AT25128N-10SE-2.7 [ETC]
EEPROM ; EEPROM\n
| 型号： | AT25128N-10SE-2.7 |
| 厂家： | 
ETC |
| 描述： | EEPROM
|
| 文件： | 总24页 (文件大小：644K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Features
• Serial Peripheral Interface (SPI) Compatible
• Supports SPI Modes 0 (0,0) and 3 (1,1)
• Low-voltage and Standard-voltage Operation
– 2.7 (VCC = 2.7V to 5.5V)
– 1.8 (VCC = 1.8V to 5.5V)
• 3 MHz Clock Rate
• 64-byte Page Mode and Byte Write Operation
• Block Write Protection
– Protect 1/4, 1/2, or Entire Array
• Write Protect (WP) Pin and Write Disable Instructions for
Both Hardware and Software Data Protection
• Self-timed Write Cycle (5 ms Typical)
• High-reliability
SPI Serial
EEPROMs
128K (16,384 x 8)
256K (32,768 x 8)
– Endurance: 100,000 Write Cycles
– Data Retention: >200 Years
• Automotive Grade and Extended Temperature Devices Available
• 8-lead PDIP, 8-lead EIAJ SOIC, 8-lead and 16-lead JEDEC SOIC, 14-lead and 20-lead
TSSOP, 8-lead Leadless Array and 8-ball dBGA™ Packages
Description
AT25128
AT25256
The AT25128/256 provides 131,072/262,144 bits of serial electrically-erasable pro-
grammable read only memory (EEPROM) organized as 16,384/32,768 words of 8 bits
each. The device is optimized for use in many industrial and commercial applications
where low-power and low-voltage operation are essential. The devices are available in
space saving 8-lead PDIP (AT25128/256), 8-lead EIAJ SOIC (AT25128/256), 8-lead
(continued)
Pin Configurations
14-lead TSSOP
20-lead TSSOP*
Pin Name
Function
NC
CS
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
NC
CS
SO
1
2
3
4
5
6
7
14
13
12
11
10
9
VCC
HOLD
NC
VCC
HOLD
HOLD
NC
CS
Chip Select
NC
SO
SCK
SI
Serial Data Clock
Serial Data Input
Serial Data Output
Ground
NC
NC
SO
NC
NC
NC
WP
GND
SCK
SI
NC
NC
8
WP
GND
DC
SCK
SI
SO
GND
VCC
WP
DC
NC
NC
Power Supply
Write Protect
Suspends Serial Input
No Connect
8-ball dBGA
8-lead Leadless Array
HOLD
NC
8
7
6
5
1
2
3
4
VCC
HOLD
SCK
SI
CS
CS
8
7
6
5
1
2
3
4
VCC
HOLD
SCK
SI
SO
SO
WP
GND
WP
GND
DC
Don't Connect
16-lead SOIC
Bottom View
8-lead PDIP
Bottom View
8-lead SOIC
CS
SO
1
16
15
VCC
HOLD
NC
2
NC
3
4
5
6
7
8
14
13
12
11
10
9
NC
NC
CS
SO
WP
1
2
3
4
8
7
6
5
VCC
HOLD
SCK
SI
CS
SO
1
2
3
4
8
7
6
5
VCC
NC
NC
HOLD
SCK
SI
NC
NC
WP
WP
GND
SCK
SI
GND
GND
Rev. 0872K–SEEPR–11/02
*Note: Pins 3, 4 and 17, 18 are internally connected for 14-lead TSSOP socket compatibility.
and 16-lead JEDEC SOIC (AT25128), 14-lead TSSOP (AT25128), 20-lead TSSOP (AT25128/256), 8-lead Leadless Array
(AT25256), and 8-ball dBGA packages. In addition, the entire family is available in 2.7V (2.7V to 5.5V) and 1.8V (1.8V to
5.5V) versions.
The AT25128/256 is enabled through the Chip Select pin (CS) and accessed via a 3-wire interface consisting of Serial Data
Input (SI), Serial Data Output (SO), and Serial Clock (SCK). All programming cycles are completely self-timed, and no sep-
arate ERASE cycle is required before WRITE.
BLOCK WRITE protection is enabled by programming the status register with top ¼, top ½ or entire array of write protec-
tion. Separate program enable and program disable instructions are provided for additional data protection. Hardware data
protection is provided via the WP pin to protect against inadvertent write attempts to the status register. The HOLD pin may
be used to suspend any serial communication without resetting the serial sequence.
Absolute Maximum Ratings*
*NOTICE:
Stresses beyond those listed under “Absolute Maxi-
mum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional
operation of the device at these or any other condi-
tions beyond those indicated in the operational sec-
tions of this specification is not implied. Exposure to
absolute maximum rating conditions for extended
periods may affect device reliability.
Operating Temperature.................................. -55°C to +125°C
Storage Temperature..................................... -65°C to +150°C
Voltage on Any Pin
with Respect to Ground.....................................-1.0V to +7.0V
Maximum Operating Voltage .......................................... 6.25V
DC Output Current........................................................ 5.0 mA
Block Diagram
16384/32768x8
2
AT25128/256
0872K–SEEPR–11/02
AT25128/256
Pin Capacitance(1)
Applicable over recommended operating range from TA = 25°C, f = 1.0 MHz, VCC = +5.0V (unless otherwise noted).
Symbol
COUT
CIN
Test Conditions
Max
8
Units
pF
Conditions
VOUT = 0V
VIN = 0V
Output Capacitance (SO)
Input Capacitance (CS, SCK, SI, WP, HOLD)
6
pF
Note:
1. This parameter is characterized and is not 100% tested.
DC Characteristics
Applicable over recommended operating range from TAI = -40°C to +85°C, VCC = +1.8V to +5.5V,
TAC = 0°C to +70°C, VCC = +1.8V to +5.5V(unless otherwise noted).
Symbol
VCC1
Parameter
Test Condition
Min
1.8
2.7
4.5
Typ
Max
3.6
5.5
5.5
3.0
Units
V
Supply Voltage
Supply Voltage
Supply Voltage
Supply Current
VCC2
V
VCC3
V
ICC1
VCC = 5.0V at 1 MHz, SO = Open, Read
2.0
3.0
mA
VCC = 5.0V at 2 MHz,
SO = Open, Read, Write
ICC2
Supply Current
5.0
mA
ISB1
ISB2
ISB3
IIL
Standby Current
Standby Current
Standby Current
Input Leakage
VCC = 1.8V, CS = VCC
VCC = 2.7V, CS = VCC
VCC = 5.0V, CS = VCC
VIN = 0V to VCC
0.1
0.2
2.0
2.0
2.0
µA
µA
µA
µA
µA
V
5.0
-3.0
-3.0
3.0
IOL
Output Leakage
VIN = 0V to VCC, TAC = 0°C to 70°C
3.0
(1)
VIL
Input Low-voltage
Input High-voltage
Output Low-voltage
Output High-voltage
Output Low-voltage
Output High-voltage
-1.0
VCC x 0.3
VCC + 0.5
0.4
(1)
VIH
VCC x 0.7
V
VOL1
VOH1
VOL2
VOH2
I
OL = 3.0 mA
IOH = -1.6 mA
OL = 0.15 mA
IOH = -100 µA
V
4.5 ≤ VCC ≤ 5.5V
1.8V ≤ VCC ≤ 3.6V
VCC - 0.8
VCC - 0.2
V
I
0.2
V
V
Note:
1. VIL and VIH max are reference only and are not tested.
3
0872K–SEEPR–11/02
AC Characteristics
Applicable over recommended operating range from TA = -40°C to + 85°C, VCC = As Specified,
CL = 1 TTL Gate and 100 pF (unless otherwise noted).
Symbol
Parameter
Voltage
Min
Max
Units
4.5 - 5.5
2.7 - 5.5
1.8 - 5.5
0
0
0
3.0
2.1
0.5
fSCK
SCK Clock Frequency
MHz
4.5 - 5.5
2.7 - 5.5
1.8 - 5.5
2
2
2
tRI
Input Rise Time
Input Fall Time
SCK High Time
SCK Low Time
CS High Time
µs
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
4.5 - 5.5
2.7 - 5.5
1.8 - 5.5
2
2
2
tFI
4.5 - 5.5
2.7 - 5.5
1.8 - 5.5
150
200
800
tWH
tWL
tCS
tCSS
tCSH
tSU
tH
4.5 - 5.5
2.7 - 5.5
1.8 - 5.5
150
200
800
4.5 - 5.5
2.7 - 5.5
1.8 - 5.5
250
250
1000
4.5 - 5.5
2.7 - 5.5
1.8 - 5.5
100
250
1000
CS Setup Time
CS Hold Time
4.5 - 5.5
2.7 - 5.5
1.8 - 5.5
150
250
1000
4.5 - 5.5
2.7 - 5.5
1.8 - 5.5
30
50
100
Data In Setup Time
Data In Hold Time
Hold Setup Time
Hold Hold Time
Output Valid
4.5 - 5.5
2.7 - 5.5
1.8 - 5.5
50
50
100
4.5 - 5.5
2.7 - 5.5
1.8 - 5.5
100
100
400
tHD
tCD
tV
4.5 - 5.5
2.7 - 5.5
1.8 - 5.5
200
300
400
4.5 - 5.5
2.7 - 5.5
1.8 - 5.5
0
0
0
150
200
800
4.5 - 5.5
2.7 - 5.5
1.8 - 5.5
0
0
0
tHO
Output Hold Time
Hold to Output Low Z
4.5 - 5.5
2.7 - 5.5
1.8 - 5.5
0
0
0
100
200
300
tLZ
4
AT25128/256
0872K–SEEPR–11/02
AT25128/256
AC Characteristics (Continued)
Applicable over recommended operating range from TA = -40°C to + 85°C, VCC = As Specified,
CL = 1 TTL Gate and 100 pF (unless otherwise noted).
Symbol
Parameter
Voltage
Min
Max
Units
4.5 - 5.5
2.7 - 5.5
1.8 - 5.5
100
200
300
tHZ
Hold to Output High Z
ns
4.5 - 5.5
2.7 - 5.5
1.8 - 5.5
200
250
1000
tDIS
Output Disable Time
ns
4.5 - 5.5
2.7 - 5.5
1.8 - 5.5
5
10
10
tWC
Write Cycle Time
ms
Endurance(1)
5.0V, 25°C, Page Mode
100K
Write Cycles
Note:
1. This parameter is characterized and is not 100% tested. Contact Atmel for further information.
Serial Interface
Description
MASTER: The device that generates the serial clock.
SLAVE: Because the Serial Clock pin (SCK) is always an input, the AT25128/256
always operates as a slave.
TRANSMITTER/RECEIVER: The AT25128/256 has seperate pins designated for data
transmission (SO) and reception (SI).
MSB: The Most Significant Bit (MSB) is the first bit transmitted and received.
SERIAL OP-CODE: After the device is selected with CS going low, the first byte will
be received. This byte contains the op-code that defines the operations to be performed.
INVALID OP-CODE: If an invalid op-code is received, no data will be shifted into the
AT25128/256, and the serial output pin (SO) will remain in a high impedance state until
the falling edge of CS is detected again. This will reinitialize the serial communication.
CHIP SELECT: The AT25128/256 is selected when the CS pin is low. When the device
is not selected, data will not be accepted via the SI pin, and the serial output pin (SO)
will remain in a high impedance state.
HOLD: The HOLD pin is used in conjunction with the CS pin to select the AT25128/256.
When the device is selected and a serial sequence is underway, HOLD can be used to
pause the serial communication with the master device without resetting the serial
sequence. To pause, the HOLD pin must be brought low while the SCK pin is low. To
resume serial communication, the HOLD pin is brought high while the SCK pin is low
(SCK may still toggle during HOLD). Inputs to the SI pin will be ignored while the SO pin
is in the high impedance state.
WRITE PROTECT: The write protect pin (WP) will allow normal read/write operations
when held high. When the WP pin is brought low and WPEN bit is “1”, all write opera-
tions to the status register are inhibited. WP going low while CS is still low will interrupt a
write to the status register. If the internal write cycle has already been initiated, WP
going low will have no effect on any write operation to the status register. The WP pin
function is blocked when the WPEN bit in the status register is “0”. This will allow the
user to install the AT25128/256 in a system with the WP pin tied to ground and still be
able to write to the status register. All WP pin functions are enabled when the WPEN bit
is set to “1”.
5
0872K–SEEPR–11/02
SPI Serial Interface
AT25128/256
Functional
Description
The AT25128/256 is designed to interface directly with the synchronous serial periph-
eral interface (SPI) of the 6800 type series of microcontrollers.
The AT25128/256 utilizes an 8-bit instruction register. The list of instructions and their
operation codes are contained in Table 1. All instructions, addresses, and data are
transferred with the MSB first and start with a high-to-low CS transition..
Table 1. Instruction Set for the AT25128/256
Instruction Name
WREN
Instruction Format
0000 X110
Operation
Set Write Enable Latch
Reset Write Enable Latch
Read Status Register
Write Status Register
Read Data from Memory Array
Write Data to Memory Array
WRDI
0000 X100
RDSR
0000 X101
WRSR
0000 X001
READ
0000 X011
WRITE
0000 X010
6
AT25128/256
0872K–SEEPR–11/02
AT25128/256
WRITE ENABLE (WREN): The device will power-up in the write disable state when VCC
is applied. All programming instructions must therefore be preceded by a Write Enable
instruction.
WRITE DISABLE (WRDI): To protect the device against inadvertent writes, the Write
Disable instruction disables all programming modes. The WRDI instruction is indepen-
dent of the status of the WP pin.
READ STATUS REGISTER (RDSR): The Read Status Register instruction provides
access to the status register. The READY/BUSY and Write Enable status of the device
can be determined by the RDSR instruction. Similarly, the Block Write Protection bits
indicate the extent of protection employed. These bits are set by using the WRSR instruc-
tion
.
Table 2. Status Register Format
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
WPEN
X
X
X
BP1
BP0
WEN
RDY
Table 3. Read Status Register Bit Definition
Bit
Definition
Bit 0 (RDY)
Bit 0 = 0 (RDY) indicates the device is READY.
Bit 0 = 1 indicates the write cycle is in progress.
Bit 1 (WEN)
Bit 1 = 0 indicates the device is not WRITE ENABLED. Bit 1 = 1 indicates
the device is WRITE ENABLED.
Bit 2 (BP0)
Bit 3 (BP1)
See Table 4.
See Table 4.
Bits 4 - 6 are 0s when device is not in an internal write cycle.
Bit 7 (WPEN) See Table 5.
Bits 0 - 7 are 1s during an internal write cycle.
WRITE STATUS REGISTER (WRSR): The WRSR instruction allows the user to select
one of four levels of protection. The AT25128/256 is divided into four array segments.
Top quarter (1/4), top half (1/2), or all of the memory segments can be protected. Any of
the data within any selected segment will therefore be READ only. The block write pro-
tection levels and corresponding status register control bits are shown in Table 4.
The three bits, BP0, BP1, and WPEN are nonvolatile cells that have the same properties
and functions as the regular memory cells (e.g. WREN, tWC, RDSR).
Table 4. Block Write Protect Bits
Status Register Bits
Array Addresses Protected
Level
0
BP1
BP0
AT25128
None
AT25256
None
0
0
1
1
0
1
0
1
1(1/4)
2(1/2)
3(All)
3000 - 3FFF
2000 - 3FFF
0000 - 3FFF
6000 - 7FFF
4000 - 7FFF
0000 - 7FFF
7
0872K–SEEPR–11/02
The WRSR instruction also allows the user to enable or disable the write protect (WP)
pin through the use of the Write Protect Enable (WPEN) bit. Hardware write protection is
enabled when the WP pin is low and the WPEN bit is “1”. Hardware write protection is
disabled when either the WP pin is high or the WPEN bit is “0.” When the device is hard-
ware write protected, writes to the Status Register, including the Block Protect bits and
the WPEN bit, and the block-protected sections in the memory array are disabled.
Writes are only allowed to sections of the memory which are not block-protected.
NOTE: When the WPEN bit is hardware write protected, it cannot be changed back to
“0”, as long as the WP pin is held low.
Table 5. WPEN Operation
Protected
Blocks
Unprotected
Blocks
Status
Register
WPEN
WP
X
WEN
0
0
1
1
X
X
0
1
0
1
0
1
Protected
Protected
Protected
Protected
Protected
Protected
Protected
Writable
Protected
Writable
Protected
Writable
Protected
Writable
X
Low
Low
High
High
Protected
Protected
Protected
Writable
READ SEQUENCE (READ): Reading the AT25128/256 via the SO (Serial Output) pin
requires the following sequence. After the CS line is pulled low to select a device, the
READ op-code is transmitted via the SI line followed by the byte address to be read
(Refer to Table 6). Upon completion, any data on the SI line will be ignored. The data
(D7 - D0) at the specified address is then shifted out onto the SO line. If only one byte is
to be read, the CS line should be driven high after the data comes out. The READ
sequence can be continued since the byte address is automatically incremented and
data will continue to be shifted out. When the highest address is reached, the address
counter will roll over to the lowest address allowing the entire memory to be read in one
continuous READ cycle.
WRITE SEQUENCE (WRITE): In order to program the AT25128/256, two separate
instructions must be executed. First, the device must be write enabled via the Write
Enable (WREN) Instruction. Then a Write (WRITE) Instruction may be executed. Also,
the address of the memory location(s) to be programmed must be outside the protected
address field location selected by the Block Write Protection Level. During an internal
write cycle, all commands will be ignored except the RDSR instruction.
A Write Instruction requires the following sequence. After the CS line is pulled low to
select the device, the WRITE op-code is transmitted via the SI line followed by the byte
address and the data (D7 - D0) to be programmed (Refer to Table 6). Programming will
start after the CS pin is brought high. (The LOW-to-High transition of the CS pin must
occur during the SCK low time immediately after clocking in the D0 (LSB) data bit.
The READY/BUSY status of the device can be determined by initiating a READ STA-
TUS REGISTER (RDSR) Instruction. If Bit 0 = 1, the WRITE cycle is still in progress. If
Bit 0 = 0, the WRITE cycle has ended. Only the READ STATUS REGISTER instruction
is enabled during the WRITE programming cycle.
8
AT25128/256
0872K–SEEPR–11/02
AT25128/256
The AT25128/256 is capable of a 64-byte PAGE WRITE operation. After each byte of
data is received, the six low order address bits are internally incremented by one; the
high order bits of the address will remain constant. If more than 64 bytes of data are
transmitted, the address counter will roll over and the previously written data will be
overwritten. The AT25128/256 is automatically returned to the write disable state at the
completion of a WRITE cycle.
NOTE: If the device is not Write enabled (WREN), the device will ignore the Write
instruction and will return to the standby state, when CS is brought high. A new CS fall-
ing edge is required to re-initiate the serial communication.
Table 6. Address Key
Address
AN
AT25128
A13 - A0
A15 - A14
AT25256
A14 - A0
A15
Don’t Care Bits
9
0872K–SEEPR–11/02
Timing Diagrams (for SPI Mode 0 (0, 0))
Synchronous Data Timing
tCS
VIH
CS
VIL
tCSH
tCSS
VIH
tWH
tWL
SCK
VIL
tSU
tH
VIH
VIL
SI
VALID IN
tHO
tDIS
tV
VOH
VOL
HI-Z
HI-Z
SO
WREN Timing
WRDI Timing
10
AT25128/256
0872K–SEEPR–11/02
AT25128/256
RDSR Timing
CS
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14
SCK
SI
INSTRUCTION
DATA OUT
HIGH IMPEDANCE
7
6
5
4
3
2
1
0
SO
MSB
WRSR Timing
READ Timing
11
0872K–SEEPR–11/02
WRITE Timing
HOLD Timing
CS
tCD
tCD
SCK
tHD
tHD
HOLD
SO
tHZ
tLZ
12
AT25128/256
0872K–SEEPR–11/02
AT25128/256
AT25128 Ordering Information
Ordering Code
Package
Operation Range
AT25128-10PI-2.7
AT25128N-10SI-2.7
AT25128W-10SI-2.7
AT25128-10UI-2.7
AT25128N1-10SI-2.7
AT25128T1-10TI-2.7
8P3
Industrial
8S1
(-40°C to 85°C)
8S2
8U4
16S1
14A2
AT25128-10PI-1.8
AT25128N-10SI-1.8
AT25128W-10SI-1.8
AT25128-10UI-1.8
AT25128N1-10SI-1.8
AT25128T1-10TI-1.8
8P3
Industrial
8S1
(-40°C to 85°C)
8S2
8U4
16S1
14A2
AT25128N-10SE-2.7
8S1
High Grade/Extended Temperature
(-40°C to 125°C)
Note:
For 2.7V devices used in the 4.5V to 5.5V range, please refer to performance values in the AC and DC Characteristics tables.
Package Type
8-lead, 0.300" Wide, Plastic Dual In-line Package (PDIP)
8-lead, 0.150" Wide, Plastic Gull Wing Small Outline Package (JEDEC SOIC)
8-lead, 0.200" Wide, Plastic Gull Wing Small Outline Package (EIAJ SOIC)
8-ball, die Ball Grid Array Package (dBGA)
8P3
8S1
8S2
8U4
16S1
14A2
16-lead, 0.150" Wide, Plastic Gull Wing Small Outline Package (JEDEC SOIC)
14-lead, 0.170" Wide, Thin Shrink Small Outline Package (TSSOP)
Options
-2.7
-1.8
Low-voltage (2.7V to 5.5V)
Low-voltage (1.8V to 5.5V)
13
0872K–SEEPR–11/02
AT25256 Ordering Information
Ordering Code
Package
Operation Range
AT25256-10PI-2.7
AT25256W-10SI-2.7
AT25256-10CI-2.7
AT25256-10UI-2.7
AT25256T2-10TI-2.7
8P3
Industrial
8S2
(-40°C to 85°C)
8CN3
8U3
20A2
AT25256-10PI-1.8
AT25256W-10SI-1.8
AT25256-10CI-1.8
AT25256-10UI-1.8
AT25256T2-10TI-1.8
8P3
Industrial
8S2
(-40°C to 85°C)
8CN3
8U3
20A2
AT25256W-10SE-2.7
8S2
High Grade/Extended Temperature
(-40°C to 125°C)
Note:
For 2.7V devices used in the 4.5V to 5.5V range, please refer to performance values in the AC and DC Characteristics tables.
Package Type
8P3
8-lead, 0.300" Wide, Plastic Dual In-line Package (PDIP)
8S2
8-lead, 0.200" Wide, Plastic Gull Wing Small Outline Package (EIAJ SOIC)
8-lead, 0.230" Wide, Leadless Array Package (LAP)
8-ball, die Ball Grid Array Package (dBGA)
20-lead, 0.170" Wide, Thin Shrink Small Outline Package (TSSOP)
Options
8CN3
8U3
20A2
-2.7
-1.8
Low-voltage (2.7V to 5.5V)
Low-voltage (1.8V to 5.5V)
14
AT25128/256
0872K–SEEPR–11/02
AT25128/256
Packaging Information
8P3 – PDIP
E
1
E1
N
Top View
c
eA
End View
COMMON DIMENSIONS
(Unit of Measure = inches)
D
e
MIN
MAX
NOM
NOTE
SYMBOL
D1
A2 A
A
0.210
0.195
0.022
0.070
0.045
0.014
0.400
2
A2
b
0.115
0.014
0.045
0.030
0.008
0.355
0.005
0.300
0.240
0.130
0.018
0.060
0.039
0.010
0.365
5
6
6
b2
b3
c
D
3
3
4
3
b2
L
D1
E
b3
4 PLCS
0.310
0.250
0.325
0.280
b
E1
e
0.100 BSC
0.300 BSC
0.130
Side View
eA
L
4
2
0.115
0.150
Notes: 1. This drawing is for general information only; refer to JEDEC Drawing MS-001, Variation BA for additional information.
2. Dimensions A and L are measured with the package seated in JEDEC seating plane Gauge GS-3.
3. D, D1 and E1 dimensions do not include mold Flash or protrusions. Mold Flash or protrusions shall not exceed 0.010 inch.
4. E and eA measured with the leads constrained to be perpendicular to datum.
5. Pointed or rounded lead tips are preferred to ease insertion.
6. b2 and b3 maximum dimensions do not include Dambar protrusions. Dambar protrusions shall not exceed 0.010 (0.25 mm).
01/09/02
TITLE
DRAWING NO.
REV.
2325 Orchard Parkway
San Jose, CA 95131
8P3, 8-lead, 0.300" Wide Body, Plastic Dual
In-line Package (PDIP)
8P3
B
R
15
0872K–SEEPR–11/02
8S1 – JEDEC SOIC
1
3
2
H
N
Top View
e
B
A
D
COMMON DIMENSIONS
(Unit of Measure = mm)
Side View
MIN
–
MAX
1.75
0.51
0.25
5.00
4.00
NOM
NOTE
SYMBOL
A
B
C
D
E
e
–
A2
L
–
–
–
–
–
–
–
–
1.27 BSC
E
H
L
–
–
–
–
6.20
1.27
End View
Note:
This drawing is for general information only. Refer to JEDEC Drawing MS-012 for proper dimensions, tolerances, datums, etc.
10/10/01
TITLE
DRAWING NO.
REV.
2325 Orchard Parkway
San Jose, CA 95131
8S1, 8-lead (0.150" Wide Body), Plastic Gull Wing
8S1
A
R
Small Outline (JEDEC SOIC)
16
AT25128/256
0872K–SEEPR–11/02
AT25128/256
8S2 – EIAJ SOIC
1
H
N
Top View
e
b
A
D
COMMON DIMENSIONS
(Unit of Measure = mm)
Side View
MIN
1.78
0.05
0.35
0.18
5.13
5.13
7.62
0.51
MAX
2.03
0.33
0.51
0.25
5.38
5.41
8.38
0.89
NOM
NOTE
SYMBOL
A
A1
b
A1
5
5
C
D
E
H
L
L
E
2, 3
4
End View
e
1.27 BSC
Notes: 1. This drawing is for general information only; refer to EIAJ Drawing EDR-7320 for additional information.
2. Mismatch of the upper and lower dies and resin burrs aren't included.
3. It is recommended that upper and lower cavities be equal. If they are different, the larger dimension shall be regarded.
4. Determines the true geometric position.
5. Values b,C apply to pb/Sn solder plated terminal. The standard thickness of the solder layer shall be 0.010 +0.010/-0.005 mm.
5/2/02
TITLE
DRAWING NO.
REV.
8S2, 8-lead, 0.209" Body, Plastic Small
Outline Package (EIAJ)
2325 Orchard Parkway
San Jose, CA 95131
8S2
B
R
17
0872K–SEEPR–11/02
8CN3 – LAP
Marked Pin1 Indentifier
E
A
D
A1
Top View
Side View
Pin1 Corner
L1
0.10 mm
TYP
8
1
e
COMMON DIMENSIONS
(Unit of Measure = mm)
7
2
3
MIN
0.94
0.30
0.36
5.89
4.83
MAX
1.14
0.38
0.46
6.09
5.03
NOM
1.04
NOTE
SYMBOL
A
6
5
A1
b
0.34
b
0.41
1
4
D
5.99
E
4.93
e1
L
e
1.27 BSC
0.56 REF
0.67
e1
L
Bottom View
0.62
0.92
0.72
1.02
1
1
L1
0.97
Note: 1. Metal Pad Dimensions.
11/14/01
DRAWING NO.
REV.
A
TITLE
2325 Orchard Parkway
San Jose, CA 95131
8CN3, 8-lead, (6 x 5 x 1.04 mm Body), Lead Pitch 1.27 mm,
Leadless Array Package (LAP)
8CN3
R
18
AT25128/256
0872K–SEEPR–11/02
AT25128/256
8U3 – dBGA
E
Pin 1 Mark
this corner
D
Top View
-
-
Z
COMMON DIMENSIONS
(Unit of Measure = mm)
8
7
1
2
3
Øb
0
.
.
1
0
5
8
M
M
Z
Z
X
Y
#
MIN
MAX
NOM
NOTE
SYMBOL
0
D
3.86
6
D1
E
0.81 TYP
d
2.95
4
5
E1
e
1.10 TYP
0.75 TYP
0.75 TYP
0.90 REF
0.52
D1
E1
d
A2
A
e
A
A1
A1
A2
0.49
0.35
0.47
0.55
0.41
0.53
Bottom View
0.38
Side View
Ø
b
0.50
Notes: 1. This drawing is for general information only. No JEDEC Drawing to refer to for additional information.
2. Dimension is measured at the maximum solder ball diameter, parallel to primary datum Z.
01/09/02
TITLE
DRAWING NO.
REV.
8U3, 8-ball 0.75 pitch, Die Ball Grid Array
2325 Orchard Parkway
San Jose, CA 95131
8U3
A
R
Package (dBGA) AT25256 (AT19874)
19
0872K–SEEPR–11/02
8U4 – dBGA
E
Pin 1 Mark
this corner
D
Top View
-
-
Z
COMMON DIMENSIONS
(Unit of Measure = mm)
8
1
2
3
Øb
0
.
.
1
0
5
8
M
M
Z
Z
X
Y
#
MIN
MAX
NOM
NOTE
SYMBOL
7
0
D
3.73
6
D1
E
0.74 TYP
d
2.21
4
5
E1
e
0.73 TYP
0.75 TYP
0.75 TYP
0.90 REF
0.52
D1
E1
d
A2
A
e
A
A1
A2
0.49
0.35
0.47
0.55
0.41
0.53
A1
Bottom View
0.38
Ø
b
0.50
Side View
Notes: 1. This drawing is for general information only. No JEDEC Drawing to refer to for additional information.
2. Dimension is measured at the maximum solder ball diameter, parallel to primary datum Z.
01/09/02
TITLE
DRAWING NO.
REV.
2325 Orchard Parkway
San Jose, CA 95131
8U4, 8-ball 0.75 pitch, Die Ball Grid Array
Package (dBGA) AT25128 (AT19875)
8U4
A
R
20
AT25128/256
0872K–SEEPR–11/02
AT25128/256
16S1 – JEDEC SOIC
1
3
2
H
N
Top View
e
B
A
D
COMMON DIMENSIONS
(Unit of Measure = mm)
Side View
MIN
1.35
0.33
0.19
9.80
3.80
MAX
1.75
0.51
0.25
10.00
4.00
NOM
NOTE
SYMBOL
A
B
C
D
E
e
–
A2
L
–
5
–
–
2
3
–
1.27 BSC
E
H
L
5.80
0.40
–
–
6.20
1.27
4
End View
Notes: 1. This drawing is for general information only; refer to JEDEC Drawing MS-012 for proper dimensions, tolerances, datums, etc.
2. Dimension D does not include mold Flash, protrusions or gate burrs. Mold Flash, protrusions and gate burrs shall not exceed
0.15 mm (0.006 in) per side.
3. Dimension E does not include inter-lead Flash or protrusions. Inter-lead Flash and protrusions shall not exceed 0.25 mm (0.010 in)
per side.
4. L is the length of terminal for soldering to a substrate.
5. The lead width B, as measured 0.36 mm (0.014 in) or greater above the seating plane, shall not exceed a maximum value of 0.61 mm
(0.024 in).
10/15/01
TITLE
DRAWING NO.
REV.
16S1, 16-lead, 0.150" Body,
Plastic Gull Wing Small Outline (SOIC )
2325 Orchard Parkway
San Jose, CA 95131
A
16S1
R
21
0872K–SEEPR–11/02
14A2 – TSSOP
b
L
L1
E1
E
End View
e
COMMON DIMENSIONS
(Unit of Measure = mm)
MIN
MAX
NOM
NOTE
SYMBOL
Top View
D
D
4.90
5.00
6.40 BSC
4.40
5.10
2, 5
E
A
E1
A
4.30
4.50
1.20
1.05
0.30
3, 5
4
A2
A2
b
0.80
0.19
1.00
e
0.65 BSC
0.60
L
0.45
0.75
Side View
L1
1.00 REF
Notes: 1. This drawing is for general information only. Please refer to JEDEC Drawing MO-153, Variation AB-1 for
additional information.
2. Dimension "D" does not include mold Flash, protrusions or gate burrs. Mold Flash, protrusions and gate
burrs shall not exceed 0.15 mm (0.006 in) per side.
3. Dimension "E1" does not include inter-lead Flash or protrusions. Inter-lead Flash and protrusions shall not
exceed 0.25 mm (0.010 in) per side.
4. Dimension "b" does not include Dambar protrusion. Allowable Dambar protrusion shall be 0.08 mm total
in excess of the "b" dimension at maximum material condition. Dambar cannot be located on the lower
radius of the foot. Minimum space between protrusion and adjacent lead is 0.07 mm.
5. Dimension "D" and "E1" to be determined at Datum Plane H.
12/28/01
TITLE
DRAWING NO.
REV.
A
2325 Orchard Parkway
San Jose, CA 95131
14A2,14-lead (4.4 x 5 mm Body), 0.65 Pitch,
Thin Shrink Small Outline Package (TSSOP)
14A2
R
22
AT25128/256
0872K–SEEPR–11/02
AT25128/256
20A2 – TSSOP
b
L
L1
E
E1
End View
e
COMMON DIMENSIONS
(Unit of Measure = mm)
Top View
D
MIN
MAX
NOM
6.50
NOTE
SYMBOL
D
6.40
6.60
2, 5
E
6.40 BSC
4.40
A
A2
E1
A
4.30
–
4.50
1.20
1.05
0.30
3, 5
4
–
A2
b
0.80
0.19
1.00
–
e
0.65 BSC
0.60
L
0.45
0.75
Side View
L1
1.00 REF
Notes: 1. This drawing is for general information only. Please refer to JEDEC Drawing MO-153, Variation AC, for additional
information.
2. Dimension D does not include mold Flash, protrusions or gate burrs. Mold Flash, protrusions and gate burrs shall
not exceed 0.15 mm (0.006 in) per side.
3. Dimension E1 does not include inter-lead Flash or protrusions. Inter-lead Flash and protrusions shall not exceed
0.25 mm (0.010 in) per side.
4. Dimension b does not include Dambar protrusion. Allowable Dambar protrusion shall be 0.08 mm total in excess
of the b dimension at maximum material condition. Dambar cannot be located on the lower radius of the foot.
Minimum space between protrusion and adjacent lead is 0.07 mm.
5. Dimension D and E1 to be determined at Datum Plane H.
6/3/02
TITLE
DRAWING NO.
REV.
2325 Orchard Parkway
San Jose, CA 95131
20A2, 20-lead (4.4 x 6.5 mm Body), 0.65 pitch,
Thin Shrink Small Outline Package (TSSOP)
20A2
C
R
23
0872K–SEEPR–11/02
Atmel Headquarters
Atmel Operations
Corporate Headquarters
2325 Orchard Parkway
San Jose, CA 95131
TEL 1(408) 441-0311
FAX 1(408) 487-2600
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TEL (49) 71-31-67-0
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© Atmel Corporation 2002.
Atmel Corporation makes no warranty for the use of its products, other than those expressly contained in the Company’s standard warranty
which is detailed in Atmel’s Terms and Conditions located on the Company’s web site. The Company assumes no responsibility for any errors
which may appear in this document, reserves the right to change devices or specifications detailed herein at any time without notice, and does
not make any commitment to update the information contained herein. No licenses to patents or other intellectual property of Atmel are granted
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components in life support devices or systems.
ATMEL® is the registered trademark of Atmel; dBGA™ is the trademark of Atmel.
Other terms and product names may be the trademarks of others.
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0872K–SEEPR–11/02
xM
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