2SD2532 [ETC]
;
| 型号： | 2SD2532 |
| 厂家： | 
ETC |
| 描述： |
|
| 文件： | 总5页 (文件大小：30K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SD2532
Silicon NPN Epitaxial
Application
Low frequency power amplifier.
UPAK
Features
• Low saturation voltage.
1
2
V
≤ 0.2 V max.
CE(sat)
3
1. Base
• Large current capacitance.
2. Collector
3. Emitter
4. Collector
I
= 2 A
C
4
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
———————————————————————————————————————————
Collector to base voltage
V
50
V
CBO
———————————————————————————————————————————
Collector to emitter voltage
V
50
V
CEO
———————————————————————————————————————————
Emitter to base voltage
V
6
V
EBO
———————————————————————————————————————————
Collector current
I
2
A
C
———————————————————————————————————————————
Collector peak current
i
*
3
A
C(peak)
———————————————————————————————————————————
Collector power dissipation
P
1
W
C
———————————————————————————————————————————
Junction temperature
Tj
150
°C
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————
PW ≤ 10 ms, duty cycle ≤ 20 %
** When using the alumina ceramic board (12.5 x 20 x 0.7 mm)
*
Note:
Marking is "JS"
Attention: This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
2SD2532
Table 2 Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit Test conditions
———————————————————————————————————————————
Collector to base breakdown
V
50
—
—
V
I = 10 µA, I = 0
(BR)CBO
C E
voltage
———————————————————————————————————————————
Collector to emitter breakdown
V
50
—
—
V
I = 1 mA, R = ∞
(BR)CEO
C BE
voltage
———————————————————————————————————————————
Emitter to base breakdown
V
6
—
—
V
I = 10 µA, I = 0
(BR)EBO
E C
voltage
———————————————————————————————————————————
Collector cutoff current
I
—
—
1
µA
V
= 40 V, I = 0
CBO
CB E
———————————————————————————————————————————
Collector cutoff current
I
—
—
5
µA
V
= 40 V, R = ∞
CEO
CE BE
———————————————————————————————————————————
Emitter cutoff current
I
—
—
1
µA
V
= 5 V, I = 0
EBO
EB C
———————————————————————————————————————————
DC current transfer ratio
h
120
—
300
V
= 2 V, I = 0.5 A*
FE1
CE C
———————————————————————————————————————————
DC current transfer ratio
h
40
—
—
V
= 2 V, I = 1.5 A*
FE2
CE C
———————————————————————————————————————————
Collector to emitter saturation
V
—
0.12
0.2
V
I = 1 A, I = 50 mA*
CE(sat)
C B
voltage
———————————————————————————————————————————
Base to emitter saturation
V
—
0.85
1.2
V
I = 1 A, I = 50 mA*
BE(sat)
C B
voltage
———————————————————————————————————————————
Gain bandwidth poriduct
f
—
120
—
V
= 2 V, I = 50 mA
T
CE C
———————————————————————————————————————————
Collector output capacitance
Cob
—
20
—
V
= 10 V, I = 0
CB E
f = 1 MHz
———————————————————————————————————————————
Pulse test
*
2SD2532
Area of Safe Operation
Maximum Collector Dissipation Curve
10
2.0
1.5
1.0
0.5
i
C(peak)
3
1
I
C(max)
0.3
0.1
0.03
0.01
Ta = 25 °C
1 shot pulse
0
0.1 0.3
1
3
10
30
100
(V)
50
100
150
200
Ambient Temperature Ta (°C)
Collector to Emitter Voltage V
CE
** When using the alumina ceramic board
(12.5 x 20 x 0.7 mm)
DC Current Transfer Ratio vs.
Collector Current
Typical Output Characteristics
2.0
1.6
1.2
0.8
0.4
1000
300
75 °C
25 °C
100
6 mA
4 mA
2 mA
Ta = –25 °C
30
10
Pulse test
V
CE
= 2 V
I
= 0
B
Ta = 25 °C
0.8
0
0.4
1.2
1.6
2.0
(V)
0.005 0.01 0.03
0.1
0.3
1
3
5
Collector to Emitter Voltage V
CE
Collector Current
I
(A)
C
2SD2532
Collector Current vs.
Base to Emitter On Voltage
Saturation Voltage vs.
Collector Current
2
1
10
Pulse test
= 20 I
I
B
C
0.5
3
1
Ta = –25 °C
0.2
0.1
V
BE(sat)
Ta = –25 °C
25 °C
75 °C
75 °C
25 °C
0.05
0.3
0.1
0.02
Ta = 75 °C
0.01
0.005
V
CE(sat)
25 °C
1
0.03
0.01
Pulse test
0.002
0.001
–25 °C
V
CE
= 2 V
0
0.2
0.4
0.6
0.8
1.0
0.3
0.003 0.01 0.03
0.1
3
Base to Emitter On Voltage
(V)
Collector Current I (A)
C
V
BE(on)
Collector to Emitter Saturation Voltage
vs. Base Current
Gain Bandwidth Product vs.
Collector Current
1000
10
3
Pulse test
Ta = 25°C
300
100
1
0.3
0.1
I
= 2 A
C
1 A
0.5 A
30
10
Pulse test
0.03
0.01
V
CE
= 2 V
Ta = 25 °C
300 1000
(A)
1
3
10
30
100 300 1000
10
30
100
Collector Current
I
Base Current I (A)
C
B
2SD2532
Collector Output Capacitance vs.
Collector to Base Voltage
300
100
I
= 0
E
f = 1 MHz
30
10
3
10
Collector to Base Voltage V
1
3
30
100
(V)
CB
Package Dimensions
Unit : mm
4.5 ± 0.1
1.8 max
1.5 ± 0.1
0.44 max
4
φ
1.0
0.53 max
0.48 max
1
2
3
0.44 max
1.5
1.5
3.0
UPAK
SC–62
UPAK
Hitachi Code
EIAJ
JEDEC
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