BLD6G21LS-50,112_技术文档

BLD6G21L-50; BLD6G21LS-50

TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty

transistor

Rev. 3 — 1 September 2015

Product data sheet

1. Product profile

1.1 General description

The BLD6G21L-50 and BLD6G21LS-50 incorporate a fully integrated Doherty solution

using Ampleon’s state of the art GEN6 LDMOS technology. This device is perfectly suited

for TD-SCDMA base station applications at frequencies from 2010 MHz to 2025 MHz. The

main and peak device, input splitter and output combiner are integrated in a single

package. This package consists of one gate and drain lead and two extra leads of which

one is used for biasing the peak amplifier and the other is not connected. It only requires

the proper input/output match and bias setting as with a normal class-AB transistor.

Table 1.

Typical performance

RF performance at T_h= 25 C.

Mode of operation

f

V_DSP_L(AV)

G_p

(dB) (%) (dBc)

14.5 43 24

_D

ACPR

P_L(3dB)

(W)

(MHz)

(V)

(W)

TD-SCDMA ^[1][2]

2010 to 2025

28

8

53

[1] Test signal: 6-carrier TD-SCDMA; PAR = 10.8 dB at 0.01 % probability on CCDF.

[2] I_Dq= 170 mA (main); V_GS(amp)peak= 0 V.

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

1.2 Features and benefits

 Typical TD-SCDMA performance at frequencies from 2010 MHz to 2025 MHz:

 Average output power = 8 W

 Power gain = 14.5 dB

 Efficiency = 43 %

 Fully optimized integrated Doherty concept:

 integrated asymmetrical power splitter at input

 integrated power combiner

 peak biasing down to 0 V

 low junction temperature

 high efficiency

 100 % peak power tested for guaranteed output power capability

BLD6G21L-50; BLD6G21LS-50

TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor

 Integrated ESD protection

 Good pair match (main and peak on the same chip)

 Independent control of main and peak bias

 Internally matched for ease of use

 Excellent ruggedness

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

 High efficiency RF power amplifiers with digital pre-distortion for TD-SCDMA multi

carrier applications in the 2010 MHz to 2025 MHz range.

2. Pinning information

Table 2.

BLD6G21L-50 (SOT1130A)

Pinning

Description

Simplified outline

Graphic symbol

1

2

3

4

5

drain

1

gate + bias main

source

[1]

2

5

n.c.

3

2

bias peak

001aak920

4

5

BLD6G21LS-50 (SOT1130B)

1

2

3

4

5

drain

1

3

1

2

gate + bias main

source

[1]

2

5

n.c.

3

bias peak

001aak920

4

5

[1] Connected to flange.

3. Ordering information

Table 3.

Ordering information

Type number

Package

Name Description

Version

BLD6G21L-50

-

flanged ceramic package; 2 mounting holes; 4 leads

earless flanged ceramic package; 4 leads

SOT1130A

SOT1130B

BLD6G21LS-50

BLD6G21L-50_BLD6G21LS-50#3

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 3 — 1 September 2015

2 of 15

BLD6G21L-50; BLD6G21LS-50

TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor

4. Block diagram

main

amplifier

2

RF-input/bias main

90°

1

RF-output/V

DS

peak

amplifier

5

bias peak

001aak932

Fig 1. Block diagram of BLD6G21L-50 and BLD6G21LS-50

5. Limiting values

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Valid for both main and peak device.

Symbol

Parameter

Conditions

Min Max

- 65

Unit

V

V_DS

drain-source voltage

main amplifier gate-source voltage

peak amplifier gate-source voltage

drain current

V_GS(amp)main

0.5 +13

V

V_GS(amp)peak

V

I_D

-

10.2

A

T_stg

T_j

storage temperature

junction temperature

65

+150 C

200 C

-

6. Thermal characteristics

Table 5.

Thermal characteristics

Symbol Parameter

Conditions

T_case= 80 C; P_L= 8 W

Typ

Unit

K/W

[1]

R_th(j-case)thermal resistance from junction to case

2.1

[1] When operated with a 6-carrier TD-SCDMA modulated signal with PAR = 10.8 dB at 0.01 % probability on

CCDF.

7. Characteristics

Table 6.

Characteristics

Valid for both main and peak device.

Symbol Parameter

Conditions

Min Typ Max Unit

V_(BR)DSSdrain-source breakdown voltage V_GS= 0 V; I_D= 0.62 mA

65

-

V

V_GS(th)

V_GSq

I_DSS

gate-source threshold voltage

gate-source quiescent voltage

drain leakage current

V_DS= 10 V; I_D= 31 mA

V_DS= 28 V; I_D= 170 mA

V_GS= 0 V; V_DS= 28 V

1.4 1.8 2.4

1.55 2.05 2.55

V

-

1.4

-

A

A

I_DSX

drain cut-off current

V_GS= V_GS(th)+ 3.75 V;

V_DS= 10 V

4.95 5.5

BLD6G21L-50_BLD6G21LS-50#3

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 3 — 1 September 2015

3 of 15

BLD6G21L-50; BLD6G21LS-50

TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor

Table 6.

Characteristics …continued

Valid for both main and peak device.

Symbol Parameter

Conditions

Min Typ Max Unit

I_GSS

g_fs

gate leakage current

V_GS= 11 V; V_DS= 0 V

V_DS= 10 V; I_D= 1.55 A

-

140

-

nA

S

forward transconductance

1.4 2.2

R_DS(on)drain-source on-state resistance V_GS= V_GS(th)+ 3.75 V;

I_D= 1.085 A

-

0.52 0.736



8. Application information

Table 7.

Application information

Mode of operation: 6-carrier TD-SCDMA; PAR 10.8 dB at 0.01 % probability on CCDF;

f = 2017.5 MHz; RF performance at V_DS= 28 V; I_Dq= 170 mA; V_GS(amp)peak= 0 V; T_case= 25 C;

unless otherwise specified; in a production circuit.

Symbol

P_L(AV)

G_p

Parameter

Conditions

Min

-

Typ

8

Max

Unit

W

average output power

power gain

-

P_L(AV)= 8 W

13

39

-

14.5

43

-

dB

%

_D

drain efficiency

-

PAR_O

RL_in

output peak-to-average ratio

input return loss

9.4

23

-

dB

dBc

8

-

ACPR

adjacent channel power ratio

-

24

20

Table 8.

Application information

Mode of operation: Pulsed CW;  = 10 %; t_p= 100 s; RF performance at V_DS= 28 V; I_Dq= 170 mA;

V_GS(amp)peak= 0 V; T_case= 25 C; unless otherwise specified; in a production circuit.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

P_L(3dB)

output power at 3 dB gain compression

46

53

-

W

8.1 Ruggedness in Doherty operation

The BLD6G21L-50 and BLD6G21LS-50 are capable of withstanding a load mismatch

corresponding to VSWR = 10 : 1 through all phases under the following conditions:

V

_DS= 28 V; I_Dq= 170 mA; P_L= 8 W (TD-SCDMA); f = 2017.5 MHz.

8.2 Impedance information

Table 9.

Typical impedance

Measured Load Pull data; typical values unless otherwise specified.

f

Z_S

Z_L

MHz

1995

2010

2017.5

2025

2040



3.5  12.3j

3.6  12.7j

3.7  12.7j

4.0  12.9j

6.7  6.1j

6.7  5.7j

6.4  5.2j

5.7  4.8j

BLD6G21L-50_BLD6G21LS-50#3

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 3 — 1 September 2015

4 of 15

BLD6G21L-50; BLD6G21LS-50

TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor

drain

Z

L

gate

Z

S

001aaf059

Fig 2. Definition of transistor impedance

8.3 Performance curves

Performance curves are measured in a BLD6G21L-50 application circuit.

8.3.1 CW pulsed

001aam428

001aam429

17

60

G

(dB)

η

D

(%)

p

(1)

(2)

(3)

(4)

(5)

(6)

15

40

(6)

(5)

(4)

(3)

(2)

(1)

13

11

20

0

30

35

40

45

50

30

35

40

45

50

P

(dBm)

P (dBm)

L

V_DS= 28 V; I_Dq= 170 mA (main); T_case= 25 C;

f = 2017.5 MHz;  = 10 %; t_p= 100 s on 1 ms period.

(1) V_GS(amp)peak= 0 V

(2) V_GS(amp)peak= 0.2 V

(3) V_GS(amp)peak= 0.4 V

(4) V_GS(amp)peak= 0.5 V

(5) V_GS(amp)peak= 0.6 V

(6) V_GS(amp)peak= 0.8 V

(1) V_GS(amp)peak= 0 V

(2) V_GS(amp)peak= 0.2 V

(3) V_GS(amp)peak= 0.4 V

(4) V_GS(amp)peak= 0.5 V

(5) V_GS(amp)peak= 0.6 V

(6) V_GS(amp)peak= 0.8 V

Fig 3. Power gain as a function of load power;

typical values

Fig 4. Drain efficiency as a function of load power;

typical values

BLD6G21L-50_BLD6G21LS-50#3

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 3 — 1 September 2015

5 of 15

BLD6G21L-50; BLD6G21LS-50

TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor

001aam430

001aam431

16

60

G

(dB)

η

D

(%)

p

(3)

(2)

(1)

14

40

(1)

(2)

(3)

12

10

20

0

30

36

42

48

30

35

40

45

50

P

(dBm)

P (dBm)

L

V_DS= 28 V; I_Dq= 170 mA (main); T_case= 25 C;

_GS(amp)peak= 0 V;  = 10 %; t_p= 100 s on 1 ms period.

V_DS= 28 V; I_Dq= 170 mA (main); T_case= 25 C;

_GS(amp)peak= 0 V;  = 10 %; t_p= 100 s on 1 ms period.

V

(1) f = 2010 MHz

(2) f = 2018 MHz

(3) f = 2025 MHz

(1) f = 2010 MHz

(2) f = 2018 MHz

(3) f = 2025 MHz

Fig 5. Power gain as a function of load power;

typical values

Fig 6. Drain efficiency as a function of load power;

typical values

001aam432

50

RL

in

(dB)

40

30

20

10

0

(3)

(2)

(1)

30

36

42

48

P

(dBm)

L

V_DS= 28 V; I_Dq= 170 mA; V_GS(amp)peak= 0 V; T_case= 25 C;  = 10 %; t_p= 100 s on 1 ms period.

(1) f = 2010 MHz

(2) f = 2018 MHz

(3) f = 2025 MHz

Fig 7. Input return loss as a function of load power; typical values

BLD6G21L-50_BLD6G21LS-50#3

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 3 — 1 September 2015

6 of 15

BLD6G21L-50; BLD6G21LS-50

TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor

8.3.2 TD-SCDMA

001aam433

001aam434

17

48

G

(dB)

η

D

(%)

p

(1)

(2)

(3)

(4)

(5)

(6)

15

32

(6)

(5)

(4)

(3)

(2)

(1)

13

11

16

0

22

30

38

46

22

30

38

46

P

(dBm)

P

(dBm)

L(AV)

V_DS= 28 V; I_Dq= 170 mA (main); T_case= 25 C;

f = 2017.5 MHz; 6-carrier TD-SCDMA; PAR = 10.8 dB at

0.01 % probability on CCDF.

V

_DS= 28 V; I_Dq= 170 mA (main); T_case= 25 C;

f = 2017.5 MHz; 6-carrier TD-SCDMA; PAR = 10.8 dB at

0.01 % probability on CCDF.

(1)

V

_GS(amp)peak= 0 V

(1) V_GS(amp)peak= 0 V

(2) V_GS(amp)peak= 0.2 V

(3) V_GS(amp)peak= 0.4 V

(4) V_GS(amp)peak= 0.5 V

(5) V_GS(amp)peak= 0.6 V

(6) V_GS(amp)peak= 0.8 V

(2) V_GS(amp)peak= 0.2 V

(3) V_GS(amp)peak= 0.4 V

(4) V_GS(amp)peak= 0.5 V

(5) V_GS(amp)peak= 0.6 V

(6) V_GS(amp)peak= 0.8 V

Fig 8. Power gain as a function of average load

power; typical values

Fig 9. Drain efficiency as a function of average load

power; typical values

BLD6G21L-50_BLD6G21LS-50#3

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 3 — 1 September 2015

7 of 15

BLD6G21L-50; BLD6G21LS-50

TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor

001aam435

16

43

η

D

(%)

η

D

G

(dB)

p

42

15.5

41

40

39

15

14.5

14

G

p

38

37

0.8

(V)

0

0.2

0.4

0.6

GS(amp)peak

V

V_DS= 28 V; I_Dq= 170 mA; P_L(AV)= 8 W; T_case= 25 C; f = 2017.5 MHz; 6-carrier TD-SCDMA;

PAR = 10.8 dB at 0.01 % probability on CCDF.

Fig 10. Power gain and drain efficiency as function of peak amplifier gate-source voltage;

typical values

001aam436

001aam437

16

48

G

(dB)

η

D

(%)

p

14

32

(1)

(2)

(3)

(1)

(2)

(3)

12

10

16

0

22

26

30

34

38

L(AV)

42

(dBm)

18

26

34

42

P

(dBm)

L(AV)

V_DS= 28 V; I_Dq= 170 mA (main); T_case= 25 C;

_GS(amp)peak= 0 V; 6-carrier TD-SCDMA; PAR = 10.8 dB

at 0.01 % probability on CCDF.

V_DS= 28 V; I_Dq= 170 mA (main); T_case= 25 C;

_GS(amp)peak= 0 V; 6-carrier TD-SCDMA; PAR = 10.8 dB

at 0.01 % probability on CCDF.

V

(1) f = 2010 MHz

(2) f = 2018 MHz

(3) f = 2025 MHz

(1) f = 2010 MHz

(2) f = 2018 MHz

(3) f = 2025 MHz

Fig 11. Power gain as a function of average load

power; typical values

Fig 12. Drain efficiency as a function of average load

power; typical values

BLD6G21L-50_BLD6G21LS-50#3

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 3 — 1 September 2015

8 of 15

BLD6G21L-50; BLD6G21LS-50

TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor

9. Test information

V

GS(amp)main

V

DD

C2

R1

C6

C7

C11

C12

L1

V

GS(amp)peak

C3

C13

INPUT

BLD6G21-50-V2

C19

C20

C9

C1

C21

C10

C17

C18

C14

L2

C15

C16

C4

R2

C5

OUTPUT

C8

BLD6G21-50-V2

001aak944

The striplines are on a double copper-clad gold plated Rogers 4350B Printed-Circuit Board (PCB)

with _r= 3.5 and thickness = 0.76 mm.

See Table 10 for list of components.

Fig 13. Component layout

Table 10. List of components

See Figure 13 for component layout.

Component

C1, C3, C5, C18

C2, C4, C12, C15

C6

Description

Value

Dimensions

[1]

multilayer ceramic chip capacitor 9.1 pF

multilayer ceramic chip capacitor 100 nF

electrolytic capacitor

470 F; 63 V

C7, C8

multilayer ceramic chip capacitor 10 F

multilayer ceramic chip capacitor 1.5 pF

[1]

C9, C10

C11, C13, C14, C16 multilayer ceramic chip capacitor 8.2 pF

C17

multilayer ceramic chip capacitor 1.2 pF

multilayer ceramic chip capacitor 0.7 pF

multilayer ceramic chip capacitor 1.2 pF

C19, C20

C21

L1, L2

copper wire

-

diameter = 0.8 mm;

length = 8 mm

R1

R2

SMD resistor

3.6 

33 

1206

[1] American Technical Ceramics type 100B or capacitor of same quality.

BLD6G21L-50_BLD6G21LS-50#3

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 3 — 1 September 2015

9 of 15

BLD6G21L-50; BLD6G21LS-50

TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor

10. Package outline

Flanged ceramic package; 2 mounting holes; 4 leads

SOT1130A

D

A

F

D

U

L

1

B

C

1

q

c

1

U

2

E

1

H

p

E

3

w

1

A

B

A

4

b

2

5

b

1

w

2

C

Q

0

5

10 mm

scale

Dimensions

(1)

(2)

Unit

A

b

1

c

D

1

E

1

F

H

L

p

Q

q

U

1

U

2

w

1

w

2

max 4.65 1.14 5.26 0.18 9.65 9.65 9.65 9.65 1.14 17.12 3.00 3.30 1.70

mm nom

20.45 9.91

15.24

0.6

0.25 0.51

0.01 0.02

min 3.76 0.89 5.00 0.10 9.40 9.40 9.40 9.40 0.89 16.10 2.69 2.92 1.45

20.19 9.65

0.805 0.39

max 0.183 0.045 0.207 0.007 0.38 0.38 0.38 0.38 0.045 0.674 0.118 0.130 0.067

inches nom

min 0.148 0.035 0.197 0.004 0.37 0.37 0.37 0.37 0.035 0.634 0.106 0.115 0.057

0.795 0.38

Note

1. millimeter dimensions are derived from the original inch dimensions.

2. dimension is measured 0.030 inch (0.76 mm) from the body.

sot1130a_po

References

Outline

version

European

projection

Issue date

IEC

JEDEC

JEITA

09-10-12

10-02-02

SOT1130A

Fig 14. Package outline SOT1130A

BLD6G21L-50_BLD6G21LS-50#3

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 3 — 1 September 2015

10 of 15

BLD6G21L-50; BLD6G21LS-50

TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor

Earless flanged ceramic package; 4 leads

SOT1130B

D

A

F

3

D

1

L

D

U

1

c

1

U

2

E

1

H

E

Z

1

α

4

b

2

5

b

1

w

2

D

Q

0

5

10 mm

Q

scale

Dimensions

(1)

Unit

A

b

1

c

D

1

E

F

H

L

U

1

U

2

w

2

Z

1

α

1

°

64

max 4.65 1.14 5.26 0.18 9.65 9.65 9.65 9.65 1.14 17.12 3.00 1.70 9.91 9.91

mm nom

min 3.76 0.89 5.00 0.10 9.40 9.40 9.40 9.40 0.89 16.10 2.69 1.45 9.65 9.65

max 0.183 0.045 0.207 0.007 0.38 0.38 0.38 0.38 0.045 0.674 0.118 0.069 0.39 0.39

inches nom

min 0.148 0.035 0.197 0.004 0.37 0.37 0.37 0.37 0.035 0.634 0.106 0.059 0.38 0.38

3.05 5.66

0.51

0.02

°

62

64

2.79 5.41

0.120 0.223

0.110 0.213

°

62

Note

1. millimeter dimensions are derived from the original inch dimensions.

2. dimension is measured 0.030 inch (0.76 mm) from the body.

sot1130b_po

References

Outline

version

European

projection

Issue date

IEC

JEDEC

JEITA

09-10-12

09-12-14

SOT1130B

Fig 15. Package outline SOT1130B

BLD6G21L-50_BLD6G21LS-50#3

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 3 — 1 September 2015

11 of 15

BLD6G21L-50; BLD6G21LS-50

TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor

11. Abbreviations

Table 11. Abbreviations

Acronym

Description

CCDF

CW

Complementary Cumulative Distribution Function

Continuous Wave

LDMOS

PAR

Laterally Diffused Metal-Oxide Semiconductor

Peak-to-Average power Ratio

Radio Frequency

RF

SMD

Surface Mounted Device

TD-SCDMA

VSWR

Time Division-Synchronous Code Division Multiple Access

Voltage Standing-Wave Ratio

12. Revision history

Table 12. Revision history

Document ID

Release date Data sheet status Change notice Supersedes

BLD6G21L-50_BLD6G21LS-50#3 20150901

Product data sheet

-

BLD6G21L-50_BLD6G21LS-

50 v.2

Modifications:

• The format of this document has been redesigned to comply with the new identity

guidelines of Ampleon.

• Legal texts have been adapted to the new company name where appropriate.

BLD6G21L-50_BLD6G21LS-50v.2 20100817

Product data sheet

-

BLD6G21L-50_BLD6G21LS-

50 v.1

BLD6G21L-50_BLD6G21LS-50v.1 20091028

Objective data

sheet

-

BLD6G21L-50_BLD6G21LS-50#3

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 3 — 1 September 2015

12 of 15

BLD6G21L-50; BLD6G21LS-50

TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor

13. Legal information

13.1 Data sheet status

Document status^[1][2]

Product status^[3]

Development

Definition

Objective [short] data sheet

This document contains data from the objective specification for product development.

This document contains data from the preliminary specification.

This document contains the product specification.

Preliminary [short] data sheet Qualification

Product [short] data sheet Production

[1]

[2]

[3]

Please consult the most recently issued document before initiating or completing a design.

The term ‘short data sheet’ is explained in section “Definitions”.

The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.ampleon.com.

Ampleon product can reasonably be expected to result in personal injury,

13.2 Definitions

death or severe property or environmental damage. Ampleon and its

suppliers accept no liability for inclusion and/or use of Ampleon products in

such equipment or applications and therefore such inclusion and/or use is at

the customer’s own risk.

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. Ampleon does not give any representations or

warranties as to the accuracy or completeness of information included herein

and shall have no liability for the consequences of use of such information.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. Ampleon makes no representation

or warranty that such applications will be suitable for the specified use without

further testing or modification.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local Ampleon sales office. In

case of any inconsistency or conflict with the short data sheet, the full data

sheet shall prevail.

Customers are responsible for the design and operation of their applications

and products using Ampleon products, and Ampleon accepts no liability for

any assistance with applications or customer product design. It is customer’s

sole responsibility to determine whether the Ampleon product is suitable and

fit for the customer’s applications and products planned, as well as for the

planned application and use of customer’s third party customer(s). Customers

should provide appropriate design and operating safeguards to minimize the

risks associated with their applications and products.

Product specification — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

Ampleon and its customer, unless Ampleon and customer have explicitly

agreed otherwise in writing. In no event however, shall an agreement be valid

in which the Ampleon product is deemed to offer functions and qualities

beyond those described in the Product data sheet.

Ampleon does not accept any liability related to any default, damage, costs or

problem which is based on any weakness or default in the customer’s

applications or products, or the application or use by customer’s third party

customer(s). Customer is responsible for doing all necessary testing for the

customer’s applications and products using Ampleon products in order to

avoid a default of the applications and the products or of the application or

use by customer’s third party customer(s). Ampleon does not accept any

liability in this respect.

13.3 Disclaimers

Limited warranty and liability — Information in this document is believed to

be accurate and reliable. However, Ampleon does not give any

representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information. Ampleon takes no responsibility for

the content in this document if provided by an information source outside of

Ampleon.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

In no event shall Ampleon be liable for any indirect, incidental, punitive,

special or consequential damages (including - without limitation - lost profits,

lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Terms and conditions of commercial sale — Ampleon products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.ampleon.com/terms, unless otherwise agreed in a valid written

individual agreement. In case an individual agreement is concluded only the

terms and conditions of the respective agreement shall apply. Ampleon

hereby expressly objects to applying the customer’s general terms and

conditions with regard to the purchase of Ampleon products by customer.

Notwithstanding any damages that customer might incur for any reason

whatsoever, Ampleon’ aggregate and cumulative liability towards customer

for the products described herein shall be limited in accordance with the

Terms and conditions of commercial sale of Ampleon.

No offer to sell or license — Nothing in this document may be interpreted or

construed as an offer to sell products that is open for acceptance or the grant,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Right to make changes — Ampleon reserves the right to make changes to

information published in this document, including without limitation

specifications and product descriptions, at any time and without notice. This

document supersedes and replaces all information supplied prior to the

publication hereof.

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from competent authorities.

Suitability for use — Ampleon products are not designed, authorized or

warranted to be suitable for use in life support, life-critical or safety-critical

systems or equipment, nor in applications where failure or malfunction of an

BLD6G21L-50_BLD6G21LS-50#3

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 3 — 1 September 2015

13 of 15

BLD6G21L-50; BLD6G21LS-50

TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor

Non-automotive qualified products — Unless this data sheet expressly

13.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

states that this specific Ampleon product is automotive qualified, the product

is not suitable for automotive use. It is neither qualified nor tested in

accordance with automotive testing or application requirements. Ampleon

accepts no liability for inclusion and/or use of non-automotive qualified

products in automotive equipment or applications.

Any reference or use of any ‘NXP’ trademark in this document or in or on the

surface of Ampleon products does not result in any claim, liability or

entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of

the NXP group of companies and any reference to or use of the ‘NXP’

trademarks will be replaced by reference to or use of Ampleon’s own Any

reference or use of any ‘NXP’ trademark in this document or in or on the

surface of Ampleon products does not result in any claim, liability or

entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of

the NXP group of companies and any reference to or use of the ‘NXP’

trademarks will be replaced by reference to or use of Ampleon’s own

trademarks.

In the event that customer uses the product for design-in and use in

automotive applications to automotive specifications and standards, customer

(a) shall use the product without Ampleon’ warranty of the product for such

automotive applications, use and specifications, and (b) whenever customer

uses the product for automotive applications beyond Ampleon’ specifications

such use shall be solely at customer’s own risk, and (c) customer fully

indemnifies Ampleon for any liability, damages or failed product claims

resulting from customer design and use of the product for automotive

applications beyond Ampleon’ standard warranty and Ampleon’ product

specifications.

14. Contact information

For more information, please visit:

http://www.ampleon.com

For sales office addresses, please visit:

http://www.ampleon.com/sales

BLD6G21L-50_BLD6G21LS-50#3

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 3 — 1 September 2015

14 of 15

BLD6G21L-50; BLD6G21LS-50

TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor

15. Contents

1

Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

General description . . . . . . . . . . . . . . . . . . . . . 1

Features and benefits. . . . . . . . . . . . . . . . . . . . 1

Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

1.1

1.2

1.3

2

3

4

5

6

7

Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

Ordering information. . . . . . . . . . . . . . . . . . . . . 2

Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

Thermal characteristics . . . . . . . . . . . . . . . . . . 3

Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

8

8.1

8.2

8.3

8.3.1

8.3.2

Application information. . . . . . . . . . . . . . . . . . . 4

Ruggedness in Doherty operation . . . . . . . . . . 4

Impedance information . . . . . . . . . . . . . . . . . . . 4

Performance curves . . . . . . . . . . . . . . . . . . . . . 5

CW pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

TD-SCDMA. . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

9

Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9

Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10

Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 12

Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12

10

11

12

13

Legal information. . . . . . . . . . . . . . . . . . . . . . . 13

Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13

Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14

13.1

13.2

13.3

13.4

14

15

Contact information. . . . . . . . . . . . . . . . . . . . . 14

Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.ampleon.com

For sales office addresses, please visit: http://www.ampleon.com/sales

Date of release: 1 September 2015

Document identifier: BLD6G21L-50_BLD6G21LS-50#3


型号：	BLD6G21LS-50,112
厂家：	ETC
描述：	RF FET LDMOS 65V 14.5DB SOT1130B
文件：	总15页 (文件大小：1030K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BLD6G21LS-50,112 [ETC]

相关型号：

BLD6G22L(S)-50

BLD6G22L-50

BLD6G22L-50,112

BLD6G22LS-50

BLD6G22LS-50,112

BLD8800

BLD8800-C

BLD8800-C-R

BLD8800-C-S

BLD8800-S

BLE113-A-M256K

BLE32PN300SN1