6MBI450U-120 [ETC]
IGBTs ; IGBT的\n
| 型号： | 6MBI450U-120 |
| 厂家： | 
ETC |
| 描述： | IGBTs
|
| 文件： | 总14页 (文件大小：787K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPECIFICATION
IGBT Module
Device Name :
6MBI450U-120
MS5F 5359
Type Name
Spec. No.
:
:
Fuji Electric Co.,Ltd.
Matsumoto Factory
S.Yoshiwatari
Feb. 12 '03
Feb. 12 '03
T.Miyasaka
K.Yamada
T.Fujihira
1
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14
H04-004-07
R e v i s e d R e c o r d s
Classi-
Applied
date
Date
fication
Ind.
Content
Drawn
Checked
Approved
T.Fujihira
T.Miyasaka
K.Yamada
Issued
date
enactment
Feb.-12-'03
2
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H04-004-06
6MBI450U-120
1. Outline Drawing ( Unit : mm )
NOTE)
2. Equivalent circuit
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
[Inverter]
[Thermistor]
ꢀꢀꢀꢀꢀ②ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ ④ꢀꢀꢀꢀꢀꢀꢀꢀ ꢀꢀꢀ⑥
⑪ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ⑨ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ⑦
⑫ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ⑩ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ⑧
ꢀꢀꢀꢀꢀ①ꢀꢀꢀꢀꢀꢀꢀꢀ ꢀꢀ ③ꢀꢀꢀ ꢀꢀ ꢀꢀꢀ ꢀꢀ⑤
3
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3.Absolute Maximum Ratings ( at Tc= 25℃ unless otherwise specified ）
Maximum
Ratings
Items
Symbols
Conditions
Units
Collector-Emitter voltage
VCES
VGES
1200
±20
600
450
1200
900
V
V
Gate-Emitter voltage
Collector current
Tc=25℃
Ic
Continuous
1ms
Tc=80℃
Tc=25℃
Tc=80℃
Icp
A
-Ic
-Ic pluse
Pc
Tj
Tstg
450
900
2100
150
-40～ +125
Collector Power Dissipation
Junction temperature
Storage temperature
1 device
W
℃
between terminal and copper base *1
between thermistor and others *2
Mounting *3
Isolation
voltage
Viso
-
AC : 1min.
2500
VAC
3.5
4.5
Screw
Torque
N・m
Terminals *4
(*1) All terminals should be connected together when isolation test will be done.
(*2) Two thermistor terminals should be connected together, each other terminals should be connected together
and shorted to base plate when isolation test will be done.
(*3) Recommendable Value : 2.5~3.5 Nm (M5)
(*4) Recommendable Value : 3.5~4.5 Nm (M6)
4. Electrical characteristics ( at Tj= 25℃ unless otherwise specified)
Characteristics
Items
Symbols
ICES
Conditions
VGE = 0V
VCE = 1200V
VCE = 0V
VGE=±20V
VCE = 20V
Ic = 450mA
Units
min.
typ.
max.
Zero gate voltage
Collector current
-
-
3.0
mA
nA
V
Gate-Emitter
leakage current
IGES
-
-
600
8.5
Gate-Emitter
threshold voltage
VGE(th)
4.5
6.5
Tj= 25℃
Tj=125℃
Tj= 25℃
Tj=125℃
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2.20
2.45
1.75
2.00
50
0.36
0.21
0.03
0.37
0.07
2.05
2.15
1.60
1.70
-
2.55
-
2.1
-
VCE(sat)
VGE=15V
Ic = 450A
(terminal)
Collector-Emitter
saturation voltage
V
VCE(sat)
(chip)
Cies
ton
tr
tr (i)
toff
tf
Input capacitance
Turn-on time
VCE=10V,VGE=0V,f=1MHz
Vcc = 600V
-
nF
1.20
0.60
-
1.00
0.30
3.00
-
2.55
-
0.35
-
Ic = 450A
VGE=±15V
Rg = 1.1 Ω
μs
Turn-off time
Tj= 25℃
VGE=0V
VF
(terminal)
Tj=125℃
Forward on voltage
V
Tj= 25℃
Tj=125℃
VF
(chip)
IF = 450A
Reverse recovery time
Lead resistance, terminal-chip*
IF = 450A
μs
mΩ
ｔｒｒ
R lead
1.0
T = 25℃
T =100℃
T = 25/50℃
-
5000
495
3375
-
Resistance
R
Ω
465
3305
520
3450
B value
B
K
(*)
Biggest internal terminal resistance among arm.
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5. Thermal resistance characteristics
Characteristics
Items
Symbols
Conditions
Units
min.
typ.
max.
0.06
0.10
-
IGBT
FWD
-
-
-
-
-
Thermal resistance(1device)
Contact Thermal resistance
Rth(j-c)
Rth(c-f)
℃/W
with Thermal Compound (※)
0.0167
※ This is the value which is defined mounting on the additional cooling fin with thermal compound.
6.Recommend way of module mounting to Heat sink Clamping
（1）Initial : 1/3 specified torque, sequence (1)→(2)→(3)→(4)→(5)→(6)→(7)→(8)
（2）Final ：Full specified torque (3.5 Nm),sequence(4)→(3)→(2)→(1)→(8)→(7)→(6)→(5)
Mounting holes
(7)
(6)
(3)
(2)
(1)
(4)
(5)
(8)
Heat sink
Module
7. Indication on module
6MBI450U-120
450A 1200V
Lot.No.
Place of manufacturing (code)
8.Applicable category
This specification is applied to IGBT Module named 6MBI450U-120 .
9.Storage and transportation notes
℃ and humidity of 45 to 75% .
・ The module should be stored at a standard temperature of 5 to 35
・ Store modules in a place with few temperature changes in order to avoid condensation on the module surface.
・ Avoid exposure to corrosive gases and dust.
・ Avoid excessive external force on the module.
・ Store modules with unprocessed terminals.
・ Do not drop or otherwise shock the modules when transporting.
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10. Definitions of switching time
90%
0V
0V
V
GE
t
rr
L
I
rr
V
Ic
CE
90%
90%
Vcc
10%
10%
10%
VCE
Ic
0V
0A
R
G
VCE
t
r(i)
t
f
VGE
t
r
Ic
t
off
t
on
11. Packing and Labeling
Display on the packing box
- Logo of production
- Type name
- Lot No
- Products quantity in a packing box
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11. Reliability test results
Reliability Test Items
Reference
norms
Test
Number Accept-
of ance
sample number
cate-
Test items
Test methods and conditions
EIAJ
gories
ED-4701
A - 111
Method 1
1 Terminal Strength Pull force
(Pull test)
: 20N (Control terminal)
40N (Main terminal)
: 10±1 sec.
: 2.5 ~ 3.5 N･m (M5)
3.5 ~ 4.5 N･m (M6)
: 10±1 sec.
5
5
5
( 1 : 0 )
( 1 : 0 )
( 1 : 0 )
Test time
2 Mounting StrengthScrew torque
A - 112
Method 2
Test time
3 Vibration
Range of frequency : 10 ~ 500Hz
A - 121
Sweeping time
Acceleration
: 15 min.
: 10G
Sweeping direction : Each X,Y,Z axis
Test time
: 6 hr. (2hr./direction)
4 Shock
Maximum acceleratio : 1000G
A - 122
A - 131
5
5
( 1 : 0 )
( 1 : 0 )
Pulse width
Direction
Test time
: 0.5msec.
: Each X,Y,Z axis
: 3 times/direction
: 235±5 ℃
5 Solderabitlity
Solder temp.
Immersion time
Test time
: 5±1sec.
: 1 time
Each terminal should be Immersed in solder
within 1~1.5mm from the body.
6 Resistance to
Soldering Heat
Solder temp.
Immersion time
Test time
: 260±5 ℃
: 10±1sec.
: 1 time
A - 132
5
( 1 : 0 )
Each terminal should be Immersed in solder
within 1~1.5mm from the body.
1 High Temperature Storage temp.
Storage Test duration
: 125±5 ℃
: 1000hr.
: -40±5 ℃
: 1000hr.
: 85±3 ℃
: 85±5%
: 1000hr.
: 121 ℃
B - 111
B - 112
B - 121
5
5
5
( 1 : 0 )
( 1 : 0 )
( 1 : 0 )
2 Low Temperature Storage temp.
Storage
Test duration
Storage temp.
Relative humidity
Test duration
Test temp.
3 Temperature
Humidity
Storage
4 Unsaturated
Pressure Cooker
B - 123
B - 131
5
5
( 1 : 0 )
( 1 : 0 )
Atmospheric pressure : 2.03×105 Pa
(Reference value)
: 20hr.
Test duration
Test temp.
5 Temperature
Cycle
+3
Low temp. -40 -5
+5
:
℃
℃
High temp. 125 -5
RT 5 ~ 35 ℃
Dwell time
: High ~ RT ~ Low ~ RT
1hr. 0.5hr. 1hr. 0.5hr.
: 100 cycles
Number of cycles
Test temp.
6 Thermal Shock
+0
B - 141
5
( 1 : 0 )
:
High temp. 100 -5
℃
Low temp. 0 -+05
℃
Used liquid : Water with ice and boiling water
Dipping time
Transfer time
Number of cycles
: 5 min. par each temp.
: 10 sec.
: 10 cycles
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Reliability Test Items
Reference
norms
Test
cate-
gories
Number Accept-
of ance
sample number
Test items
Test methods and conditions
EIAJ
ED-4701
D - 313
1 High temperature
Reverse Bias
5
( 1 : 0 )
+0
-5
Test temp.
: Ta = 125
℃
(Tj ≦ 150 ℃)
: VC = 0.8×VCES
: Applied DC voltage to C-E
VGE = 0V
Bias Voltage
Bias Method
Test duration
Test temp.
: 1000hr.
2 High temperature
Bias
D - 323
5
( 1 : 0 )
+0
-5
: Ta = 125
℃
≦ 150 ℃
: VC = VGE = +20V or -20V
: Applied DC voltage to G-E
VCE = 0V
Bias Voltage
Bias Method
Test duration
: 1000hr.
3 Temperature
Humidity Bias
B - 121
D - 322
5
5
( 1 : 0 )
85 +-3oC
:
: 85 +-5%
Test temp.
Relative humidity
Bias Voltage
Bias Method
: VC = 0.8×VCES
: Applied DC voltage to C-E
VGE = 0V
Test duration
ON time
: 1000hr.
4 Intermitted
Operating Life
(Power cycle)
( for IGBT )
: 2 sec.
( 1 : 0 )
OFF time
: 18 sec.
Test temp.
:
∆
≦ 150 ℃, Ta=25±5 ℃
Number of cycles
: 15000 cycles
Failure Criteria
Item
Characteristic
Symbol
Failure criteria
Lower limit Upper limit
Unit
Note
Electrical
characteristic
Leakage current
ICES
±IGES
-
-
USL×2
USL×2
mA
µA
Gate threshold voltage VGE(th) LSL×0.8
USL×1.2 mA
Saturation voltage
Forward voltage
VCE(sat)
VF
∆ VGE
or ∆ VCE
∆ VF
-
-
-
USL×1.2
USL×1.2
V
V
Thermal
IGBT
USL×1.2 mV
resistance
FWD
-
USL×1.2 mV
Isolation voltage
Visual inspection
Peeling
Viso
Broken insulation
-
-
Visual
inspection
-
The visual sample
Plating
and the others
LSL : Lower specified limit.
USL : Upper specified limit.
Note :
Each parameter measurement read-outs shall be made after stabilizing the components
at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests.
And in case of the wetting tests, for example, moisture resistance tests, each component
shall be made wipe or dry completely before the measurement.
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Reliability Test Results
Test
cate-
gorie
s
Reference
Number
of
failure
sample
Number
of test
sample
norms
Test items
EIAJ ED-
4701
1 Terminal Strength
(Pull test)
2 Mounting Strength
A - 111
Method 1
A - 112
Method 2
A - 121
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
3 Vibration
4 Shock
A - 122
A - 131
A - 132
B - 111
B - 112
B - 121
B - 123
B - 131
B - 141
D - 313
D - 323
B - 121
D - 322
5 Solderabitlity
6 Resistance to Soldering Heat
1 High Temperature Storage
2 Low Temperature Storage
3 Temperature Humidity
Storage
4 Unsaturated
Pressure Cooker
5 Temperature Cycle
6 Thermal Shock
1 High temperature Reverse Bias
2 High temperature Bias
( for gate )
3 Temperature Humidity Bias
4 Intermitted Operating Life
(Power cycling)
( for IGBT )
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Collector current vs. Collector-Emitter voltage
Collector current vs. Collector-Emitter voltage
Tj= 25℃ / chip
Tj= 125℃ / chip
1200
1000
800
600
400
200
0
1200
1000
800
600
400
200
0
15V
VGE=20V
VGE=20V 15V
12V
12V
10V
8V
10V
8V
0
1
2
3
4
5
0
1
2
3
4
5
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
Collector current vs. Collector-Emitter voltage
VGE=15V (typ.) / chip
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj=25ﾟC / chip
1200
1000
800
600
400
200
0
10
8
Tj=25℃
6
Tj=125℃
4
Ic=900A
2
Ic=450A
Ic=225A
0
0
1
2
3
4
5
10
15
20
25
Gate - Emitter voltage : VGE [ V ]
Collector-Emitter voltage : VCE [V]
Capacitance vs. Collector-Emitter voltage (typ.)
Dynamic Gate charge (typ.)
VGE=0V, f= 1MHz, Tj= 25℃
Vcc=600V， Ic=450A，Tj= 25℃
1000.0
100.0
10.0
1.0
Cies
VGE
Cres
Coes
VCE
0.1
0
500
1000
1500
2000
2500
0
10
20
30
Collector-Emitter voltage : VCE [V]
Gate charge : Qg [ nC ]
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Switching time vs. Collector current (typ.)
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=1.1Ω, Tj= 25℃
Vcc=600V, VGE=±15V, Rg=1.1Ω, Tj=125℃
10000
1000
100
10000
1000
100
toff
ton
tr
ton
toff
tr
tf
10
10
0
200
400
600
800
0
200
400
600
800
Collector current : Ic [ A ]
Collector current : Ic [ A ]
Switching time vs. Gate resistance (typ.)
Switching loss vs. Collector current (typ.)
Vcc=600V, Ic=450A, VGE=±15V, Tj= 25℃
Vcc=600V, VGE=±15V, Rg=1.1Ω
10000
1000
100
100
80
60
40
20
0
Eoff(125℃
ton
toff
Eon(125℃)
Eoff(25℃)
tr
Eon(25℃)
tf
Err(125℃)
Err(25℃)
10
0.1
1.0
10.0
100.0
0
200
400
600
800
1000
Collector current : Ic [ A ]
Gate resistance : Rg [ Ω ]
Switching loss vs. Gate resistance (typ.)
Reverse bias safe operating area
Vcc=600V, Ic=450A, VGE=±15V, Tj= 125℃
+VGE=15V,-VGE≦15V, RG≧1.1Ω ,Tj≦125℃
Stray inductance≦100nH
300
250
200
150
100
50
1200
1000
800
600
400
200
0
Eon
Eoff
Err
0
0.1
1.0
10.0
100.0
0
200
400
600
800 1000 1200 1400
Gate resistance : Rg [ Ω ]
Collector - Emitter voltage : VCE [ V ]
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Forward current vs. Forward on voltage (typ.)
chip
Reverse recovery characteristics (typ.)
Vcc=600V, VGE=±15V, Rg=1.1Ω
1200
1000
800
600
400
200
0
1000
100
10
Irr (125℃)
Irr (25℃)
Tj=25℃
trr (125℃)
trr (25℃)
Tj=125℃
0
200
400
600
800
1000
0
1
2
3
4
Forward on voltage : VF [ V ]
Forward current : IF [ A ]
Transient thermal resistance
Temperature characteristic (typ.)
1.000
100
FWD
IGBT
0.100
0.010
0.001
10
1
0.1
0.001
0.010
0.100
1.000
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
Temperature [℃ ]
Pulse width : Pw [ sec ]
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Warnings
-
-
-
-
This product shall be used within its absolute maximum rating (voltage, current, and temperature).
This product may be broken in case of using beyond the ratings.
製品の絶対最大定格（電圧，電流，温度等）の範囲内で御使用下さい。
絶対最大定格を超えて使用すると、素子が破壊する場合があります。
Connect adequate fuse or protector of circuit between three-phase line and
this product to prevent the equipment from causing secondary destruction.
万一の不慮の事故で素子が破壊した場合を考慮し、商用電源と本製品の間に適切な容量のヒューズ
又はブレーカーを必ず付けて２次破壊を防いでください。
Use this product after realizing enough working on environment and considering of product's reliability life.
This product may be broken before target life of the system in case of using beyond the product's reliability life.
製品の使用環境を十分に把握し、製品の信頼性寿命が満足できるか検討の上、本製品を適用して下さい。
製品の信頼性寿命を超えて使用した場合、装置の目標寿命より前に素子が破壊する場合があります。
If the product had been used in the environment with acid, organic matter, and corrosive gas ( hydrogen sulfide,
sulfurous acid gas), the product's performance and appearance can not be ensured easily.
酸・有機物・腐食性ガス（硫化水素，亜硫酸ガス等）を含む環境下で使用された場合、製品機能・外観などの保証は
致しかねます。
Use this product within the power cycle curve (Technical Rep.No. : MT5F12959)
-
-
本製品は、パワーサイクル寿命カーブ以下で使用下さい(技術資料No.: MT5F12959)
Never add mechanical stress to deform the main or control terminal.
The deformed terminal may cause poor contact problem.
主端子及び制御端子に応力を与えて変形させないで下さい。ꢀ端子の変形により、接触不良などを引き起こす場合
があります。
-
-
According to the outline drawing, select proper length of screw for main terminal.
Longer screws may break the case.
本製品に使用する主端子用のネジの長さは、外形図に従い正しく選定下さい。ꢀ
ネジが長いとケースが破損する場合があります。
Use this product with keeping the cooling fin's flatness between screw holes within 100um at 100mm and the
roughness within 10um. Also keep the tightening torque within the limits of this specification.
Improper handling may cause isolation breakdown and this may lead to a critical accident.
冷却フィンはネジ取り付け位置間で平坦度を100mmで100um以下、表面の粗さは10um以下にして下さい。ꢀ誤った取り扱
いをすると絶縁破壊を起こし、重大事故に発展する場合があります。
-
It shall be confirmed that IGBT's operating locus of the turn-off voltage and current are within the RBSOA
specification. This product may be broken if the locus is out of the RBSOA.
ターンオフ電圧・電流の動作軌跡がRBSOA仕様内にあることを確認して下さい。
RBSOAの範囲を超えて使用すると素子が破壊する可能性があります。
-
-
-
If excessive static electricity is applied to the control terminals, the devices may be broken.
Implement some countermeasures against static electricity.
制御端子に過大な静電気が印加された場合、素子が破壊する場合があります。
取り扱い時は静電気対策を実施して下さい。
Never add the excessive mechanical stress to the main or control terminals
when the product is applied to Equipments. The module structure may be broken.
素子を装置に実装する際に、主端子や制御端子に過大な応力を与えないで下さい。
端子構造が破壊する可能性があります。
In case of insufficient -VGE, erroneous turn-on of IGBT may occur.
-VGE shall be set enough value to prevent this malfunction. (Recommended value : -VGE = -15V)
逆バイアスゲート電圧-VGEが不足しますと誤点弧を起こす可能性があります。
誤点弧を起こさない為に-VGEは十分な値で設定して下さい。ꢀ（推奨値 : -VGE = -15V)
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Cautions
-
Fuji Electric is constantly making every endeavor to improve the product quality and reliability.ꢀHowever,
semiconductor products may rarely happen to fail or malfunction. To prevent accidents causing injury or
death, damage to property like by fire, and other social damage resulted from a failure or malfunction of
the Fuji Electric semiconductor products, take some measures to keep safety such as redundant design,
spread-fire-preventive design, and malfunction-protective design.
富士電機は絶えず製品の品質と信頼性の向上に努めています。しかし、半導体製品は故障が発生したり、
誤動作する場合があります。富士電機製半導体製品の故障または誤動作が、結果として人身事故・火災
等による財産に対する損害や社会的な損害を起こさないように冗長設計・延焼防止設計・誤動作防止設計
など安全確保のための手段を講じて下さい。
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The application examples described in this specification only explain typical ones that used the Fuji Electric
products. This specification never ensure to enforce the industrial property and other rights, nor license the
enforcement rights.
本仕様書に記載してある応用例は、富士電機製品を使用した代表的な応用例を説明するものであり、本仕様書
によって工業所有権、その他権利の実施に対する保障または実施権の許諾を行うものではありません。
The product described in this specification is not designed nor made for being applied to the equipment or
systems used under life-threatening situations. When you consider applying the product of this specification
to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices,
atomic control systems and submarine relaying equipment or systems,ꢀplease apply after confirmation
of this product to be satisfied about system construction and required reliability.
本仕様書に記載された製品は、人命にかかわるような状況下で使用される機器あるいはシステムに用いられることを
目的として設計・製造されたものではありません。本仕様書の製品を車両機器、船舶、航空宇宙、医療機器、原子力
制御、海底中継機器あるいはシステムなど、特殊用途へのご利用をご検討の際は、システム構成及び要求品質に
満足することをご確認の上、ご利用下さい。
If there is any unclear matter in this specification, please contact Fuji Electric Co.,Ltd.
14
MS5F 5359
14
H04-004-03
相关型号：
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