2SC4774T106S [ETC]
BJT ; BJT\n
| 型号： | 2SC4774T106S |
| 厂家： | 
ETC |
| 描述： | BJT
|
| 文件： | 总1页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC4774 / 2SC4713K
Transistors
High frequency amplifier transistor,
RF switching (60V, 50mA)
2SC4774 / 2SC4713K
!External dimensions (Units : mm)
!Features
1) Very low output-on resistance (Ron).
2) Low capacitance.
2SC4774
1.25
2.1
!Absolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
Limits
Unit
V
V
V
V
CBO
CEO
EBO
12
6
3
V
V
0.1Min.
I
C
50
mA
Each lead has same dimensions
2SC4774
2SC4713K
0.15
0.2
Collector power
dissipation
W
P
C
ROHM : UMT3
EIAJ : SC-70
(1) Emitter
(2) Base
(3) Collector
Junction temperature
Storage temperature
Tj
150
°C
°C
Tstg
−55~+150
2SC4713K
!Packaging specifications and hFE
Type
2SC4774
2SC4713K
Package
UMT3
S
SMT3
S
hFE
Marking
Code
BM
BM
∗
∗
1.6
T106
3000
T146
3000
2.8
Basic ordering unit (pieces)
Denotes hFE
∗
0.3Min.
Each lead has same dimensions
ROHM : SMT3
EIAJ : SC-59
(1) Emitter
(2) Base
(3) Collector
!Electrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
BVCBO
BVCEO
BVEBO
12
6
−
−
−
−
−
−
−
800
1
−
−
−
0.5
0.5
0.3
560
−
V
V
I
I
I
C
=10µA
=1mA
C
3
V
E
=10µA
CB=10V
EB=2V
I
CBO
EBO
CE(sat)
−
−
−
270
300
−
µA
µA
V
V
V
Emitter cutoff current
I
Collector-emitter saturation voltage
DC current transfer ratio
V
I
C
/I
CE/I
CE=5V, I
CB=10V, I
=3mA, V =100mVrms, f=500kHz
B
=10mA/1mA
=10V/10mA
=10mA
=0A, f=1MHz
h
FE
T
−
V
V
V
C
Transition frequency
f
MHz
pF
Ω
C
Output capacitance
Cob
Ron
1.7
−
E
Output-on resistance
−
2
I
B
I
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