APT601R6BNR [ETC]
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 7.5A I(D) | TO-247AD ; 晶体管| MOSFET | N沟道| 600V V( BR ) DSS | 7.5AI (D ) | TO- 247AD\n型号: | APT601R6BNR |
厂家: | ETC |
描述: | TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 7.5A I(D) | TO-247AD
|
文件: | 总2页 (文件大小:68K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Powered by ICminer.com Electronic-Library Service CopyRight 2003
Powered by ICminer.com Electronic-Library Service CopyRight 2003
相关型号:
APT601R6KN
Power Field-Effect Transistor, 5.8A I(D), 600V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
ADPOW
APT6020B2VFRG
Power Field-Effect Transistor, 30A I(D), 600V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3
MICROSEMI
APT6020LVFRG
Power Field-Effect Transistor, 30A I(D), 600V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN
MICROSEMI
APT6020LVR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
ADPOW
APT6020LVR
Power Field-Effect Transistor, 30A I(D), 600V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN
MICROSEMI
APT6020LVRG
Power Field-Effect Transistor, 30A I(D), 600V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN
MICROSEMI
APT6021BFLL
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
ADPOW
©2020 ICPDF网 联系我们和版权申明