APT11GF120BRD [ETC]

Volts:1200V VF/Vce(ON):3V ID(cont):11Amps|Fast IGBT Family ; 电压: 1200V VF /的VCE(on ) : 3V ID(续) : 11安培|快速IGBT系列\n
APT11GF120BRD
元器件型号: APT11GF120BRD
生产厂家: ETC    ETC
描述和应用:

Volts:1200V VF/Vce(ON):3V ID(cont):11Amps|Fast IGBT Family
电压: 1200V VF /的VCE(on ) : 3V ID(续) : 11安培|快速IGBT系列\n

双极性晶体管 栅
PDF文件: 总5页 (文件大小:83K)
下载文档:  下载PDF数据表文档文件
型号参数:APT11GF120BRD参数

APT11GF120BRD1

Insulated Gate Bipolar Transistor, 22A I(C), 1200V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN

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0 ADPOW

APT11GF120BRD1

Insulated Gate Bipolar Transistor

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0 MICROSEMI

APT11GF120BRDQ1

FAST IGBT & FRED

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12 ADPOW

APT11GF120BRDQ1

FAST IGBT & FRED

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25 ADPOW

APT11GF120BRDQ1G

FAST IGBT & FRED

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13 ADPOW

APT11GF120BRDQ1G

FAST IGBT & FRED

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17 ADPOW

APT11GF120KR

FAST IGBT

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45 ADPOW

APT11GF120KRG

Power Semiconductors Power Modules

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18 MICROSEMI

APT11GP60BDQB

POWER MOS 7 IGBT

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14 ADPOW

APT11GP60BDQB

POWER MOS 7 IGBT

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28 ADPOW

APT11GP60BDQB

Insulated Gate Bipolar Transistor, 41A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN

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0 ADPOW

APT11GP60BDQBG

Insulated Gate Bipolar Transistor, 41A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN

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0 MICROSEMI

APT11GP60K

POWER MOS 7 IGBT

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26 ADPOW

APT11GP60K

POWER MOS 7 IGBT

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28 ADPOW

APT11GP60SA

POWER MOS 7 IGBT

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22 ADPOW