2SD1857TV2P [ETC]
BJT ; BJT\n
| 型号： | 2SD1857TV2P |
| 厂家： | 
ETC |
| 描述： | BJT
|
| 文件： | 总1页 (文件大小：27K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC4132 / 2SD1857
Transistors
Power Transistor (120V, 1.5A)
2SC4132 / 2SD1857
zExternal dimensions (Units : mm)
zFeatures
1) High breakdown voltage. (BVCEO = 120V)
2) Low collector output capacitance.
(Typ. 20pF at VCB = 10V)
2SC4132
4.0
1.0
2.5
0.5
( )
1
3) High transition frequency. (fT = 80MHz)
4) Complements the 2SB1236.
(
)
2
3
(
)
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
ROHM : MPT3
EIAJ : SC-62
zAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Unit
V
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
VCBO
VCEO
VEBO
120
120
V
2SD1857
6.8
5
V
2.5
I
C
2
A
Collector current
I
CP
3
A
1
*
2
*
0.5
0.65Max.
2SC4132
2SD1857
Collector power
dissipation
P
C
2
1
W
0.5
(
1
)
( ) ( )
2 3
Junction temperature
Storage temperature
Tj
150
°C
°C
2.54 2.54
Tstg
−55~+150
1.05
0.45
1
2
Single pulse Pw = 10ms
When mounted on a 40 × 40 × 0.7mm ceramic board.
*
Taping specifications
(1) Emitter
(2) Collector
(3) Base
*
ROHM : ATV
zPackaging specifications and hFE
Type
2SC4132 2SD1857
Package
MPT3
PQR
ATV
PQR
−
hFE
Marking
Code
CB
*
T100
1000
TV2
2500
Basic ordering unit (pieces)
Denotes hFE
*
zElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
BVCBO
BVCEO
BVEBO
120
120
5
−
−
−
−
V
V
I
I
I
C
C
E
= 50µA
= 1mA
= 50µA
CB = 100V
EB = 4V
−
−
V
I
CBO
EBO
CE(sat)
FE
−
−
1
µA
µA
V
V
V
Emitter cutoff current
I
−
−
1
Collector-emitter saturation voltage
DC current transfer ratio
V
−
−
0.4
390
−
I
C
/I
CE/I
CE = 5V , I
CB = 10V , IE
B
= 1A/0.1A
= 5V/0.1A
= −0.1A , f = 30MHz
= 0A , f = 1MHz
*
*
82
−
−
−
h
V
V
V
C
Transition frequency
Output capacitance
f
T
80
20
MHz
pF
E
Cob
−
−
Measured using pulse current.
*
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