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BAV70-BOX(SUPPLIEDREELOF3K) [ETC]

DIODE KLEINSIGNAL 3000ST R. DURCHM.180MM Inhalt pro Packung: 3000 Stk. ; 二极管KLEINSIGNAL 3000ST R. DURCHM.180MM Inhalt亲Packung ： 3000 Stk阅读。\n
BAV70-BOX(SUPPLIEDREELOF3K)
型号： BAV70-BOX(SUPPLIEDREELOF3K)
厂家： ETC    ETC
描述：

DIODE KLEINSIGNAL 3000ST R. DURCHM.180MM Inhalt pro Packung: 3000 Stk.
二极管KLEINSIGNAL 3000ST R. DURCHM.180MM Inhalt亲Packung ： 3000 Stk阅读。\n

二极管
文件： 总4页 (文件大小：98K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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Silicon Switching Diode Array  
BAV 70  
● For high-speed switching  
● Common cathode  
2
3
1
Package1)  
Type  
Marking  
Ordering Code  
(tape and reel)  
Pin Configuration  
BAV 70  
A4s  
Q68000-A6622  
SOT-23  
Maximum Ratings per Diode  
Parameter  
Symbol  
Values  
Unit  
Reverse voltage  
V
R
70  
V
Peak reverse voltage  
Forward current  
V
RM  
70  
IF  
200  
mA  
A
Surge forward current, t = 1 µs  
IFS  
4.5  
Total power dissipation, T  
S
= 35 ˚C  
P
tot  
250  
mW  
˚C  
Junction temperature  
T
j
150  
Storage temperature range  
Tstg  
– 65 … + 150  
Thermal Resistance  
Junction - ambient2)  
R
th JA  
th JS  
≤ 600  
≤ 460  
K/W  
Junction - soldering point  
R
1)  
For detailed information see chapter Package Outlines.  
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2.  
2)  
5.91  
Semiconductor Group  
164  
BAV 70  
Electrical Characteristics per Diode  
at T = 25 ˚C, unless otherwise specified.  
A
Parameter  
Symbol  
Values  
typ.  
Unit  
min.  
max.  
DC characteristics  
Breakdown voltage  
V
(BR)  
F
70  
–
–
V
I(BR) = 100 µA  
Forward voltage  
V
mV  
IF  
IF  
IF  
IF  
= 1 mA  
= 10 mA  
= 50 mA  
= 150 mA  
–
–
–
–
–
–
–
–
715  
855  
1000  
1250  
Reverse current  
IR  
µA  
VR  
VR  
VR  
= 70 V  
= 25 V, T  
= 70 V, T  
–
–
–
–
–
–
2.5  
30  
50  
A
A
= 150 ˚C  
= 150 ˚C  
AC characteristics  
Diode capacitance  
C
D
–
–
–
–
1.5  
6
pF  
ns  
VR  
= 0 V, f = 1 MHz  
Reverse recovery time  
= 10 mA, I = 10 mA, R  
measured at I = 1 mA  
t
rr  
IF  
R
L
= 100 Ω  
R
Test circuit for reverse recovery time  
Pulse generator: t  
p
r
= 100 ns, D = 0.05  
= 0.6 ns, R = 50 Ω  
Oscillograph: R = 50 Ω  
= 0.35 ns  
C ≤ 1 pF  
t
j
t
r
Siemens Aktiengesellschaft  
165  
BAV 70  
Forward current I  
F
= f (T  
A
*; TS  
)
Reverse current I  
R
= f (T )  
A
* Package mounted on epoxy  
Forward current I  
F
= f (V  
F
)
Peak forward current IFM = f (t)  
= 25 ˚C  
T
A
= 25 ˚C  
TA  
Siemens Aktiengesellschaft  
166  
BAV 70  
Forward voltage V  
F
= f (T )  
A
Siemens Aktiengesellschaft  
167  

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