2SJ443 [ETC]
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 10A I(D) | TO-220FN ; 晶体管| MOSFET | P沟道| 60V V（ BR ） DSS | 10A I（ D） | TO- 220FN\n
| 型号： | 2SJ443 |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 10A I(D) | TO-220FN
|
| 文件： | 总4页 (文件大小：23K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SJ443
Silicon P-Channel MOS FET
November 1996
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
4 V Gate drive can be driven from 5 V source
Suitable for Switching regulator, DC - DC converter
Outline
TO-220CFM
1
D
2
3
1. Gate
G
2. Drain
3. Source
S
2SJ443
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
VDSS
Ratings
–60
Unit
V
Drain to source voltage
Gate to source voltage
Drain current
VGSS
±20
V
ID
–10
A
1
Drain peak current
ID(pulse)
IDR
Pch*2
*
–40
A
Body to drain diode reverse drain current
Channel dissipation
–10
A
25
W
°C
°C
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
2
2SJ443
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V(BR)DSS
V(BR)GSS
IGSS
–60
—
—
V
ID = –10 mA, VGS = 0
Gate to source breakdown
voltage
±20
—
—
V
IG = ±100 µA, VDS = 0
Gate to source leak current
—
—
±10
µA
µA
V
VGS = ±16 V, VDS = 0
VDS = –50 V, VGS = 0
ID = –1 mA, VDS = –10 V
Zero gate voltage drain current IDSS
Gate to source cutoff voltage VGS(off)
—
—
–250
–2.0
0.18
–1.0
—
—
Static drain to source on state RDS(on)
resistance
0.13
Ω
ID = –5A
VGS = –10 V*1
—
0.18
6.5
0.25
—
Ω
ID = –5A
VGS = –4 V*1
Forward transfer admittance
|yfs|
4.0
S
ID = –5A
VDS = –10 V*1
Input capacitance
Ciss
—
—
—
—
—
—
—
—
900
460
130
8
—
—
—
—
—
—
—
—
pF
pF
pF
ns
ns
ns
ns
V
VDS = –10 V
VGS = 0
Output capacitance
Coss
Reverse transfer capacitance Crss
f = 1 MHz
ID = –5A
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
65
VGS = –10 V
RL =6 Ω
Turn-off delay time
Fall time
170
105
–1.1
Body to drain diode forward
voltage
VDF
IF = –10A, VGS = 0
Body to drain diode reverse
recovery time
trr
—
200
—
ns
IF = –10 A, VGS = 0,
diF/dt = 50 A/µs
Note 1. Pulse Test
See characteristic curves of 2SJ172, 2SJ175
3
2SJ443
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of this document without Hitachi’s permission.
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other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the
examples described herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third party
or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
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Semiconductor & IC Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan
Tel: Tokyo (03) 3270-2111
Fax: (03) 3270-5109
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U S A
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4
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