BC547B/E7
更新时间：2024-09-18 02:56:02
品牌：ETC
描述：TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 100MA I(C) | TO-92
概述
数据手册BC547B/E7 概述
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 100MA I(C) | TO-92
晶体管| BJT | NPN | 45V V（ BR ） CEO | 100MA I（C ） | TO- 92\n
BC547B/E7 数据手册
通过下载BC547B/E7数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载BC546 thru BC548
Vishay Semiconductors
formerly General Semiconductor
Small Signal Transistors (NPN)
TO-226AA (TO-92)
Features
• NPN Silicon Epitaxial Planar Transistors
0.142 (3.6)
0.181 (4.6)
• These transistors are subdivided into three groups
A, B, and C according to their current gain.
The type BC546 is available in groups A and B,
however, the types BC547 and BC548 can be
supplied in all three groups. As complementary
types the PNP transistors BC556...BC558 are
recommended.
• On special request, these transistors are also
manufactured in the pin configuration TO-18.
Mechanical Data
Case: TO-92 Plastic Package
Weight: approx. 0.18g
max.
0.022 (0.55)
Packaging Codes/Options:
E6/Bulk – 5K per container, 20K/box
E7/4K per Ammo mag., 20K/box
0.098 (2.5)
Dimensions in inches
and (millimeters)
Bottom
View
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
BC546
BC547
BC548
80
50
30
Collector-Base Voltage
VCBO
V
BC546
BC547
BC548
80
50
30
Collector-Emitter Voltage
VCES
V
BC546
BC547
BC548
65
45
30
Collector-Emitter Voltage
Emitter-Base Voltage
VCEO
V
V
BC546, BC547
BC548
6
5
VEBO
Collector Current
IC
ICM
IBM
-IEM
Ptot
RΘJA
Tj
100
200
mA
mA
mA
mA
mW
°C/W
°C
Peak Collector Current
Peak Base Current
200
Peak Emitter Current
Power Dissipation at Tamb = 25°C
200
500(1)
250(1)
150
Thermal Resistance Junction to Ambient Air
Junction Temperature
Storage Temperature Range
TS
–65 to +150
°C
Note: (1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
Document Number 88160
08-May-02
www.vishay.com
1
BC546 thru BC548
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics(TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Current gain group A
—
—
—
220
330
600
—
—
—
VCE = 5 V, IC = 2 mA,
f = 1 kHz
Small Signal Current Gain
B
C
hfe
—
Current gain group A
1.6
3.2
6
2.7
4.5
8.7
4.5
8.5
15
VCE = 5 V, IC = 2 mA,
f = 1 kHz
Input Impedance
B
C
hie
hoe
hre
kΩ
µS
—
Current gain group A
—
—
—
18
30
60
30
60
110
VCE = 5 V, IC = 2 mA,
f = 1kHz
Output Admittance
B
C
Current gain group A
—
—
—
1.5 • 10-4
2 • 10-4
3 • 10-4
—
—
—
VCE = 5 V, IC = 2 mA,
f = 1kHz
Reverse Voltage Transfer Ratio
B
C
Current gain group A
—
—
—
90
150
270
—
—
—
B
C
VCE = 5 V, IC = 10 µA
Current gain group A
110
200
420
180
290
500
220
450
800
DC Current Gain
B
C
hFE
VCE = 5 V, IC = 2 mA
—
Current gain group A
—
—
—
120
200
400
—
—
—
B
C
V
CE = 5 V, IC = 100 mA
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
—
—
80
200
200
600
Collector Saturation Voltage
Base Saturation Voltage
Base-Emitter Voltage
VCEsat
VBEsat
VBE
mV
mV
mV
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
—
—
700
900
—
—
VCE = 5 V, IC = 2 mA
VCE = 5 V, IC = 10 mA
580
—
660
—
700
720
BC546
BC547
BC548
BC546
BC547
BC548
VCE = 80 V
—
—
—
—
—
—
0.2
0.2
0.2
—
—
—
15
15
15
4
4
4
nA
nA
nA
µA
µA
µA
V
CE = 50 V
Collector-Emitter
Cutoff Current
ICES
VCE = 30 V
V
V
CE = 80 V, Tj = 125°C
CE = 50 V, Tj = 125°C
VCE = 30 V, Tj = 125°C
VCE = 5 V, IC = 10 mA,
f = 100 MHz
Gain-Bandwidth Product
fT
—
300
—
MHz
Collector-Base Capacitance
Emitter-Base Capacitance
CCBO
CEBO
VCB = 10 V, f = 1 MHz
VEB = 0.5 V, f = 1 MHz
—
—
3.5
9
6
pF
pF
—
V
R
CE = 5 V, IC = 200 µA,
G = 2 kΩ, f = 1 kHz,
BC546, BC547
BC548
Noise Figure
F
—
2
10
dB
∆f = 200 Hz
www.vishay.com
2
Document Number 88160
08-May-02
BC546 thru BC548
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Document Number 88160
08-May-02
www.vishay.com
3
BC546 thru BC548
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
www.vishay.com
4
Document Number 88160
08-May-02
BC546 thru BC548
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Document Number 88160
08-May-02
www.vishay.com
5
BC547B/E7 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| BC547B/L34Z | FAIRCHILD | 500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 | 获取价格 |
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| BC547B/RR | ETC | TRANSISTOR BIPOLAR | 获取价格 |
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| BC547B18 | MOTOROLA | Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon | 获取价格 |
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| BC547BA3 | CYSTEKEC | General Purpose NPN Epitaxial Planar Transistor | 获取价格 |
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| BC547BA3-0-BK-G | CYSTEKEC | General Purpose NPN Epitaxial Planar Transistor | 获取价格 |
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| BC547BA3-0-TB-G | CYSTEKEC | General Purpose NPN Epitaxial Planar Transistor | 获取价格 |
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| BC547BBK | DIOTEC | Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3 | 获取价格 |
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| BC547BBU | ONSEMI | NPN Epitaxial Silicon Transistor, 10000-BLKBG | 获取价格 |
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| BC547BD | ZETEX | Transistor | 获取价格 |
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