2SD812R [ETC]

TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-220AB ; 晶体管| BJT | NPN | 80V V( BR ) CEO | 5A I(C ) | TO- 220AB\n
2SD812R
型号: 2SD812R
厂家: ETC    ETC
描述:

TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-220AB
晶体管| BJT | NPN | 80V V( BR ) CEO | 5A I(C ) | TO- 220AB\n

晶体 晶体管
文件: 总2页 (文件大小:155K)
下载:  下载PDF数据表文档文件

2SD813

SI NPN EPITAXIAL PLANAR

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28 PANASONIC

2SD813

SI NPN EPITAXIAL PLANAR

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21 PANASONIC

2SD814

Silicon NPN epitaxial planer type(For high breakdown voltage low-frequency and low-noise amplification)

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6 PANASONIC

2SD814

Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)

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11 PANASONIC

2SD814

SI NPN EPITAXIAL PLANAR

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12 PANASONIC

2SD814

Silicon NPN epitaxial planer type(For high breakdown voltage low-frequency and low-noise amplification)

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44 PANASONIC

2SD814

Silicon NPN Epitaxial Planar Type

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10 KEXIN

2SD814

High collector-emitter voltage VCEO Low noise voltage NV

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16 TYSEMI

2SD814_15

NPN Transistors

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1 KEXIN

2SD814A

High collector-emitter voltage VCEO Low noise voltage NV

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5 TYSEMI

2SD814A

Silicon NPN Epitaxial Planar Type

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15 KEXIN

2SD814A

Silicon NPN epitaxial planer type(For high breakdown voltage low-frequency and low-noise amplification)

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16 PANASONIC

2SD814A

Silicon NPN epitaxial planer type(For high breakdown voltage low-frequency and low-noise amplification)

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21 PANASONIC

2SD814A

SI NPN EPITAXIAL PLANAR

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14 PANASONIC

2SD814A

Small Signal Bipolar Transistor, 0.05A I(C), 185V V(BR)CEO, 1-Element, NPN, Silicon, TO-236, MINI3-G1, SC-59, 3 PIN

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1 PANASONIC