2SB792T [ETC]
TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 50MA I(C) | TO-236AB ; 晶体管| BJT | PNP | 150V V（ BR ） CEO | 50MA I（C ） | TO- 236AB\n
| 型号： | 2SB792T |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 50MA I(C) | TO-236AB
|
| 文件： | 总3页 (文件大小：65K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistor
2SB0792, 2SB0792A (2SB792, 2SB792A)
Silicon PNP epitaxial planer type
For high breakdown voltage low-noise amplification
Unit: mm
Complementary to 2SD0814 (2SD814)
2.8 +–00..32
0.65 0.15
1.5 +–00..0255
0.65 0.15
Features
High collector to emitter voltage VCEO
Low noise voltage NV.
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
I
G
.
G
1
2
G
3
Absolute Maximum Ratings (Ta=25˚C)
I
Parameter
Symbol
Ratings
–150
–185
–150
–185
–5
Unit
Collector to
2SB0792
2SB0792A
2SB0792
0.1 to 0.3
0.4 0.2
VCBO
V
base voltage
Collector to
VCEO
V
emitter voltage 2SB0792A
Emitter to base voltage
Peak collector current
Collector current
VEBO
ICP
IC
V
mA
mA
mW
˚C
1:Base
2:Emitter
JEDEC:TO–236
EIAJ:SC–59
–100
–50
3:Collector
Mini Type Package
(2SB0792)
Marking symbol : I
Collector power dissipation
Junction temperature
Storage temperature
PC
200
(2SB0792A)
2F
Tj
150
Tstg
–55 ~ +150
˚C
Electrical Characteristics (Ta=25˚C)
I
Parameter
Symbol
ICBO
Conditions
min
typ
max
Unit
Collector cutoff current
VCB = –100V, IE = 0
–1
µA
Collector to emitter 2SB0792
–150
–185
–5
VCEO
VEBO
IC = –100µA, IB = 0
IE = –10µA, IC = 0
V
V
voltage
2SB0792A
Emitter to base voltage
Forward current
transfer ratio
2SB0792
130
130
450
330
–1
*
hFE
VCE = –5V, IC = –10mA
2SB0792A
Collector to emitter saturation voltage VCE(sat)
IC = –30µA, IB = –3mA
V
MHz
pF
Transition frequency
fT
VCB = –10V, IE = 10mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
VCE = –10V, IC = –1mA, GV = 80dB,
Rg = 100kΩ, Function = FLAT
200
4
Collector output capacitance
Cob
Noise voltage
NV
150
mV
*hFE Rank classification
Rank
hFE
R
S
T
130 ~ 220
IR
185 ~ 330
IS
260 ~ 450
2SB0792
IT
—
Marking
Symbol
Note.) The Part numbers in the Parenthesis show
conventional part number.
2SB0792A
2FR
2FS
1
Transistor
2SB0792, 2SB0792A
PC — Ta
IC — VCE
IC — VBE
240
200
160
120
80
–100
–90
–80
–70
–60
–50
–40
–30
–20
–10
0
–120
VCE=–5V
Ta=25˚C
IB=–10mA
25˚C
Ta=75˚C
–9mA
–100
–80
–60
–40
–20
0
–8mA
–7mA
–6mA
–5mA
–4mA
–3mA
–25˚C
–2mA
–1mA
40
0
0
20 40 60 80 100 120 140 160
0
–2
–4
–6
–8
–10 –12
0
– 0.4 – 0.8
–1.2
–1.6
–2.0
(
)
(
)
( )
Base to emitter voltage VBE V
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
V
VCE(sat) — IC
hFE — IC
fT — IE
–100
600
250
225
200
175
150
125
100
75
VCB=–10V
Ta=25˚C
IC/IB=10
VCE=–5V
–30
–10
500
400
300
200
100
0
–3
–1
Ta=75˚C
25˚C
Ta=75˚C
25˚C
– 0.3
– 0.1
–25˚C
–25˚C
50
– 0.03
– 0.01
25
0
0.1
– 0.1 – 0.3
–1
–3
–10 –30 –100
–0.1 –0.3
–1
–3
–10 –30 –100
0.3
1
3
10
30
100
(
)
(
)
(
)
Collector current IC mA
Collector current IC mA
Emitter current IE mA
Cob — VCB
10
9
8
7
6
5
4
3
2
1
0
IE=0
f=1MHz
Ta=25˚C
–1
–3
–10
–30
–100
( )
V
Collector to base voltage VCB
2
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Consult our sales staff in advance for information on the following applications:
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make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage and heat radiation characteristics. Other-
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2001 MAR
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