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2SC3649T [ETC]

TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | TO-247 ; 晶体管| BJT | NPN | 160V V（ BR ） CEO | 1.5AI （ C） | TO- 247\n

2SC3649T


元器件型号：	2SC3649T
生产厂家：	ETC
描述和应用：	TRANSISTOR \| BJT \| NPN \| 160V V(BR)CEO \| 1.5A I(C) \| TO-247 晶体管\| BJT \| NPN \| 160V V（ BR ） CEO \| 1.5AI （ C） \| TO- 247\n 晶体晶体管开关
PDF文件：	总4页 (文件大小：143K)
下载文档：	下载PDF数据表文档文件
型号参数：2SC3649T参数

2SC3649-T

NPN Transistors

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0 KEXIN

2SC3649-T-HF

NPN Transistors

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0 KEXIN

2SC3649T-TD-E

Bipolar Transistor

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0 ONSEMI

2SC3649T-TD-H

Bipolar Transistor

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0 ONSEMI

2SC3650

High-hFE, Low-Frequency General-Purpose Amp Applications

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121 SANYO

2SC3650

TRANSISTOR (NPN)

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17 HTSEMI

2SC3650

NPN Epitaxial Planar Silicon Transistor

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37 KEXIN

2SC3650

NPN Silicon Epitaxial Planar Transistor

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26 SECOS

2SC3650

High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation voltage

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13 TYSEMI

2SC3650(SOT-89-3L)

Transistor

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0 JIANGSU

2SC3650_11

1.2 A , 30 V NPN Plastic-Encapsulate Transistor

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17 SECOS

2SC3650_15

TRANSISTOR

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1 WINNERJOIN

2SC3651

NPN Epitaxial Planar Silicon Transistors

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39 KEXIN

2SC3651

High hFE, Low-Frequency General-Purpose Amplifier Applications

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25 SANYO

2SC3651

High-hFE, Low-Frequency General-Purpose Amp Applications

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58 SANYO

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