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APT100-101DN [ETC]

TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 11A I(D) | CHIP ; 晶体管| MOSFET | N沟道| 1KV V（ BR ） DSS | 11A I（ D） |芯片\n
APT100-101DN
元器件型号： APT100-101DN
生产厂家： ETC    ETC
描述和应用：

TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 11A I(D) | CHIP
晶体管| MOSFET | N沟道| 1KV V（ BR ） DSS | 11A I（ D） |芯片\n

晶体 晶体管
PDF文件： 总1页 (文件大小：70K)
下载文档：  下载PDF数据表文档文件
型号参数：APT100-101DN参数
 查看货源

APT1001R1AN

 TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-3

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44 ETC

APT1001R1AVR

 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs

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35 ADPOW

APT1001R1BN

 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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106 ADPOW

APT1001R1BN-BUTT

 暂无描述

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-
0 ADPOW

APT1001R1BN-GULLWING

 Power Field-Effect Transistor, 10.5A I(D), 1000V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN

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0 ADPOW

APT1001R1BNR

 TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 10.5A I(D) | TO-247AD

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33 ETC

APT1001R1BNR-GULLWING

 10.5A, 1000V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN

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0 MICROSEMI

APT1001R1BVFR

 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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43 ADPOW

APT1001R1DN

 TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP

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21 ETC

APT1001R1HN

 TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-258ISO

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20 ETC

APT1001R1HVR

 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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32 ADPOW

APT1001R1SN

 TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 10.5A I(D) | TO-263AB

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12 ETC

APT1001R1SN

 10.5A, 1000V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, D3PAK-3

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0 MICROSEMI

APT1001R2AN

 TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9A I(D) | TO-3

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18 ETC

APT1001R2BN

 TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 10A I(D) | TO-247AD

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20 ETC
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