概述
数据手册BCR5PM-14 概述
BCR5PM-14 Datasheet 253K/MAR.20.03
BCR5PM - 14数据表253K / MAR.20.03\n
BCR5PM-14 数据手册
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Regarding the change of names mentioned in the document, such as Mitsubishi
Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been
made to the contents of the document, and these changes do not constitute any alteration to the
contents of the document itself.
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices
and power devices.
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR5PM-14
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
Dimensions
BCR5PM-14
OUTLINE DRAWING
in mm
10.5 MAX
2.8
5.2
TYPE
NAME
φ3.2 0.2
1.3 MAX
VOLTAGE
CLASS
0.8
2.54
2.54
0.5
2.6
• IT (RMS) ........................................................................ 5A
• VDRM ....................................................................... 700V
• IFGT !, IRGT !, IRGT # ............................................30mA
• Viso ........................................................................ 2000V
• UL Recognized: Yellow Card No.E80276(N)
File No. E80271
∗ Measurement point of
case temperature
1 2 3
2
1
T
T
1
2
TERMINAL
TERMINAL
1
2
3
3
GATE TERMINAL
TO-220F
APPLICATION
Switching mode power supply, washing machine, small motor control, copying machine, other general
purpose control applications
MAXIMUM RATINGS
Voltage class
Symbol
Parameter
Unit
14
✽1
VDRM
VDSM
Repetitive peak off-state voltage
700
840
V
V
✽1
Non-repetitive peak off-state voltage
Symbol
Parameter
RMS on-state current
Surge on-state current
Conditions
Ratings
Unit
A
IT (RMS)
ITSM
Commercial frequency, sine full wave 360° conduction, Tc=95°C
5
60Hz sinewave 1 full cycle, peak value, non-repetitive
50
A
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
2
2
2
I t
I t for fusing
10.4
A s
PGM
PG (AV)
VGM
IGM
Tj
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
3
W
W
V
0.3
10
Peak gate current
2
A
Junction temperature
Storage temperature
Weight
–40 ~ +125
–40 ~ +125
2.0
°C
°C
g
Tstg
—
Typical value
Viso
Isolation voltage
Ta=25°C, AC 1 minute, T1 · T2 · G terminal to case
2000
V
✽1. Gate open.
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR5PM-14
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Limits
Unit
Symbol
Parameter
Test conditions
Tj=125°C, VDRM applied
Min.
—
Typ.
—
—
—
—
—
—
—
—
—
—
Max.
2.0
1.8
1.5
1.5
1.5
30
mA
V
IDRM
Repetitive peak off-state current
On-state voltage
—
VTM
Tc=25°C, ITM=7A, Instantaneous measurement
!
@
#
!
@
#
—
V
VFGT !
VRGT !
VRGT #
IFGT !
IRGT !
IRGT #
VGD
✽2
—
V
Gate trigger voltage
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
—
V
—
mA
mA
mA
V
✽2
—
30
Gate trigger current
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
Tj=125°C, VD=1/2VDRM
—
30
0.2
—
—
Gate non-trigger voltage
Thermal resistance
✽3
4.0
°C/W
Rth (j-c)
Junction to case
✽4
Critical-rate of rise of off-state
commutating voltage
—
—
V/µs
(dv/dt)c
5
Tj=125°C
✽2. Measurement using the gate trigger characteristics measurement circuit.
✽3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
✽4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Commutating voltage and current waveforms
(inductive load)
Test conditions
SUPPLY
VOLTAGE
1. Junction temperature
Tj=125°C
TIME
2. Rate of decay of on-state commutating current
(di/dt)c=–2.5A/ms
(di/dt)c
MAIN CURRENT
TIME
TIME
MAIN
VOLTAGE
3. Peak off-state voltage
VD=400V
(dv/dt)c
VD
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
RATED SURGE ON-STATE CURRENT
102
7
100
90
80
70
60
50
40
30
20
10
0
5
3
2
101
7
5
3
2
Tj = 125°C
100
7
5
3
2
Tj = 25°C
10–1
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
100
2
3 4 5 7 101
2
3 4 5 7 102
ON-STATE VOLTAGE (V)
CONDUCTION TIME
(CYCLES AT 60Hz)
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR5PM-14
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
GATE CHARACTERISTICS
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
103
(Ι, ΙΙ AND ΙΙΙ)
102
7
TYPICAL EXAMPLE
7
5
5
3
2
V
GM = 10V
IRGT I, IRGT III
3
2
101
7
5
3
2
PGM = 3W
P
G(AV) =
102
0.3W
IGM = 2A
V
GT = 1.5V
7
5
IFGT I
100
7
5
3
2
IFGT I
IRGT I
IRGT III
3
2
V
GD = 0.2V
10–1
101
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
–60–40–20 0 20 40 60 80 100120140
GATE CURRENT (mA)
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
102 2 3 5 7 103 2 3
5
103
4.0
TYPICAL EXAMPLE
7
5
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
3
2
102
7
5
3
2
101
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
–60–40–20 0 20 40 60 80 100120140
JUNCTION TEMPERATURE (°C)
CONDUCTION TIME
(CYCLES AT 60Hz)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO AMBIENT)
MAXIMUM ON-STATE POWER
DISSIPATION
103
10
7
5
NO FINS
9
8
7
6
5
4
3
2
1
0
3
2
102
7
360°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
5
3
2
101
7
5
3
2
100
7
5
3
2
10–1
1012 3 571022 3 571032 3 571042 3 57105
0
1
2
3
4
5
6
7
8
9 10
CONDUCTION TIME
(CYCLES AT 60Hz)
RMS ON-STATE CURRENT (A)
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR5PM-14
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
140
120
100
80
160
ALL FINS ARE BLACK PAINTED
ALUMINUM AND GREASED
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
140
120 120 t2.3
120
100 100 t2.3
100
60 60 t2.3
80
60
60
360°
NATURAL
CONVECTION
CURVES APPLY
REGARDLESS OF
CONDUCTION ANGLE
40
40
20
0
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
RESISTIVE,
INDUCTIVE
LOADS
20
0
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
RMS ON-STATE CURRENT (A)
RMS ON-STATE CURRENT (A)
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
105
7
NATURAL CONVECTION
NO FINS
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
RESISTIVE INDUCTIVE LOADS
TYPICAL EXAMPLE
5
140
120
100
80
3
2
104
7
5
3
2
60
103
7
5
40
3
2
20
0
102
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
RMS ON-STATE CURRENT (A)
–60–40–20 0 20 40 60 80 100120140
JUNCTION TEMPERATURE (°C)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
LACHING CURRENT VS.
JUNCTION TEMPERATURE
103
7
103
7
5
TYPICAL EXAMPLE
T +
EXAMPLE
2
, G– TYPICAL
DISTRIBUTION
5
3
2
4
T –, G– TYPICAL
EXAMPLE
2
3
2
102
7
5
102
7
3
2
101
7
5
4
5
3
2
3
2
T +
2
, G+
TYPICAL EXAMPLE
–60–40–20 0 20 40 60 80 100120140
101
100
–60–40–20 0 20 40 60 80 100120140
JUNCTION TEMPERATURE (°C)
JUNCTION TEMPERATURE (°C)
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR5PM-14
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
OFF-STATE VOLTAGE
160
140
120
100
80
160
TYPICAL EXAMPLE
TYPICAL EXAMPLE
Tj = 125°C
140
120
100
80
III QUADRANT
60
60
I QUADRANT
40
40
20
20
0
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
–60–40–20 0 20 40 60 80 100120140
JUNCTION TEMPERATURE (°C)
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
COMMUTATION CHARACTERISTICS
102
103
SUPPLY
TYPICAL
EXAMPLE
TYPICAL EXAMPLE
FGT I
TIME
(di/dt)c
I
VOLTAGE
7
5
7
5
MAIN CURRENT
I
RGT I
RGT III
TIME
T
j
= 125°C
= 4A
MAIN
VOLTAGE
(dv/dt)c
TIME
I
T
I
3
2
3
2
V
D
τ = 500µs
= 200V
f = 3Hz
V
D
101
102
7
5
7
5
MINIMUM
CHARAC-
TERISTICS
VALUE
I QUADRANT
3
2
3
2
III QUADRANT
5 7 101
100
101
100
2
3
2
3
5 7 102
100
2
3
5 7 101
2
3
5 7 102
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
GATE CURRENT PULSE WIDTH (µs)
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
6Ω 6Ω
A
A
6V
6V
R
G
RG
V
V
TEST PROCEDURE 1 TEST PROCEDURE 2
6Ω
A
6V
R
G
V
TEST PROCEDURE 3
Mar. 2002
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