2SK2923 [ETC]
;
| 型号： | 2SK2923 |
| 厂家： | 
ETC |
| 描述： |
|
| 文件： | 总1页 (文件大小：26K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Power F-MOS FETs
2SK2923
Silicon N-Channel Power F-MOS FET
■ Features
● Avalanche energy capacity guaranteed
● High-speed switching
● Low ON-resistance
unit: mm
4.6±0.2
● No secondary breakdown
● Low-voltage drive
9.9±0.3
2.9±0.2
φ3.2±0.1
■ Applications
● Contactless relay
● Diving circuit for a solenoid
● Driving circuit for a motor
● Control equipment
2.6±0.1
1.2±0.15
0.7±0.1
1.45±0.15
● Switching power supply
0.75±0.1
■ Absolute Maximum Ratings (TC = 25°C)
2.54±0.2
5.08±0.4
Parameter
Symbol
Ratings
Unit
V
Drain to Source breakdown voltage VDSS
150
1
2 3
7
Gate to Source voltage
DC
Pulse
Avalanche energy capacity
VGSS
ID
±20
V
1: Gate
2: Drain
3: Source
±20
A
Drain current
IDP
±40
A
TO-220E Package
EAS*
200
mJ
Allowable power
dissipation
TC = 25°C
Ta = 25°C
50
PD
W
2
Channel temperature
Storage temperature
Tch
150
°C
°C
Tstg
−55 to +150
*
L = 1 mH, IL = 20A, 1 pulse
■ Electrical Characteristics (TC = 25°C)
Parameter
Symbol
Conditions
VDS = 120V, VGS = 0
VGS = ±20V, VDS = 0
ID = 1mA, VGS = 0
min
typ
max
Unit
µA
µA
V
Drain to Source cut-off current
Gate to Source leakage current
IDSS
10
±1
IGSS
Drain to Source breakdown voltage VDSS
150
1
Gate threshold voltage
Vth
VDS = 10V, ID = 1mA
2.5
80
V
RDS(on)1 VGS = 10V, ID = 10A
RDS(on)2 VGS = 4V, ID = 10A
60
70
17
mΩ
mΩ
S
Drain to Source ON-resistance
100
Forward transfer admittance
Diode forward voltage
| Yfs |
VDSF
VDS = 10V, ID = 10A
IDR = 20A, VGS = 0
10
−1.6
V
Input capacitance (Common Source) Ciss
Output capacitance (Common Source) Coss
Reverse transfer capacitance (Common Source) Crss
2000
510
190
15
pF
VDS = 10V, VGS = 0, f = 1MHz
pF
pF
Turn-on time (delay time)
Rise time
td(on)
tr
ns
VDD = 100V, ID = 10A
40
ns
Fall time
tf
VGS = 10V, RL = 10Ω
160
660
ns
Turn-off time (delay time)
Thermal resistance between channel and case
Thermal resistance between channel and atmosphere
td(off)
Rth(ch-c)
Rth(ch-a)
ns
2.5
°C/W
°C/W
62.5
1
相关型号：
2SK2925(S)TL
Power Field-Effect Transistor, 10A I(D), 60V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
HITACHI
©2020 ICPDF网 联系我们和版权申明