APT10GT60KR [ETC]

TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-220AB ; 晶体管| IGBT | N -CHAN | 600V V( BR ) CES | 20A I(C ) | TO- 220AB\n
APT10GT60KR
元器件型号: APT10GT60KR
生产厂家: ETC    ETC
描述和应用:

TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-220AB
晶体管| IGBT | N -CHAN | 600V V( BR ) CES | 20A I(C ) | TO- 220AB\n

晶体 晶体管 双极性晶体管
PDF文件: 总2页 (文件大小:100K)
下载文档:  下载PDF数据表文档文件
型号参数:APT10GT60KR参数

APT10M07

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
25 ADPOW

APT10M07

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
23 ADPOW

APT10M07JVFR

High Voltage N-Channel enhancement mode power MOSFET

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
46 ADPOW

APT10M07JVFR

High Voltage N-Channel enhancement mode power MOSFET

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
18 ADPOW

APT10M07JVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
74 ADPOW

APT10M09B2VFR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
17 ADPOW

APT10M09B2VFR

POWER MOS V FREDFET

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
31 ADPOW

APT10M09B2VFR_04

POWER MOS V FREDFET

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
15 ADPOW

APT10M09B2VFRG

Power Field-Effect Transistor, 100A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
0 MICROSEMI

APT10M09B2VR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
36 ADPOW

APT10M09LVFR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
12 ADPOW

APT10M09LVFR

POWER MOS V FREDFET

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
34 ADPOW

APT10M09LVFRG

Power Field-Effect Transistor, 100A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
0 MICROSEMI

APT10M09LVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
25 ADPOW

APT10M11B2VFR

High Voltage N-Channel enhancement mode power MOSFET

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
36 ADPOW