B12V11402 [ETC]
NPN LOW NOISE SILICON MICROWAVE TRANSISTOR; NPN低噪声硅微波晶体管
| 型号： | B12V11402 |
| 厂家： | 
ETC |
| 描述： | NPN LOW NOISE SILICON MICROWAVE TRANSISTOR |
| 文件： | 总7页 (文件大小：42K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BIPOLARICS,INC.
Part Number B12V114
NPN LOW NOISE SILICON MICROWAVE TRANSISTOR
PRODUCT DATA SHEET
FEATURES:
DESCRIPTION AND APPLICATIONS:
Bipolarics' B12V114 is a high performance silicon bipolar
transistor intended for use in low noise applications at VHF,
UHF and microwave frequencies. These applications include
narrowband and wideband amplifiers, oscillators and
micropower transmitters. Typical applications include cellu-
lar telephone preamplifiers/mixers, CATV amplifiers and
Part 15 receivers and transmitters. Commercial plastic, sur-
face mount and hermetic (including Stripline) packaging
options make this device very versatile; from consumer prod-
uct to space flight.
• High Gain Bandwidth Product
f = 10 GHz typ @ IC = 25mA
t
• Low Noise Figure
1.4 dB typ at 1.0 GHz
1.7 dB typ at 2.0 GHz
• High Gain
|S21 | 2 16.9 dB @ 1.0 GHz
=
Absolute Maximum Ratings:
12.0 dB @ 2.0 GHz
SYMBOL
PARAMETERS
RATING
UNITS
• Dice, Plastic, Hermetic and Surface
VCBO
VCEO
VEBO
IC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
20
12
V
V
Mount packages available
1.5
V
60
mA
oC
oC
PERFORMANCE DATA:
• Electrical Characteristics (TA = 25oC)
(1)
T
Junction Temperature
Storage Temperature
200
J
TSTG
-65 to 150
(1) Depends on package
SYMBOL
PARAMETERS & CONDITIONS
CE = 8V, IC = 25 mA unless stated
UNIT
MIN.
TYP.
MAX.
V
Gain Bandwidth Product
Insertion Power Gain:
GHz
10.0
f
t
2
|S21
|
f = 1.0 GHz
f = 2.0 GHz
dB
dB
16.9
12.0
P
Power output at 1dB compression:
Gain at 1dB compression:
f = 1.0 GHz
dBm
dBm
18.0
15.0
1dB
G
f = 1.0 GHz
1dB
NF
Noise Figure: VCE = 8V, IC = 10mA
Forward Current Transfer Ratio:
f = 1.0 GHz
f = 1MHz
dB
1.4
hFE
30
150
300
V
CE = 8V, IC =25 mA
ICBO
IEBO
CCB
Collector Cutoff Current : VCB = 8V
Emitter Cutoff Current : VEB = 1V
Collector Base Capacitance: VCB = 8V
µA
µA
pF
0.2
1.0
f = 1MHz
0.25
PAGE 2
BIPOLARICS,INC.
Part Number B12V114
NPN LOW NOISE SILICON MICROWAVE TRANSISTOR
PRODUCTDATASHEET
TYPICAL S PARAMETERS:
BIAS CONDITION: VCE = 8 V, IC = 10 mA
S-MATRIX:
ZS = 50.0 + J 0.0
ZL = 50.0 + J 0.0
(NOTE: S-Parameters were taken in a ceramic Micro-X package; See package outline 35, 36)
FREQ.
GHz
S11
S21
S12
S22
Ang dB
S21
Mag
Ang Mag
Ang Mag
Ang Mag
0.20000
0.40000
0.60000
0.80000
1.00000
1.20000
1.40000
1.60000
1.80000
2.00000
2.20000
2.40000
2.60000
2.80000
3.00000
3.20000
3.40000
3.60000
3.80000
4.00000
4.20000
0.5956
0.5821
0.5248
0.5188
0.4786
0.4518
0.4623
0.5688
0.5432
0.5559
0.5956
0.5888
0.6998
0.6918
0.6382
0.6531
0.6683
0.7161
0.7079
0.6683
0.6760
-62
-114
-134
-149
-164
-168
-175
166
164
157
146
142
138
132
131
127
124
115
113
116
109
15.84
147
132
114
106
99
92
89
85
84
78
74
71
69
65
63
61
59
56
53
52
48
0.0251
59
56
50
52
55
56
58
59
60
58
60
62
64
65
66
67
68
69
68
72
69
0.7244
-29
-45
-50
-54
-52
-52
-63
-61
-63
-65
-75
-79
-86
-93
-97
24.0
12.02
9.120
7.244
6.456
5.370
4.841
4.315
3.758
3.630
3.388
3.090
2.917
2.754
2.511
2.344
2.213
2.162
1.972
1.927
1.840
0.0446
0.0512
0.0602
0.0676
0.0741
0.0812
0.0901
0.1023
0.1135
0.1202
0.1230
0.1333
0.1396
0.1479
0.1548
0.1603
0.1698
0.1698
0.1778
0.1927
0.6309
0.4466
0.4466
0.3235
0.3311
0.2660
0.2454
0.2722
0.2317
0.2187
0.1905
0.1995
0.1927
0.1883
0.1862
0.1737
0.2137
0.1862
0.2089
0.2041
21.6
19.2
17.2
16.2
14.6
13.7
12.7
11.5
11.2
10.6
9.8
9.3
8.8
8.0
7.4
6.9
6.7
5.9
5.7
-106
-111
-123
-132
-127
-132
5.3
PAGE 3
BIPOLARICS,INC.
Part Number B12V114
NPN LOW NOISE SILICON MICROWAVE TRANSISTOR
PRODUCTDATASHEET
TYPICAL S PARAMETERS:
BIAS CONDITION: VCE = 8V, IC = 25 mA
S-MATRIX:
ZS = 50.0 + J 0.0
ZL = 50.0 + J 0.0
(NOTE: S-Parameters were taken in a ceramic Micro-X package; See package outline 35, 36)
FREQ.
GHz
S11
S21
S12
S22
S21
dB
Mag
Ang Mag
Ang Mag
Ang Mag
Ang
0.20000
0.40000
0.60000
0.80000
1.00000
1.20000
1.40000
1.60000
1.80000
2.00000
2.20000
2.40000
2.60000
2.80000
3.00000
3.20000
3.40000
3.60000
3.80000
4.00000
4.20000
0.4466
0.4897
0.4677
0.4731
0.4365
0.4120
0.4365
0.5623
0.5308
0.5495
0.5888
0.5821
0.6165
0.6309
0.6309
0.6456
0.6606
0.6918
0.6531
0.6531
0.6683
-96
-128
-154
-157
-166
-170
176
170
158
152
142
137
135
130
129
124
121
115
112
114
107
17.78
14.28
10.35
8.317
6.998
5.888
5.128
4.518
4.168
3.981
3.758
3.273
3.126
2.917
2.630
2.483
2.371
2.317
2.113
2.089
1.949
143
124
108
100
86
80
87
84
83
78
73
71
69
65
64
61
60
56
54
54
49
0.0229
61
58
59
61
64
65
68
69
68
64
66
67
69
69
70
68
70
69
70
73
70
0.5888
-36
-53
-56
-58
-54
-53
-65
-65
-70
25.0
23.1
20.3
18.4
16.9
15.4
14.2
13.1
12.4
12.0
11.5
10.3
9.9
9.3
8.4
7.9
7.5
7.3
6.5
6.4
5.8
0.0380
0.0457
0.0562
0.0645
0.0758
0.0812
0.0922
0.1059
0.1161
0.1288
0.1333
0.1462
0.1531
0.1621
0.1678
0.1757
0.1862
0.1862
0.1995
0.2162
0.4677
0.3090
0.2951
0.2398
0.2483
0.2089
0.1905
0.1972
0.1659
0.1445
0.1303
0.1428
0.1258
0.1348
0.1288
0.1230
0.1905
0.1445
0.1584
0.1819
-70
-84
-88
-100
-109
-114
-124
-131
-137
-156
-141
-152
PAGE 4
BIPOLARICS,INC.
Part Number B12V114
NPN LOW NOISE SILICON MICROWAVE TRANSISTOR
PRODUCT DATA SHEET
TYPICAL S PARAMETERS:
BIAS CONDITION: VCE = 8 V, IC = 40 mA
S-MATRIX:
ZS = 50.0 + J 0.0
ZL = 50.0 + J 0.0
(NOTE: S-Parameters were taken in a ceramic Micro-X package; See package outline 35, 36)
FREQ.
GHz
S11
S21
S12
S22
S21
Ang dB
Mag
Ang Mag
Ang Mag
Ang Mag
0.20000
0.40000
0.60000
0.80000
1.00000
1.20000
1.40000
1.60000
1.80000
2.00000
2.20000
2.40000
2.60000
2.80000
3.00000
3.20000
3.40000
3.60000
3.80000
4.00000
4.20000
0.4027
0.4786
0.4731
0.4623
0.4365
0.4168
0.4365
0.5623
0.5370
0.5495
0.5888
0.5888
0.6237
0.6382
0.6382
0.6531
0.6606
0.7079
0.6606
0.6606
0.6760
-100
18.30
14.45
10.71
8.317
6.998
5.888
5.128
4.466
4.120
3.935
3.715
3.235
3.090
2.884
2.630
2.454
2.317
2.290
2.089
2.065
1.949
141
122
106
88
94
88
86
83
81
77
72
70
68
65
63
61
60
56
54
53
49
0.0208
63
60
62
66
69
70
71
72
70
68
70
72
73
74
73
73
75
74
74
77
74
0.5370
-40
-53
-55
-58
-52
-54
-67
-65
-70
25.25
23.20
20.6
18.4
16.9
15.4
14.2
13.0
12.3
11.9
11.4
10.2
9.8
9.2
8.4
7.8
7.3
7.2
6.4
6.3
5.8
-138
-163
-164
-170
174
173
168
155
150
140
135
133
128
127
123
120
114
111
113
106
0.0346
0.0436
0.0524
0.0602
0.0707
0.0794
0.0901
0.1035
0.1148
0.1230
0.1288
0.1428
0.1513
0.1584
0.1659
0.1737
0.1862
0.1862
0.1995
0.2187
0.4120
0.2754
0.2570
0.2137
0.2238
0.1883
0.1757
0.1862
0.1548
0.1318
0.1135
0.1258
0.1148
0.1202
0.1202
0.1148
0.1412
0.1380
0.1513
0.1737
-69
-84
-98
-100
-109
-116
-128
-134
-145
-158
-143
-156
PAGE 5
BIPOLARICS,INC.
Part Number B12V114
NPN LOW NOISE SILICON MICROWAVE TRANSISTOR
04 Package: 0.145" Plastic X-PAC
86 Package: 0.085" Plastic,Surface Mount
0.02
.51
1
2
4
0.106+0.015
2.67+0.38
3
0.032+0.015
2.34+0.38
.020+.010
0.51+.25
0.008+0.002
0.203+0.051
0.026+0.001
0.66+0.13
0.060+0.01
1.52+0.25
0.085+0.005
2.16+0.13
85 Package: 0.085" Plastic Micro-X
87 Package: 0.085" Plastic,Short Lead
.020
.51
4
1
3
2
.065
2.15
.60+0.10
1.52+.26
.008+.002
.20+.050
5
.215+.010
5.46+.25
.020
.51
PAGE 6
BIPOLARICS,INC.
Part Number B12V114
NPN LOW NOISE SILICON MICROWAVE TRANSISTOR
02 Package: SOT-23
02 Package: SOT-23J
0.30
0.51
1.39
1.57
2.25
2.75
0.45
0.60
0.95
1.90
2.65
3.04
0.79
1.1
0.00
0.10
0.10
0.45
0.60
92 Package: TO-92
PAGE 7
BIPOLARICS,INC.
Part Number B12V114
NPN LOW NOISE SILICON MICROWAVE TRANSISTOR
ORDERING INFORMATION:
-05 Package: Micro-X 0.085" Hermetic
P/N Including Pkg Temp Range/App
B12V114 00
B12V114 02
B12V114 14
B12V114 35
B12V114 92
-55 to +125˚C
-40 to +85˚C
-40 to +85˚C
-55 to +125˚C
-40 to +85˚C
NOTES: (unless otherwise specified)
in
1. Dimensions are
(mm)
2. Tolerances:
in .xxx = ± .005
mm .xx = ± .13
3. All dimensions nominal; subject to change
without notice
BIPOLARICS, INC.
46766 Lakeview Blvd.
Fremont, CA 94538
Phone: (510)226-6565 FAX: (510) 226-6765
LEAD
1
2
3
4
14, 85, 86, 87, 35,
36 & 04 Packages
Base
Emitter Collector Emitter
相关型号：
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