2SD1581K
更新时间：2024-09-18 02:45:20
品牌：ETC
描述：TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 2A I(C) | TO-221VAR
概述
数据手册2SD1581K 概述
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 2A I(C) | TO-221VAR
晶体管| BJT | NPN | 25V V（ BR ） CEO | 2A I（C ） | TO- 221VAR\n
2SD1581K 数据手册
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PDF下载DATA SHEET
SILICON TRANSISTOR
2SD1581
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS
PACKAGE DRAWING (UNIT: mm)
The 2SD1581 is a single type super high hFE transistor and low
collector saturation voltage and low power loss. This transistor is
ideal for use in high current drives such as mortars, relays, and
ramps.
FEATURES
•
Ultra high hFE
hFE = 800 to 3200 (@ VCE = 5.0 V, IC = 500 mA)
Low collector saturation voltage
•
VCE(sat) = 0.18 V TYP. (@ IC = 1.0 A, IB = 10 mA)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(pulse)*
PT
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Total power dissipation
Junction temperature
Storage temperature
30
25
15
V
V
2.0
A
3.0
A
1.0
W
°C
°C
Tj
150
−55 to +150
Tstg
* PW ≤ 10 ms, duty cycle ≤ 50%
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Symbol
ICBO
Conditions
VCB = 30 V, IE = 0
MIN.
TYP.
1500
MAX.
100
Unit
nA
nA
−
IEBO
VEB = 10 V, IC = 0
100
hFE1
VCE = 5.0 V, IC = 500 mA
VCE = 5.0 V, IC = 2.0 mA
VCE = 5.0 V, IC = 300 mA
IC = 1.0 A, IB = 10 mA
IC = 1.0 A, IB = 10 mA
*
*
*
*
*
800
400
600
3200
−
DC current gain
hFE2
DC base voltage
VBE
660
0.18
0.83
26
700
0.30
1.2
mV
V
Collector saturation voltage
Base saturation voltage
Output capacitance
Gain bandwidth product
VCE(sat)
VBE(sat)
Cob
V
VCB = 10 V, IE = 0, f = 1.0 MHz
35
pF
MHz
VCE = 10 V, IE = −500 mA
fT
150
350
** Pulse test PW ≤ 350 µs, duty cycle ≤ 2% per pulsed
hFE1/hFE CLASSIFICATION M : 800 to 1600 L : 1200 to 2400 K : 2000 to 3200
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16197EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
2002
©
2SD1581
TYPICAL CHARACTERISTICS (Ta = 25°C)
2
Data Sheet D16197EJ1V0DS
2SD1581
3
Data Sheet D16197EJ1V0DS
2SD1581
•
The information in this document is current as of July, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
•
•
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4
2SD1581K 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| 2SD1581L | ETC | TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 2A I(C) | TO-221VAR | 获取价格 |
|
| 2SD1581M | ETC | TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 2A I(C) | TO-221VAR | 获取价格 |
|
| 2SD1582 | NEC | Audio Frequency Power Amplifier | 获取价格 |
|
| 2SD1582-T | RENESAS | 2SD1582-T | 获取价格 |
|
| 2SD1582-T-AY | RENESAS | TRANSISTOR,BJT,NPN,50V V(BR)CEO,1A I(C),TO-221VAR | 获取价格 |
|
| 2SD1582K-AY | RENESAS | TRANSISTOR,BJT,NPN,50V V(BR)CEO,1A I(C),TO-221VAR | 获取价格 |
|
| 2SD1582K-AZ | RENESAS | TRANSISTOR,BJT,NPN,50V V(BR)CEO,1A I(C),TO-221VAR | 获取价格 |
|
| 2SD1582K-T | RENESAS | 2SD1582K-T | 获取价格 |
|
| 2SD1582K-T-AY | RENESAS | TRANSISTOR,BJT,NPN,50V V(BR)CEO,1A I(C),TO-221VAR | 获取价格 |
|
| 2SD1582K-T-AZ | RENESAS | TRANSISTOR,BJT,NPN,50V V(BR)CEO,1A I(C),TO-221VAR | 获取价格 |
|
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