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2SC3391B [ETC]

TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 20MA I(C) | SPAK ; 晶体管| BJT | NPN | 20V V（ BR ） CEO | 20MA I（C ） | SPAK\n
2SC3391B
元器件型号： 2SC3391B
生产厂家： ETC    ETC
描述和应用：

TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 20MA I(C) | SPAK
晶体管| BJT | NPN | 20V V（ BR ） CEO | 20MA I（C ） | SPAK\n

晶体 晶体管
PDF文件： 总5页 (文件大小：24K)
下载文档：  下载PDF数据表文档文件
型号参数：2SC3391B参数
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2SC3391-B

 VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR

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0 HITACHI

2SC3391BRF

 RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, SPAK-3

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0 HITACHI

2SC3391BRR

 RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, SPAK-3

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0 HITACHI

2SC3391C

 TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 20MA I(C) | SPAK

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22 ETC

2SC3391-C

 VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR

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0 HITACHI

2SC3391-C

 VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR

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0 HITACHI

2SC3391CRF

 暂无描述

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0 HITACHI

2SC3391CRR

 暂无描述

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0 HITACHI

2SC3391CTZ

 暂无描述

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0 HITACHI

2SC3391RF

 Si, NPN, RF SMALL SIGNAL TRANSISTOR

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0 RENESAS

2SC3391TZ

 RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Silicon, NPN

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0 HITACHI

2SC3392

 High-Speed Switching Applications

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106 SANYO

2SC3392

 NPN Epitaxial Planar Silicon Transistors

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51 KEXIN

2SC3392

 Adoption of FBET process. High breakdown voltage : VCEO=50V.

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23 TYSEMI

2SC3392_15

 NPN Transistors

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0 KEXIN
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