7P008FLA2401I15 [ETC]
Peripheral Miscellaneous ; 周边其他\n
| 型号： | 7P008FLA2401I15 |
| 厂家： | 
ETC |
| 描述： | Peripheral Miscellaneous
|
| 文件： | 总15页 (文件大小：142K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PCMCIA Flash Memory Card
FLA Series
PCMCIA Flash Memory Card
General Description
1 MEGABYTE through 40 MEGABYTE (Intel/Sharp based)
Features
WEDC’s FLA Series Flash memory cards offer high density
linear Flash solid state storage solutions for code and data
storage, high performance disk emulation and execute in place
(XIP) applications in mobile PC and dedicated (embedded)
equipment.
• Low cost High Density Linear Flash Card
• Supports 5V only systems or 5V systems with
12V VPP
• Based on Intel/Sharp FlashFile Components
FLA series cards conform to PCMCIA international standard.
• Fast Read Performance
- 150ns or 200ns Maximum Access Time
The card’s control logic provides the system interface and
controls the internal Flash memories. Card can be
read/written in byte-wide or word-wide mode which allows
for flexible integration into various systems. Combined with
file management software, such as Flash Translation Layer
(FTL), FLA Flash cards provide removable high-performance
disk emulation.
• x8 / x16 Data Interface
• High Performance Random Writes
- 8µs Typical Word Write Time
• Automated Write and Erase Algorithms
- Command User Interface
The FLA series offers low power modes controlled by
registers. Standard cards contain separate 2kB EEPROM
memory for Card Information Structure (CIS) which can be
used for easy identification of card characteristics.
• 100,000 Erase Cycles per Block
• 64K word symmetrical Block Architecture
• PC Card Standard Type I Form Factor
The WEDC FLA series is based on Intel/Sharp Flash
memories.
Note:
Standard options include attribute memory. Cards without
attribute memory are available. Cards are also available with or
without a hardware write protect switch.
Architecture Overview
WEDC’s FLA series is designed to support from 2 to 20, 4Mb, 8Mb or 16Mb components, providing a wide range
of density options. Cards are based on the 28F008SA (8Mb) for 12V VPP applications or on the 28F004S5 (4Mb),
28F008S5 (8Mb) and 28F016S5 (16Mb) devices for 5V only applications. Devices codes for the 28F004S5,
28F008SA, 28F008S5 and the 28F016S5 are: A7H, A2H, A6H and AAh respectively. Systems should be able to
recognize all four codes. Cards utilizing the 8Mb components provide densities ranging from 2MB to 20MB in 2MB
increments, cards utilizing 16Mb components provide densities ranging from 4MB to 40MB in 4MB increments. 4
Mbit memory devices are used only for smallest capacity cards (1MB).
In support of the PC Card 95 standard for word wide access devices are paired. Therefore, the Flash array is
structured in 64K word (128kBytes) blocks. Write, read and block erase operations can be performed as either a
word or byte wide operation . By multiplexing A0, CE1# and CE2#, 8-bit hosts can access all data on data lines
DQ0 - DQ7.
The FLA21-FLA36 series also supports the following PCMCIA compatible register functions: Soft Reset via the
Configuration Option Register, Power Down (sleep mode) via the Configuration and Status Register and
monitoring of Ready/Busy, Soft Reset and Power Down via the Card Status Register (cards without attribute
memory and versions FLA51 - FLA66 do not have registers).
The FLA series cards conform with the PC Card Standard (PCMCIA) and JEIDA, providing electrical and physical
compatibility. The PC Card form factor offers an industry standard pinout and mechanical outline, allowing density
upgrades without system design changes.
WEDC’s standard cards are shipped with WEDC’s Logo. Cards are also available with blank housings (no Logo).
The blank housings are available in both a recessed (for label) and flat housing. Please contact WEDC sales
representative for further information on Custom artwork.
1
August 2000 Rev. 4 - ECO #13125
PC Card Products
PCMCIA Flash Memory Card
FLA Series
Manuf ID Device ID
Block Diagram
Device type
28F004S5
89
89
89
A7
A2
A6
H
H
28F008SA
28F008S5
28F016S5
H
H
Device Pair (N/2 - 1)
Device (N-1)
CSn
H
H
H
Device (N-2)
89
AA
H
Array
Address
Bus
ADDRESS
BUFFER
ADDRESS BUS
A1-A25
Control
Address
Bus
M Res
WE#
OE#
WL#
RL#
WH#
RH#
CSn
Control Logic
PCMCIA Interface
CE2#
CE1#
Cn
C0
Device Pair 1
Device 3
REG#
A0
WP
Device 2
Device 0
CS1
CS0
At/Reg enable
Ctrl
SR Clr
Reg Clr
/SR
/PD
CS0
Device Pair 0
Device 1
Card
Management
Registers
4000h
0000h
Vcc
RH#
WL# RL#
WH#
DATA
BUS
Q8-Q15
DATA
BUS
Q0-Q7
Vcc
attrib. mem
CIS
EEPROM 2kB
control
Q0-Q7
Vcc
I/O buffer
DATA
BUS
D0-D7
DATA
BUS
D8-D15
Registers in Attribute Memory Space
CSR
Configuration Status Register: ADRS=4002h
Write Only
Register NAME
Status Reg.
ADDRESS
PDwn
not supported
not supported
D7 D6 D5 D4
D3 D2 D1 D0
4100h
D2 Power Down; active High
1=Place all memory devices in power down mode
0=normal operation
Power On default=0
4002h
4000h
Config. and Status Reg.
Configuration Option Register
SR
Read Only
Status Register: ADRS=4100h
COR
not supported
SReset
not supported
R/BSY
PDwn
Configuration Option Register: ADRS=4000h
Write Only
D7 D6
D5 D4 D3
D2 D1 D0
LREQ
SRES
-Configuration Index-
D5 Represents the state of SRESET bit in COR (4000h)
1=Reset
D0
D7 D6 D5 D4 D3 D2 D1
0=Normal operation
Power On default D5=0
D3 Represents the state of Power Down bit (D2) in CSR (4002h)
1=Power Down
D7 Soft Reset, active High
1 = Reset State
0 = End Reset State
D6 LevelReq (not supported)
D0 Reflects the card's Ready/Busy signal (pin 16) driven by
memory components Ready/Busy outputs.This bit allows software
polling of the card's Ready/Busy status.
1=Ready
D5-D0 Configuration index (not supported)
2
August 2000 Rev. 4 - ECO #13125
PC Card Products
PCMCIA Flash Memory Card
FLA Series
Pinout
Pin
1
2
3
4
5
6
7
8
Signal name
GND
DQ3
DQ4
DQ5
DQ6
DQ7
CE1#
A10
I/O
Function
Ground
Data bit 3
Data bit 4
Data bit 5
Active
Pin
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
Signal name
GND
CD1#
DQ11
DQ12
DQ13
DQ14
DQ15
CE2#
VS1
I/O
Function
Ground
Card Detect 1
Data bit 11
Data bit 12
Data bit 13
Data bit 14
Data bit 15
Card Enable 2
Voltage Sense 1
Reserved
Active
LOW
I/O
I/O
I/O
I/O
I/O
I
I
I
I
I
I
I
I
I
O
O
I/O
I/O
I/O
I/O
I
Data bit 6
Data bit 7
Card enable 1
Address bit 10
Output enable
Address bit 11
Address bit 9
Address bit 8
Address bit 13
Address bit 14
Write Enable
Ready/Busy
Supply Voltage
Prog. Voltage
Address bit 16
Address bit 15
Address bit 12
Address bit 7
Address bit 6
Address bit 5
Address bit 4
Address bit 3
Address bit 2
Address bit 1
Address bit 0
Data bit 0
LOW
LOW
I
O
LOW
N.C.
9
OE#
A11
A9
A8
A13
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
RFU
RFU
A17
A18
A19
A20
A21
Vcc
Vpp2
A22
Reserved
I
I
I
I
I
Address bit 17
Address bit 18
Address bit 19
Address bit 20
Address bit 21
Supply Voltage
Prog. Voltage
Address bit 22
Address bit 23
Address bit 24
Address bit 25
Voltage Sense 2
Card Reset
Extended Bus cycle Low(2,4)
Reserved
Attrib Mem Select
Bat. Volt. Detect 2
Bat. Volt. Detect 1
Data bit 8
A14
WE#
RDY/BSY#
Vcc
Vpp1
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
WP
LOW
LOW (4)
2MB(3)
4MB(3)
N.C.
N.C.
I
I
I
I
I
I
I
I
I
I
I
I
I
O
I
8MB(3)
16MB(3)
32MB(3)
64MB(3)
N.C.
A23
A24
A25
VS2
RST
HIGH (4)
Wait#
RFU
REG#
BVD2
BVD1
DQ8
DQ9
DQ10
CD2#
GND
O
I
O
O
I/O
I/O
O
I
I
(2)
(2)
I/O
I/O
I/O
O
Data bit 1
Data bit 2
Write Potect
Ground
Data bit 9
Data bit 10
Card Detect 2
Ground
HIGH
O
LOW
GND
Notes:
1. RDY/BSY signal is an “Open drain” type output, pull-up resistor on host side is required.
2. Wait#, BVD1 and BVD2 are driven high for compatibility.
3. Shows density for which specified address bit is MSB. Higher order address bits are no connects
(ie 4MB A21 is MSB A22 - A25 are NC).
4. NC - No Connection for FLA51 - FLA66.
Mechanical
Interconnect area
1.6mm ± 0.05
(0.063”)
3.0mm MIN
10.0mm MIN
(0.400”)
1.0mm ± 0.05
(0.039”)
Substrate area
54.0mm ± 0.10
(2.126”)
85.6mm ± 0.20
1.0mm ± 0.05
(3.370”)
(0.039”)
10.0mm MIN
(0.400”)
3.3mm ± T1 (0.130”)
T1=0.10mm interconnect area
T1=0.20mm substrate area
3
August 2000 Rev. 4 - ECO #13125
PC Card Products
PCMCIA Flash Memory Card
FLA Series
Card Signal Description
Symbol
Type
Name and Function
ADDRESS INPUTS:
64MB of memory on the card. Signal A0 is not used in word access
mode. A25 is the most significant bit
INPUT
A0 through A25 enable direct addressing of up to
A0 - A25
DATA INPUT/OUTPUT:
INPUT/OUTPUT
INPUT
DQ0 THROUGH DQ15 constitute the bi-
directional databus. DQ15 is the MSB.
CARD ENABLE 1 AND 2:
DQ0 - DQ15
CE1#, CE2#
CE1# enables even byte accesses, CE2#
enables odd byte accesses. Multiplexing A0, CE1# and CE2# allows 8-
bit hosts to access all data on DQ0 - DQ7.
OUTPUT ENABLE:
memory card.
INPUT
Active low signal gating read data from the
OE#
WRITE ENABLE:
card.
INPUT
Active low signal gating write data to the memory
WE#
READY/BUSY OUTPUT:
OUTPUT
Indicates status of internally timed erase or
RDY/BSY#
program algorithms. A high output indicates that the card is ready to
accept accesses. A low output indicates that one or more devices in the
memory card are busy with internally timed erase or write activities.
CARD DETECT 1 and 2:
signals are internally connected to ground on the card. The host shall
monitor these signals to detect card insertion (pulled-up on host side).
OUTPUT
OUTPUT
Provide card insertion detection. These
CD1#, CD2#
WP
WRITE PROTECT:
Write protect reflects the status of the Write Protect
switch on the memory card. WP set to high = write protected, providing
internal hardware write lockout to the Flash array.
If card does not include optional write protect switch, this signal will be
pulled low internally indicating write protect = "off".
PROGRAM/ERASE POWER SUPPLY:
N.C.
Provides programming
VPP1, VPP2
voltages for card (12V). Not connected for 5V only card.
CARD POWER SUPPLY: (5.0V).
CARD GROUND
VCC
GND
REG#
ATTRIBUTE MEMORY SELECT :
INPUT
Active low signal, enables access to
Attribute Memory Plane, occupied by Card Information Structure and
Card Registers.
RESET:
INPUT
Active high signal for placing card in Power-on default state.
Reset can be used as a Power-Down signal for the memory array.
WAIT:
states are generated.
BATTERY VOLTAGE DETECT: These signals are pulled high to
maintain SRAM card compatibility.
RST
OUTPUT
OUTPUT
OUTPUT
This signal is pulled high internally for compatibility. No wait
WAIT#
BVD1, BVD2
VS1, VS2
VOLTAGE SENSE:
Notifies the host socket of the card's VCC
requirements. VS1 and VS2 are open to indicate a 5V card .
RESERVED FOR FUTURE USE
NO INTERNAL CONNECTION TO CARD:
floating
RFU
N.C.
pin may be driven or left
Functional Truth Table
READ function
Common Memory
Attribute Memory
Function Mode
/CE2 /CE1 A0
/OE /WE
/REG D15-D8
D7-D0
High-Z
High-Z Even-Byte
High-Z Odd-Byte
Odd-Byte Even-Byte
/REG D15-D8
D7-D0
High-Z
Standby Mode
Byte Access (8 bits)
H
H
H
L
H
L
L
X
L
H
X
X
X
L
L
L
L
X
H
H
H
H
X
H
H
H
H
High-Z
X
L
L
L
L
High-Z
High-Z Even-Byte
High-Z Not Valid
Not Valid Even-Byte
Not Valid
Word Access (16 bits)
Odd-Byte Only Access
WRITE function
L
L
H
Odd-Byte
High-Z
High-Z
Standby Mode
Byte Access (8 bits)
H
H
H
L
H
L
L
L
H
X
L
H
X
X
X
H
H
H
H
X
L
L
L
L
X
H
H
H
H
X
X
X
X
X
L
L
L
L
X
X
X
X
X
X
Even-Byte
Odd-Byte
Even-Byte
X
Even-Byte
X
Word Access (16 bits)
Odd-Byte Only Access
Odd-Byte Even-Byte
Odd-Byte
L
X
4
August 2000 Rev. 4 - ECO #13125
PC Card Products
PCMCIA Flash Memory Card
FLA Series
Absolute Maximum Ratings (1)
Note:
Operating Temperature TA (ambient)
Commercial
(1) Stress greater than those listed under
“Absolute Maximum ratings” may cause
permanent damage to the device. This is a
stress rating only and functional operation at
these or any other conditions greater than
those indicated in the operational sections of
this specification is not implied. Exposure to
absolute maximum rating conditions for
extended periods may affect reliability.
0°C to +60 °C
Industrial
Storage Temperature
Commercial
Industrial
Voltage on any pin relative to VSS
VCC supply Voltage relative to VSS
-40°C to +85 °C
-30°C to +80 °C
-40°C to +85 °C
-0.5V to VCC+0.5V
-0.5V to +7.0V
DC Characteristics (1)
Symbol Parameter
VCC Read Current
Density
(Mbytes)
Notes Typ(3) Max Units Test Conditions
All
35
mA VCC = VCCmax
tcycle = 150ns,CMOS levels
I
CCR
28F008S5
28F016S5
28F008SA
VCC Program Current
All
75
mA
I
CCW
VCC Program Current
VPP Program Current
VCC Erase Current
All
All
All
30
30
mA
I
CCW
mA
Vpp=12V
I
PPW
100
230
mA
I
CCE
VCC Standby Current
2MB
20MB
2MB
20MB
4MB
2
110
900
60
420
60
µA VCC = VCCmax
I
CCS
28F008SA
Control Signals = VCC
Reset = VSS, CMOS levels
(CMOS)
2
28F008S5
2
28F016S5
40MB
380
CMOS Test Conditions: VCC = 5V ± 5%, VIL = VSS ± 0.2V, VIH = VCC ± 0.2V
Notes:
1. All currents are RMS values unless otherwise specified. ICCR, ICCW and ICCE are based on Byte wide operations.
For 16 bit operation values are double.
2. Control Signals: CE1#, CE2#, OE#, WE#, REG#.
3. Typical: VCC = 5V, T = +25C.
Symbol
Parameter
Notes
Min
Max
Units
Test Conditions
Input Leakage Current
1
±20
µA
VCC = VCCMAX
Vin =VCC or VSS
VCC = VCCMAX
Vout =VCC or VSS
I
I
LI
Output Leakage Current
1
±20
µA
LO
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
1
1
1
1
1
0
0.8
V
V
V
V
V
V
V
V
V
V
IL
0.7VCC VCC+0.5
0.4
IH
IOL = 3.2mA
IOH = -2.0mA
OL
OH
LKO
VCC-0.4
2.0
VCC
VCC Erase/Program
Lock Voltage
Notes:
1. Values are the same for byte and word wide modes for all card densities.
2. Exceptions: Leakage currents on CE1#, CE2#, OE#, REG# and WE# will be < 500 µA when VIN = GND due to
internal pull-up resistors. Leakage currents on RST will be <150µA when VIN=VCC due to internal pull-down resistor.
5
August 2000 Rev. 4 - ECO #13125
PC Card Products
PCMCIA Flash Memory Card
FLA Series
AC Characteristics
Read Timing Parameters
150ns
Min
SYMBOL
(PCMCIA)
tC(R)
Parameter
Max
Unit
Read Cycle Time
150
ns
ns
ns
ns
ns
ns
ns
ns
ns
ta(A)
Address Access Time
Card Enable Access Time
Output Enable Access Time
Address Setup Time
150
150
75
20
0
ta(CE)
ta(OE)
tsu(A)
tsu(CE)
th(A)
Card Enable Setup Time
Address Hold Time
20
20
0
th(CE)
tv(A)
Card Enable Hold Time
Output Hold from Address
Change
tdis(CE)
tdis(OE)
ten(CE)
ten(OE)
trec(RSR)
Output Disable Time from CE#
75
75
ns
ns
ns
ns
ns
Output Disable Time from OE#
Output Enable Time from CE#
Output Enable Time from OE#
5
5
Power Down recovery to Output
Delay. VCC = 5V
500
Note: AC timing diagrams and characteristics are guaranteed to meet or exceed PCMCIA 2.1 specifications.
Read Timing Diagram
tc(R)
th(A)
ta(A)
A[25::0], /REG
/CE1, /CE2
tv(A)
ta(CE)
tsu(CE)
NOTE 1
NOTE 1
th(CE)
ta(OE)
tsu(A)
tdis(CE)
/OE
tdis(OE)
ten(OE)
D[15::0]
DATA VALID
Note: Signal may be high or low in this area.
6
August 2000 Rev. 4 - ECO #13125
PC Card Products
PCMCIA Flash Memory Card
FLA Series
Write Timing Parameters
150ns
Min
SYMBOL
(PCMCIA)
tCW
Parameter
Max
Unit
Write Cycle Time
Write Pulse Width
Address Setup Time
150
80
ns
ns
ns
ns
ns
tw(WE)
tsu(A)
20
tsu(A-WEH) Address Setup Time for WE#
100
100
tsu(CE-
WEH)
Card Enable Setup Time for WE#
tsu(D-WEH) Data Setup Time for WE#
50
20
20
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
th(D)
Data Hold Time
trec(WE)
tdis(WE)
tdis(OE)
ten(WE)
ten(OE)
Write Recover Time
Output Disable Time from WE#
Output Disable Time from OE#
Output Enable Time from WE#
Output Enable Time from OE#
75
75
5
5
tsu(OE-WE) Output Enable Setup from WE#
th(OE-WE) Output Enable Hold from WE#
10
10
0
tsu(CE)
th(CE)
Card Enable Setup Time from OE#
Card Enable Hold Time
20
Note: AC timing diagrams and characteristics are guaranteed to meet or exceed PCMCIA 2.1 specifications.
Write Timing Diagram
tc(W )
A [2 5 ::0 ], /R E G
ts u (A -W E H )
tre c (W E )
th (C E )
ts u (C E -W E H )
tsu (C E )
/C E 1 , /C E 2
N O T E
1
N O T E
1
/O E
th (O E -W E )
th (D )
tw (W E )
ts u (A )
/W E
tsu (O E -W E )
ts u (D -W E H )
D [1 5 ::0 ](D in )
N O T E
2
D A T A IN P U T
td is (W E )
td is(O E )
te n (O E )
te n (W E )
N O T E
2
D [1 5 ::0 ](D o u t)
Notes:
1. Signal may be high or low in this area
2. When the data I/O pins are in the output state, no signals shall be
applied to the data pins (D15 - D0) by the host system.
7
August 2000 Rev. 4 - ECO #13125
PC Card Products
PCMCIA Flash Memory Card
FLA Series
Data Write and Erase Performance (1,3)
VCC = 5V ± 5%, TA = 0C to + 70C
Symbol Parameter
Notes
Min Typ(1) Max Units
Word/Byte Program time
4
8
µs
tWHQV1
tEHQV1
tWHQV2
tEHQV2
Block Program Time
Block Erase Time
device SA
device S5
0.6
0.5
2.1 sec
0.4
0.9
device SA
device S5
1.6
1.1
10
sec
Notes:
1. Typical: Nominal voltages and TA = 25C.
2. Excludes system overhead.
3. Valid for all speed options.
4. To maximize system performance RDY/BSY# signal should be polled.
8
August 2000 Rev. 4 - ECO #13125
PC Card Products
PCMCIA Flash Memory Card
FLA Series
PRODUCT MARKING
WED7P016FLA6200C15 C995 9915
EDI
Date code
Lot code / trace number
Part number
Company Name
Note:
Some products are currently marked with our pre-merger company name/acronym (EDI). During our
transition period, some products will also be marked with our new company name/acronym (WED).
Starting October 2000 all PCMCIA products will be marked only with the WED prefix.
PART NUMBERING
7P016FLA6200C15
Card access time
15
25
150ns
250ns
Temperature range
C
I
Commercial 0°C to +70°C
Industrial -40°C to +85°C
Packaging option
00
Standard, type 1
Card family and version
- See Card Family and Version Info. for details (next page)
Card capacity
016 16MB
PC card
P
Standard PCMCIA
R
Ruggedized PCMCIA
Card technology
7
8
FLASH
SRAM
9
August 2000 Rev. 4 - ECO #13125
PC Card Products
PCMCIA Flash Memory Card
FLA Series
Card Family and Version Information
FLA21-FLA24
FLA21
Based on 28F008SA (requires 12V VPP for programming and erase functions)
No Attribute Memory, no Write Protect
With Attribute Memory, no Write Protect
No Attribute Memory, with Write Protect
With Attribute Memory, with Write Protect
FLA22
FLA23
FLA24
Example P/N 7P004FLA2200C15
FLA25-FLA28 Based on 28F008S5 for 5V only applications
FLA25
FLA26
FLA27
FLA28
No Attribute Memory, no Write Protect
With Attribute Memory, no Write Protect
No Attribute Memory, with Write Protect
With Attribute Memory, with Write Protect
Example P/N 7P004FLA2600C15
FLA29-FLA32 Based on 28F016S5 for 5V only applications
FLA29
FLA30
FLA31
FLA32
No Attribute Memory, no Write Protect
With Attribute Memory, no Write Protect
No Attribute Memory, with Write Protect
With Attribute Memory, with Write Protect
Example P/N 7P004FLA3000C15
FLA33-FLA36 Based on 28F004S5 for 5V only applications
FLA33
FLA34
FLA35
FLA36
No Attribute Memory, no Write Protect
With Attribute Memory, no Write Protect
No Attribute Memory, with Write Protect
With Attribute Memory, with Write Protect
Example P/N 7P004FLA3600C15
FLA51-FLA54 Based on 28F008SA Similar to FLA21-FLA24: does not support registers and signals
RST, RDY/BSY, Wait are not connected
FLA51
No Attribute Memory, no Write Protect
With Attribute Memory, no Write Protect
No Attribute Memory, with Write Protect
With Attribute Memory, with Write Protect
FLA52
FLA53
FLA54
Example P/N 7P004FLA5200C15
FLA55-FLA58 Based on 28F008S5 Similar to FLA25-FLA28: does not support registers and signals
RST, RDY/BSY, Wait are not connected
FLA55
No Attribute Memory, no Write Protect
With Attribute Memory, no Write Protect
No Attribute Memory, with Write Protect
With Attribute Memory, with Write Protect
FLA56
FLA57
FLA58
Example P/N 7P004FLA5600C15
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August 2000 Rev. 4 - ECO #13125
PC Card Products
PCMCIA Flash Memory Card
FLA Series
FLA59-FLA62
Based on 28F016S5 Similar to FLA29-FLA32: does not support registers and signals
RST, RDY/BSY, Wait are not connected
FLA59
No Attribute Memory, no Write Protect
With Attribute Memory, no Write Protect
No Attribute Memory, with Write Protect
With Attribute Memory, with Write Protect
FLA60
FLA61
FLA62
Example P/N 7P004FLA6000C15
FLA63-FLA66 Based on 28F004S5 Similar to FLA33-FLA36: does not support registers and signals
RST, RDY/BSY, Wait are not connected
FLA63
No Attribute Memory, no Write Protect
With Attribute Memory, no Write Protect
No Attribute Memory, with Write Protect
With Attribute Memory, with Write Protect
FLA64
FLA65
FLA66
Example P/N 7P004FLA6600C15
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August 2000 Rev. 4 - ECO #13125
PC Card Products
PCMCIA Flash Memory Card
FLA Series
Ordering Information
7P XXX FLAYY SS T ZZ
where
XXX:
002 1)
004
2MB
4MB
6MB
8MB
006 1)
008
010 1)
012
10MB
12MB
14MB
16MB
18MB
20MB
24MB
28MB
32MB
36MB
40MB
014 1)
016
018 1)
020
024 2)
028 2)
032 2)
036 2)
040 2)
1) available only for FLA21-FLA24, FLA25-FLA28, FLA51-FLA54,
and FLA55-FLA59
2) available only for FLA29-FLA32 and FLA59-FLA62
FLAYY:
SS:
Card Family and Version (See Card Family and Version Information)
00
01
02
WEDC Logo Silkscreen
Blank Housing, Type I
Blank Housing, Type I Recessed
T:
C
I**
Commercial
Industrial
0°C to +70°C
-40°C to +85°C
ZZ:
15
150ns
Notes: Options without attribute memory and with hardware write protect switch are available.
** Denotes advanced information.
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August 2000 Rev. 4 - ECO #13125
PC Card Products
PCMCIA Flash Memory Card
FLA Series
CIS Information for FLA Series Cards
Address
00H
Value
01H
03H
53H
06H
0EH
16H
1EH
26H
2EH
36H
3EH
46H
4EH
5EH
6EH
7EH
8EH
9EH
FFH
18H
02H
89H
A2H
A6H
AAH
Description
Address
30H
32H
34H
36H
38H
3AH
3CH
3EH
40H
42H
44H
46H
48H
4AH
4CH
4EH
50H
52H
54H
56H
58H
Value
F6H
01H
00H
00H
15H
47H
05H
00H
45H
44H
49H
37H
50H
30H
Description
TPLMID_MANF: LSB
TPLMID_MANF: MSB
EDI
CISTPL_DEVICE
EDI
02H
TPL_LINK
04H
FLASH = 150ns (device writable)
LSB:
MSB:
Number Not Assigned
06H
CARD SIZE: 2MB
4MB
Number Not Assigned
CISTPL_VERS1
6MB
TPL_LINK
8MB
TPLLV1_MAJOR
10MB
TPLLV1_MINOR
12MB
E
D
I
14MB
16MB
18MB
7
P
0
x
20MB
24MB
28MB
32MB
x
36MB
F
L
A
46H
4CH
41H
32H
32H
32H
36H
33H
30H
2DH
2DH
2DH
31H
35H
20H
00H
43H
4FH
50H
59H
52H
49H
47H
48H
54H
20H
40MB
08H
0AH
0CH
0EH
10H
END OF DEVICE
CISTPL_JEDEC_C
TPL_LINK
INTEL - ID
2
2
2
6
3
0
based on
28F008SA
based on
28F008S5
based on
28F016S5
INTEL
28F008SA - ID
28F008S5 - ID
INTEL
INTEL
28F016S5 - ID
12H
14H
16H
18H
1AH
1CH
1EH
20H
22H
24H
26H
28H
2AH
5AH
5CH
5EH
60H
62H
64H
66H
68H
6AH
6CH
6EH
70H
72H
74H
76H
78H
7AH
-
17H
03H
42H
01H
FFH
1EH
06H
02H
11H
01H
01H
01H
01H
CISTPL_DEVICE_A
TPL_LINK
-
EEPROM - 200ns
Device Size = 2KBytes
END OF TUPLE
CISTPL_DEVICEGEO
TPL_LINK
-
1
5
SPACE
END TEXT
DGTPL_BUS
C
DGTPL_EBS
O
DGTPL_RBS
P
DGTPL_WBS
Y
DGTPL_PART
R
FLASH DEVICE
NON-INTERLEAVED
CISTPL_MANFID
TPL_LINK(04H)
I
G
2CH
2EH
H
T
20H
04H
SPACE
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August 2000 Rev. 4 - ECO #13125
PC Card Products
PCMCIA Flash Memory Card
FLA Series
CIS Information for FLA Series Cards (Cont.)
Address
7CH
7EH
80H
82H
84H
86H
88H
8AH
8CH
8EH
90H
Value
45H
4CH
45H
43H
54H
52H
4FH
4EH
49H
43H
20H
44H
45H
53H
49H
47H
4EH
53H
20H
49H
4EH
43H
4FH
52H
50H
4FH
52H
41H
54H
45H
44H
20H
00H
31H
39H
39H
37H
00H
FFH
1AH
05H
01H
00H
00H
40H
03H
00H
FFH
00H
Description
E
L
E
C
T
R
O
N
I
C
SPACE
92H
94H
96H
98H
D
E
S
I
G
N
S
9AH
9CH
9EH
A0H
A2H
A4H
A6H
A8H
AAH
ACH
AEH
B0H
B2H
B4H
B6H
B8H
BAH
BCH
BEH
C0H
C2H
C4H
C6H
C8H
CAH
CCH
CEH
D0H
D2H
D4H
D6H
D8H
DAH
DCH
SPACE
I
N
C
O
R
P
O
R
A
T
E
D
SPACE
END TEXT
1
9
9
7
END TEXT
END OF LIST
CISTPL_CONF
TPL_LINK
TPCC_SZ
TPCC_LAST
TPCC_RADR
TPCC_RADR
TPCC_RMSK
NULL CONTROL TUPLE
CISTPL_END
INVALID ADDRESS
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August 2000 Rev. 4 - ECO #13125
PC Card Products
PCMCIA Flash Memory Card
FLA Series
Revision History:
rev level
description
date
rev 0
initial release
May 26, 1998
rev 1
rev 2
Logo change
May 27, 1999
Change in Ordering info:
added FLA24, took “EDI”
off of all part numbers,
January 31, 2000
changed “EDI Silkscreen”
to “WEDC Logo Silkscreen”
rev 3
Heading/Logo changed and
added to all pages
May 30, 2000
Changes to Pages 1 & 12
Pages 9-11:
Added Product Marking Info,
added Family and Version Information,
edited Ordering Info,
edited General description
and edited Architecture Overview
rev 4
Corrected Errors on pgs. 6 & 7
August 1, 2000
White Electronic Designs Corporation
One Research Drive, Westborough, MA 01581, USA
tel: (508) 366 5151
fax: (508) 836 4850
www.whiteedc.com
15
August 2000 Rev. 4 - ECO #13125
PC Card Products
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