5962R9961801TEC [ETC]
Analog Switch ; 模拟开关\n
| 型号： | 5962R9961801TEC |
| 厂家： | 
ETC |
| 描述： | Analog Switch
|
| 文件： | 总22页 (文件大小：130K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
REVISIONS
LTR
A
DESCRIPTION
DATE (YR-MO-DA)
01-05-11
APPROVED
R. MONNIN
Change to the delta limit in table IIB for the input leakage current. Update
boilerplate. -rrp
REV
SHEET
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REV STATUS
OF SHEETS
PMIC N/A
REV
A
2
A
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4
A
5
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6
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7
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8
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9
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SHEET
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PREPARED BY
Rajesh Pithadia
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216
CHECKED BY
Rajesh Pithadia
STANDARD
MICROCIRCUIT
DRAWING
http://www.dscc.dla.mil
APPROVED BY
Raymond Monnin
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
MICROCIRCUIT, LINEAR, RADIATION
HARDENED, CMOS, HIGH SPEED QUAD SPST
ANALOG SWITCH, MONOLITHIC SILICON
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
DRAWING APPROVAL DATE
00-05-25
AMSC N/A
REVISION LEVEL
A
SIZE
A
CAGE CODE
5962-99618
67268
SHEET
1
OF
21
DSCC FORM 2233
APR 97
5962-E386-01
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
1. SCOPE
1.1 Scope. This drawing documents three product assurance class levels consisting of high reliability (device classes Q and
M), space application (device class V) and for appropriate satellite and similar applications (device class T). A choice of case
outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of
Radiation Hardness Assurance (RHA) levels are reflected in the PIN. For device class T, the user is encouraged to review the
manufacturer’s Quality Management (QM) plan as part of their evaluation of these parts and their acceptability in the intended
application.
1.2 PIN. The PIN is as shown in the following example:
5962
F
99618
01
V
E
C
Federal
stock class
designator
\
RHA
designator
(see 1.2.1)
Device
type
(see 1.2.2)
Device
class
designator
(see 1.2.3)
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
/
\/
Drawing number
1.2.1 RHA designator. Device classes Q, T and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and
are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A
specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
01
Generic number
HS-201HSRH
Circuit function
Radiation hardened, DI, high speed quad SPST
CMOS analog switch
1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as
follows:
Device class
M
Device requirements documentation
Vendor self-certification to the requirements for MIL-STD-883 compliant, non-
JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A
Q, V
T
Certification and qualification to MIL-PRF-38535
Certification and qualification to MIL-PRF-38535 with performance as specified
in the device manufacturers approved quality management plan.
1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter
Descriptive designator
Terminals
Package style
E
X
CDIP2-T16
CDFP4-F16
16
16
Dual-in-line
Flat pack
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q, T and V or MIL-PRF-38535,
appendix A for device class M.
SIZE
STANDARD
5962-99618
A
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
A
SHEET
2
DSCC FORM 2234
APR 97
1.3 Absolute maximum ratings. 1/ 2/
Positive supply voltage (V+ to ground) ..................................................................... +18 V
Negative supply voltage (V- to ground) .................................................................... -18 V
Digital input voltage (VIN) .......................................................................................... V- (-4 V) to V+ (+4 V) or
20 mA, whichever comes first
Analog input voltage, one switch (VS) ....................................................................... V- (-2 V) to V+ (+2 V) or
20 mA whichever comes first
Maximum power dissipation (PD) .............................................................................. 750 mW
Maximum junction temperature (TJ) .......................................................................... +175 C
Lead temperature (soldering, 10 seconds) ............................................................... +275 C
Thermal resistance, junction-to-case (
)
JC
Case outlines E and X............................................................................................ 12 C/W
Thermal resistance, junction-to-ambient ( JA):
Case outline E ....................................................................................................... 80 C/W
Case outline X ....................................................................................................... 95 C/W
Storage temperature range ...................................................................................... -65 C to +150 C
Peak current, S or D (pulsed at 1 ms, 10 percent duty cycle max) ........................... 50 mA
Continuous current, any terminal (except S or D) ..................................................... 25 mA
1.4 Recommended operating conditions.
Positive supply voltage (V+) ...................................................................................... +15 V dc
Negative supply voltage (V-) ..................................................................................... -15 V dc
Minimum high level input voltage (VIH) ...................................................................... 2.4 V dc
Maximum low level input voltage (VIL) ....................................................................... 0.8 V dc
Ambient operating temperature range (TA) ............................................................... -55 C to +125 C
Ground (GND) ........................................................................................................... 0 V dc
1.5 Radiation features:
Maximum total dose available (dose rate = 50 – 300 rads(Si)/s):
Device classes M, Q, and V .................................................................................. 300 Krads (Si)
Device class T ....................................................................................................... 100 Krads (Si)
Dose rate upset (20 ns pulse) ................................................................................... Not Tested
Latch-up .................................................................................................................... None 3/
SEP effective let no upset ......................................................................................... TBD 4/
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a
part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in
the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the
solicitation.
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
2/ Unless otherwise specified, all voltages are referenced to ground.
3/ Guaranteed by process or design, not tested.
4/ Values to be specified when testing is completed.
SIZE
STANDARD
5962-99618
A
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
A
SHEET
3
DSCC FORM 2234
APR 97
STANDARDS
DEPARTMENT OF DEFENSE
MIL-STD-883
-
Test Method Standard Microcircuits.
MIL-STD-1835 - Interface Standard Electronic Component Case Outlines.
HANDBOOKS
DEPARTMENT OF DEFENSE
MIL-HDBK-103 - List of Standard Microcircuit Drawings.
MIL-HDBK-780 - Standard Microcircuit Drawings.
(Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardization
Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text
of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements for device classes Q, T and V shall be in accordance with
MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for
device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified
herein.
3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A to this document.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein for device classes Q, T and V or MIL-PRF-38535, appendix A and herein for device class M.
3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.
3.2.3 Functional diagram. The functional diagram shall be as specified on figure 2.
3.2.4 Radiation exposure circuit. The radiation exposure circuit shall be as specified on figure 4.
3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full
ambient operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical
tests for each subgroup are defined in table I.
3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be
marked as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to space
limitations, the manufacturer has the option of not marking the "5962-" on the device. For RHA product using this option, the
RHA designator shall still be marked. Marking for device classes Q, T and V shall be in accordance with MIL-PRF-38535.
Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A.
3.5.1 Certification/compliance mark. The certification mark for device classes Q, T and V shall be a "QML" or "Q" as
required in MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix
A.
SIZE
STANDARD
5962-99618
A
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
A
SHEET
4
DSCC FORM 2234
APR 97
TABLE I. Electrical performance characteristics.
Conditions 1/
-55 C < TA <+125 C
V+ = +15 V dc,
V- = -15 V dc
Group A
subgroups
Device
type
Limits 2/
Unit
Test
Symbol
unless otherwise specified
Min
Max
15
Analog signal range
ON resistance
VS
4
1
01
01
V
TA = +25 C 3/
RDS(ON)
50
VS = 10 V, ID = 1 mA
V
IN = 0.8 V
2,3
1
75
50
M,D,P,L,R,F
VS = 14 V, VD = 14 V
IN = 2.4 V
Source OFF leakage
current
IS(OFF)
1
01
nA
10
V
2, 3
100
M,D,P,L,R,F
VS = 14 V, VD = 14 V
IN = 2.4 V
1
1
10
10
Drain OFF leakage current
ID(OFF)
01
01
nA
nA
V
2, 3
100
M,D,P,L,R,F
VD = VS = 14 V,
IN = 0.8 V
1
1
10
10
Channel ON leakage
current
ID(ON)
V
2, 3
100
M,D,P,L,R,F
1
10
Input leakage current (low)
Input leakage current (high)
Positive supply current
Negative supply current
Input threshold (low)
IIL
VIN under test = 0.8 V
All other VIN = 4.0 V
1,2,3
01
01
01
01
01
01
500
A
A
M,D,P,L,R,F
1
500
40
IIH
VIN under test = 4.0 V
All other VIN = 0.8 V
1,2,3
M,D,P,L,R,F
1
40
12
I+
VIN = 2.4 V or VIN = 0.8 V
for all switches
M,D,P,L,R,F
1,2,3
mA
mA
V
1
12
12
I-
VIN = 2.4 V or VIN = 0.8 V
for all switches
M,D,P,L,R,F
1,2,3
1
12
VAL
VS = -10 V input,
VD = 1 mA load
M,D,P,L,R,F
1,2,3
0.8
1
0.8
Input threshold (high)
VAH
VS = -10 V input,
VD = 1 mA load
M,D,P,L,R,F
1,2,3
2.4
2.4
V
1
See footnotes at end of table.
SIZE
STANDARD
5962-99618
A
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
A
SHEET
5
DSCC FORM 2234
APR 97
TABLE I. Electrical performance characteristics - Continued.
Conditions 1/
-55 C < TA <+125 C
V+ = +15 V dc,
V- = -15 V dc
Group A
subgroups
Device
type
Limits 2/
Unit
Test
Symbol
unless otherwise specified
Min
Max
Switch on time
tON
9
01
01
01
110
ns
RL = 1 k , CL = 35 pF,
VS = 10 V, VIH = +3 V,
VIL = 0 V, See figure 3
10,11
130
M,D,P,L,R,F
9
9
130
80
Switch off time
tOFF
ns
RL = 1 k , CL = 35 pF,
VS = 10 V, VIH = +3 V,
VIL = 0 V, See figure 3
10,11
110
M,D,P,L,R,F
9
1
80
Power Off (V+ tied to V-)
Leakage current into the
source terminal of an off
switch with overvoltage
applied.
IS(OFF)
over-
voltage
-1.0
-5.0
1.0
VS = 17 V, VD = 0 V
A
Unused inputs tied to
Ground
2,3
5.0
M,D,P,L,R,F
1
1
-5.0
-1.0
5.0
1.0
Power Off (V+ tied to V-)
Leakage current into the
drain terminal of an off
switch with overvoltage
applied.
ID(OFF)
over-
voltage
01
VD = 17 V, VD = 0 V
A
Unused inputs tied to
Ground
2,3
1
-5.0
-5.0
5.0
5.0
M,D,P,L,R,F
1/ Devices supplied to this drawing meet all levels M, D, P, L, R, and F for device classes M, Q, & V and levels M, D, P, L, R for
device class T. However, device classes M, Q, & V is only tested at the “F” level and device class T is only tested at the “R”
level (see 1.5 herein). Pre and Post irradiation values are identical unless otherwise specified in table I. When performing
post irradiation electrical measurements for any RHA level, TA = +25 C (see 1.5 herein).
2/ The limiting terms “min” (minimum) and “max” (maximum) shall be considered to apply to magnitudes only. Negative current
shall be defined as conventional current flow out of a device terminal.
3/ These parameters may not be tested, but shall be guaranteed to the limits specified in table I herein.
SIZE
STANDARD
5962-99618
A
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
A
SHEET
6
DSCC FORM 2234
APR 97
3.6 Certificate of compliance. For device classes Q, T and V, a certificate of compliance shall be required from a QML-
38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a
certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-
HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of
supply for this drawing shall affirm that the manufacturer's product meets, for device classes Q, T and V, the requirements of
MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein.
3.7 Certificate of conformance. A certificate of conformance as required for device classes Q, T and V in MIL-PRF-38535 or
for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing.
3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2
herein) involving devices acquired to this drawing is required for any change as defined in MIL-PRF-38535, appendix A.
3.9 Verification and review for device class M. For device class M, DSCC, DSCC's agent, and the acquiring activity retain
the option to review the manufacturer's facility and applicable required documentation. Offshore documentation shall be made
available onshore at the option of the reviewer.
3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in
microcircuit group number 82 (see MIL-PRF-38535, appendix A).
4. QUALITY ASSURANCE PROVISIONS
4.1 Sampling and inspection. For device classes Q, and V, sampling and inspection procedures shall be in accordance with
MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan, including screening (4.2),
qualification (4.3), and conformance inspection (4.4). The modification in the QM plan shall not affect the form, fit, or function
as described herein. For device class T, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 and
the device manufacturer’s QM plan including screening, qualification, and conformance inspection. The performance envelope
and reliability information shall be as specified in the manufacturer’s QM plan. For device class M, sampling and inspection
procedures shall be in accordance with MIL-PRF-38535, appendix A.
4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted
on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in
accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection.
For device class T, screening shall be in accordance with the device manufacturer’s Quality Management (QM) plan, and shall
be conducted on all devices prior to qualification and technology conformance inspection.
4.2.1 Additional criteria for device class M.
a. Burn-in test, method 1015 of MIL-STD-883.
(1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision
level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
test method 1015.
(2) TA = +125 C, minimum.
b. Interim and final electrical test parameters shall be as specified in table IIA herein.
SIZE
STANDARD
5962-99618
A
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
A
SHEET
7
DSCC FORM 2234
APR 97
Device type
01
Case outlines
E and X
Terminal number
Terminal symbol
1
2
IN1
D1
3
S1
4
V-
5
6
GND
S4
7
D4
8
9
IN4
IN3
D3
10
11
12
13
14
15
16
S3
NC
V+
S2
D2
IN2
NOTES:
1. NC = No connection.
2. The source and drain are interchangeable and
have been arbitrarily established.
FIGURE 1. Terminal connections.
SIZE
STANDARD
5962-99618
A
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
A
SHEET
8
DSCC FORM 2234
APR 97
FIGURE 2. Functional diagram.
Note: Rise time and fall time are less than 20 ns.
FIGURE 3. Switching waveforms.
SIZE
STANDARD
5962-99618
A
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
A
SHEET
9
DSCC FORM 2234
APR 97
R1 = 10 k
5%
C1 = 0.1 F
D1 = 1N4002 or equivalent
V1 = +15 V
V2 = -15 V
FIGURE 4. Radiation exposure circuit.
SIZE
STANDARD
5962-99618
A
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
A
SHEET
10
DSCC FORM 2234
APR 97
4.2.2 Additional criteria for device classes Q, T and V.
a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the
device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under
document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test
method 1015 of MIL-STD-883.
b. For device classes Q, T and V interim and final electrical test parameters shall be as specified in table IIA herein.
c. Additional screening for device class V beyond the requirements of device class Q shall be as specified in
MIL-PRF-38535, appendix B or as modified in the device manufacturer’s Quality Management (QM) plan.
4.3 Qualification inspection for device classes Q, T and V. Qualification inspection for device classes Q and V shall be in
accordance with MIL-PRF-38535. Qualification inspection for device class T shall be in accordance with the device
manufacturer’s Quality Management (QM) plan. Inspections to be performed shall be those specified in MIL-PRF-38535 and
herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).
4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with
MIL-PRF-38535, or as specified in the QM plan, including groups A, B, C, D, and E inspections and as specified herein. Quality
conformance inspection for device class M shall be in accordance with MIL-PRF-38535, appendix A and as specified herein.
Inspections to be performed for device class M shall be those specified in method 5005 of MIL-STD-883 and herein for groups
A, B, C, D, and E inspections (see 4.4.1 through 4.4.4). Technology conformance inspection for class T shall be in accordance
with the device manufacturer’s Quality Management (QM) plan.
4.4.1 Group A inspection.
a. Tests shall be as specified in table IIA herein.
b. Subgroups 5, 6, 7, and 8 in table I, method 5005 of MIL-STD-883 shall be omitted.
4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883:
a. Test condition A, B, C or D. The test circuit shall be maintained by the manufacturer under document revision level
control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify
the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method
1005 of MIL-STD-883.
b. TA = +125 C, minimum.
c. Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883.
4.4.2.2 Additional criteria for device classes Q, T and V. The steady-state life test duration, test condition and test
temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-
38535. The test circuit shall be maintained under document revision level control by the device manufacturer's TRB in
accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test
circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
test method 1005 of MIL-STD-883.
SIZE
STANDARD
5962-99618
A
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
A
SHEET
11
DSCC FORM 2234
APR 97
TABLE IIA. Electrical test requirements.
Subgroups
Test requirements
Subgroups
(in accordance with
(in accordance with
MIL-STD-883,
MIL-PRF-38535, table III)
method 5005, table I)
Device
class M
1
Device
class Q
1
Device
class V
Device
class T
1
Interim electrical
parameters (see 4.2)
Final electrical
As specified
in QM plan
1,2,3,9,10,11 1/
1,2,3,9, 1/
10,11
1,2,3,9, 2/ 3/
10,11
As specified
in QM plan
parameters (see 4.2)
1, 2, 3, 4, 9,
10, 11
1, 2, 3, 4, 9,
10, 11
1, 2, 3, 4, 9,
10, 11
Group A test
requirements (see 4.4)
As specified
in QM plan
1,2,3
1,2,3
1,2,3 3/
Group C end-point electrical
parameters (see 4.4)
As specified
in QM plan
1
1
1
Group D end-point electrical
parameters (see 4.4)
As specified
in QM plan
1,9
1,9
1,9
Group E end-point electrical
parameters (see 4.4)
As specified
in QM plan
1/ PDA applies to subgroup 1.
2/ PDA applies to subgroups 1, 9, and ’s.
3/ Delta limits as specified in table IIB herein shall be required where specified, and the delta
values shall be completed with reference to the zero hour electrical parameters (see table I).
TABLE IIB. Burn-in and operating life test, Delta parameters (+25 C).
Parameters
ON Resistance
Symbol
RDS(ON)
IS(OFF)
ID(OFF)
ID(ON)
IIL
Delta limits
10
Source OFF Leakage Current
Drain OFF Leakage Current
Channel ON Leakage Current
Input Leakage Current (Low)
Input Leakage Current (High)
Positive Supply Current
2 nA
2 nA
2 nA
500 nA
500 nA
2.4 mA
2.4 mA
IIH
I+
I-
Negative Supply Current
4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness
assured (see 3.5 herein). RHA levels for device classes M, Q and V shall be as specified in MIL-PRF-38535. End-point
electrical parameters shall be as specified in table IIA herein.
4.4.4.1 Group E inspection for device class T. For device class T, the RHA requirements shall be in accordance with the
class T radiation requirements of MIL-PRF-38535. End-point electrical parameters shall be as specified in table IIA herein.
4.4.4.2 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883
method 1019, condition A and as specified herein. For device class T, the total dose requirements shall be in accordance with
the class T radiation requirements of MIL-PRF-38535.
SIZE
STANDARD
5962-99618
A
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
A
SHEET
12
DSCC FORM 2234
APR 97
4.4.4.2.2 Accelerated aging testing. Accelerated aging testing shall be performed on all devices requiring a RHA level
greater than 5k rads (Si). The post-anneal end-point electrical parameter limits shall be as specified in table I herein and shall
be the pre-irradiation end-point electrical parameter limits at 25 C 5 C. Testing shall be performed at initial qualification and
after any design or process changes which may affect the RHA response of the device.
4.4.4.3 Dose rate induced latchup testing. Dose rate induced latchup testing shall be performed in accordance with test
method 1020 of MIL-STD-883 and as specified herein (see 1.5 herein). Tests shall be performed on devices, SEC, or approved
test structures at technology qualification and after any design or process changes which may effect the RHA capability of the
process.
4.4.4.4 Dose rate upset testing. Dose rate upset testing shall be performed in accordance with test method 1023 of
MIL-STD-883 and herein (see 1.5 herein).
a. Transient dose rate upset testing shall be performed at initial qualification and after any design or process changes
which may affect the RHA performance of the devices. Test 10 devices with 0 defects unless otherwise specified.
b. Transient dose rate upset testing for class Q, T, and V devices shall be performed as specified by a TRB approved
radiation hardness assurance plan and MIL-PRF-38535.
4.4.4.5 Dose rate burnout. When required by the customer, test shall be performed on devices, SEC, or approved test
structures at technology qualifications and after any design or process changes which may effect the RHA capability of the
process. Dose rate burnout shall be performed in accordance with test method 1023 of MIL-STD-883 and as specified herein.
4.4.4.6 Single event phenomena (SEP). When specified in the purchase order or contract SEP testing shall be required on
class T and V devices (see 1.5 herein). SEP testing shall be performed on a technology process on the Standard Evaluation
Circuit (SEC) or alternate SEP test vehicle as approved by the qualifying activity at initial qualification and after any design or
process changes which may affect the upset or latchup characteristics. The recommended test conditions for SEP are as
follows:
a. The ion beam angle of incidence shall be between normal to the die surface and 60 to the normal, inclusive (i.e. 0
angle 60 ). No shadowing of the ion beam due to fixturing or package related effects is allowed.
b. The fluence shall be 100 errors or 106 ions/cm2.
c. The flux shall be between 102 and 105 ions/cm2/s. The cross-section shall be verified to be flux independent by
measuring the cross-section at two flux rates which differ by at least an order of magnitude.
d. The particle range shall be 20 micron in silicon.
e. The test temperature shall be +25 C and the maximum rated operating temperature 10 C.
f. Bias conditions shall be defined by the manufacturer for the latchup measurements.
g. Test four devices with zero failures.
4.5 Methods of inspection. Methods of inspection shall be specified as follows:
4.5.1 Voltage and current. Unless otherwise specified, all voltages given are referenced to the microcircuit GND terminal.
Currents given are conventional current and positive when flowing into the referenced terminal.
5. PACKAGING
5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device
classes Q, T and V or MIL-PRF-38535, appendix A for device class M.
6. NOTES
6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications
(original equipment), design applications, and logistics purposes.
6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor
prepared specification or drawing.
SIZE
STANDARD
5962-99618
A
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
A
SHEET
13
DSCC FORM 2234
APR 97
6.1.2 Substitutability. Device class Q devices will replace device class M devices.
6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for
the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal.
6.3 Record of users. Military and industrial users should inform Defense Supply Center Columbus when a system
application requires configuration control and which SMD's are applicable to that system. DSCC will maintain a record of users
and this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering
microelectronic devices (FSC 5962) should contact DSCC-VA, telephone (614) 692-0544.
6.4 Comments. Comments on this drawing should be directed to DSCC-VA , Columbus, Ohio 43216-5000, or telephone
(614) 692-0547.
6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535 and MIL-HDBK-1331.
6.6 Sources of supply.
6.6.1 Sources of supply for device classes Q, T and V. Sources of supply for device classes Q, T and V are listed in QML-
38535. The vendors listed in QML-38535 have submitted a certificate of compliance (see 3.6 herein) to DSCC-VA and have
agreed to this drawing.
6.6.2 Approved sources of supply for device class M. Approved sources of supply for class M are listed in MIL-HDBK-103.
The vendors listed in MIL-HDBK-103 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been
submitted to and accepted by DSCC-VA.
6.7 Additional information. When applicable, a copy of the following additional data shall be maintained and available from
the device manufacturer:
a. RHA upset levels.
b. Test conditions (SEP).
c. Number of upsets (SEP).
d. Number of transients (SEP).
e. Occurrence of latchup (SEP).
SIZE
STANDARD
5962-99618
A
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
A
SHEET
14
DSCC FORM 2234
APR 97
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-99618
10. SCOPE
10.1 Scope. This appendix establishes minimum requirements for microcircuit die to be supplied under the Qualified
Manufacturers List (QML) Program. QML microcircuit die meeting the requirements of MIL-PRF-38535 and the manufacturers
approved QML plan for use in monolithic microcircuits, multichip modules (MCMs), hybrids, electronic modules, or devices
using chip and wire designs in accordance with MIL-PRF-38534 are specified herein. Two product assurance classes
consisting of military high reliability (device class Q) and space application (device Class V) are reflected in the Part or
Identification Number (PIN). When available a choice of Radiation Hardiness Assurance (RHA) levels are reflected in the PIN.
10.2 PIN. The PIN is as shown in the following example:
5962
F
99618
01
V
9
A
Federal
stock class
designator
\
RHA
designator
(see 10.2.1)
Device
type
(see 10.2.2)
Device
class
designator
(see 10.2.3)
Die
code
Die
Details
(see 10.2.4)
/
\/
Drawing number
10.2.1 RHA designator. Device classes Q and V RHA identified die shall meet the MIL-PRF-38535 specified RHA levels. A
dash (-) indicates a non-RHA die.
10.2.2 Device type(s). The device type(s) shall identify the circuit function as follows:
Device type
01
Generic number
HS-201HSRH
Circuit function
Radiation hardened, DI, high speed quad SPST
CMOS analog switch
10.2.3 Device class designator.
Device class
Device requirements documentation
Q or V
Certification and qualification to the die requirements of MIL-PRF-38535
SIZE
STANDARD
MICROCIRCUIT DRAWING
5962-99618
A
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
A
SHEET
15
DSCC FORM 2234
APR 97
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-99618
10.2.4. Die Details. The die details designation shall be a unique letter which designates the die’s physical dimensions,
bonding pad location(s) and related electrical function(s), interface materials, and other assembly related information, for each
product and variant supplied to this appendix.
10.2.4.1 Die physical dimensions.
Die type
01
Figure number
A-1
10.2.4.2. Die bonding pad locations and electrical functions.
Die type
Figure number
A-1
01
10.2.4.3. Interface materials.
Die type
Figure number
A-1
01
10.2.4.4. Assembly related information.
Die type
01
Figure number
A-1
10.3. Absolute maximum ratings. See paragraph 1.3 within the body of this drawing for details.
10.4 Recommended operating conditions. See paragraph 1.4 within the body of this drawing for details.
SIZE
STANDARD
MICROCIRCUIT DRAWING
5962-99618
A
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
A
SHEET
16
DSCC FORM 2234
APR 97
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-99618
20. APPLICABLE DOCUMENTS.
20.1 Government specifications, standards, and handbooks. Unless otherwise specified, the following specification,
standard, and handbook of the issue listed in that issue of the Department of Defense Index of Specifications and Standards
specified in the solicitation, form a part of this drawing to the extent specified herein.
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
STANDARDS
DEPARTMENT OF DEFENSE
MIL-STD-883 - Test Method Standard Microcircuits.
HANDBOOK
DEPARTMENT OF DEFENSE
MIL-HDBK-103 - List of Standard Microcircuit Drawings (SMD’s).
(Copies of the specification, standard, and handbook required by manufacturers in connection with specific acquisition
functions should be obtained from the contracting activity or as directed by the contracting activity).
20.2. Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the
text of this drawing shall take precedence.
30. REQUIREMENTS
30.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 and as specified herein or as modified in the device manufacturer’s Quality Management (QM) plan. The
modification in the QM plan shall not effect the form, fit or function as described herein.
30.2 Design, construction and physical dimensions. The design, construction and physical dimensions shall be as specified
in MIL-PRF-38535 and the manufacturer’s QM plan, for device classes Q and V and herein.
30.2.1 Die physical dimensions. The die physical dimensions shall be as specified in 10.2.4.1 and on figure A-1.
30.2.2 Die bonding pad locations and electrical functions. The die bonding pad locations and electrical functions shall be as
specified in 10.2.4.2 and on figure A-1.
30.2.3 Interface materials. The interface materials for the die shall be as specified in 10.2.4.3 and on figure A-1.
30.2.4 Assembly related information. The assembly related information shall be as specified in 10.2.4.4 and figure A-1.
30.2.5 Radiation exposure circuit. The radiation exposure circuit shall be as defined within paragraph 3.2.4. of the body of
this document.
SIZE
STANDARD
5962-99618
A
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
A
SHEET
17
DSCC FORM 2234
APR 97
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-99618
30.3 Electrical performance characteristics and post-irradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and post-irradiation parameter limits are as specified in table I of the body of this
document.
30.4 Electrical test requirements. The wafer probe test requirements shall include functional and parametric testing sufficient
to make the packaged die capable of meeting the electrical performance requirements in table I.
30.5 Marking. As a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to a
customer, shall be identified with the wafer lot number, the certification mark, the manufacturer’s identification and the PIN
listed in 10.2 herein. The certification mark shall be a “QML” or “Q” as required by MIL-PRF-38535.
30.6 Certification of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-
38535 listed manufacturer in order to supply to the requirements of this drawing (see 60.4 herein). The certificate of compliance
submitted to DSCC-VA prior to listing as an approved source of supply for this appendix shall affirm that the manufacturer’s
product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and the requirements herein.
30.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535
shall be provided with each lot of microcircuit die delivered to this drawing.
40. QUALITY ASSURANCE PROVISIONS
40.1 Sampling and inspection. For device classes Q and V, die sampling and inspection procedures shall be in accordance
with MIL-PRF-38535 or as modified in the device manufacturer’s Quality Management (QM) plan. The modifications in the QM
plan shall not effect the form, fit or function as described herein.
40.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and as defined in the
manufacturer’s QM plan. As a minimum it shall consist of:
a) Wafer lot acceptance for Class V product using the criteria defined within MIL-STD-883 test method 5007.
b) 100% wafer probe (see paragraph 30.4).
c) 100% internal visual inspection to the applicable class Q or V criteria defined within MIL-STD-883 test method 2010
or the alternate procedures allowed within MIL-STD-883 test method 5004.
40.3 Conformance inspection.
40.3.1 Group E inspection. Group E inspection is required only for parts intended to be identified as radiation assured (see
30.5 herein). RHA levels for device classes Q and V shall be as specified in MIL-PRF-38535. End point electrical testing of
packaged die shall be as specified in table IIA herein. Group E tests and conditions are as specified within paragraphs 4.4.4.1,
4.4.4.2, 4.4.4.2.2, 4.4.4.3, 4.4.4.4, 4.4.4.5, and 4.4.4.6.
50. DIE CARRIER
50.1 Die carrier requirements. The requirements for the die carrier shall be accordance with the manufacturer’s QM plan or
as specified in the purchase order by the acquiring activity. The die carrier shall provide adequate physical, mechanical and
electrostatic protection.
SIZE
STANDARD
5962-99618
A
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
A
SHEET
18
DSCC FORM 2234
APR 97
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-99618
60 NOTES
60.1 Intended use. Microcircuit die conforming to this drawing are intended for use in microcircuits built in accordance with
MIL-PRF-38535 or MIL-PRF-38534 for government microcircuit applications (original equipment), design applications and
logistics purposes.
60.2 Comments. Comments on this appendix should be directed to DSCC-VA, Columbus, Ohio, 43216-5000 or telephone
(614)-692-0536.
60.3 Abbreviations, symbols and definitions. The abbreviations, symbols, and definitions used herein are defined within
MIL-PRF-38535 and MIL-STD-1331.
60.4 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535.
The vendors listed within QML-38535 have submitted a certificate of compliance (see 30.6 herein) to DSCC-VA and have
agreed to this drawing.
SIZE
STANDARD
5962-99618
A
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
A
SHEET
19
DSCC FORM 2234
APR 97
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-99618
IN1
(1)
IN2
(16)
D1 (2)
S1 (3)
(15) D2
(14) S2
V- (4)
(13) V+
GND (5)
S4 (6)
D4 (7)
(11) S3
(10) D3
(8)
(9)
IN4
IN3
NOTE: Pad numbers reflect terminal numbers when placed in case outlines E and X (see Figure 1).
FIGURE A-1. Die bonding pad locations and electrical functions.
SIZE
STANDARD
MICROCIRCUIT DRAWING
5962-99618
A
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
A
SHEET
20
DSCC FORM 2234
APR 97
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-99618
Die physical dimensions.
Die size: 4630 x 2670 microns
Die thickness: 19 mils 1 mils
Interface materials.
Top metallization: Al Si Cu 16 kÅ 2 kÅ
Backside metallization: None
Glassivation.
Type: PSG
Thickness: 8 kÅ 1 kÅ
Substrate: DI (dielectric isolation)
Assembly related information.
Substrate potential: Insulator
Special assembly instructions: None
FIGURE A-1. Die bonding pad locations and electrical functions – continued.
SIZE
STANDARD
5962-99618
A
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
A
SHEET
21
DSCC FORM 2234
APR 97
STANDARD MICROCIRCUIT DRAWING BULLETIN
DATE: 01-05-11
Approved sources of supply for SMD 5962-99618 are listed below for immediate acquisition information only and
shall be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be
revised to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a
certificate of compliance has been submitted to and accepted by DSCC-VA. This bulletin is superseded by the next
dated revision of MIL-HDBK-103 and QML-38535.
Standard
microcircuit drawing
PIN 1/
Vendor
CAGE
number
Vendor
similar
PIN 2/
5962F9961801VEC
5962F9961801QEC
5962R9961801TEC
5962F9961801VXC
5962F9961801QXC
5962R9961801TXC
5962F9961801V9A
34371
34371
34371
34371
34371
34371
34371
HS1-201HSRH-Q
HS1-201HSRH-8
HS1-201HSRH-T
HS9-201HSRH-Q
HS9-201HSRH-8
HS9-201HSRH-T
HS0-201HSRH-Q
1/ The lead finish shown for each PIN representing
a hermetic package is the most readily available
from the manufacturer listed for that part. If the
desired lead finish is not listed contact the vendor
to determine its availability.
2/ Caution. Do not use this number for item
acquisition. Items acquired to this number may not
satisfy the performance requirements of this drawing.
Vendor CAGE
number
Vendor name
and address
34371
Intersil Corporation
P.O. Box 883
Melbourne, FL 32902-0883
The information contained herein is disseminated for convenience only and the
Government assumes no liability whatsoever for any inaccuracies in the
information bulletin.
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