2SC5606(NE66219) [ETC]

Discrete ; 分离\n

2SC5606(NE66219)


型号：	2SC5606(NE66219)
厂家：	ETC
描述：	Discrete 分离\n
文件：	总16页 (文件大小：68K)
下载：	下载PDF数据表文档文件

2SC5606_1

NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)

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16 NEC

2SC5606-A

NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)

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19 NEC

2SC5606-A

NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION

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4 RENESAS

2SC5606-A-YFB

RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, LEAD FREE, ULTRA SUPER MINIMOLD, 19, 1608, 3 PIN

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0 NEC

2SC5606-FB

RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SUPER MINIMOLD PACKAGE-3

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0 NEC

2SC5606-FB-A

RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SUPER MINIMOLD PACKAGE-3

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0 NEC

2SC5606-T1

NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION

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5 RENESAS

2SC5606-T1

NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)

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18 NEC

2SC5606-T1

NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD

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31 NEC

2SC5606-T1-A

NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)

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17 NEC

2SC5606-T1-A

NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION

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24 RENESAS

2SC5606-T1FB

RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SUPER MINIMOLD PACKAGE-3

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0 NEC

2SC5606-T1-FB-A

L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, LEAD FREE, 19, 1608, ULTRA SUPER MINIMOLD PACKAGE-3

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0 RENESAS

2SC5606-T1FB-A

RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SUPER MINIMOLD PACKAGE-3

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1 NEC

2SC5606-T1YFB-A

RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, LEAD FREE, ULTRA SUPER MINIMOLD, 19, 1608, 3 PIN

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0 NEC

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