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MSYSTEM
DSC6372HI1HA-T
Ultra-Small, Ultra-Low Power MEMS Oscillator with Spread Spectrum
MICROCHIP
MSYSTEM
MSYSTEM
DSC6301JI2CA-T
Ultra-Small, Ultra-Low Power MEMS Oscillator with Spread Spectrum
MICROCHIP
MSYSTEM
MSYSTEM
0923181407_V01
Picoflex PF-50 IDT-to-Board-in Z-Style, 14 Circuits, 0.07m Length
MOLEX
MSYSTEM
WALSIN
MSYSTEM
MSYSTEM
DSC6312HI2IA-T
Ultra-Small, Ultra-Low Power MEMS Oscillator with Spread Spectrum
MICROCHIP
MSYSTEM
FRT-H1-P/Q
Space-saving Plug-in Signal Conditioners F-UNIT
MSYSTEM
MSYSTEM
DSC6312JI2EA-T
Ultra-Small, Ultra-Low Power MEMS Oscillator with Spread Spectrum
MICROCHIP
DSC6311CE1IA-T
Ultra-Small, Ultra-Low Power MEMS Oscillator with Spread Spectrum
MICROCHIP
DSC6302ME1LA-T
Ultra-Small, Ultra-Low Power MEMS Oscillator with Spread Spectrum
MICROCHIP
MSYSTEM
ISP14EP15LM
SOT-223 封装型 100 V OptiMOS™ P 沟道 MOSFET 是面向电池管理、负载开关和反极性保护应用的全新技术。P 沟道器件的主要优势在于降低中低功率应用的设计复杂度。此类产品可轻松连接 MCU，开关速度快且雪崩能力强，尤其适合质量要求高的应用。器件支持逻辑电平，具备较宽的 RDS(on) 范围和低 Qg，低负载下效率较高。
INFINEON
MSYSTEM
MSYSTEM
MSYSTEM
DSC6302HI1CA-T
Ultra-Small, Ultra-Low Power MEMS Oscillator with Spread Spectrum
MICROCHIP
MURATA
MSYSTEM
10DAW
10W - Dual/Single Output - 2:1 Wide Input - Isolated & Regulated
GAPTEC
MSYSTEM
MSYSTEM
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KYOCERA AVX
AMPHENOL
SAMTEC
WALSIN
VISHAY
MSYSTEM
GLENAIR
ITT
MICROSEMI
YAGEO
ECLIPTEK
ABRACON
MOLEX
VICOR
KEMET
MTRONPTI
TI
PANASONIC
CTS
SCHURTER
KNOWLES
MURATA
TE
TOREX
SILICON
BOURNS
GOLLEDGE
STMICROELECTRONICS
RCD
BEL
NXP
MICROCHIP
TDK
KOA
INFINEON
FOXCONN
EUROQUARTZ
MAXIM
LITTELFUSE
VCC
RENESAS
CDE
IDT
AVAGO
HONEYWELL
ONSEMI
FH
NICHICON
APITECH
ROHM
EPCOS
AGILENT
GRAYHILL
ADI
Carling Technologies
RICOH
