2SK3651-01MR [ETC]
STD LQg MOSFET ; STD LQG MOSFET\n
| 型号： | 2SK3651-01MR |
| 厂家： | 
ETC |
| 描述： | STD LQg MOSFET
|
| 文件： | 总20页 (文件大小：317K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPECIFICATION
Device Name
Type Name
Spec. No.
Date
:
:
:
:
Power MOSFET
2SK3651-01R
MS5F5155
Feb.-01-2002
Fuji Electric Co.,Ltd.
Matsumoto Factory
NAME
APPROVED
DATE
Fuji Electric Co.,Ltd.
DRAWN
CHECKED
CHECKED
Feb.-01-'02
Feb.-01-'02
Feb.-01-'02
MS5F5155
1 / 20
H04-004-05
Revised Records
Date
Classification
enactment
Index
Content
Drawn Checked Checked
Approved
Oct.-04
2001
Fuji Electric Co.,Ltd.
MS5F5155
2 / 20
H04-004-03
This specifies Fuji Power MOSFET 2SK3651-01R
N-Channel enhancement mode power MOSFET
for Switching
1.Scope
2.Construction
3.Applications
4.Outview
TO-3PF
Outview See to 8/20 page
5.Absolute Maximum Ratings at Tc=25°C (unless otherwise specified)
Description
Symbol
VDS
Characteristics
250
Unit
V
Remarks
Drain-Source Voltage
VDSX
ID
220
V
VGS=-30V
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
± 25
A
IDP
± 100
A
VGS
± 30
V
IAS
Non-repetitive Avalanche Current
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
25
A
EAS
372
mJ
L=1mH,Vcc=48V
VDS<=250V
dVDS/dt
20
kV/ s
µ
5
*1
Peak Diode Recovery dV/dt
dV/dt
kV/ s
µ
3.10
85
Ta=25°C
Tc=25°C
PD
Maximum Power Dissipation
W
Tch
Tstg
Operating and Storage
Temperature range
150
-55 to +150
C
C
°
°
t=60sec
f=60Hz
VISO
2
Isolation Voltage
kVrms
*1 I -I ,-di/dt=50A/ s,Vcc BV ,Tch 150 C
≤
µ
≤
≤
°
F
D
DSS
6.Electrical Characteristics at Tc=25°C (unless otherwise specified)
Static Ratings
Description
Drain-Source
Symbol
Conditions
I =250 A
min.
250
typ.
-
max.
-
Unit
µ
D
BV
VGS=0V
Breakdown Voltage
Gate Threshold
Voltage
V
V
DSS
I =250 A
µ
D
V (th)
GS
VDS=VGS
3.0
-
-
-
5.0
25
VDS=250V
VGS=0V
VDS=200V
VGS=0V
Zero Gate Voltage
Drain Current
T =25 C
°
ch
A
µ
I
T =125 C
ch
°
-
-
250
DSS
VGS= ± 30V
Gate-Source
I
VDS=0V
Leakage Current
Drain-Source
-
-
10
75
100
100
nA
GSS
ID=12.5A
R (on) VGS=10V
On-State Resistance
m
Ω
DS
Fuji Electric Co.,Ltd.
MS5F5155
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H04-004-03
Dynamic Ratings
Description
Symbol
Conditions
ID=12.5A
min.
typ.
max.
Unit
S
Forward
g
VDS=25V
VDS=75V
VGS=0V
f=1MHz
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
8
-
16
2000
400
25
-
fs
Ciss
3000
600
38
Coss
-
pF
Capacitance Crss
td(on)
-
-
-
-
-
-
-
-
Vcc=72V
VGS=10V
ID=12.5A
20
30
60
20
44
14
16
30
45
90
30
66
21
24
Turn-On Time
tr
td(off)
tf
ns
R =10
Turn-Off Time
Ω
GS
QG
Vcc=72V
ID=12A
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
QGS
QGD
nC
VGS=10V
Reverse Diode
Description
Symbol
IAV
Conditions
L=100 H Tch=25 C
min.
typ.
-
max.
Unit
A
Avalanche Capability
µ
°
See Fig.1 and Fig.2
IF=25A
25
-
-
Diode Forward
On-Voltage
V
SD
VGS=0V
IF=25A
VGS=0V
T =25 C
°
1.10
0.45
1.5
1.65
V
ch
Reverse Recovery
Time trr
Reverse Recovery
Charge Qrr
-
-
-
s
µ
-di/dt=100A/ s
µ
T =25 C
°
-
C
µ
ch
7.Thermal Resistance
Description
Symbol
min.
typ.
max.
1.471
40
Unit
C/W
Channel to Case
Channel to Ambient
Rth(ch-c)
Rth(ch-a)
°
C/W
°
Fuji Electric Co.,Ltd.
MS5F5155
4 / 20
H04-004-03
Fig.1 Test circuit
L
50Ω
D.U.T
L=100µH
Vcc=48V
Single Pulse Test
Vcc
Fig.2 Operating waveforms
+10V
VGS
-15V
BVDSS
IDP
VDS
ID
0
Fuji Electric Co.,Ltd.
MS5F5155
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H04-004-03
8.Reliability test items
All guaranteed values are under the categories of reliability per non-assembled(only MOSFETs).
Each categories under the guaranteed reliability conform to EIAJ ED4701 B101A standards.
Test items required without fail : Test Method B-121,B-122,B-123,B-131,B-141
Humidification treatment (85±2°C,65±5%RH,168±24hr)
Heat treatment of soldering (Solder Dipping,260±5°C(265°Cmax.),10±1sec,2 times)
Test Test
Testing methods and Conditions
Reference
Standard
Sampling Acceptance
number number
No.
Items
EIAJ ED4701
1 Terminal
Strength
(Tensile)
Pull force
TO-220,TO-220F : 10N
TO-3P,TO-3PF,TO-247 : 25N
TO-3PL : 45N
A-111A
method 1
15
15
T-Pack,K-Pack : 10N
Force maintaining duration :30±5sec
Load force
2 Terminal
Strength
(Bending)
TO-220,TO-220F : 5N
TO-3P,TO-3PF,TO-247 : 10N
TO-3PL : 15N
A-111A
method 3
T-Pack,K-Pack : 5N
Number of times :2times(90deg./time)
Screwing torque value: (M3)
TO-220,TO-220F : 40±10N
TO-3P,TO-3PF,TO-247 : 50±10N
TO-3PL : 70±10N
3 Mounting
Strength
(0:1)
A-112
15
15
15
15
15
method 2
4 Vibration
frequency : 100Hz to 2kHz
Acceleration : 100m/s2
A-121
test code C
Sweeping time : 20min./1 cycle
6times for each X,Y&Z directions.
Peak amplitude: 15km/s2
Duration time : 0.5ms
5 Shock
A-122
test code D
3times for each X,Y&Z directions.
Solder temp. : 235±5°C
Immersion time : 5±0.5sec
Each terminal shall be immersed in
the solder bath within 1 to 1.5mm from
the body.
6 Solderability
A-131A
test code A
7 Resistance to
Solder temp. : 260±5°C
Soldering Heat Immersion time : 10±1sec
A-132
Number of times : 2times
Fuji Electric Co.,Ltd.
MS5F5155
6 / 20
H04-004-03
Test Test
No. Items
Testing methods and Conditions
Reference
Standard
Sampling Acceptance
number number
EIAJ ED4701
B-111A
1 High Temp.
Temperature : 150+0/-5°C
Test duration : 1000hr
Temperature : -55+5/-0°C
Test duration : 1000hr
Temperature : 85±2°C
Relative humidity : 85±5%
Test duration : 1000hr
Temperature : 85±2°C
Relative humidity : 85±5%
Bias Voltage : VDS(max) * 0.8
22
22
Storage
2 Low Temp.
Storage
B-112A
3 Temperature
Humidity
Storage
4 Temperature
Humidity
BIAS
B-121A
test code C
22
22
B-122A
test code C
Test duration : 1000hr
5 Unsaturated
Pressurized
Vapor
Temperature : 130±2°C
(0:1)
Relative humidity : 85±5%
Vapor pressure : 230kPa
Test duration : 96hr
High temp.side : 150±5°C
Low temp.side : -55±5°C
Duration time : HT 30min,LT 30min
Number of cycles : 100cycles
B-123A
22
22
22
test code C
6 Temperature
Cycle
B-131A
test code A
7 Thermal Shock Fluid : pure water(running water)
High temp.side : 100+0/-5 C
B-141A
test code A
°
Low temp.side : 0+5/-0 C
°
Duration time : HT 5min,LT 5min
Number of cycles : 100cycles
1 Intermittent
Operating
Life
Ta=25±5°C
∆Tc=90degree
D-322
22
Tch≤Tch(max.)
Test duration : 3000 cycle
Temperature : 150+0/-5°C
Bias Voltage : VGS(max)
Test duration : 1000hr
Temperature : 150+0/-5°C
2 HTRB
(Gate-source)
D-323
D-323
22
22
(0:1)
3 HTRB
(Drain-Source) Bias Voltage : VDS(max)
Test duration : 1000hr
Failure Criteria
Symbols
Failure Criteria
Unit
Item
Breakdown Voltage
Lower Limit
LSL * 0.8
-----
-----
LSL * 0.8
-----
Upper Limit
-----
BVDSS
IDSS
IGSS
VGS(th)
RDS(on)
gfs
V
A
A
V
Ω
S
V
Zero gate Voltage Drain-Source Current
Gate-Source Leakage Current
Gate Threshold Voltage
Drain-Source on-state Resistance
Forward Transconductance
Diode forward on-Voltage
Marking
USL * 2
USL * 2
USL * 1.2
USL * 1.2
-----
LSL * 0.8
-----
VSD
USL * 1.2
Soldering
-----
With eyes or Microscope
-----
and other damages
* LSL : Lower Specification Limit
* USL : Upper Specification Limit
* Before any of electrical characteristics measure, all testing related to the humidity
have conducted after drying the package surface for more than an hour at 150°C.
Fuji Electric Co.,Ltd.
MS5F5155
7 / 20
H04-004-03
FUJI POWER MOSFET
Trademark
Type name
See Note 1.
Lot No.
Pre-Solder
2
3
1
CONNECTION
1
2
3
GATE
Note 1. Guaranteed mark of avalanche ruggedness.
DRAIN
SOURCE
DIMENSIONS ARE IN MILLIMETERS.
Fuji Electric Co.,Ltd.
MS5F5155
8 / 20
H04-004-03
9 Warning
9.1. Although Fuji Electric is enhancing product quality and reliability, a small percentage of semiconductor
products may become faulty. When using Fuji Electric semiconductor products in your equipment, you
are requested to take adequate safety measures to prevent the equipment from causing a physical
injury, fire, or other problem if any of the products become faulty. It is recommended to make your
design fail-safe, flame retardant, and free of malfunction.
9.2. The products introduced in this Specification are intended for use in the following electronic and
electrical equipment witch has normal reliability requirements.
ComputersOA equipments
Measurement equipments
Electrical home appliances
Communications equipment (Terminal devices)
•
•
•
•
•
•
Machine tools
AV equipments
Industrial robots
•
Personal equipments
etc…
•
9.3. If you need to use a product in this Specification for equipment requiring higher reliability than normal,
such as for the equipment listed below, it is imperative to contact Fuji Electric to obtain prior approval.
When using these products for such equipment, take adequate measures such as a backup system to
prevent the equipment from malfunctioning even if a Fuji’s product incorporated in the equipment
becomes faulty.
Transportation equipment (Automotives, Locomotives and ships etc…)
•
Backbone network equipment
Traffic-signal control equipment
•
•
•
•
Gas alarm, Leakage gas auto breaker
Burglar alarm, Fire alarm, Emergency equipments etc…
9.4. Don’t use products in this Specification for the equipment requiring strict reliability such as
(without limitation)
Aerospace equipment
Medical equipment
Aeronautic equipment
nuclear control equipment
•
•
•
•
•
Submarine repeater equipment
10. General Notice
10.1. Preventing ESD Damage
Although the gate oxide of Fuji Power MOSFETs is much higher ruggedness to ESD damage than
small-Signal MOSFETs and CMOS ICs, careful handling of any MOS devices are an important
consideration.
1) When handling MOSFETs, hold them by the case (package) and don’t touch the leads and
terminals.
2) It is recommended that any handling of MOSFETs is done while used electrically conductive floor and
tablemats that are grounded.
3) Before touching a MOSFETs terminal, discharge any static electricity from your body and clothes by
grounding out through a high impedance resistor (about 1M )
Ω
4) When soldering, in order to protect the MOSFETs from static electricity, ground the soldering iron or
soldering bath through a low impedance resistor.
Fuji Electric Co.,Ltd.
MS5F5155
9 / 20
H04-004-03
10.2. Short mode failure / Open mode failure
The MOSFETs may be in the risk of having short mode failure or open mode failure when the applied over
voltage, over current or over temperature each specified maximum rating. It is recommended to use the
fail-safe equipment or circuit from such possible failures.
10.3. An Electric shock / A Skin burn
You may be in risk for an Electric shock or a Skin burn for directly touching to the leads or package of the
MOSFETs while turning on electricity or operating.
10.4. Smoke / Fire
Fuji MOSFETs are made of incombustibility material. However, a failure of the MOSFETs may emit
smoke or fire. Also, operating the MOSFETs near any flammable place or material may risk the
MOSFETs to emit smoke or fire due to the MOSFETs reach high temperature while operated.
10.5. Corrosion / Erosion
Avoid use or storage of the MOSFETs under the higher humidity, corrosive gases. It will lead the device
to corrode and possibly cause the device to fail.
10.6. Radiation field
Don’t use of the device under the radiation field since the device is not designed for radiation proofing.
11. Notes for Design
11.1. You must design the MOSFETs to be operated within specified maximum ratings (Voltage, Current,
Temperature etc…) which are imperative to prevent possible failure or destruction of the device.
11.2. We recommend to use the protection equipment or safety equipment such as fuse, breaker to prevent
the fire or damage in case of unexpected accident may have occurred.
11.3. You must design the MOSFETs within it’s reliability and lifetime in certain the environment or condition.
There is a risk that MOSFETs breakdown earlier than the target lifetime of the your products when
MOSFETs was used in the reliability condition excessively. Especially avoid use of the MOSFETs
under the higher humidity, corrosive gases.
11.4. We recommend to consider for the temperature rise not only for the Channel but also for the Leads if it
designed to large current operation to the MOSFETs.
11.5. We only guarantee the non-repetitive and repetitive Avalanche capability and not for the continuous
Avalanche capability which can be assumed as abnormal condition. Please note the device may be
destructed from the Avalanche over the specified maximum rating.
Fuji Electric Co.,Ltd.
MS5F5155
10 / 20
H04-004-03
12. Note on implementation
12.1. Soldering
Soldering involves temperatures witch exceed the device storage temperature rating. To avoid device
damage and to ensure reliability, the following guidelines from the quality assurance standard must be
observed.
1) Solder temperature and duration (Through-Hole Package)
Solder temperature
Duration
260 5 C
10 1 seconds
± °
±
350 10 C
3.5 0.5 seconds
±
°
±
2) The device should not be soldered closer than 1mm from the package. (* through-hole package)
3) When flow soldered, care must be taken to Avoid immersing the package in the solder-bath.
12.2. Please see to the following the Torque reference when mounting the device to heat sink. Excess
torque applied to the mounting screw causes damage to the device and weak torque will increase the
thermal resistance. Both of these conditions may lead the device to be destructed.
Table 1 : Recommended tightening torques.
Recommended tightening
Package style
Screw
M3
torques
TO-220
TO-220F
TO-3P
30 – 50 Ncm
M3
M3
40 – 60 Ncm
60 –80 Ncm
TO-3PF
TO-247
TO-3PL
12.3. If the heat sink with coarse finish is used, increase in thermal resistance and concentrated force to a
point may cause the MOSFETs to be destructed. We recommend in such condition to process the
surface of heat sink within 50 m and use of thermal compound to optimize its efficiency of heat
±
µ
radiation. Moreover, it is important to evenly apply the compound and eliminate any air voids. A simple
method is to apply a dot of compound of the appropriate quantity to the center of the case just below
the chip mount.
Fuji Electric Co.,Ltd.
MS5F5155
11 / 20
H04-004-03
13.Notes for Storage
13.1. The MOSFETs should be stored at a standard temperature of 5 to 35 C and humidity of 45 to
°
75%RH. If the storage area is very dry, a humidifier may be required. In such a case, use only
deionized water or boiled water, since the chlorine in tap water may corrode the leads.
13.2. Avoid exposure to corrosive gases and dust.
13.3. Rapid temperature changes may cause condensation on the MOSFETs surface. Therefore, store
the MOSFETs in a place with few temperature changes.
13.4. While in storage, it is important that nothing be loaded on top of the MOSFETs, since this may
cause excessive external force on the case.
13.5. Store MOSFETs with unprocessed lead terminals. Rust may cause presoldered connections to go
bad during later processing.
13.6. Use only antistatic containers or shipping bag for storing MOSFETs.
14. Additional points
If you have any question about any portion in this Specification, ask Fuji Electric or its sales agents before
using the product. Neither Fuji nor its agents shall be liable for any injury caused bay any use of the
products not in accordance with instructions set forth herein.
Fuji Electric Co.,Ltd.
MS5F5155
12 / 20
H04-004-03
Allowable Power Dissipation
PD=f(Tc)
120
100
80
60
40
20
0
0
25
50
75
100
125
150
Tc [°C]
Typical Output Characteristics
ID=f(VDS):80µs pulse test,Tch=25°C
100
80
60
40
20
0
20V
10V
8V
7.5V
7.0V
6.5V
6.0V
VGS=5.5V
10 12
0
2
4
6
8
VDS [V]
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Typical Transfer Characteristic
ID=f(VGS):80µs pulse test,VDS=25V,Tch=2°5C
100
10
1
0.1
0
1
2
3
4
5
6
7
8
9
10
VGS[V]
Typical Transconductance
gfs=f(ID):80µs pulse test,VDS=25V,Tch=2°5C
100
10
1
0.1
0.1
1
10
100
ID [A]
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H04-004-03
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 µs pulse test,Tch=25°C
0.25
0.20
0.15
0.10
0.05
0.00
VGS=
5.5V
6.0V
6.5V
7.0V
7.5V
8V
10V
20V
0
20
40
60
80
100
ID [A]
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=12.5A,VGS=10V
270
240
210
180
150
120
90
max.
typ.
60
30
0
-50
-25
0
25
50
75
100
125
150
Tch [°C]
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MS5F5155
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Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=1mA
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
max.
min.
-50
-25
0
25
50
75
100
125
150
Tch [°C]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=25A,Tch=25°C
14
12
10
8
Vcc= 36V
72V
96V
6
4
2
0
0
10
20
30
40
50
60
Qg [nC]
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Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
101
100
Ciss
Coss
10-1
Crss
10-2
10-1
100
101
102
VDS [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80µs pulse test,Tch=25°C
100
10
1
0.1
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
VSD [V]
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Typical Switching Characteristics vs. ID
t=f(ID):Vcc=72V,VGS=10V,RG=10 Ω
103
102
101
100
tf
td(off)
tr
td(on)
10-1
100
101
102
ID [A]
Maximum Avalanche Current vs. starting Tch
I(AV)=f(starting Tch):Vcc=48V
30
25
20
15
10
5
0
0
25
50
75
100
125
150
starting Tch [°C]
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Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=48V,I(AV)<=25A
500
400
300
200
100
0
0
25
50
75
100
125
150
starting Tch [°C]
Maximum Avalanche Current Pulsewidth
IAV=f(tAV):starting Tch=25°C,Vcc=48V
102
101
100
10-1
10-2
Single Pulse
10-8
10-7
10-6
10-5
10-4
10-3
10-2
tAV [sec]
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Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
101
100
10-1
10-2
10-3
10-6
10-5
10-4
10-3
10-2
10-1
100
t [sec]
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MS5F5155
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H04-004-03
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