2SC4938B [ETC]
TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 5A I(C) | TO-263AA ; 晶体管| BJT | NPN | 400V V（ BR ） CEO | 5A I（C ） | TO- 263AA\n
| 型号： | 2SC4938B |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 5A I(C) | TO-263AA
|
| 文件： | 总1页 (文件大小：55K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC4938
Transistors
High-voltage Switching Transistor
(400V, 5A)
2SC4938
!Features
!External dimensions (Units : mm)
CE(sat)
C
B
1) Low V
. (Typ. 0.6V at I / I =5/1A)
13.1
3.2
C
2) Fast switching. (tf :Max.1µs at I =4A)
3) Wide SOA. (safe operating area)
8.8
(1) Base
(2) Collector
(3) Emitter
ROHM : PSD3
0.5Min.
EIAJ : SC-83A
!Absolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
Limits
Unit
VCBO
VCEO
VEBO
400
400
V
V
7
V
I
C
5
7
A
Collector current
I
CP
A
W
∗
1.5
P
C
Collector power dissipation
W(Tc=25˚C)
35
Junction temperature
Storage temperature
Tj
150
˚C
˚C
Tstg
-55~+150
Single pulse, Pw=100ms.
∗
!Packaging specifications and hFE
Type
2SC4938
PSD3
B
Package
hFE
Code
Basic ordering unit (pieces)
TL
1000
!Electrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
BVCBO
BVCEO
BVEBO
400
400
-
-
-
-
V
V
I
I
I
C
=
=
50µA
1mA
C
7
-
-
-
V
E
=
50µA
I
CBO
-
10
10
1
µA
µA
V
V
V
CB
=
400V
Emitter cutoff current
I
EBO
-
-
EB
=5V
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat)
-
-
I
C/I
B
=
5A/1A
5A/1A
∗
∗
V
BE(sat)
-
-
1.5
50
-
V
I
C/I
B
=
hFE
25
-
-
-
DC current transfer ratio
Transition frequency
Output capacitance
Turn-on time
V
V
V
CE/I
C
=
5V/2A
E
f
T
15
80
-
MHz
pF
µs
µs
µs
CB
=
=
10V, I
10V, I
=-0.5A, f
=5MHz
∗
Cob
ton
tstg
tf
-
-
CB
E
=
0A, f=1MHz
-
1
I
I
C
=
4A , R
B1=- 0.4A
CC 200V
L=50Ω
Storage time
-
-
2.5
1
IB2=
Fall time
-
-
V
Measured using pulse current.
∗
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