APT904R2BN [ETC]
TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 4A I(D) | TO-247AD ; 晶体管| MOSFET | N沟道| 900V V( BR ) DSS | 4A I( D) | TO- 247AD\n![APT904R2BN](http://pdffile.icpdf.com/pdf1/p00001/img/icpdf/APT90_1699_icpdf.jpg)
型号: | APT904R2BN |
厂家: | ![]() |
描述: | TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 4A I(D) | TO-247AD
|
文件: | 总2页 (文件大小:112K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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相关型号:
![](http://pdffile.icpdf.com/pdf2/p00229/img/page/APT1004RBN-B_1342211_files/APT1004RBN-B_1342211_1.jpg)
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APT904R2BN-BUTT
Power Field-Effect Transistor, 4A I(D), 900V, 4.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
MICROSEMI
![](http://pdffile.icpdf.com/pdf2/p00229/img/page/APT1004RBN-B_1342211_files/APT1004RBN-B_1342211_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00229/img/page/APT1004RBN-B_1342211_files/APT1004RBN-B_1342211_2.jpg)
APT904RBN-BUTT
Power Field-Effect Transistor, 4.4A I(D), 900V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
MICROSEMI
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