEMI

2N5097S

Bipolar NPN Device in a Hermetically sealed TO39

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SEME-LAB

2N5098

NPN TO-39/TO-5

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NJSEMI

2N5098

Power Bipolar Transistor, 1A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, Metal, 3 Pin

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MICROSEMI

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