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元器件品牌
APT1002RDN
[ETC]
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP ; 晶体管| MOSFET | N沟道| 1KV V( BR ) DSS |芯片\n
元器件型号:
APT1002RDN
生产厂家:
ETC
描述和应用:
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP
晶体管| MOSFET | N沟道| 1KV V( BR ) DSS |芯片\n
晶体 晶体管
PDF文件:
总4页 (文件大小:387K)
下载文档:
下载PDF数据表文档文件
型号参数:APT1002RDN参数
查看货源
APT10030L2VFR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Warning
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ADPOW
APT10030L2VFR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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12
ADPOW
APT10030L2VFR_04
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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15
ADPOW
APT10030L2VFRG
Power Field-Effect Transistor, 33A I(D), 1000V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264MAX, 3 PIN
Warning
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/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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0
MICROSEMI
APT10030L2VR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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16
ADPOW
APT10030L2VR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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37
ADPOW
APT10030L2VR_04
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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17
ADPOW
APT10030L2VRG
Power Field-Effect Transistor, 33A I(D), 1000V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264MAX, 3 PIN
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
MICROSEMI
APT10035B2FLL
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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13
ADPOW
APT10035B2FLL
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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44
ADPOW
APT10035B2FLL
Power MOS 7is a new generation of low loss, high voltage, N-Channel
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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18
MICROSEMI
APT10035B2FLL_03
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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15
ADPOW
APT10035B2FLLG
Power Field-Effect Transistor, 28A I(D), 1000V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
1
MICROSEMI
APT10035B2LL
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
26
ADPOW
APT10035B2LL
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
26
ADPOW
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