AP104-69 [ETC]

RF Amplifier ; 射频放大器\n
AP104-69
型号: AP104-69
厂家: ETC    ETC
描述:

RF Amplifier
射频放大器\n

射频放大器 微波
文件: 总4页 (文件大小:257K)
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AP1047

TRANSISTOR | BJT | PNP | 225V V(BR)CEO | 3A I(C) | TO-66

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20 ETC

AP1047

AP1047 is a linear, three-stage power amplifier MMIC with super high output power in 2.4GHz band utilizing InGaP/GaAs HBT process. With the excellent linearity performance, the device delivers 22dBm output power under 64QAM OFDM modulation, with 2.5% EVM at 3.3V. The PA also includes on-chip power detector, providing a DC voltage proportional to the output power of device. The AP1047 is housed in a 3 x 3(mm), 16 pin, QFN leadless package.

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35 RFHIC

AP1048

TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 30A I(C) | TO-210AE

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32 ETC

AP1048

暂无描述

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5 APITECH

AP1049

TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 30A I(C) | TO-3

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10 ETC

AP1049

Transistor,

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1 APITECH

AP105

MAIN UNIT OF CRIMPING MACHINE

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62 HRS

AP1050

TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 30A I(C) | TO-210AE

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37 ETC

AP1050

Transistor,

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1 APITECH

AP1051

10 TO 1000 MHz TO-8 CASCADABLE AMPLIFIER

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39 ETC

AP1052

TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 10A I(C) | TO-210AC

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16 ETC

AP1053

10 TO 1000 MHz TO-8 CASCADABLE AMPLIFIER

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14 ETC

AP1053

10 TO 1000 MHz TO-8 CASCADABLE AMPLIFIER

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11 ETC

AP1053

Transistor,

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2 APITECH

AP1054

TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 10A I(C) | TO-3

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16 ETC