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2SB1106 [ETC]

TRANSISTOR | BJT | DARLINGTON | PNP | 120V V(BR)CEO | 6A I(C) | TO-220AB ; 晶体管| BJT |达林顿| PNP | 120V V（ BR ） CEO | 6A I（C ） | TO- 220AB\n
2SB1106
元器件型号： 2SB1106
生产厂家： ETC    ETC
描述和应用：

TRANSISTOR | BJT | DARLINGTON | PNP | 120V V(BR)CEO | 6A I(C) | TO-220AB
晶体管| BJT |达林顿| PNP | 120V V（ BR ） CEO | 6A I（C ） | TO- 220AB\n

晶体 晶体管 放大器 局域网
PDF文件： 总6页 (文件大小：43K)
下载文档：  下载PDF数据表文档文件
型号参数：2SB1106参数
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2SB1106_15

 Silicon PNP Power Transistors

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0 JMNIC

2SB1106_2014

 Silicon PNP Power Transistors

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0 JMNIC

2SB1108

 Medium Speed Switching Complementary Pair with 2SD1608

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64 PANASONIC

2SB1109

 SILICON PNP EPITAXIAL (LOW FREQUENCY HIGH VOLTAGE AMPLIFIER)

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93 HITACHI

2SB1109B

 TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 100MA I(C) | TO-126

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25 ETC

2SB1109C

 TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 100MA I(C) | TO-126

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24 ETC

2SB1109D

 TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 100MA I(C) | TO-126

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24 ETC

2SB1110

 SILICON PNP EPITAXIAL (LOW FREQUENCY HIGH VOLTAGE AMPLIFIER)

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46 HITACHI

2SB1110B

 TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 100MA I(C) | TO-126

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7 ETC

2SB1110C

 TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 100MA I(C) | TO-126

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14 ETC

2SB1110D

 TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 100MA I(C) | TO-126

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9 ETC

2SB1114

 PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

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69 NEC

2SB1114

 PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

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86 NEC

2SB1114

 PNP Silicon Epitaxial Transistor

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59 KEXIN

2SB1114

 World standard miniature package. High DC current gain hFE=135 to 600.

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6 TYSEMI
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