56A19 [ETC]
Photodiodes ; 光电二极管\n
| 型号： | 56A19 |
| 厂家： | 
ETC |
| 描述： | Photodiodes
|
| 文件： | 总3页 (文件大小：40K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
T-1 3/4 PACKAGE
PIN PHOTODIODE
MID-56A19
Description
Package Dimensions
The MID-56A19 is a photodiode mounted in
special dark end look plastic package and
suitable for the IRED 940nm type.
Unit: mm ( inches )
ψ5.05
(.200)
5.47
(.215)
7.62
(.300)
5.90
(.230)
1.00
(.040)
FLAT DENOTES CATHOD
23.40 MIN.
(.920)
.50 TYP.
(.020)
Features
l High photo sensitivity
l Low junction capacitance
l High cut-off frequency
l Fast switching time
l Acceptance viwe angle : 60°
1.00MIN.
(.040)
2.54
(.100)
C
A
Notes :
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.0 mm (.040") max.
3. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
@ TA=25oC
Parameter
Power Dissipation
Maximum Rating
150
Unit
mW
-55oC to +100oC
-55oC to +100oC
260oC for 5 seconds
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
Unity Opto Technology Co., Ltd.
02/04/2002
MID-56A19
Optical-Electrical Characteristics
@ TA=25oC
Parameter
Test Conditions
Symbol
V(BR)R
Min.
30
Type .
Max.
30
Unit
V
IR=100mA
Ee=0
Reverse Break Down Voltage
VR=10V
Ee=0
ID
Reverse Dark Current
nA
mV
nsec
mA
VOC
Open Circuit Voltage
350
l =940nm
Ee=0.1mW/cm2
VR =10V,l =940nm
RL=50W
Rise Time
Tr
Tf
IL
30
30
12
Fall Time
VR =5V , l =940nm
Light Current
Ee=0.1mW/cm2
VR =3V , f=1MHZ
CT
Total Capacitance
25
pF
Ee=0
Typical Optical-Electrical Characteristic Curves
4000
100
80
3000
2000
1000
0
60
40
20
0
0.01
0.1
1
10
100
0
5
10
15
20
Reverse Volatage - VR
Reverse Voltage- VR
FIG.1 DARK CURRENT VS REVERSE VOLTAGE
TA=25oC, Ee=0 mW/cm2
FIG.2 CAPACITANCE VS. REVERSE VOLTAGE
F=1MHZ, Ee=0mW/cm2
200
150
100
50
1000.0
100.0
10.0
1.0
0
0.1
0
20 40 60 80 100
Ambient Temperature -oC
0
20
40
60
80 100
Ambient Temperature-oC
FIG.3 TOTAL POWER DISSIPATION
VS. AMBIENT TEMPERATURE
FIG.4 DARK CURRENT VS AMBIENT
TEMPERATURE
VR=10, Ee=0 mw/cm2
Unity Opto Technology Co., Ltd.
02/04/2002
MID-56A19
Typical Optical-Electrical Characteristic Curves
100
1000
80
60
40
20
0
ꢀ100
10
1
0.1
0.01
0.1
1
10
700
850 1000 1150 1300
Wavelength-nm
Irradiance Ee (mW/cm2)
FIG.6 PHOTOCURRENT VS.
IRRADIANCE = 940 nm
FIG.5 RELATIVE SPECTRAL SENSITIVITY
VS. WAVELENGTH
0° 10° 20°
30°
40°
1.0
0.9
50
60
70
0.8
80°
90
0.5 0.3 0.1 0.2 0.4 0.6
FIG .7 SENSITIVITY DIAGRAM
Unity Opto Technology Co., Ltd.
02/04/2002
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