2N660 [ETC]

alloy-junction germanium transistors; 合金结的锗晶体管
2N660
型号: 2N660
厂家: ETC    ETC
描述:

alloy-junction germanium transistors
合金结的锗晶体管

晶体 晶体管
文件: 总3页 (文件大小:269K)
下载:  下载PDF数据表文档文件

2N6603

L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR

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0 MOTOROLA

2N6603

RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN

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0 MOTOROLA

2N6604

TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 50MA I(C) | SOT-100VAR

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42 ETC

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13 CENTRAL

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16 CENTRAL

2N6605

SILICON CONTROLLED RECTIFIER 0.35 AMP, 30 THRU 200 VOLTS

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12 CENTRAL

2N6606

SILICON CONTROLLED RECTIFIER 0.35 AMP, 30 THRU 200 VOLTS

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15 CENTRAL

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13 CENTRAL

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16 CENTRAL

2N6606LEADFREE

Silicon Controlled Rectifier, 1.6A I(T)RMS, 60V V(RRM), 1 Element, TO-18,

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0 CENTRAL

2N6606LEADFREE

Silicon Controlled Rectifier, 1.6A I(T)RMS, 60V V(RRM), 1 Element, TO-18,

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0 CENTRAL

2N6606TIN/LEAD

Silicon Controlled Rectifier,

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0 CENTRAL

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16 CENTRAL

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16 CENTRAL

2N6607

SILICON CONTROLLED RECTIFIER 0.35 AMP, 30 THRU 200 VOLTS

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7 CENTRAL