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BCW60A/E9 [ETC]

TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 100MA I(C) | SOT-23 ; 晶体管| BJT | NPN | 32V V（ BR ） CEO | 100MA I（C ） | SOT- 23\n
BCW60A/E9
型号： BCW60A/E9
厂家： ETC    ETC
描述：

TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 100MA I(C) | SOT-23
晶体管| BJT | NPN | 32V V（ BR ） CEO | 100MA I（C ） | SOT- 23\n

晶体 晶体管
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中文：  中文翻译
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BCW60 Series  
New Product  
Vishay Semiconductors  
formerly General Semiconductor  
Small Signal Transistors (NPN)  
TO-236AB (SOT-23)  
.122 (3.1)  
.110 (2.8)  
.016 (0.4)  
Mounting Pad Layout  
Top View  
3
0.031 (0.8)  
Pin Configuration  
1. Base 2. Emitter  
0.035 (0.9)  
1
2
3. Collector  
0.079 (2.0)  
.037(0.95)  
.037(0.95)  
0.037 (0.95)  
0.037 (0.95)  
.102 (2.6)  
.094 (2.4)  
.016 (0.4) .016 (0.4)  
Mechanical Data  
Dimensions in inches and (millimeters)  
Case: SOT-23 Plastic Package  
Weight: approx. 0.008g  
Features  
Marking  
Code:  
BCW60A = AA  
BCW60B = AB  
BCW60C = AC  
BCW60D = AD  
• NPN Silicon Epitaxial Planar Transistors  
• Suited for low level, low noise, low  
frequency applications in hybrid cicuits.  
• Low Current, Low Voltage.  
Packaging Codes/Options:  
• As complementary types, BCW61 Series PNP  
transistors are recommended.  
E8/10K per 13” reel (8mm tape), 30K/box  
E9/3K per 7” reel (8mm tape), 30K/box  
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
Parameter  
Symbol  
VCES  
VCEO  
VEBO  
IC  
Value  
Unit  
Collector-Emitter Voltage (VBE=0)  
Collector-Emitter Voltage  
Emitter-Base Voltage  
32  
V
32  
V
5.0  
V
Collector Current (DC)  
100  
mA  
mA  
mA  
mW  
°C  
Peak Collector Current  
ICM  
200  
Base Current (DC)  
IB  
50  
Power Dissipation  
Ptot  
250  
Maximum Junction Temperature  
Storage Temperature Range  
Thermal Resistance Junction to Ambient Air  
Tj  
150  
TS  
–65 to +150  
500(1)  
°C  
RΘJA  
°C/W  
Note:  
(1) Mounted on FR-4 printed-ciruit board.  
Document Number 88170  
09-May-02  
www.vishay.com  
1
BCW60 Series  
Vishay Semiconductors  
formerly General Semiconductor  
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
Parameter  
Symbol  
Min.  
TYP.  
Max.  
Unit  
DC Current Gain  
at VCE = 5V, IC = 10 µA  
at VCE = 5V, IC = 10 µA  
at VCE = 5V, IC = 10 µA  
at VCE = 5V, IC = 10 µA  
BCW60A  
BCW60B  
BCW60C  
BCW60D  
hFE  
hFE  
hFE  
hFE  
–
20  
40  
100  
–
–
–
–
–
–
–
–
–
–
–
–
at VCE = 5V, IC = 2 mA  
at VCE = 5V, IC = 2 mA  
at VCE = 5V, IC = 2 mA  
at VCE = 5V, IC = 2 mA  
BCW60A  
BCW60B  
BCW60C  
BCW60D  
hFE  
hFE  
hFE  
hFE  
120  
180  
250  
380  
–
–
–
–
220  
310  
460  
630  
–
–
–
–
at VCE = 1V, IC = 50 mA  
at VCE = 1V, IC = 50 mA  
at VCE = 1V, IC = 50 mA  
at VCE = 1V, IC = 50 mA  
BCW60A  
BCW60B  
BCW60C  
BCW60D  
hFE  
hFE  
hFE  
hFE  
50  
70  
90  
–
–
–
–
–
–
–
–
–
–
–
–
100  
Collector-Emitter Saturation Voltage  
at IC = 10 mA, IB = 0.25 mA  
at IC = 50 mA, IB = 1.25 mA  
VCEsat  
VCEsat  
50  
100  
–
–
350  
550  
mV  
mV  
Base-Emitter Saturation Voltage  
at IC = 10 mA, IB = 0.25 mA  
at IC = 50 mA, IB = 1.25 mA  
VBEsat  
VBEsat  
600  
700  
–
–
850  
1050  
mV  
mV  
Base-Emitter Voltage  
at VCE = 5V, IC = 2 mA  
at VCE = 5V, IC = 10 µA  
at VCE = 1V, IC = 50 mA  
VBE  
VBE  
VBE  
550  
–
–
650  
520  
780  
750  
–
–
mV  
mV  
mV  
Collector-Emitter Cut-off Current  
at VCE = 32V, VBE = 0V  
at VCE = 32V, VBE = 0V, TA = 150°C  
ICES  
–
–
–
–
20  
20  
nA  
µA  
Emitter-Base Cut-off Current  
at VEB = 4V, IC = 0  
IEBO  
–
–
20  
nA  
Gain-Bandwidth Product  
at VCE = 5V, IC = 10 mA, f = 100 MHz  
fT  
100  
–
250  
2.5  
8
–
–
–
MHz  
pF  
Collector-Base Capacitance  
at VCB = 10V, f = 1 MHZ, IE=0  
CCBO  
Emitter-Base Capacitance  
at VEB = 0.5V, f = 1 MHZ, IC=0  
CEBO  
–
pF  
Noise Figure  
at VCE = 5V, IC = 200 µA, RS = 2 kΩ, f = 1kHz, B = 200Hz  
F
–
2
6
dB  
Small Signal Current Gain  
at VCE = 5V, IC = 2 mA, f = 1.0 kHZ  
BCW60A  
BCW60B  
BCW60C  
BCW60D  
–
–
–
–
200  
260  
330  
520  
hfe  
Turn-on Time at RL = 990Ω (see fig. 1)  
VCC = 10V, Ic = 10mA, IB(on) = –IB(off) = 1mA  
ton  
toff  
–
–
85  
150  
800  
ns  
ns  
Turn-off Time at RL = 990Ω (see fig. 1)  
VCC = 10V, Ic = 10mA, IB(on) = –IB(off) = 1mA  
480  
www.vishay.com  
2
Document Number 88170  
09-May-02  
BCW60 Series  
Vishay Semiconductors  
formerly General Semiconductor  
Fig. 1 - Switching Waveforms  
INPUT  
90%  
10%  
t
t
on  
off  
10%  
90%  
90%  
10%  
OUTPUT  
t
t
t
t
r
s
d
f
Document Number 88170  
09-May-02  
www.vishay.com  
3

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