AP1103 [ETC]

TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 5A I(C) | TO-5 ; 晶体管| BJT | PNP | 120V V( BR ) CEO | 5A I(C ) | TO- 5\n
AP1103
元器件型号: AP1103
生产厂家: ETC    ETC
描述和应用:

TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 5A I(C) | TO-5
晶体管| BJT | PNP | 120V V( BR ) CEO | 5A I(C ) | TO- 5\n

晶体 晶体管
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型号参数:AP1103参数

AP1104

TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 4A I(C) | TO-66

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8 ETC

AP1105

TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 2A I(C) | TO-46

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48 ETC

AP1106

TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 2A I(C) | TO-5

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9 ETC

AP1107

TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 2A I(C) | TO-66

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8 ETC

AP110-79

RF Amplifier

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27 ETC

AP1108

TRANSISTOR | BJT | PNP | 110V V(BR)CEO | 15A I(C) | TO-3

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10 ETC

AP1109

TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 90A I(C) | TO-114

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18 ETC

AP1110

TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 70A I(C) | TO-114

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546 ETC

AP1110

AP1110 is a linear, low current power amplifier in ISM band utilizing InGaP /GaAs HBT process. The AP1110 is well suitable to be used for portable, low current 2.4GHz applications as well as for BT (Bluetooth) Class1 applications. The main features of AP1110 involve 2x2 compact profile; signal gain at 26 dB; typical power of 23dBm and PAE of 40% for BT Class1 under 3.3V. It is housed in a 2 x 2 (mm), 8-pin, and DFN leadless package.

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1036 RFMD

AP1110

朗弗科技股份有限公司(RFIC)是一家通過ISO9001認證,以設計研發與製造各種射頻端通訊系統(手機/手持式裝置/WLAN/基地台)使用的關鍵零組件的Design house,技術團隊是由在高頻元件製程、設計、測試領域上非常知名的專家所組成,每一位均擁有近二十年的RFIC設計相關經驗,同時對通訊世界懷著高度熱忱,並且具備良好的國內外產業關係,致力為RF零組件的技術研發注入新力量。

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323 RFMD

AP1110

Transistor,

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5 APITECH

AP1112

TRANSISTOR | BJT | PNP | 90V V(BR)CEO | 50A I(C) | TO-3

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120 ETC

AP1113

TRANSISTOR | BJT | PNP | 90V V(BR)CEO | 30A I(C) | TO-210AC

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20 ETC

AP1113

Transistor,

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1 APITECH

AP1114

TRANSISTOR | BJT | PNP | 90V V(BR)CEO | 30A I(C) | TO-210AE

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21 ETC