AS7C3256-12PC [ETC]
x8 SRAM ; X8 SRAM\n
ETC 
September 2001
AS7C256
AS7C3256
®
5V/ 3.3V 32K X 8 CMOS SRAM (Common I/ O)
Features
• AS7C256 (5V version)
• Very low power consumption: STANDBY
- 22 mW (AS7C256) / max CMOS I/ O
- 7.2 mW (AS7C3256) / max CMOS I/ O
• Easy memory expansion with CE and OE inputs
• TTL-compatible, three-state I/ O
• 28-pin JEDEC standard packages
- 300 mil PDIP
- 300 mil SOJ
- 8 × 13.4 mm TSOP 1
• ESD protection ≥ 2000 volts
• Latch-up current ≥ 200 mA
• AS7C3256 (3.3V version)
• Industrial and commercial temperature
• Organization: 32,768 words × 8 bits
• High speed
- 12/ 15/ 20 ns address access time
- 6, 7, 8 ns output enable access time
• Very low power consumption: ACTIVE
- 660mW (AS7C256) / max @ 12 ns
- 216mW (AS7C3256) / max @ 12 ns
Logic block diagram
Pin arrangement
28-pin TSOP 1 (8×13.4 mm)
V
28-pin DIP, SOJ (300 mil)
CC
GND
Input buffer
A14
A12
A7
A6
ꢀꢈ
1
2
3
4
5
6
7
8
28
27
26
25
24
23
22
21
20
19
18
V
CC
WE
A13
ꢀꢁ
OE
A11
A9
1
A10
CE
(22)
(23)
(24)
(25)
(26)
(27)
(28)
(1)
(21) 28
(20) 27
(19) 26
(18) 25
(17) 24
(16) 23
(15) 22
(14) 21
(13) 20
(12) 19
(11) 18
(10) 17
(9) 16
(8) 15
2
3
I/ O7
I/ O6
I/ O5
I/ O4
I/ O3
GND
I/ O2
I/ O1
I/ O0
A0
A0
A1
A8
4
I/ O7
I/ O0
A13
WE
5
ꢀꢂ
6
A2
A3
256 X 128 X 8
Array
A4
A3
A2
A1
A11
OE
A10
CE
I/ O7
ꢃꢄꢅꢆ
I/ O5
I/ O4
ꢃꢄꢅꢇ
V
7
CC
AS7C256
AS7C3256
8
A14
A12
A7
9
(2)
A4
10
11
12
13
14
(3)
9
(4)
(262,144)
A6
A5
(5)
A5
A0
10
11
12
13
14
A6
(6)
A4
A1
A2
I/ O0
ꢃꢄꢅꢉ
ꢃꢄꢅꢊ
GND
(7)
A3
A14
17
16
15
Note: This part is compatible with both pin numbering
conventions used by various manufacturers.
WE
OE
CE
Column decoder
Control
circuit
A
7
A
8
A
9
A A A A
10 11 12 13
Selection guide
-12
12
6
-15
15
7
-20
20
8
Unit
ns
Maximum address access time
Maximum output enable access time
ns
AS7C256
120
60
4
115
55
4
110
50
4
mA
mA
mA
mA
Maximum operating current
AS7C3256
AS7C256
AS7C3256
Maximum CMOS standby current
2
2
2
9/ 18/ 01; v.1.6
Alliance Semiconductor
P. 1 of 9
Copyright © Alliance Semiconductor. All rights reserved.
AS7C256
AS7C3256
®
Functional description
The AS7C(3)256 is a 5V/ 3.3V high-performance CMOS 262,144-bit Static Random-Access Memory (SRAM) device organized
as 32,768 words × 8 bits. It is designed for memory applications requiring fast data access at low voltage, including
TM
TM
Pentium , PowerPC , and portable computing. Alliance’s advanced circuit design and process techniques permit 3.3V
operation without sacrificing performance or operating margins.
The device enters standby mode when CE is high. CMOS standby mode consumes ≤3.6 mW. Normal operation offers 75% power
reduction after initial access, resulting in significant power savings during CPU idle, suspend, and stretch mode.
Equal address access and cycle times (t , t , t ) of 12/ 15/ 20 ns with output enable access times (t ) of 6, 7, 8 ns are
AA RC WC
OE
ideal for high-performance applications. The chip enable (CE) input permits easy memory expansion with multiple-bank
memory organizations.
A write cycle is accomplished by asserting chip enable (CE) and write enable (WE) LOW. Data on the input pins I/ O0-I/ O7 is
written on the rising edge of WE (write cycle 1) or CE (write cycle 2). To avoid bus contention, external devices should drive
I/ O pins only after outputs have been disabled with output enable (OE) or write enable (WE).
A read cycle is accomplished by asserting chip enable (CE) and output enable (OE) LOW, with write enable (WE) high. The
chip drives I/ O pins with the data word referenced by the input address. When chip enable or output enable is high, or write
enable is low, output drivers stay in high-impedance mode.
All chip inputs and outputs are TTL-compatible and 5V tolerant. Operation is from a single 3.3±0.3V supply. The
AS7C(3)256A is packaged in high volume industry standard packages.
Absolute maximum ratings
Parameter
Device
Symbol
Min
–0.5
–0.5
–0.5
–
Max
+7.0
+5.0
Unit
V
AS7C256
AS7C3256
V
t1
Voltage on V relative to GND
CC
V
V
t1
Voltage on any pin relative to GND
Power dissipation
V
V
+ 0.5
V
t2
CC
P
1.0
+150
+125
20
W
D
o
Storage temperature (plastic)
T
–65
–55
–
C
stg
o
Ambient temperature with V applied
T
C
CC
bias
DC current into outputs (low)
I
mA
OUT
Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute max-
imum rating conditions for extended periods may affect reliability.
Truth table
CE
H
L
WE
X
OE
X
Data
Mode
Standby (I , I
High Z
High Z
)
SB SB1
H
H
Output disable (I )
CC
L
H
L
D
Read (I )
CC
OUT
L
L
X
D
Write (I )
CC
IN
Key: X = Don’t care, L = Low, H = High
9/ 18/ 01; v.1.6
Alliance Semiconductor
P. 2 of 9
AS7C256
AS7C3256
®
Recommended operating conditions
Parameter
Device
Symbol
Min
4.5
3.0
2.2
2.0
Typical
Max
5.5
Unit
V
AS7C256
AS7C3256
AS7C256
AS7C3256
—
V
5.0
3.3
–
CC
Supply voltage
V
3.6
V
CC
V
V +0.5
V
V
V
IH
CC
Input voltage
V
–
V +0.5
IH
CC
*
*
V
-0.5
0
–
0.8
70
85
IL
o
commercial
industrial
T
–
C
C
A
Ambient operating temperature
o
T
–40
–
A
*
V
min = –2.0V for pulse width less than t / 2.
RC
IL
DC operating characteristics (over the operating range)ꢀ
-12
-15
-20
Parameter
Sym Test conditions
Device
Both
Min
–
Max
Min
Max
1
Min
–
Max Unit
Input leakage
current
V
= Max,
CC
|I |
1
1
–
–
1
1
µA
µA
LI
V = GND to V
in
CC
Output leakage
current
V
= Max,
= GND to V
CC
|I
|
–
1
–
Both
LO
V
OUT
CC
Operating
power supply
current
AS7C256
–
–
120
60
–
–
115
55
–
–
110
50
V
= Max, CE ≤ V
CC
IL
I
mA
mA
mA
CC
f = f , I
= 0mA
AS7C3256
Max OUT
AS7C256
AS7C3256
AS7C256
–
–
–
40
20
–
–
–
35
20
–
–
–
30
20
V
= Max, CE ≤ V
CC
IL
I
SB
f = f , I
= 0mA
Max OUT
Standby power
supply current
4.0
4.0
4.0
V
= Max, CE > V –0.2V
CC
CC
I
V
< GND + 0.2V or
SB1
IN
AS7C3256
–
2.0
–
2.0
–
2.0
V
> V –0.2V, f = 0
IN
CC
V
I
= 8 mA, V = Min
Both
Both
–
0.4
–
–
0.4
–
–
0.4
–
V
V
OL OL
CC
Output voltage
V
I
= –4 mA, V = Min
2.4
2.4
2.4
OH OH
CC
Capacitance (f = 1MHz, T = room temperature, V = NOMINAL)ꢁ
a
CC
Signals
Parameter
Symbol
Test conditions
Max
Unit
Input capacitance
I/ O capacitance
C
V = 0V
5
7
pF
pF
A, CE
, WE, OE
IN
in
C
I/ O
V = V = 0V
in out
I/ O
9/ 18/ 01; v.1.6
Alliance Semiconductor
P. 3 of 9
AS7C256
AS7C3256
®
Read cycle (over the operating range)ꢂꢃꢄ
-12
-15
-20
Parameter
Symbol
Min
12
–
Max
Min
15
–
Max
–
Min
20
–
Max
–
Unit Notes
ns
Read cycle time
t
t
t
t
t
t
t
t
t
t
t
–
12
12
6
RC
Address access time
15
15
7
20
20
8
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
3
3
AA
–
–
–
Chip enable (CE) access time
Output enable (OE) access time
Output hold from address change
CE LOW to output in low Z
CE HIGH to output in high Z
OE LOW to output in low Z
OE HIGH to output in high Z
Power up time
ACE
OE
–
–
–
3
–
3
–
3
–
5
OH
CLZ
CHZ
OLZ
OHZ
PU
3
–
3
–
3
–
4, 5
4, 5
4, 5
4, 5
4, 5
4, 5
–
3
–
4
–
5
0
–
0
–
0
–
–
3
–
4
–
5
0
–
0
–
0
–
Power down time
–
12
–
15
–
20
PD
Key to switching waveforms
ꢜꢐꢝꢐꢌꢛꢑꢐꢌꢕꢓꢔ
ꢙꢗꢚꢚꢐꢌꢛꢑꢐꢌꢕꢓꢔ
ꢋꢌꢍꢎꢏꢐꢌꢎꢍꢑꢒꢓꢔꢕꢓꢔꢄꢍꢒꢌRꢔꢑꢖꢗꢘꢎ
Read waveform 1 (address controlled)ꢂꢃꢅꢃꢆꢃꢄ
t
ꢜ!
Address
ꢔꢀꢀ
t
ꢅ
D
Data valid
ꢒꢓꢔ
Read waveform 2 (CE controlled)ꢂꢃꢅꢃꢇꢃꢄ
ꢉ
t
ꢜ!
ꢀꢁ
t
ꢅ"
ꢂꢁ
t
t
ꢅ#$
ꢅ $
t
! $
t
ꢀ!"
D
ꢒꢓꢔ
Data valid
t
!#$
t
%&
I
!!
t
%ꢋ
I
Supply
current
'(
50%
50%
9/ 18/ 01; v.1.6
Alliance Semiconductor
P. 4 of 9
AS7C256
AS7C3256
®
Write cycle (over the operating range)ꢀꢀ
-12
-15
-20
Parameter
Symbol
Min
12
8
Max
–
Min
15
10
10
0
Max
–
Min
20
12
12
0
Max
–
Unit
Notes
Write cycle time
t
t
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
WC
CW
Chip enable to write end
Address setup to write end
Address setup time
–
–
–
t
8
–
–
–
AW
t
0
–
–
–
AS
WP
WR
Write pulse width
t
8
–
9
–
12
0
–
Write recovery time
t
t
0
–
0
–
–
Address hold from end of write
Data valid to write end
Data hold time
t
0
–
0
–
0
–
AH
6
–
8
–
10
0
–
DW
t
0
–
0
–
–
4, 5
4, 5
4, 5
DH
WZ
OW
Write enable to output in high Z
Output active from write end
t
–
5
–
5
–
5
t
3
–
3
–
3
–
Write waveform 1 (WE controlled)ꢀꢈꢃꢀꢀ
t
)!
t
t
ꢀ)
ꢀ
Address
t
t
)ꢜ
)%
ꢃꢁ
t
ꢀ'
t
t
&
&)
D
Data valid
ꢐꢌ
t
t
)$
ꢅ)
D
ꢒꢓꢔ
Write waveform 2 (CE controlled)ꢀꢈꢃꢀꢀ
t
)!
t
t
ꢀ
ꢀ)
Address
t
)ꢜ
t
t
!)
ꢀ'
ꢀꢁ
t
)%
ꢃꢁ
t
t
t
)$
&)
&
D
Data valid
ꢐꢌ
D
ꢒꢓꢔ
9/ 18/ 01; v.1.6
Alliance Semiconductor
P. 5 of 9
AS7C256
AS7C3256
®
AC test conditions
- Output load: see Figure B or Figure C.
- Input pulse level: GND to 3.0V. See Figure A.
- Input rise and fall times: 2 ns. See Figure A.
- Input and output timing reference levels: 1.5V.
Thevenin equivalent
168
Ω
D
+1.72V (5V and 3.3V)
ꢒꢓꢔ
+3.3V
+5V
480
320
Ω
Ω
D
D
ꢒꢓꢔ
ꢒꢓꢔ
+3.0V
90%
10%
90%
10%
350
Ω
C(14)
GND
255
Ω
C(14)
GND
2 ns
Figure A: Input pulse
GND
Figure C: Output load
Figure B: Output loꢗꢍ
Notes
1
2
3
4
5
6
7
8
9
During V power-up, a pull-up resistor to V on CE is required to meet I specification.
CC CC SB
This parameter is sampled, but not 100% tested.
For test conditions, see AC Test Conditions, Figures A, B, C.
These parameters are specified with CL = 5pF, as in Figures B or C. Transition is measured ±500mV from steady-state voltage.
This parameter is guaranteed, but not tested.
WE is High for read cycle.
CE and OE are Low for read cycle.
Address valid prior to or coincident with CE transition Low.
All read cycle timings are referenced from the last valid address to the first transitioning address.
10 CE or WE must be High during address transitions. Either CE or WE asserting high terminates a write cycle.
11 All write cycle timings are referenced from the last valid address to the first transitioning address.
12 CE1 and CE2 have identical timing.
13 C=30pF, except on High Z and Low Z parameters, where C=5pF.
9/ 18/ 01; v.1.6
Alliance Semiconductor
P. 6 of 9
AS7C256
AS7C3256
®
Typical DC and AC characteristics
Normalized supply current I , I
Normalized supply current I , I
CC SB
Normalized supply current ISB1
vs. ambient temperature T
CC SB
vs. supply voltage V
CC
vs. ambient temperature T
a
a
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
625
25
I
V
= V (NOMINAL)
I
CC
CC CC
CC
5
1
I
I
SB
SB
0.2
0.04
MIN
NOMINAL
–55
–10
35
80
-55
-10
35
80
MAX
125
125
Supply voltage (V)
Ambient temperature (°C)
Ambient temperature (°C)
Normalized supply current I
CC
Normalized access time t
Normalized access time t
AA
AA
vs. ambient temperature T
vs. supply voltage V
vs. cycle frequency 1/ t , 1/ t
RC WC
CC
a
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
T = 25°C
V
= V (NOMINAL)
V
= V (NOMINAL)
CC
a
CC CC
CC
T = 25°C
a
MIN
NOMINAL
–55
–10
35
80
0
25
50
75
MAX
125
100
Supply voltage (V)
Ambient temperature (°C)
Cycle frequency (MHz)
Output source current I
Output sink current I
OL
Typical access time change ∆t
OH
AA
vs. output voltage V
vs. output voltage V
OL
vs. output capacitive loading
OH
140
120
100
80
140
120
100
80
35
30
25
20
15
10
5
V
= V (NOMINAL)PL
CC
V
= V (NOMINAL)
CC
V = V
CC CC(NOMINAL)
CC
CC
T = 25°C
T = 25°C
a
a
60
60
40
40
20
20
0
0
0
0
0
0
250
500
750
V
V
1000
CC
CC
Output voltage (V)
Output voltage (V)
Capacitance (pF)
9/ 18/ 01; v.1.6
Alliance Semiconductor
P. 7 of 9
AS7C256
AS7C3256
®
Package diagrams
28-pin PDIP
Min
Max
A
in mils
D
B
S
-
0.175
A
A1
B
b
c
D
E
0.010
0.058
0.016
0.008
-
-
E
E1
α
c
L
0.064
0.022
0.014
1.400
0.320
0.298
A1
eA
e
b
Seating
Plane
Pin 1
0.295
0.278
E1
e
0.100 BSC
0.330
0.120
0°
0.370
0.140
15°
eA
L
a
-
0.055
S
ꢁ
ꢀ
ꢉ
28-pin SOJ
ꢊ
ꢊꢃ
ꢂꢃ ꢂꢋ
Min
Max
Seating
Plane
in mils
ꢈ
-
0.140
A
A1
A2
B
ꢄꢅꢆꢇꢃ
ꢌ
0.025
0.095
-
ꢊꢋ
0.105
0.028 TYP
ꢂ
0.018 TYP
0.010 TYP
b
c
-
0.730
0.285
0.305
0.347
D
E
E1
E2
e
0.245
0.295
0.327
e
b
c
0.050 BSC
A2
A
A1
L
28-pin
8×13.4 mm
pin 1(22)
pin 1(7)
pin 8(21)
pin 5(8)
Min
–
Max
1.20
D
Hd
A
A1
A2
b
c
D
e
α
0.10
0.95
0.15
0.10
11.60
0.20
1.05
0.25
0.20
28-pin
11.80
Note: This part is compatible with both pin numbering
conventions used by various manufacturers.
0.55 nominal
8.0 nominal
E
E
13.30
13.50
0.70
5°
Hd
L
α
0.50
0°
9/ 18/ 01; v.1.6
Alliance Semiconductor
P. 8 of 9
AS7C256
AS7C3256
®
Ordering information
Package / Access time
Volt/ Temp
5V commercial
3.3V commercial
5V commercial
3.3V commercial
5V industrial
12 ns
15 ns
20 ns
AS7C256-12PC
AS7C3256-12PC
AS7C256-12JC
AS7C3256-12JC
AS7C256-12JI
AS7C3256-12JI
AS7C256-12TC
AS7C256-15PC
AS7C3256-15PC
AS7C256-15JC
AS7C3256-15JC
AS7C256-15JI
AS7C3256-15JI
AS7C256-15TC
AS7C3256-15TC
AS7C256-15TI
AS7C3256-15TI
AS7C256-20PC
Plastic DIP, 300 mil
AS7C3256-20PC
AS7C256-20JC
AS7C3256-20JC
AS7C256-20JI
Plastic SOJ, 300 mil
3.3V industrial
5V commercial
3.3V commercial
5V industrial
AS7C3256-20JI
AS7C256-20TC
AS7C3256-20TC
AS7C256-20TI
AS7C3256-20TI
AS7C3256-12TC
AS7C256-12TI
AS7C3256-12TI
TSOP 8x13.4mm
3.3V industrial
Part numbering system
AS7C
3
256
–XX
X
C or I
Temperature range:
C = 0 C to 70 C
I = -40C to 85C
Packages:
P = PDIP 300 mil
J = SOJ 300 mil
Voltage:
3 = 3.3V supply
5 = 5V supply
o
0
SRAM prefix
Device number Access time
T = TSOP 8x13.4mm
9/ 18/ 01; v.1.6
Alliance Semiconductor
P. 9 of 9
ꢞꢑ!ꢒꢕ+ꢘꢐꢛ,ꢔꢑꢀꢚꢚꢐꢗꢌꢖꢎꢑ'ꢎ-ꢐꢖꢒꢌꢍꢓꢖꢔꢒꢘꢑ!ꢒꢘꢕꢒꢘꢗꢔꢐꢒꢌ.ꢑꢀꢚꢚꢑꢘꢐꢛ,ꢔꢝꢑꢘꢎꢝꢎꢘ/ꢎꢍ.ꢑꢅꢓꢘꢑꢔ,ꢘꢎꢎ0ꢕꢒꢐꢌꢔꢑꢚꢒꢛꢒ1ꢑꢒꢓꢘꢑꢌꢗ-ꢎꢑꢗꢌꢍꢑꢃꢌꢔꢎꢚꢚꢐ2ꢗꢔꢔꢑꢗꢘꢎꢑꢔꢘꢗꢍꢎ-ꢗꢘ3ꢝꢑꢒꢘꢑꢘꢎꢛꢐꢝꢔꢎꢘꢎꢍꢑꢔꢘꢗꢍꢎ-ꢗꢘ3ꢝꢑꢒꢏꢑꢀꢚꢚꢐꢗꢌꢖꢎ.ꢑꢀꢚꢚꢑꢒꢔ,ꢎꢘꢑ4ꢘꢗꢌꢍꢑꢗꢌꢍꢑꢕꢘꢒꢍꢓꢖꢔꢑꢌꢗ-ꢎꢝꢑ-ꢗ+ꢑ4ꢎꢑꢔ,ꢎꢑꢔꢘꢗꢍꢎ0
-ꢗꢘ3ꢝꢑꢒꢏꢑꢔ,ꢎꢐꢘꢑꢘꢎꢝꢕꢎꢖꢔꢐ/ꢎꢑꢖꢒ-ꢕꢗꢌꢐꢎꢝ.ꢑꢀꢚꢚꢐꢗꢌꢖꢎꢑꢘꢎꢝꢎꢘ/ꢎꢝꢑꢔ,ꢎꢑꢘꢐꢛ,ꢔꢑꢔꢒꢑ-ꢗ3ꢎꢑꢖ,ꢗꢌꢛꢎꢝꢑꢔꢒꢑꢔ,ꢐꢝꢑꢍꢒꢖꢓ-ꢎꢌꢔꢑꢗꢌꢍꢑꢐꢔꢝꢑꢕꢘꢒꢍꢓꢖꢔꢝꢑꢗꢔꢑꢗꢌ+ꢑꢔꢐ-ꢎꢑ2ꢐꢔ,ꢒꢓꢔꢑꢌꢒꢔꢐꢖꢎ.ꢑꢀꢚꢚꢐꢗꢌꢖꢎꢑꢗꢝꢝꢓ-ꢎꢝꢑꢌꢒꢑꢘꢎꢝꢕꢒꢌꢝꢐ4ꢐꢚꢐꢔ+ꢑꢏꢒꢘꢑꢗꢌ+ꢑꢎꢘꢘꢒꢘꢝꢑꢔ,ꢗꢔꢑ-ꢗ+ꢑꢗꢕꢕꢎꢗꢘꢑꢐꢌꢑꢔ,ꢐꢝꢑꢍꢒꢖꢓ-ꢎꢌꢔ.
5,ꢎꢑꢍꢗꢔꢗꢑꢖꢒꢌꢔꢗꢐꢌꢎꢍꢑ,ꢎꢘꢎꢐꢌꢑꢘꢎꢕꢘꢎꢝꢎꢌꢔꢝꢑꢀꢚꢚꢐꢗꢌꢖꢎRꢝꢑ4ꢎꢝꢔꢑꢍꢗꢔꢗꢑꢗꢌꢍꢄꢒꢘꢑꢎꢝꢔꢐ-ꢗꢔꢎꢝꢑꢗꢔꢑꢔ,ꢎꢑꢔꢐ-ꢎꢑꢒꢏꢑꢐꢝꢝꢓꢗꢌꢖꢎ.ꢑꢀꢚꢚꢐꢗꢌꢖꢎꢑꢘꢎꢝꢎꢘ/ꢎꢝꢑꢔ,ꢎꢑꢘꢐꢛ,ꢔꢑꢔꢒꢑꢖ,ꢗꢌꢛꢎꢑꢒꢘꢑꢖꢒꢘꢘꢎꢖꢔꢑꢔ,ꢐꢝꢑꢍꢗꢔꢗꢑꢗꢔꢑꢗꢌ+ꢑꢔꢐ-ꢎ1ꢑ2ꢐꢔ,ꢒꢓꢔꢑꢌꢒꢔꢐꢖꢎ.ꢑꢃꢏꢑꢔ,ꢎꢑꢕꢘꢒꢍꢓꢖꢔꢑꢍꢎꢝꢖꢘꢐ4ꢎꢍꢑ,ꢎꢘꢎꢐꢌꢑꢐꢝꢑꢓꢌꢍꢎꢘ
ꢍꢎ/ꢎꢚꢒꢕ-ꢎꢌꢔ1ꢑꢝꢐꢛꢌꢐꢏꢐꢖꢗꢌꢔꢑꢖ,ꢗꢌꢛꢎꢝꢑꢔꢒꢑꢔ,ꢎꢝꢎꢑꢝꢕꢎꢖꢐꢏꢐꢖꢗꢔꢐꢒꢌꢝꢑꢗꢘꢎꢑꢕꢒꢝꢝꢐ4ꢚꢎ.ꢑ5,ꢎꢑꢐꢌꢏꢒꢘ-ꢗꢔꢐꢒꢌꢑꢐꢌꢑꢔ,ꢐꢝꢑꢕꢘꢒꢍꢓꢖꢔꢑꢍꢗꢔꢗꢑꢝ,ꢎꢎꢔꢑꢐꢝꢑꢐꢌꢔꢎꢌꢍꢎꢍꢑꢔꢒꢑ4ꢎꢑꢛꢎꢌꢎꢘꢗꢚꢑꢍꢎꢝꢖꢘꢐꢕꢔꢐ/ꢎꢑꢐꢌꢏꢒꢘ-ꢗꢔꢐꢒꢌꢑꢏꢒꢘꢑꢕꢒꢔꢎꢌꢔꢐꢗꢚꢑꢖꢓꢝꢔꢒ-ꢎꢘꢝꢑꢗꢌꢍꢑꢓꢝꢎꢘꢝ1ꢑꢗꢌꢍꢑꢐꢝꢑꢌꢒꢔꢑꢐꢌꢔꢎꢌꢍꢎꢍꢑꢔꢒꢑꢒꢕꢎꢘꢗꢔꢎ
ꢗꢝ1ꢑꢒꢘꢑꢕꢘꢒ/ꢐꢍꢎ1ꢑꢗꢌ+ꢑꢛꢓꢗꢘꢗꢌꢔꢎꢎꢑꢒꢘꢑ2ꢗꢘꢘꢗꢌꢔꢎꢎꢑꢔꢒꢑꢗꢌ+ꢑꢓꢝꢎꢘꢑꢒꢘꢑꢖꢓꢝꢔꢒ-ꢎꢘ.ꢑꢀꢚꢚꢐꢗꢌꢖꢎꢑꢍꢒꢎꢝꢑꢌꢒꢔꢑꢗꢝꢝꢓ-ꢎꢑꢗꢌ+ꢑꢘꢎꢝꢕꢒꢌꢝꢐ4ꢐꢚꢐꢔ+ꢑꢒꢘꢑꢚꢐꢗ4ꢐꢚꢐꢔ+ꢑꢗꢘꢐꢝꢐꢌꢛꢑꢒꢓꢔꢑꢒꢏꢑꢔ,ꢎꢑꢗꢕꢕꢚꢐꢖꢗꢔꢐꢒꢌꢑꢒꢘꢑꢓꢝꢎꢑꢒꢏꢑꢗꢌ+ꢑꢕꢘꢒꢍꢓꢖꢔꢑꢍꢎꢝꢖꢘꢐ4ꢎꢍꢑ,ꢎꢘꢎꢐꢌ1ꢑꢗꢌꢍꢑꢍꢐꢝꢖꢚꢗꢐ-ꢝꢑꢗꢌ+ꢑꢎ6ꢕꢘꢎꢝꢝꢑꢒꢘ
ꢐ-ꢕꢚꢐꢎꢍꢑ2ꢗꢘꢘꢗꢌꢔꢐꢎꢝꢑꢘꢎꢚꢗꢔꢎꢍꢑꢔꢒꢑꢔ,ꢎꢑꢝꢗꢚꢎꢑꢗꢌꢍꢄꢒꢘꢑꢓꢝꢎꢑꢒꢏꢑꢀꢚꢚꢐꢗꢌꢖꢎꢑꢕꢘꢒꢍꢓꢖꢔꢝꢑꢐꢌꢖꢚꢓꢍꢐꢌꢛꢑꢚꢐꢗ4ꢐꢚꢐꢔ+ꢑꢒꢘꢑ2ꢗꢘꢘꢗꢌꢔꢐꢎꢝꢑꢘꢎꢚꢗꢔꢎꢍꢑꢔꢒꢑꢏꢐꢔꢌꢎꢝꢝꢑꢏꢒꢘꢑꢗꢑꢕꢗꢘꢔꢐꢖꢓꢚꢗꢘꢑꢕꢓꢘꢕꢒꢝꢎ1ꢑ-ꢎꢘꢖ,ꢗꢌꢔꢗ4ꢐꢚꢐꢔ+1ꢑꢒꢘꢑꢐꢌꢏꢘꢐꢌꢛꢎ-ꢎꢌꢔꢑꢒꢏꢑꢗꢌ+ꢑꢐꢌꢔꢎꢚꢚꢎꢖꢔꢓꢗꢚꢑꢕꢘꢒꢕꢎꢘꢔ+ꢑꢘꢐꢛ,ꢔꢝ1ꢑꢎ6ꢖꢎꢕꢔꢑꢗꢝ
ꢎ6ꢕꢘꢎꢝꢝꢑꢗꢛꢘꢎꢎꢍꢑꢔꢒꢑꢐꢌꢑꢀꢚꢚꢐꢗꢌꢖꢎRꢝꢑ5ꢎꢘ-ꢝꢑꢗꢌꢍꢑ!ꢒꢌꢍꢐꢔꢐꢒꢌꢝꢑꢒꢏꢑ'ꢗꢚꢎꢑ72,ꢐꢖ,ꢑꢗꢘꢎꢑꢗ/ꢗꢐꢚꢗ4ꢚꢎꢑꢏꢘꢒ-ꢑꢀꢚꢚꢐꢗꢌꢖꢎ8.ꢑꢀꢚꢚꢑꢝꢗꢚꢎꢝꢑꢒꢏꢑꢀꢚꢚꢐꢗꢌꢖꢎꢑꢕꢘꢒꢍꢓꢖꢔꢝꢑꢗꢘꢎꢑ-ꢗꢍꢎꢑꢎ6ꢖꢚꢓꢝꢐ/ꢎꢚ+ꢑꢗꢖꢖꢒꢘꢍꢐꢌꢛꢑꢔꢒꢑꢀꢚꢚꢐꢗꢌꢖꢎRꢝꢑ5ꢎꢘ-ꢝꢑꢗꢌꢍꢑ!ꢒꢌꢍꢐꢔꢐꢒꢌꢝꢑꢒꢏꢑ'ꢗꢚꢎ.ꢑ5,ꢎꢑꢕꢓꢘꢖ,ꢗꢝꢎꢑꢒꢏ
ꢕꢘꢒꢍꢓꢖꢔꢝꢑꢏꢘꢒ-ꢑꢀꢚꢚꢐꢗꢌꢖꢎꢑꢍꢒꢎꢝꢑꢌꢒꢔꢑꢖꢒꢌ/ꢎ+ꢑꢗꢑꢚꢐꢖꢎꢌꢝꢎꢑꢓꢌꢍꢎꢘꢑꢗꢌ+ꢑꢕꢗꢔꢎꢌꢔꢑꢘꢐꢛ,ꢔꢝ1ꢑꢖꢒꢕ+ꢘꢐꢛ,ꢔꢝ1ꢑ-ꢗꢝ3ꢑ2ꢒꢘ3ꢝꢑꢘꢐꢛ,ꢔꢝ1ꢑꢔꢘꢗꢍꢎ-ꢗꢘ3ꢝ1ꢑꢒꢘꢑꢗꢌ+ꢑꢒꢔ,ꢎꢘꢑꢐꢌꢔꢎꢚꢚꢎꢖꢔꢓꢗꢚꢑꢕꢘꢒꢕꢎꢘꢔ+ꢑꢘꢐꢛ,ꢔꢝꢑꢒꢏꢑꢀꢚꢚꢐꢗꢌꢖꢎꢑꢒꢘꢑꢔ,ꢐꢘꢍꢑꢕꢗꢘꢔꢐꢎꢝ.ꢑꢀꢚꢚꢐꢗꢌꢖꢎꢑꢍꢒꢎꢝꢑꢌꢒꢔꢑꢗꢓꢔ,ꢒꢘꢐ9ꢎꢑꢐꢔꢝꢑꢕꢘꢒꢍꢓꢖꢔꢝ
ꢏꢒꢘꢑꢓꢝꢎꢑꢗꢝꢑꢖꢘꢐꢔꢐꢖꢗꢚꢑꢖꢒ-ꢕꢒꢌꢎꢌꢔꢝꢑꢐꢌꢑꢚꢐꢏꢎ0ꢝꢓꢕꢕꢒꢘꢔꢐꢌꢛꢑꢝ+ꢝꢔꢎ-ꢝꢑ2,ꢎꢘꢎꢑꢗꢑ-ꢗꢚꢏꢓꢌꢖꢔꢐꢒꢌꢑꢒꢘꢑꢏꢗꢐꢚꢓꢘꢎꢑ-ꢗ+ꢑꢘꢎꢗꢝꢒꢌꢗ4ꢚ+ꢑ4ꢎꢑꢎ6ꢕꢎꢖꢔꢎꢍꢑꢔꢒꢑꢘꢎꢝꢓꢚꢔꢑꢐꢌꢑꢝꢐꢛꢌꢐꢏꢐꢖꢗꢌꢔꢑꢐꢌ:ꢓꢘ+ꢑꢔꢒꢑꢔ,ꢎꢑꢓꢝꢎꢘ1ꢑꢗꢌꢍꢑꢔ,ꢎꢑꢐꢌꢖꢚꢓꢝꢐꢒꢌꢑꢒꢏꢑꢀꢚꢚꢐꢗꢌꢖꢎꢑꢕꢘꢒꢍꢓꢖꢔꢝꢑꢐꢌꢑꢝꢓꢖ,ꢑꢚꢐꢏꢎ0ꢝꢓꢕꢕꢒꢘꢔꢐꢌꢛꢑꢝ+ꢝ0
ꢔꢎ-ꢝꢑꢐ-ꢕꢚꢐꢎꢝꢑꢔ,ꢗꢔꢑꢔ,ꢎꢑ-ꢗꢌꢓꢏꢗꢖꢔꢓꢘꢎꢘꢑꢗꢝꢝꢓ-ꢎꢝꢑꢗꢚꢚꢑꢘꢐꢝ3ꢑꢒꢏꢑꢝꢓꢖ,ꢑꢓꢝꢎꢑꢗꢌꢍꢑꢗꢛꢘꢎꢎꢝꢑꢔꢒꢑꢐꢌꢍꢎ-ꢌꢐꢏ+ꢑꢀꢚꢚꢐꢗꢌꢖꢎꢑꢗꢛꢗꢐꢌꢝꢔꢑꢗꢚꢚꢑꢖꢚꢗꢐ-ꢝꢑꢗꢘꢐꢝꢐꢌꢛꢑꢏꢘꢒ-ꢑꢝꢓꢖ,ꢑꢓꢝꢎ.
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