APT40-101DN [ETC]

TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 25A I(D) | CHIP ; 晶体管| MOSFET | N沟道| 400V V( BR ) DSS | 25A I( D) |芯片\n
APT40-101DN
型号: APT40-101DN
厂家: ETC    ETC
描述:

TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 25A I(D) | CHIP
晶体管| MOSFET | N沟道| 400V V( BR ) DSS | 25A I( D) |芯片\n

晶体 晶体管
文件: 总1页 (文件大小:70K)
下载:  下载PDF数据表文档文件

APT4012BVFR

POWER MOS V FREDFET

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43 ADPOW

APT4012BVFRG

Power Field-Effect Transistor, 37A I(D), 400V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN

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0 MICROSEMI

APT4012BVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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53 ADPOW

APT4012SVFR

POWER MOS V FREDFET

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23 ADPOW

APT4012SVFRG

Power Field-Effect Transistor, 37A I(D), 400V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3

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0 MICROSEMI

APT4014BVFR

POWER MOS V FREDFET

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34 ADPOW

APT4014BVFRG

Power Field-Effect Transistor, 28A I(D), 400V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN

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0 MICROSEMI

APT4014BVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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30 ADPOW

APT4014HVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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24 ADPOW

APT4014SVFR

POWER MOS V FREDFET

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26 ADPOW

APT4015AVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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28 ADPOW

APT4015AVR

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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0 MICROSEMI

APT4016BN

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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32 ADPOW

APT4016BN-BUTT

暂无描述

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0 ADPOW

APT4016BN-GULLWING

Power Field-Effect Transistor, 31A I(D), 400V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN

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0 ADPOW