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2N5927 [ETC]

TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 100A I(C) | TO-114 ; 晶体管| BJT | NPN | 120V V（ BR ） CEO | 100A I（C ） | TO- 114\n
2N5927
元器件型号： 2N5927
生产厂家： ETC    ETC
描述和应用：

TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 100A I(C) | TO-114
晶体管| BJT | NPN | 120V V（ BR ） CEO | 100A I（C ） | TO- 114\n

晶体 晶体管
PDF文件： 总2页 (文件大小：137K)
下载文档：  下载PDF数据表文档文件
型号参数：2N5927参数
 查看货源

2N5928

 TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 100A I(C) | TO-114

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41 ETC

2N5928

 SILICON NPN TRANSISTOR

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68 NJSEMI

2N5929

 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 30A I(C) | TO-3VAR

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13 ETC

2N5929

 Bipolar NPN Device in a Hermetically sealed TO3

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22 SEME-LAB

2N593

 BIDIRECTIONAL TRANSISTOR

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20 NJSEMI

2N5930

 Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

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16 SEME-LAB

2N5930

 Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

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16 SEME-LAB

2N5930

 Power Bipolar Transistor, 30A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin

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0 MICROSEMI

2N5931

 TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 30A I(C) | TO-3VAR

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19 ETC

2N5931

 Power Bipolar Transistor, 30A I(C), 160V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL CAN-2

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0 MICROSEMI

2N5932

 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 30A I(C) | TO-3VAR

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23 ETC

2N5932

 Bipolar NPN Device in a Hermetically sealed TO3

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22 SEME-LAB

2N5932

 Power Bipolar Transistor, 30A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin

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0 MICROSEMI

2N5933

 Bipolar NPN Device

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16 SEME-LAB

2N5933

 Bipolar NPN Device

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18 SEME-LAB
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