关闭背景特效

APT25GP120BD1 [ETC]

Volts:1200V VF/Vce(ON):3.6V ID(cont):25Amps|Ultrafast IGBT Family ; 电压： 1200V VF /的VCE（on ）： 3.6V ID（续）： 25安培|超高速IGBT系列\n

APT25GP120BD1


元器件型号：	APT25GP120BD1
生产厂家：	ETC
描述和应用：	Volts:1200V VF/Vce(ON):3.6V ID(cont):25Amps\|Ultrafast IGBT Family 电压： 1200V VF /的VCE（on ）： 3.6V ID（续）： 25安培\|超高速IGBT系列\n 晶体晶体管功率控制瞄准线双极性晶体管栅局域网
PDF文件：	总7页 (文件大小：91K)
下载文档：	下载PDF数据表文档文件
型号参数：APT25GP120BD1参数

APT25GP120BDF1

Insulated Gate Bipolar Transistor, 69A I(C), 1200V V(BR)CES, N-Channel

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1 MICROSEMI

APT25GP120BDQ1

POWER MOS 7 IGBT

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54 ADPOW

APT25GP120BDQ1G

POWER MOS 7 IGBT

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64 ADPOW

APT25GP120BDQ1G

Power Semiconductors Power Modules

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22 MICROSEMI

APT25GP120BG

Power Semiconductors Power Modules

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25 MICROSEMI

APT25GP90B

POWER MOS 7 IGBT

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26 ADPOW

APT25GP90B

POWER MOS 7 IGBT

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35 ADPOW

APT25GP90BDF1

POWER MOS 7 IGBT

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83 ADPOW

APT25GP90BDQ1

POWER MOS 7 IGBT

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51 ADPOW

APT25GP90BDQ1

POWER MOS 7 IGBT

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20 ADPOW

APT25GP90BDQ1G

POWER MOS 7 IGBT

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16 ADPOW

APT25GP90BDQ1G

POWER MOS 7 IGBT

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64 ADPOW

APT25GP90BG

Insulated Gate Bipolar Transistor, 72A I(C), 900V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN

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0 MICROSEMI

APT25GR120B

Power Semiconductors Power Modules

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13 MICROSEMI

APT25GR120B

Power Semiconductors Power Modules RF Power MOSFETs

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5 MICROSEMI

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