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元器件品牌
2N6781
[ETC]
N-CHANNEL ENHANCEMENT-MODE D-MOS PWER FETS; N沟道增强模式D- MOS场效应管PWER
元器件型号：
2N6781
生产厂家：
ETC
描述和应用：
N-CHANNEL ENHANCEMENT-MODE D-MOS PWER FETS
N沟道增强模式D- MOS场效应管PWER
PDF文件：
总3页 (文件大小：103K)
下载文档：
下载PDF数据表文档文件
型号参数：2N6781参数
查看货源
2N6782
N-CHANNEL MOSFET
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MICROSEMI
2N6782
N-CHANNEL MOSFET
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33
MICROSEMI
2N6782
N–CHANNEL POWER MOSFET ENHANCEMENT MODE
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SEME-LAB
2N6782
N-CHANNEL POWER MOSFET
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148
SEME-LAB
2N6782
N-CHANNEL POWER MOSFET ENHANCEMENT MODE
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35
NJSEMI
2N6782_01
N–CHANNEL POWER MOSFET ENHANCEMENT MODE
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20
SEME-LAB
2N6782_11
N-CHANNEL MOSFET
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10
MICROSEMI
2N6782_12
This family of 2N6782, 2N6784 and 2N6786 switching transistors are military qualified up to the JANTXV level for high-reliability applications.
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24
MAS
2N6782LCC4
N–CHANNEL POWER MOSFET
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156
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10
SEME-LAB
2N6782LCC4
N-CHANNEL POWER MOSFET
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156
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20
SEME-LAB
2N6782LCC4_07
N–CHANNEL POWER MOSFET
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156
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9
SEME-LAB
2N6782TX
Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
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1
IRF
2N6782TXV
Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
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156
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0
FAIRCHILD
2N6782TXV
Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
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156
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0
IRF
2N6782U
N-CHANNEL MOSFET
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9
MICROSEMI
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