3CN00149GL [ETC]

Optoelectronic ; 光电\n


型号：	3CN00149GL
厂家：	ETC
描述：	Optoelectronic 光电\n 光电
文件：	总2页 (文件大小：63K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Alca te l 1916 LMM

12800 p s/ n m WDM 2.5 Gb it/ s d ig ita l La se r Mod ule

with in te g ra te d e le ctro-a b sorp tion Mod ula tor

•

Wavelength selection according to ITU-T G.692

Industry-standard 14-pin butterfly package

High frequency butterfly package with

50 Ω RF impedance

Low drive voltage (≤ 2 Vpp)

InGaAsP monolithically integrated DFB laser and

modulator chip

De scrip tion

This Alcatel 1916 LMM contains an Alcatel

DFB laser with monolithically integrated

electro-absorption modulator (ILM). This

chip provides much lower dispersion

penalties than a directly modulated DFB,

without the complexity of LiNbO3 external

modulators. The Alcatel 1916 LMM is

optimized for ultra long-haul transmission

systems using non-dispersion shifted and

optical fiber amplifiers.

•

Internal optical isolator

Ap p lica tion s

•

STM-16 and OC-48 ultra long-haul

transmission systems

Terminals for submarine transmission systems

Digital WDM CATV transmission

•

Fe a ture s

•

Very low dispersion penalty over 750 km

of fiber for 2.5 Gbit/s operation

Op tica l ch a ra cte ristics

Pa ra m e te r

Threshold current

Operating current

Sym b .

Con d ition s

Min

Typ ica l

Ma x

Un its

dBm

°C

CW, V = 0 V

bias

Iop

P_AVE

CW, V = 0 V

bias

Optical output power

Laser forward voltage

Emission wavelength

∆(emitted-target) wavelength

Laser chip temperature range for tunability

Modulator bias voltage

Modulator drive voltage

Dynamic extinction ratio

Side mode suppression

Cut off frequency

I_op, V_mod, [1]

CW, I_op, V = 0 V

bias

See table 1

λm

∆λe

Tλ

See [3]

See [1]

- 0.1

- 1

+ 0.1

bias

V_mod

DER

SMSR

S21

S11

∆s

GHz

@ I_op

- 3 dB

DC to 3 GHz

See [1], [2], [3]

RF return loss

Dispersion penalty

Tracking error

0.5

Tsubmount = 25 °C, Tcase = 65 °C

If = 100 mA, Q = 10 log [P(65 °C)/P(25 °C)]

- 0.5

0.2

Rise time / Fall time

Wavelength drift vs Tcase

Monitor diode current

Dark current

Tr/Tf

∆λ/∆Tc

I_m

See [1], [2], 10%, 90%

140

0.5

1.5

pm/°C

µA

0.2

0.5

I_op,VM = - 5 V

I_d

0.1

∆T= 45 °C, I = 100 mA, T = 65 °C, V = - 1 V

TEC current

1.3

bias

∆T= 45 °C, I = 100 mA, T = 65 °C, V = - 1 V

TEC voltage

2.5

bias

Thermistor resistance

9.5

10.5

KΩ

Notes :

All limits start of life Tcase = 25 °C, Tsubmount = 20 °C to 30 °C, Vr = - 5 V, unless otherwise stated.

[1] BER= 10^-10; 2.488 Gbit/s modulation; 2²³-1 PRBS; NZR line code; DER ≥10dB

[2] 7200 ps/nm dispersion, assuming fiber with an average dispersion of 18 ps/nm/km

[3] 12800 ps/nm dispersion, assuming fiber with an average dispersionof 18ps/nm/km

[4] Tsubmount = Tλ. Tλis chip temperature required to meet target wavelength (see table 1)

Ab solute m a xim um ra tin g s

Pa ra m e te rs

Operating case temperature

Storage temperature

Laser forward current

Laser reverse voltage

Min

-40

Ma x

150

Un it

°C

Modulator forward voltage

Modulator reverse voltage

Photodiode forward current

Photodiode reverse voltage

TEC Voltage

2.8

1.4

500

2000

TEC Current

ESD applied on modulator

ESD applied on laser [1]

Lead soldering time (at 260°C)

Packing Mounting Screw Torque

0.2

[1] Human body model Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only.

September 00

Alcatel Optronics

Me ch a n ica l d e ta ils

Customized versions

are available for

large quantities.

Performance figures contained

in this document must be

specifically confirmed in

writing by Alcatel Optronics

before they become applicable

to any particular order or

contract. Alcatel Optronics

reserves the right to make

changes to the products or

information contained herein

without notice.

Pin out

7200

ps/nm

12800

p s/ n m

Con n .

N°

De scrip tion

Thermistor

1530,33

1531,11

1531,89

1532,68

1533,46

1534,25

1535,03

1535,82

1536,61

1537,39

1538,18

1538,97

1539,76

1540,55

1541,35

1542,14

1542,93

1543,73

1544,52

1545,32

1546,11

1546,91

1547,71

1548,51

1549,31

1550,11

1550,91

1551,72

1552,52

1553,32

1554,13

1554,94

1555,74

1556,55

1557,36

1558,17

1558,98

1559,79

1560,60

FC/PC

Laser DC bias (+ )

Photodetector Anode (-)

Photodetector Cathode (+ )

TEC (+ )

TEC (-)

Case Ground

Not Connected

Laser/modulator ground

Modulator Anode/50Ω RF input

Laser/modulator ground

Not Connected

EUROPE

Route de Villejust

F-91625 NOZAY CEDEX

Tel : (+ 33) 1 64 49 49 10

Fax : (+ 33) 1 64 49 49 61

Ord e rin g in form a tion

Alcatel 1916 LMM

USA

12030 Sunrise Valley Drive

RESTON - VA 2 2091

Tel : (+ 1) 703 715 3921

Fax : (+ 1) 703 860 1183

Ap p lica tion

7200 ps/nm

12800 ps/nm

Pa rt n um b e r

3CN 00149 # #

3CN 00397 # #

# # defines the wavelength according to the

table1 on the right

50GHz spacing available on 3CN00397# #

CANADA

45, De Villebois, suite 200

Gatineau (PQ)

Canada, J8T 8J7

Tel : (+ 1) 819 243 3755

Fax : (+ 1) 819 243 3354

Sta n d a rd s

ITU-T G.652 optical fiber

IEC 68-2 and MIL STD 883 environment

JAPAN

Yebisu Garden Place Tower

PO Box 5024

LASER RADIATION

AVOID EXPOSURE TO BEAM

Cla ss 3 B la se r p rod uct

20-3, Ebisu 4 - Chome

Shibuya - ku TOKYO 150 - 6028

Tel : (+ 81) 3 5424 85 65

Fax : (+ 81) 3 5424 85 81

ATTENTION

O BSERVE

Table 1, All wavelengths referenced to vacuum

Tsubmount.

PRECAUTIO NS FO R

HANDLING

ELECTRO STATIC

DISCHARGE

SENSITIVE DEVICES

3CN00149GL [ETC]

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