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2N6781 [ETC]

TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 3.5A I(D) | TO-39 ; 晶体管| MOSFET | N沟道| 60V V（ BR ） DSS | 3.5AI （D ） | TO- 39\n
2N6781
元器件型号： 2N6781
生产厂家： ETC    ETC
描述和应用：

TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 3.5A I(D) | TO-39
晶体管| MOSFET | N沟道| 60V V（ BR ） DSS | 3.5AI （D ） | TO- 39\n

晶体 晶体管
PDF文件： 总2页 (文件大小：136K)
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型号参数：2N6781参数
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2N6782

 N-CHANNEL MOSFET

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86 MICROSEMI

2N6782

 N-CHANNEL MOSFET

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33 MICROSEMI

2N6782

 N–CHANNEL POWER MOSFET ENHANCEMENT MODE

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34 SEME-LAB

2N6782

 N-CHANNEL POWER MOSFET

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148 SEME-LAB

2N6782

 N-CHANNEL POWER MOSFET ENHANCEMENT MODE

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35 NJSEMI

2N6782_01

 N–CHANNEL POWER MOSFET ENHANCEMENT MODE

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20 SEME-LAB

2N6782_11

 N-CHANNEL MOSFET

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10 MICROSEMI

2N6782_12

 This family of 2N6782, 2N6784 and 2N6786 switching transistors are military qualified up to the JANTXV level for high-reliability applications.

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24 MAS

2N6782LCC4

 N–CHANNEL POWER MOSFET

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10 SEME-LAB

2N6782LCC4

 N-CHANNEL POWER MOSFET

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20 SEME-LAB

2N6782LCC4_07

 N–CHANNEL POWER MOSFET

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9 SEME-LAB

2N6782TX

 Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF

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1 IRF

2N6782TXV

 Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF

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0 FAIRCHILD

2N6782TXV

 Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF

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0 IRF

2N6782U

 N-CHANNEL MOSFET

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9 MICROSEMI
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