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BLC8G27LS-210PVY [ETC]

RF FET LDMOS 65V 17DB SOT12513;
BLC8G27LS-210PVY
型号： BLC8G27LS-210PVY
厂家： ETC    ETC
描述：

RF FET LDMOS 65V 17DB SOT12513
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BLC8G27LS-210PV  
Power LDMOS transistor  
Rev. 4 — 24 November 2017  
Product data sheet  
1. Product profile  
1.1 General description  
200 W LDMOS power transistor with improved video bandwidth for base station  
applications at frequencies from 2500 MHz to 2700 MHz.  
Table 1.  
Typical performance  
Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.  
Test signal  
f
IDq  
VDS PL(AV)  
Gp  
(dB) (%)  
17 30  
D  
ACPR5M  
(dBc)  
29 [1]  
(MHz)  
(mA)  
1730  
(V)  
(W)  
2-carrier W-CDMA  
2600 to 2700  
28  
65  
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF per carrier;  
5 MHz carrier spacing.  
1.2 Features and benefits  
Excellent ruggedness  
High efficiency  
Low thermal resistance providing excellent thermal stability  
Decoupling leads to enable improved video bandwidth performance (150 MHz typical)  
Designed for broadband operation (2500 MHz to 2700 MHz)  
Lower output capacitance for improved performance in Doherty applications  
Designed for low memory effects providing excellent pre-distortability  
Internally matched for ease of use  
Integrated ESD protection  
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances  
(RoHS)  
1.3 Applications  
RF power amplifiers for base stations and multi carrier applications in the  
2500 MHz to 2700 MHz frequency range  
BLC8G27LS-210PV  
Power LDMOS transistor  
2. Pinning information  
Table 2.  
Pinning  
Pin Description  
Simplified outline  
Graphic symbol  
1
2
3
4
5
6
7
8
9
drain2  
6
2
1
9
5
8
2
drain1  
6
gate1  
7
3
5
4
gate2  
7
3
4
[1]  
source  
8
video decoupling drain1  
9
n.c.  
1
n.c.  
aaa-009150  
video decoupling drain2  
[1] Connected to flange.  
3. Ordering information  
Table 3.  
Ordering information  
Type number  
Package  
Name Description  
Version  
BLC8G27LS-210PV  
-
air cavity plastic earless flanged package; 8 leads  
SOT1251-1  
4. Limiting values  
Table 4.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
VDS  
Parameter  
Conditions  
Min  
Max  
Unit  
V
drain-source voltage  
gate-source voltage  
storage temperature  
junction temperature  
-
65  
VGS  
Tstg  
0.5 +13  
V
65  
+150 C  
[1]  
Tj  
-
225  
C  
[1] Continuous use at maximum temperature will affect the reliability, for details refer to the online MTF  
calculator.  
5. Thermal characteristics  
Table 5.  
Symbol Parameter  
Rth(j-c) thermal resistance from junction to case Tcase = 80 C; PL = 65 W  
Thermal characteristics  
Conditions  
Typ  
Unit  
0.22 K/W  
BLC8G27LS-210PV  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2017. All rights reserved.  
Product data sheet  
Rev. 4 — 24 November 2017  
2 of 16  
BLC8G27LS-210PV  
Power LDMOS transistor  
6. Characteristics  
Table 6.  
DC characteristics  
Tj = 25 C per section, unless otherwise specified.  
Symbol Parameter  
Conditions  
Min Typ  
65  
Max Unit  
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 1.44 mA  
-
-
V
V
V
VGS(th)  
VGSq  
IDSS  
gate-source threshold voltage  
gate-source quiescent voltage  
drain leakage current  
VDS = 10 V; ID = 144 mA 1.5 1.9  
2.3  
2.4  
VDS = 28 V; ID = 865 mA 1.6  
2
VGS = 0 V; VDS = 28 V  
-
-
-
2.8 A  
IDSX  
drain cut-off current  
VGS = VGS(th) + 3.75 V;  
VDS = 10 V  
26.9  
-
A
IGSS  
gfs  
gate leakage current  
VGS = 11 V; VDS = 0 V  
VDS = 10 V; ID = 7.2 A  
-
-
-
-
280 nA  
forward transconductance  
11.2  
0.10  
-
-
S
RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V;  
ID = 5.4 A  
Table 7.  
RF characteristics  
Test signal: 2-carrier W-CDMA; 3GPP test model 1 with 64 DPCH; PAR = 8.4 dB at 0.01 %  
probability on the CCDF; f1 = 2602.5 MHz; f2 = 2607.5 MHz; f3 = 2692.5 MHz; f4 = 2697.5 MHz;  
RF performance at VDS = 28 V; IDq = 1730 mA; Tcase = 25 C; unless otherwise specified; in a water  
cooled class-AB test circuit.  
Symbol Parameter  
Conditions  
Min  
Typ  
Max Unit  
Gp  
power gain  
PL(AV) = 65 W  
PL(AV) = 65 W  
PL(AV) = 65 W  
15.8 17  
-
dB  
%
D  
drain efficiency  
input return loss  
27  
-
30  
-
RLin  
13  
29  
8  
26  
dB  
dBc  
ACPR5M adjacent channel power ratio (5 MHz) PL(AV) = 65 W  
-
7. Test information  
7.1 Ruggedness in class-AB operation  
The BLC8G27LS-210PV is capable of withstanding a load mismatch corresponding to  
VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V;  
IDq = 1730 mA; PL = 200 W (CW); f = 2600 MHz.  
7.2 Impedance information  
Table 8.  
Typical impedance  
Measured load-pull data per section; IDq = 865 mA; VDS = 28 V.  
[1]  
[1]  
f
ZS  
ZL  
(MHz)  
2500  
2600  
2700  
()  
()  
2.58 j5.80  
3.40 j6.30  
6.35 j6.45  
1.60 j4.32  
1.65 j4.44  
1.77 j4.75  
[1] ZS and ZL defined in Figure 1.  
BLC8G27LS-210PV  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2017. All rights reserved.  
Product data sheet  
Rev. 4 — 24 November 2017  
3 of 16  
BLC8G27LS-210PV  
Power LDMOS transistor  
drain  
Z
L
gate  
Z
S
001aaf059  
Fig 1. Definition of transistor impedance  
7.3 VBW in a class-AB operation  
The BLC8G27LS-210PV shows 150 MHz (typical) video bandwidth (IMD third-order  
intermodulation inflection point) in a class-AB test circuit in the 2.6 GHz to 2.7 GHz band  
at VDS = 28 V and IDq = 1.73 A.  
aaa-013023  
-10  
IMDD  
(dBc)  
-20  
(1))  
(2))  
IMDD33  
-30  
(1))  
(2))  
IMDD55  
-40  
(1))  
(2))  
-50  
-60  
-70  
IMDD77  
2
3
1
10  
10  
10  
carrier spacing (MHz)  
VDS = 28 V; IDq = 1730 mA.  
(1) low  
(2) high  
Fig 2. VBW capacity in class-AB test circuit  
BLC8G27LS-210PV  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2017. All rights reserved.  
Product data sheet  
Rev. 4 — 24 November 2017  
4 of 16  
BLC8G27LS-210PV  
Power LDMOS transistor  
7.4 Test circuit  
50 mm  
50 mm  
C6  
C9  
C8  
C11  
C7  
R1  
C13  
C10 C12  
C1  
R4  
R3  
C14  
60 mm  
C2  
C17  
R2  
C19  
C15  
C4  
C18 C16  
C3  
C5  
aaa-014685  
Printed-Circuit Board (PCB): Rogers 4350B with a thickness of 0.76 mm. See Table 9 for a list of  
components.  
Fig 3. Component layout  
Table 9.  
List of components  
See Figure 3 for component layout.  
Component  
Description  
Value  
Remarks  
ATC 800B  
ATC 800B  
Murata  
[1]  
[1]  
[2]  
[2]  
[2]  
[2]  
C1, C2  
multilayer ceramic chip capacitor 1.6 pF  
C3, C8, C10, C14, C18 multilayer ceramic chip capacitor 24 pF  
C4, C7  
multilayer ceramic chip capacitor 100 nF  
multilayer ceramic chip capacitor 1 F  
multilayer ceramic chip capacitor 470 F, 50 V  
multilayer ceramic chip capacitor 220 nF  
C5, C6  
Murata  
C9, C12, C16, C19  
C11, C17  
C13, C15  
R1, R2  
Murata  
Murata  
electrolytic capacitor  
chip resistor  
> 470 F, 63 V  
4.7 ,  
1 % tolerance  
SMD 0805  
SMD 0805  
SMD 2010  
R3  
R4  
chip resistor  
chip resistor  
10 ,  
1 % tolerance  
100 ,  
1 % tolerance  
[1] American Technical Ceramics type 800B or capacitor of same quality.  
[2] Murata or capacitor of same quality.  
BLC8G27LS-210PV  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2017. All rights reserved.  
Product data sheet  
Rev. 4 — 24 November 2017  
5 of 16  
BLC8G27LS-210PV  
Power LDMOS transistor  
7.5 Graphical data  
7.5.1 Pulsed CW  
aaa-013024  
aaa-013025  
19  
18  
17  
16  
15  
14  
60  
50  
40  
30  
20  
10  
0
G
η
D
(%)  
p
(dB)  
(3)  
(2)  
(3))  
(2))  
(1))  
(1)  
35  
39  
43  
47  
51  
55  
35  
39  
43  
47  
51  
55  
P
(dBm)  
P
(dBm)  
L
L
VDS = 28 V; IDq = 1730 mA; tp = 100 s; = 10 %.  
VDS = 28 V; IDq = 1730 mA; tp = 100 s; = 10 %.  
(1) f = 2600 MHz  
(2) f = 2650 MHz  
(3) f = 2700 MHz  
(1) f = 2600 MHz  
(2) f = 2650 MHz  
(3) f = 2700 MHz  
Fig 4. Power gain as a function of output power;  
typical values  
Fig 5. Drain efficiency as a function of out power;  
typical values  
BLC8G27LS-210PV  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2017. All rights reserved.  
Product data sheet  
Rev. 4 — 24 November 2017  
6 of 16  
BLC8G27LS-210PV  
Power LDMOS transistor  
7.5.2 IS-95  
aaa-013026  
aaa-013027  
20  
19  
18  
17  
16  
15  
40  
30  
20  
10  
0
G
η
D
(%)  
p
(dB)  
(3))  
(2))  
(1))  
(3))  
(2))  
(1))  
26  
30  
34  
38  
42  
46  
50  
34  
36  
38  
40  
42  
44  
46  
P (dBm)  
L
48  
50  
P
(dBm)  
L
VDS = 28 V; IDq = 1730 mA.  
VDS = 28 V; IDq = 1730 mA.  
(1) f = 2605 MHz  
(2) f = 2650 MHz  
(3) f = 2695 MHz  
(1) f = 2605 MHz  
(2) f = 2650 MHz  
(3) f = 2695 MHz  
Fig 6. Power gain as a function of output power;  
typical values  
Fig 7. Drain efficiency as a function of output power;  
typical values  
aaa-013092  
aaa-013093  
-30  
8855kk  
(dBc)  
-50  
ACPR  
AACPPR  
198800kk  
(dBc)  
-55  
-40  
-50  
-60  
-70  
-60  
-65  
-70  
-75  
-80  
(1))  
(2))  
(3))  
(1)  
(2)  
(3)  
34  
36  
38  
40  
42  
44  
46  
48  
50  
34  
36  
38  
40  
42  
44  
46 48  
P (dBm)  
L
50  
P
(dBm)  
L
VDS = 28 V; IDq = 1730 mA.  
VDS = 28 V; IDq = 1730 mA.  
(1) f = 2605 MHz  
(2) f = 2650 MHz  
(3) f = 2695 MHz  
(1) f = 2605 MHz  
(2) f = 2650 MHz  
(3) f = 2695 MHz  
Fig 8. Adjacent channel power ratio (885 kHz) as a  
function of output power; typical values  
Fig 9. Adjacent channel power ratio (1980 kHz) as a  
function of output power; typical values  
BLC8G27LS-210PV  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2017. All rights reserved.  
Product data sheet  
Rev. 4 — 24 November 2017  
7 of 16  
BLC8G27LS-210PV  
Power LDMOS transistor  
aaa-013094  
aaa-013096  
12  
10  
8
56  
PARR  
(dB)  
P
L(MM))  
(dBm)  
54  
52  
50  
48  
46  
(3)  
(2)  
(1)  
(3))  
(2))  
(1))  
6
4
34  
36  
38  
40  
42  
44  
46  
48  
50  
34  
36  
38  
40  
42  
44  
46  
P (dBm)  
L
48  
50  
P
(dBm)  
L
VDS = 28 V; IDq = 1730 mA.  
VDS = 28 V; IDq = 1730 mA.  
(1) f = 2605 MHz  
(2) f = 2650 MHz  
(3) f = 2695 MHz  
(1) f = 2605 MHz  
(2) f = 2650 MHz  
(3) f = 2695 MHz  
Fig 10. Peak-to-average ratio as a function of output  
power; typical values  
Fig 11. Peak output power as a function of output  
power; typical values  
7.5.3 1-Carrier W-CDMA  
aaa-013098  
aaa-013099  
20  
50  
G
η
D
(%)  
p
(dB)  
(1))  
(2))  
(3))  
19  
18  
17  
16  
15  
40  
30  
20  
10  
0
(3))  
(2))  
(1))  
36  
38  
40  
42  
44  
46  
48  
50  
52  
36  
38  
40  
42  
44  
46  
48  
P (dBm)  
L
50  
52  
P
(dBm)  
L
VDS = 28 V; IDq = 1730 mA.  
VDS = 28 V; IDq = 1730 mA.  
(1) f = 2602.5 MHz  
(2) f = 2650 MHz  
(3) f = 2697.5 MHz  
(1) f = 2602.5 MHz  
(2) f = 2650 MHz  
(3) f = 2697.5 MHz  
Fig 12. Power gain as a function of output power;  
typical values  
Fig 13. Drain efficiency as a function of output power;  
typical values  
BLC8G27LS-210PV  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2017. All rights reserved.  
Product data sheet  
Rev. 4 — 24 November 2017  
8 of 16  
BLC8G27LS-210PV  
Power LDMOS transistor  
aaa-013101  
aaa-013102  
8
7
6
5
4
3
30  
26  
22  
18  
14  
10  
PARR  
(dB)  
RL  
in  
(dB)  
(1)  
(2)  
(3)  
(2))  
(1))  
(3))  
36  
38  
40  
42  
44  
46  
48  
50  
52  
36  
38  
40  
42  
44  
46  
48  
P (dBm)  
L
50  
52  
P
(dBm)  
L
VDS = 28 V; IDq = 1730 mA.  
VDS = 28 V; IDq = 1730 mA.  
(1) f = 2602.5 MHz  
(2) f = 2650 MHz  
(3) f = 2697.5 MHz  
(1) f = 2602.5 MHz  
(2) f = 2650 MHz  
(3) f = 2697.5 MHz  
Fig 14. Peak-to-average ratio as a function of output  
power; typical values  
Fig 15. Input return loss as a function of output  
power; typical values  
7.5.4 2-Carrier W-CDMA  
aaa-013104  
aaa-013106  
20  
50  
G
η
D
(%)  
p
(dB)  
19  
18  
17  
16  
15  
40  
30  
20  
10  
0
(3))  
(2))  
(1))  
(3))  
(2))  
(1))  
36  
38  
40  
42  
44  
46  
48  
50  
52  
36  
38  
40  
42  
44  
46  
48  
P (dBm)  
L
50  
52  
P
(dBm)  
L
VDS = 28 V; IDq = 1730 mA.  
VDS = 28 V; IDq = 1730 mA.  
(1) f = 2605 MHz  
(2) f = 2650 MHz  
(3) f = 2695 MHz  
(1) f = 2605 MHz  
(2) f = 2650 MHz  
(3) f = 2695 MHz  
Fig 16. Power gain as a function of output power;  
typical values  
Fig 17. Drain efficiency as a function of output power;  
typical values  
BLC8G27LS-210PV  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2017. All rights reserved.  
Product data sheet  
Rev. 4 — 24 November 2017  
9 of 16  
BLC8G27LS-210PV  
Power LDMOS transistor  
aaa-013110  
30  
26  
22  
18  
14  
10  
RL  
in  
(dB)  
(2)  
(1)  
(3)  
36  
38  
40  
42  
44  
46  
48  
50  
52  
P
(dBm)  
L
VDS = 28 V; IDq = 1730 mA.  
(1) f = 2605 MHz  
(2) f = 2650 MHz  
(3) f = 2695 MHz  
Fig 18. Input return loss as a function of output power; typical values  
aaa-013111  
aaa-013112  
-20  
5M  
-20  
ACPR  
ACPR  
10MM  
(dBc)  
(dBc)  
-30  
-30  
-40  
-50  
-60  
(1)  
(2)  
(3)  
-40  
-50  
-60  
(1))  
(2))  
(3))  
34  
36  
38  
40  
42  
44  
46  
48  
50  
34  
36  
38  
40  
42  
44  
46 48  
P (dBm)  
L
50  
P
(dBm)  
L
VDS = 28 V; IDq = 1730 mA.  
VDS = 28 V; IDq = 1730 mA.  
(1) f = 2605 MHz  
(2) f = 2650 MHz  
(3) f = 2695 MHz  
(1) f = 2605 MHz  
(2) f = 2650 MHz  
(3) f = 2695 MHz  
Fig 19. Adjacent channel power ratio (5 MHz) as a  
function of output power; typical values  
Fig 20. Adjacent channel power ratio (10 MHz) as a  
function of output power; typical values  
BLC8G27LS-210PV  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2017. All rights reserved.  
Product data sheet  
Rev. 4 — 24 November 2017  
10 of 16  
BLC8G27LS-210PV  
Power LDMOS transistor  
8. Package outline  
Air cavity plastic earless flanged package; 8 leads  
SOT1251-1  
D
A
F
5
w
B
D
1
1
v
A
U
1
B
c
6
2
1
9
y
Į
H
H
1
U
Z
Z
1
E
1
E
2
A
7
8
3
4
e
Q
w
b
B
b
1
2
L
y
Į
Z
Z
1
0.1 65° 5.94 11.18  
61° 5.74 10.97  
0
10 mm  
scale  
Dimensions  
Unit  
(1)  
A
b
b
1
c
D
D
E
E
1
e
L
F
H
H
Q
U
U
v
w
w
2
1
1
1
2
1
max 4.65 1.12 11.78 0.2 31.44 31.34 9.60 9.50  
mm nom  
min 4.18 0.91 11.58 0.1 31.04 31.14 9.20 9.30  
36.42 1.83 16.71 15.85 2.33 32.33 10.23 0.5  
0.5  
0.5  
13.72  
36.22 1.63 16.51 15.65 2.13 32.13 10.03  
Note  
1. Dimension Q is measured 0.1 mm away from the flange.  
2. Ringframe and/or ringframe glue shall not overhang at the side of the flange.  
sot1251-1_po  
References  
Outline  
version  
European  
projection  
Issue date  
IEC  
JEDEC  
JEITA  
14-01-31  
17-08-31  
SOT1251-1  
Fig 21. Package outline SOT1251-1  
BLC8G27LS-210PV  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2017. All rights reserved.  
Product data sheet  
Rev. 4 — 24 November 2017  
11 of 16  
BLC8G27LS-210PV  
Power LDMOS transistor  
9. Handling information  
CAUTION  
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling  
electrostatic sensitive devices.  
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or  
equivalent standards.  
Table 10. ESD sensitivity  
ESD model  
Class  
C2A [1]  
3A [2]  
Charged Device Model (CDM); According to ANSI/ESDA/JEDEC standard JS-002  
Human Body Model (HBM); According to ANSI/ESDA/JEDEC standard JS-001  
[1] CDM classification C2A is granted to any part that passes after exposure to an ESD pulse of 500 V, but fails  
after exposure to an ESD pulse of 750 V.  
[2] HBM classification 3A is granted to any part that passes after exposure to an ESD pulse of 4000 V, but fails  
after exposure to an ESD pulse of 8000 V.  
10. Abbreviations  
Table 11. Abbreviations  
Acronym  
3GPP  
CCDF  
CW  
Description  
3rd Generation Partnership Project  
Complementary Cumulative Distribution Function  
Continuous Wave  
DPCH  
ESD  
Dedicated Physical CHannel  
ElectroStatic Discharge  
IS-95  
Interim Standard 95  
LDMOS  
MTF  
Laterally Diffused Metal Oxide Semiconductor  
Median Time to Failure  
PAR  
Peak-to-Average Ratio  
SMD  
Surface Mounted Device  
VBW  
Video BandWidth  
VSWR  
W-CDMA  
Voltage Standing Wave Ratio  
Wideband Code Division Multiple Access  
BLC8G27LS-210PV  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2017. All rights reserved.  
Product data sheet  
Rev. 4 — 24 November 2017  
12 of 16  
BLC8G27LS-210PV  
Power LDMOS transistor  
11. Revision history  
Table 12. Revision history  
Document ID  
Release date Data sheet status  
20171124 Product data sheet  
Change notice Supersedes  
BLC8G27LS-210PV v.4  
Modifications:  
-
BLC8G27LS-210PV v.3  
• Table 2 on page 2: changed simplified version drawing SOT1251-3 to  
SOT1251-1  
• Table 3 on page 2: changed version SOT1251-3 to SOT1251-1  
• Figure 21 on page 11: changed package outline drawing SOT1251-3 to  
SOT1251-1  
BLC8G27LS-210PV v.3  
BLC8G27LS-210PV v.2  
BLC8G27LS-210PV v.1  
20161202  
20150901  
20150209  
Product data sheet  
Product data sheet  
Product data sheet  
-
-
-
BLC8G27LS-210PV v.2  
BLC8G27LS-210PV v.1  
-
BLC8G27LS-210PV  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2017. All rights reserved.  
Product data sheet  
Rev. 4 — 24 November 2017  
13 of 16  
BLC8G27LS-210PV  
Power LDMOS transistor  
12. Legal information  
12.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.ampleon.com.  
Ampleon product can reasonably be expected to result in personal injury,  
12.2 Definitions  
death or severe property or environmental damage. Ampleon and its  
suppliers accept no liability for inclusion and/or use of Ampleon products in  
such equipment or applications and therefore such inclusion and/or use is at  
the customer’s own risk.  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. Ampleon does not give any representations or  
warranties as to the accuracy or completeness of information included herein  
and shall have no liability for the consequences of use of such information.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. Ampleon makes no representation  
or warranty that such applications will be suitable for the specified use without  
further testing or modification.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local Ampleon sales office. In  
case of any inconsistency or conflict with the short data sheet, the full data  
sheet shall prevail.  
Customers are responsible for the design and operation of their applications  
and products using Ampleon products, and Ampleon accepts no liability for  
any assistance with applications or customer product design. It is customer’s  
sole responsibility to determine whether the Ampleon product is suitable and  
fit for the customer’s applications and products planned, as well as for the  
planned application and use of customer’s third party customer(s). Customers  
should provide appropriate design and operating safeguards to minimize the  
risks associated with their applications and products.  
Product specification — The information and data provided in a Product  
data sheet shall define the specification of the product as agreed between  
Ampleon and its customer, unless Ampleon and customer have explicitly  
agreed otherwise in writing. In no event however, shall an agreement be valid  
in which the Ampleon product is deemed to offer functions and qualities  
beyond those described in the Product data sheet.  
Ampleon does not accept any liability related to any default, damage, costs or  
problem which is based on any weakness or default in the customer’s  
applications or products, or the application or use by customer’s third party  
customer(s). Customer is responsible for doing all necessary testing for the  
customer’s applications and products using Ampleon products in order to  
avoid a default of the applications and the products or of the application or  
use by customer’s third party customer(s). Ampleon does not accept any  
liability in this respect.  
12.3 Disclaimers  
Limited warranty and liability — Information in this document is believed to  
be accurate and reliable. However, Ampleon does not give any  
representations or warranties, expressed or implied, as to the accuracy or  
completeness of such information and shall have no liability for the  
consequences of use of such information. Ampleon takes no responsibility for  
the content in this document if provided by an information source outside of  
Ampleon.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those given in  
the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
In no event shall Ampleon be liable for any indirect, incidental, punitive,  
special or consequential damages (including - without limitation - lost profits,  
lost savings, business interruption, costs related to the removal or  
replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
contract or any other legal theory.  
Terms and conditions of commercial sale — Ampleon products are sold  
subject to the general terms and conditions of commercial sale, as published  
at http://www.ampleon.com/terms, unless otherwise agreed in a valid written  
individual agreement. In case an individual agreement is concluded only the  
terms and conditions of the respective agreement shall apply. Ampleon  
hereby expressly objects to applying the customer’s general terms and  
conditions with regard to the purchase of Ampleon products by customer.  
Notwithstanding any damages that customer might incur for any reason  
whatsoever, Ampleon’s aggregate and cumulative liability towards customer  
for the products described herein shall be limited in accordance with the  
Terms and conditions of commercial sale of Ampleon.  
No offer to sell or license — Nothing in this document may be interpreted or  
construed as an offer to sell products that is open for acceptance or the grant,  
conveyance or implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
Right to make changes — Ampleon reserves the right to make changes to  
information published in this document, including without limitation  
specifications and product descriptions, at any time and without notice. This  
document supersedes and replaces all information supplied prior to the  
publication hereof.  
Export control — This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from competent authorities.  
Suitability for use — Ampleon products are not designed, authorized or  
warranted to be suitable for use in life support, life-critical or safety-critical  
systems or equipment, nor in applications where failure or malfunction of an  
BLC8G27LS-210PV  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2017. All rights reserved.  
Product data sheet  
Rev. 4 — 24 November 2017  
14 of 16  
BLC8G27LS-210PV  
Power LDMOS transistor  
Non-automotive qualified products — Unless this data sheet expressly  
states that this specific Ampleon product is automotive qualified, the product  
is not suitable for automotive use. It is neither qualified nor tested in  
accordance with automotive testing or application requirements. Ampleon  
accepts no liability for inclusion and/or use of non-automotive qualified  
products in automotive equipment or applications.  
Translations — A non-English (translated) version of a document is for  
reference only. The English version shall prevail in case of any discrepancy  
between the translated and English versions.  
12.4 Trademarks  
In the event that customer uses the product for design-in and use in  
automotive applications to automotive specifications and standards, customer  
(a) shall use the product without Ampleon’s warranty of the product for such  
automotive applications, use and specifications, and (b) whenever customer  
uses the product for automotive applications beyond Ampleon’s specifications  
such use shall be solely at customer’s own risk, and (c) customer fully  
indemnifies Ampleon for any liability, damages or failed product claims  
resulting from customer design and use of the product for automotive  
applications beyond Ampleon’s standard warranty and Ampleon’s product  
specifications.  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
Any reference or use of any ‘NXP’ trademark in this document or in or on the  
surface of Ampleon products does not result in any claim, liability or  
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of  
the NXP group of companies and any reference to or use of the ‘NXP’  
trademarks will be replaced by reference to or use of Ampleon’s own  
trademarks.  
13. Contact information  
For more information, please visit: http://www.ampleon.com  
For sales office addresses, please visit: http://www.ampleon.com/sales  
BLC8G27LS-210PV  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2017. All rights reserved.  
Product data sheet  
Rev. 4 — 24 November 2017  
15 of 16  
BLC8G27LS-210PV  
Power LDMOS transistor  
14. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
1.1  
1.2  
1.3  
General description . . . . . . . . . . . . . . . . . . . . . 1  
Features and benefits. . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
2
3
4
5
6
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Thermal characteristics . . . . . . . . . . . . . . . . . . 2  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3  
7
7.1  
7.2  
7.3  
7.4  
7.5  
7.5.1  
7.5.2  
7.5.3  
7.5.4  
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 3  
Ruggedness in class-AB operation . . . . . . . . . 3  
Impedance information . . . . . . . . . . . . . . . . . . . 3  
VBW in a class-AB operation . . . . . . . . . . . . . . 4  
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Pulsed CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
IS-95. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
1-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 8  
2-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 9  
8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11  
Handling information. . . . . . . . . . . . . . . . . . . . 12  
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13  
9
10  
11  
12  
Legal information. . . . . . . . . . . . . . . . . . . . . . . 14  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
12.1  
12.2  
12.3  
12.4  
13  
14  
Contact information. . . . . . . . . . . . . . . . . . . . . 15  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© Ampleon Netherlands B.V. 2017.  
All rights reserved.  
For more information, please visit: http://www.ampleon.com  
For sales office addresses, please visit: http://www.ampleon.com/sales  
Date of release: 24 November 2017  
Document identifier: BLC8G27LS-210PV  

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