2SK2982-Z
更新时间：2024-09-18 02:45:29
品牌：ETC
描述：TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 30A I(D) | TO-252AA
概述
数据手册2SK2982-Z 概述
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 30A I(D) | TO-252AA
晶体管| MOSFET | N沟道| 30V V（ BR ） DSS | 30A I（ D） | TO- 252AA
2SK2982-Z 数据手册
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PDF下载DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2982
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2982 is N-channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES
• Low on-resistance
RDS(on)1 = 12.5 mΩ MAX. (VGS = 10 V, ID = 15 A)
RDS(on)2 = 16.5 mΩ MAX. (VGS = 4.5 V, ID = 15 A)
RDS(on)3 = 19.0 mΩ MAX. (VGS = 4.0 V, ID = 15 A)
• Low Ciss : Ciss = 2290 pF TYP.
• Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
(TO-251)
PACKAGE
TO-251
2SK2982
2SK2982-Z
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
VDSS
VGSS
ID(DC)
ID(pulse)
PT
30
V
V
(TO-252)
20
30
120
A
Drain Current (Pulse) Note
A
Total Power Dissipation (TA = 25°C)
Total Power Dissipation (TC = 25°C)
Channel Temperature
1.0
W
W
°C
°C
PT
30
Tch
150
Storage Temperature
Tstg
–55 to + 150
Note PW ≤ 10 µs, Duty cycle ≤ 1%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
Date Published May 2001 NS CP(K)
Printed in Japan
D12354EJ3V0DS00 (3rd edition)
1998
©
The mark # shows major revised points.
2SK2982
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
RDS(on)1
RDS(on)2
RDS(on)3
VGS(off)
| yfs |
IDSS
TEST CONDITIONS
VGS = 10 V, ID = 15 A
MIN. TYP. MAX. UNIT
Drain to Source On-state Resistance
9.8
13.2
15.0
1.5
12.5
16.5
19.0
2.0
mΩ
mΩ
mΩ
V
VGS = 4.5 V, ID = 15 A
VGS = 4.0 V, ID = 15 A
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 15 A
VDS = 30 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
VDS = 10 V
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Drain Leakage Current
Gate to Source Leakage Current
Input Capacitance
1.0
13
27
S
10
10
µA
µA
pF
pF
pF
ns
ns
ns
ns
IGSS
Ciss
2290
940
440
40
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Turn-on Delay Time
Crss
f = 1 MHz
Td(on)
tr
td(off)
Tf
ID = 15 A
Rise Time
VGS(on) = 10 V
427
174
226
53
Turn-off Delay Time
VDD = 15 V
Fall Time
RG = 10 Ω
Total Gate Charge
QG
ID = 30 A
nC
nC
nC
V
Gate to Source Charge
Gate to Drain Charge
Body Diode forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
QGS
VDD = 24 V
6.3
16
QGD
VGS = 10 V
VF(S-D)
Trr
IF = 30 A, VGS = 0 V
IF= 30A, VGS = 0 V
di/dt = 100A/µs
0.8
49
ns
nC
Qrr
50
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
IG
= 2 mA
RL
V
GS
R
L
90%
V
GS
VGS(on)
10%
Wave Form
0
RG
PG.
VDD
50 Ω
PG.
VDD
90%
ID
90%
10%
ID
V
0
GS
10%
I
D
0
Wave Form
tr
td(on)
td(off)
t
f
τ
ton
toff
τ = 1µs
Duty Cycle ≤ 1%
2
Data Sheet D12354EJ3V0DS
2SK2982
TYPICAL CHARACTERISTICS (TA = 25°C)
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
70
60
50
40
30
100
80
60
40
20
0
20
10
0
0
20
40
60
80 100 120 140 160
0
20 40
60
80 100 120 140 160
T
C
- Case Temperature - ˚C
TC - Case Temperature - ˚C
#
FORWARD BIAS SAFE OPERATING AREA
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
1000
100
Pulsed
200
I
D(pulse)
160
120
80
PW = 500
1 ms
Limited
=10 V)
µ
s
RDS(on)
(at V
GS
I
D(DC)
10 ms
Power Dissipation imited
100 ms
4.5 V
4.0 V
V
GS =10 V
10
1
40
0
T
C
= 25˚C
Single Pulse
DC
0.1
1
10
100
0
1.0
DS - Drain to Source Voltage - V
2.0
0.5
1.5
V
VDS -
Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
1000
100
Pulsed
T
ch = −25˚C
25˚C
125˚C
10
1
0
VDS = 10 V
0
2
6
8
4
V
GS - Gate to Source Voltage - V
3
Data Sheet D12354EJ3V0DS
2SK2982
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
100
10
Rth(ch-A) = 125 ˚C/W
Rth(ch-C) = 4.17 ˚C/W
1
0.1
0.01
Single Pulse
T
C
= 25˚C
0.001
µ
100
µ
10
1 m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
30
1000
100
10
V
DS = 10 V
Pulsed
Pulsed
T
ch = −25˚C
25˚C
20
75˚C
125˚C
ID = 15 A
10
0
1
1
0
5
10
15
10
100
1000
V
GS - Gate to Source Voltage - V
I
D- Drain Current - A
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
30
20
Pulsed
V
DS = 10 V
= 1 mA
2.0
1.5
I
D
V
GS = 4.0 V
10 V
4.5 V
1.0
0.5
10
0
0
−50
0
50
100
150
0.2
1
10
100
T
ch - Channel Temperature - ˚C
ID - Drain Current - A
4
Data Sheet D12354EJ3V0DS
2SK2982
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
10
1
20
4.5 V
10 V
VGS = 4.0 V
V
GS = 0 V
15
10
5
0.1
Pulsed
1.5
I
D
= 15 A
150
0.02
0
0
1.0
100
0.5
0
50
−50
V
SD
- Source to Drain Voltage - V
T
ch - Channel Temperature - ˚C
SWITCHING CHARACTERISTICS
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
1000
100
10000
1000
t
r
V
GS = 0 V
t
f
f = 1 MHz
t
d(off)
Ciss
t
d(on)
Coss
Crss
10
1
100
10
V
DD = 15 V
V
GS = 10 V
R
G
= 10 Ω
10
0.1
1
100
0.1
1
10
100
I
D
- Drain Current - A
VDS - Drain to Source Voltage - V
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1000
100
40
30
20
10
di/dt = 100 A/µs
GS = 0 V
I = 30 A
D
V
14
12
10
8
V
GS
V
DD = 24 V
15 V
6 V
6
10
1
4
2
0
V
DS
0
0
20
Q
40
60
80
0.1
1
10
100
I
F
- Drain Current - A
G
- Gate Charge - nC
5
Data Sheet D12354EJ3V0DS
2SK2982
PACKAGE DRAWINGS (Unit: mm)
TO-251(MP-3)
TO-252(MP-3Z)
6.5±0.2
2.3±0.2
2.3±0.2
6.5±0.2
5.0±0.2
5.0±0.2
4
0.5±0.1
0.5±0.1
4
1
2
3
1
2
3
1.1±0.2
0.9
0.8
1.1±0.2
MAX. MAX.
2.3 2.3
0.8
+0.2
0.5-0.1
+0.2
0.5-0.1
1. Gate
2.3 2.3
2. Drain
3. Source
4. Fin (Drain)
1.Gate
2.Drain
3.Source
4.Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Body
Diode
Gate
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
6
Data Sheet D12354EJ3V0DS
2SK2982
[MEMO]
7
Data Sheet D12354EJ3V0DS
2SK2982
•
The information in this document is current as of May, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
•
•
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
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systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
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"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
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(Note)
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(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4
2SK2982-Z 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| 2SK2983 | NEC | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | 获取价格 |
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| 2SK2983-S | NEC | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | 获取价格 |
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| 2SK2983-ZJ | NEC | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | 获取价格 |
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| 2SK2984 | NEC | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | 获取价格 |
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| 2SK2984 | RENESAS | 40A, 30V, 0.013ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PACKAGE-3 | 获取价格 |
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| 2SK2984-S | NEC | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | 获取价格 |
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| 2SK2984-S | RENESAS | 40A, 30V, 0.013ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, TO-262, 3 PIN | 获取价格 |
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| 2SK2984-ZJ | NEC | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | 获取价格 |
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| 2SK2984-ZJ | RENESAS | 40A, 30V, 0.013ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, 3 PIN | 获取价格 |
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| 2SK2985 | TOSHIBA | N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS) | 获取价格 |
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