2SJ277FD [ETC]

TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 15A I(D) | TO-263AB ; 晶体管| MOSFET | P沟道| 100V V( BR ) DSS | 15A I( D) | TO- 263AB\n
2SJ277FD
型号: 2SJ277FD
厂家: ETC    ETC
描述:

TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 15A I(D) | TO-263AB
晶体管| MOSFET | P沟道| 100V V( BR ) DSS | 15A I( D) | TO- 263AB\n

晶体 晶体管
文件: 总3页 (文件大小:201K)
下载:  下载PDF数据表文档文件

2SJ278

Silicon P-Channel MOS FET

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206 HITACHI

2SJ278

Silicon P Channel MOS FET

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90 RENESAS

2SJ278MY

暂无描述

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3 RENESAS

2SJ278MYTL-E

Silicon P Channel MOS FET

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47 RENESAS

2SJ278MYTR

Power Field-Effect Transistor, 1A I(D), 60V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

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0 HITACHI

2SJ278MYTR

1A, 60V, 1.2ohm, P-CHANNEL, Si, POWER, MOSFET

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1 RENESAS

2SJ278MYTR

Power Field-Effect Transistor, 1A I(D), 60V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

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1 HITACHI

2SJ278MYTR-E

Silicon P Channel MOS FET

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51 RENESAS

2SJ278MYUL

1A, 60V, 1.2ohm, P-CHANNEL, Si, POWER, MOSFET

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0 HITACHI

2SJ278MYUR

Power Field-Effect Transistor, 1A I(D), 60V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

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0 HITACHI

2SJ278MYUR

1A, 60V, 1.2ohm, P-CHANNEL, Si, POWER, MOSFET

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0 RENESAS

2SJ278MYUR

Power Field-Effect Transistor, 1A I(D), 60V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

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0 HITACHI

2SJ278TR

Small Signal Field-Effect Transistor, 1A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, UPAK-3

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0 HITACHI

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81 ETC

2SJ279(L)

TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 5A I(D) | TO-251AA

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43 ETC