BLF10H6600PSU [ETC]
RF FET LDMOS 110V 20.8DB SOT539B;
| 型号： | BLF10H6600PSU |
| 厂家： | 
ETC |
| 描述： | RF FET LDMOS 110V 20.8DB SOT539B |
| 文件： | 总18页 (文件大小：1512K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BLF10H6600P; BLF10H6600PS
Power LDMOS transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
A 600 W LDMOS RF power transistor for transmitter applications and industrial
applications. The excellent ruggedness of this device makes it ideal for digital and analog
transmitter applications.
Table 1.
Application information
Test signal
f
PL(AV)
(W)
PL(M)
(W)
Gp
D
IMD3
(MHz)
(dB)
(%) (dBc)
RF performance in a common source 860 MHz narrowband test circuit
2-tone, class-AB
pulsed, class-AB
f1 = 860; f2 = 860.1
860
250
-
-
20.8
19.8
46
58
32
600
-
1.2 Features and benefits
Excellent ruggedness (VSWR 40 : 1 through all phases)
Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W
High power gain
High efficiency
Designed for broadband operation (400 MHz to 1000 MHz)
Internal input matching for high gain and optimum broadband operation
Excellent reliability
Easy power control
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Communication transmitter applications
Industrial applications
BLF10H6600P; BLF10H6600PS
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
Pinning
Description
Simplified outline
Graphic symbol
BLF10H6600P (SOT539A)
1
2
3
4
5
drain1
drain2
gate1
gate2
source
1
3
2
4
1
5
3
5
4
[1]
2
sym117
BLF10H6600PS (SOT539B)
1
2
3
4
5
drain1
drain2
gate1
gate2
source
1
3
2
4
1
5
3
5
4
[1]
2
sym117
[1] Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name Description
Version
BLF10H6600P
-
flanged balanced ceramic package; 2 mounting holes;
4 leads
SOT539A
BLF10H6600PS
-
earless flanged balanced ceramic package; 4 leads
SOT539B
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
-
Max
110
Unit
V
drain-source voltage
gate-source voltage
storage temperature
junction temperature
VGS
Tstg
0.5
65
-
+11
V
+150
225
C
C
[1]
Tj
[1] Continuous use at maximum temperature will affect the reliability. For details refer to the on-line MTF
calculator.
BLF10H6600P_BLF10H6600PS#3
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© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
2 of 18
BLF10H6600P; BLF10H6600PS
Power LDMOS transistor
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol Parameter
Conditions
Typ Unit
[1]
Rth(j-c)
thermal resistance from junction to case Tcase = 80 C; PL(AV) = 250 W
0.15 K/W
[1] Rth(j-c) is measured under RF conditions.
6. Characteristics
Table 6.
DC characteristics
Tj = 25 C; per section unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
[1]
[1]
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 2.4 mA
110
-
-
V
V
VGS(th)
IDSS
gate-source threshold voltage
drain leakage current
VDS = 10 V; ID = 240 mA
VGS = 0 V; VDS = 50 V
1.4 1.9 2.4
-
-
-
2.8 A
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
36
-
A
IGSS
gate leakage current
VGS = 10 V; VDS = 0 V
-
-
-
280 nA
m
[1]
RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V;
ID = 8.5 A
143
-
[1] ID is the drain current.
Table 7.
AC characteristics
Tj = 25 C; per section unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
[1]
Ciss
Coss
Crss
input capacitance
VGS = 0 V; VDS = 50 V; f = 1 MHz
VGS = 0 V; VDS = 50 V; f = 1 MHz
VGS = 0 V; VDS = 50 V; f = 1 MHz
-
-
-
220 -
pF
pF
pF
output capacitance
74
-
-
reverse transfer
capacitance
1.2
[1] Capacitance values without internal matching.
Table 8.
RF characteristics
RF characteristics in Ampleon production narrowband test circuit; Tcase = 25 C unless otherwise
specified.
Symbol Parameter
2-Tone, class-AB
Conditions
Min
Typ Max Unit
VDS
IDq
drain-source voltage
-
50
1.3
-
-
-
-
V
[1]
quiescent drain current
average output power
power gain
-
A
PL(AV)
Gp
f1 = 860 MHz; f2 = 860.1 MHz
f1 = 860 MHz; f2 = 860.1 MHz
f1 = 860 MHz; f2 = 860.1 MHz
250
W
dB
%
19.8 20.8 -
D
drain efficiency
42
-
46
-
IMD3
third-orderintermodulation f1 = 860 MHz; f2 = 860.1 MHz
distortion
32 28 dBc
BLF10H6600P_BLF10H6600PS#3
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© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
3 of 18
BLF10H6600P; BLF10H6600PS
Power LDMOS transistor
Table 8.
RF characteristics …continued
RF characteristics in Ampleon production narrowband test circuit; Tcase = 25 C unless otherwise
specified.
Symbol Parameter
Pulsed, class-AB
Conditions
Min
Typ Max Unit
VDS
IDq
PL(M)
Gp
D
tp
drain-source voltage
-
-
-
50
-
-
-
V
[1]
quiescent drain current
peak output power
power gain
1.3
600
A
f = 860 MHz
f = 860 MHz
f = 860 MHz
W
dB
%
s
%
17.2 19.8 -
drain efficiency
pulse duration
duty cycle
54
-
58
-
-
-
100
20
-
[1] IDq for total device
001aam579
400
C
oss
(pF)
300
200
100
0
0
20
40
60
V
(V)
DS
VGS = 0 V; f = 1 MHz.
Fig 1. Output capacitance as a function of drain-source voltage; typical values per
section
7. Test information
7.1 Ruggedness in class-AB operation
The BLF10H6600P and BLF10H6600PS are capable of withstanding a load mismatch
corresponding to VSWR 40 : 1 through all phases under the following conditions:
V
DS = 50 V; IDq = 1.3 A; PL = 600 W (pulsed); f = 860 MHz.
BLF10H6600P_BLF10H6600PS#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
4 of 18
BLF10H6600P; BLF10H6600PS
Power LDMOS transistor
7.2 Impedance information
Table 9.
Simulated Zi and ZL device impedance; impedance info at VDS = 50 V and
L(AV) = 600 W (pulsed CW). See Figure 2 for definition of transistor impedance.
Typical push-pull impedance
P
f
Zi
ZL
MHz
300
325
350
375
400
425
450
475
500
525
550
575
600
625
650
675
700
725
750
775
800
825
850
875
900
925
950
975
1000
0.607 + j0
5.495 + j1.936
5.324 + j2.008
5.151 + j2.065
4.977 + j2.107
4.805 + j2.136
4.634 + j2.153
4.466 + j2.157
4.301 + j2.151
4.14 + j2.134
3.984 + j2.109
3.833 + j2.075
3.687 + j2.033
3.546 + j1.985
3.411 + j1.931
3.281 + j1.871
3.156 + j1.807
3.036 + j1.738
2.922 + j1.666
2.813 + j1.591
2.708 + j1.512
2.609 + j1.432
2.514 + j1.349
2.423 + j1.264
2.336 + j1.178
2.254 + j1.091
2.175 + j1.003
2.1 + j0.913
0.622 j1.441
0.639 j1.121
0.658 j0.826
0.679 j0.551
0.703 j0.291
0.73 j0.044
0.76 + j0.194
0.793 + j0.424
0.83 + j0.648
0.872 + j0.869
0.919 + j1.088
0.972 + j1.305
1.032 + j1.523
1.101 + j1.741
1.179 + j1.963
1.268 + j2.187
1.371 + j2.416
1.49 + j2.651
1.629 + j2.891
1.792 + j3.138
1.984 + j3.39
2.212 + j3.649
2.484 + j3.91
2.812 + j4.17
3.209 + j4.421
3.689 + j4.648
4.27 + j4.829
4.967 + j4.927
2.029 + j0.823
1.96 + j0.733
BLF10H6600P_BLF10H6600PS#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
5 of 18
BLF10H6600P; BLF10H6600PS
Power LDMOS transistor
drain 1
gate 1
Z
Z
L
i
gate 2
drain 2
001aan207
Fig 2. Definition of transistor impedance
7.3 Test circuit information
Table 10. List of components
For test circuit, see Figure 3, Figure 4 and Figure 5.
Component
B1, B2
C1
Description
Value
Remarks
semi rigid coax
25 ; 49.5 mm
12 pF
UT-090C-25 (EZ 90-25)
[1]
[1]
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
C2, C3, C4, C5,
C6
8.2 pF
[2]
[2]
[2]
[3]
[2]
C7
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
6.8 pF
C8
2.7 pF
C9
2.2 pF
C10, C13, C14
C11, C12
C15, C16
100 pF
10 pF
4.7 F, 50 V
Kemet C1210X475K5RAC-TU or
capacitor of same quality.
[2]
C17, C18, C23,
C24
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
100 pF
C19, C20
10 F, 50 V
TDK C570X7R1H106KT000N or
capacitor of same quality.
C21, C22
C30
electrolytic capacitor
470 F; 63 V
10 pF
[4]
[4]
[4]
[4]
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
C31
9.1 pF
C32
3.9 pF
C33, C34, C35
C36, C37
100 pF
4.7 F, 50 V
TDK C4532X7R1E475MT020U or
capacitor of same quality.
[5]
[5]
[5]
[5]
[5]
[5]
[5]
[5]
L1
microstrip
microstrip
microstrip
microstrip
microstrip
microstrip
microstrip
microstrip
wire resistor
-
(W L) 15 mm 13 mm
(W L) 5 mm 26 mm
(W L) 2 mm 49.5 mm
(W L) 1.7 mm 3.5 mm
(W L) 2 mm 9.5 mm
(W L) 5 mm 13 mm
(W L) 2 mm 11 mm
(W L) 2 mm 3 mm
L2
-
L3, L32
L4
-
-
L5
-
L30
L31
L33
R1, R2
-
-
-
10
BLF10H6600P_BLF10H6600PS#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
6 of 18
BLF10H6600P; BLF10H6600PS
Power LDMOS transistor
Table 10. List of components …continued
For test circuit, see Figure 3, Figure 4 and Figure 5.
Component
R3, R4
Description
SMD resistor
wire resistor
potentiometer
Value
5.6
100
10 k
Remarks
0805
R5, R6
R7, R8
[1] American technical ceramics type 800R or capacitor of same quality.
[2] American technical ceramics type 800B or capacitor of same quality.
[3] American technical ceramics type 180R or capacitor of same quality.
[4] American technical ceramics type 100A or capacitor of same quality.
[5] Printed-Circuit Board (PCB): Taconic RF35; r = 3.5 F/m; height = 0.762 mm; Cu (top/bottom metallization);
thickness copper plating = 35 m.
BLF10H6600P_BLF10H6600PS#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
7 of 18
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+V
G1(test)
R7
C19
R1
C17
L5
+V
R5
D1(test)
C36
C21
C23
C11
R3
C13
C14
C15
C34
C35
L30
C30
L32
B2
L3
B1
L1
C3
L31
C32
L2
C1
C5
C4
C8
50 Ω
C33
C10
50 Ω
L33
L4
C31
C2
C6 C7
C9
C16
R4
R6
C12
C37
C22
C24
+V
D2(test)
C18
R2
C20
R8
+V
G2(test)
001aan763
See Table 10 for a list of components.
Fig 3. Class-AB common source broadband amplifier; VD1(test), VD2(test), VG1(test) and VG2(test) are drain and gate test voltages
BLF10H6600P; BLF10H6600PS
Power LDMOS transistor
L3
L32
L5
L30
L1
L2
L4
L2
L31
L31
50 mm
L33
L1
L30
L5
L32
L3
105 mm
001aam588
See Table 10 for a list of components.
Fig 4. Printed-Circuit Board (PCB) for class-AB common source amplifier
49.6 mm
44 mm
+V
G1(test)
+V
D1(test)
+
R1
C17
R5
C23
R7
C19
C36
-
C21
C11
R3
C15
C10
C13
C34
C35
C7 C9
C30
C31
C1
C3
C5
C32
C33
50 Ω
50 Ω
C2
C4
C6
C14
C8
C12
4 mm
C16
R4
C22
-
C37
C20
R2
R6
R8
C24
C18
+
+V
G2(test)
+V
D2(test)
6.3 mm
25.3 mm
26.3 mm
36.8 mm
001aan764
See Table 10 for a list of components.
Fig 5. Component layout for class-AB common source amplifier
BLF10H6600P_BLF10H6600PS#3
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© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
9 of 18
BLF10H6600P; BLF10H6600PS
Power LDMOS transistor
7.4 Graphical data
7.4.1 Pulsed
aaa-007877
aaa-007878
63
23
G
p
P
L
(dB)
(dBm)
61
21
19
17
15
(5))
(4))
Ideal P
L
(2)
(3))
59
57
55
(2))
(1))
(1)
P
L
34
35
36
37
38
39
40
41
0
100
200
300
400
500
600
(W)
700
P
P (dBm)
i
L
VDS = 50 V; IDq = 1300 mA; f = 860 MHz; tp = 100 s;
= 20 %.
V
DS = 50 V; f = 860 MHz; tp = 100 s; = 20 %.
(1) IDq = 100 mA
(2) IDq = 200 mA
(3) IDq = 600 mA
(4) IDq = 1000 mA
(5) IDq = 1300 mA
(1) PL(1dB) = 57.6 dBm (575 W)
(2) PL(3dB) = 58.1 dBm (649 W)
Fig 6. Output power as a function of input power;
typical values
Fig 7. Power gain as a function of output power;
typical values
BLF10H6600P_BLF10H6600PS#3
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© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
10 of 18
BLF10H6600P; BLF10H6600PS
Power LDMOS transistor
aaa-007879
aaa-007880
80
60
40
20
0
22
21
20
19
18
80
60
40
20
0
η
G
ηη
D
(%)
D
p
(%)
(dB)
G
p
(1)
(2)
(3)
(4)
(5)
η
D
0
100
200
300
400
500
600
(W)
700
0
100
200
300
400
500
600
(W)
700
P
P
L
L
VDS = 50 V; f = 860 MHz; tp = 100 s; = 20 %.
VDS = 50 V; IDq = 1300 mA; f = 860 MHz; tp = 100 s;
= 20 %.
(1) IDq = 100 mA
(2) IDq = 200 mA
(3) IDq = 600 mA
(4) IDq = 1000 mA
(5) IDq = 1300 mA
Fig 8. Drain efficiency as a function of output power;
typical values
Fig 9. Power gain and drain efficiency as function of
output power; typical values
aaa-007881
aaa-007882
24
80
G
η
D
(%)
p
(dB)
(1)
(2))
22
20
18
16
60
40
20
0
(3))
(4)
(5))
(1)
(2)
(3)
(4)
(5)
0
100
200
300
400
500
600
(W)
700
0
100
200
300
400
500
600
(W)
700
P
P
L
L
IDq = 1300 mA; f = 860 MHz; tp = 100 s; = 20 %.
IDq = 1300 mA; f = 860 MHz; tp = 100 s; = 20 %.
(1) VDS = 50 V
(2) VDS = 45 V
(3) VDS = 40 V
(4) VDS = 35 V
(5) VDS = 30 V
(1) VDS = 50 V
(2) VDS = 45 V
(3) VDS = 40 V
(4) VDS = 35 V
(5) VDS = 30 V
Fig 10. Power gain as a function of output power;
typical values
Fig 11. Drain efficiency as a function of output power;
typical values
BLF10H6600P_BLF10H6600PS#3
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© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
11 of 18
BLF10H6600P; BLF10H6600PS
Power LDMOS transistor
7.4.2 2-Tone CW
aaa-007883
aaa-007884
0
22
21
20
19
18
80
60
40
20
0
IMD3
(dBc)
G
ηη
D
(%)
p
(dB)
-10
-20
-30
-40
-50
-60
G
p
(1))
(2))
(3))
(4))
η
D
(5))
0
50 100 150 200 250 300 350 400
(W)
0
50 100 150 200 250 300 350 400
(W)
P
L(AV)
P
L(AV)
VDS = 50 V; f1 = 860.0 MHz; f2 = 860.1 MHz.
VDS = 50 V; IDq = 1300 mA; f1 = 860.0 MHz;
f2 = 860.1 MHz.
(1) IDq = 600 mA
(2) IDq = 1000 mA
(3) IDq = 1300 mA
(4) IDq = 1600 mA
(5) IDq = 2000 mA
Fig 12. Third-order intermodulation distortion as a
function of average output power;
typical values
Fig 13. Power gain and drain efficiency as function of
average output power; typical values
BLF10H6600P_BLF10H6600PS#3
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© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
12 of 18
BLF10H6600P; BLF10H6600PS
Power LDMOS transistor
8. Package outline
Flanged balanced ceramic package; 2 mounting holes; 4 leads
SOT539A
D
A
F
D
1
U
1
B
q
C
w
H
1
M
M
C
2
c
1
2
4
E
p
E
H
U
1
2
5
w
M
M
M
B
A
1
L
3
A
w
b
M
3
Q
e
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
D
D
e
E
E
F
H
H
L
p
Q
q
U
U
w
w
w
UNIT
1
1
1
1
2
1
2
3
11.81
11.56
3.30 2.26
3.05 2.01
4.7
4.2
31.55 31.52
30.94 30.96
9.50 9.53 1.75 17.12 25.53 3.48
9.30 9.27 1.50 16.10 25.27 2.97
41.28 10.29
41.02 10.03
0.18
0.10
35.56
1.400
0.25 0.51 0.25
0.010 0.020 0.010
mm
13.72
0.465
0.455
0.130 0.089
0.120 0.079
0.185
0.165
1.242 1.241
1.218 1.219
0.374 0.375 0.069 0.674 1.005 0.137
0.366 0.365 0.059 0.634 0.995 0.117
1.625 0.405
1.615 0.395
0.007
0.004
inches
Note
0.540
1. millimeter dimensions are derived from the original inch dimensions.
2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
10-02-02
12-05-02
SOT539A
Fig 14. Package outline SOT539A
BLF10H6600P_BLF10H6600PS#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
13 of 18
BLF10H6600P; BLF10H6600PS
Power LDMOS transistor
Earless flanged balanced ceramic package; 4 leads
SOT539B
D
A
F
5
D
D
1
U
H
1
1
c
w
D
2
1
2
E
U
E
H
1
2
L
3
4
b
w
Q
3
e
0
5
10 mm
scale
Dimensions
(1)
Unit
A
b
c
D
D
E
E
e
F
H
H
1
L
Q
U
U
w
w
3
1
1
1
2
2
max 4.7 11.81 0.18 31.55 31.52 9.5
mm nom
min 4.2 11.56 0.10 30.94 30.96 9.3
max 0.185 0.465 0.007 1.242 1.241 0.374 0.375
inches nom
min 0.165 0.455 0.004 1.218 1.219 0.366 0.365
9.53
1.75 17.12 25.53 3.48 2.26 32.39 10.29
13.72
0.54
0.25 0.25
0.01 0.01
9.27
1.50 16.10 25.27 2.97 2.01 32.13 10.03
0.069 0.674 1.005 0.137 0.089 1.275 0.405
0.059 0.634 0.995 0.117 0.079 1.265 0.395
Note
1. millimeter dimensions are derived from the original inch dimensions.
sot539b_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
JEITA
12-05-02
13-05-24
SOT539B
Fig 15. Package outline SOT539B
BLF10H6600P_BLF10H6600PS#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
14 of 18
BLF10H6600P; BLF10H6600PS
Power LDMOS transistor
9. Handling information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
10. Abbreviations
Table 11. Abbreviations
Acronym
CCDF
CW
Description
Complementary Cumulative Distribution Function
Continuous Wave
LDMOS
SMD
Laterally Diffused Metal-Oxide Semiconductor
Surface Mounted Device
VSWR
Voltage Standing-Wave Ratio
11. Revision history
Table 12. Revision history
Document ID
Release date Data sheet status
20150901 Product data sheet
Change notice Supersedes
BLF10H6600P_BLF1
0H6600PS v.2
BLF10H6600P_BLF10H6600PS#3
-
Modifications:
• The format of this document has been redesigned to comply with the new
identity guidelines of Ampleon.
• Legal texts have been adapted to the new company name where appropriate.
BLF10H6600P_BLF10H6600PS v.2
BLF0510H6600P v.1
20130620
Product data sheet
-
BLF0510H6600P v.1
20121009
Objective data sheet
-
-
BLF10H6600P_BLF10H6600PS#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
15 of 18
BLF10H6600P; BLF10H6600PS
Power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.ampleon.com.
Ampleon product can reasonably be expected to result in personal injury,
12.2 Definitions
death or severe property or environmental damage. Ampleon and its
suppliers accept no liability for inclusion and/or use of Ampleon products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Ampleon does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Ampleon makes no representation
or warranty that such applications will be suitable for the specified use without
further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Ampleon sales office. In
case of any inconsistency or conflict with the short data sheet, the full data
sheet shall prevail.
Customers are responsible for the design and operation of their applications
and products using Ampleon products, and Ampleon accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Ampleon product is suitable and
fit for the customer’s applications and products planned, as well as for the
planned application and use of customer’s third party customer(s). Customers
should provide appropriate design and operating safeguards to minimize the
risks associated with their applications and products.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Ampleon and its customer, unless Ampleon and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be valid
in which the Ampleon product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
Ampleon does not accept any liability related to any default, damage, costs or
problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Ampleon products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Ampleon does not accept any
liability in this respect.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, Ampleon does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. Ampleon takes no responsibility for
the content in this document if provided by an information source outside of
Ampleon.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
In no event shall Ampleon be liable for any indirect, incidental, punitive,
special or consequential damages (including - without limitation - lost profits,
lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale — Ampleon products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.ampleon.com/terms, unless otherwise agreed in a valid written
individual agreement. In case an individual agreement is concluded only the
terms and conditions of the respective agreement shall apply. Ampleon
hereby expressly objects to applying the customer’s general terms and
conditions with regard to the purchase of Ampleon products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Ampleon’ aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Ampleon.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Right to make changes — Ampleon reserves the right to make changes to
information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Suitability for use — Ampleon products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction of an
BLF10H6600P_BLF10H6600PS#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
16 of 18
BLF10H6600P; BLF10H6600PS
Power LDMOS transistor
Non-automotive qualified products — Unless this data sheet expressly
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
states that this specific Ampleon product is automotive qualified, the product
is not suitable for automotive use. It is neither qualified nor tested in
accordance with automotive testing or application requirements. Ampleon
accepts no liability for inclusion and/or use of non-automotive qualified
products in automotive equipment or applications.
Any reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own Any
reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own
trademarks.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without Ampleon’ warranty of the product for such
automotive applications, use and specifications, and (b) whenever customer
uses the product for automotive applications beyond Ampleon’ specifications
such use shall be solely at customer’s own risk, and (c) customer fully
indemnifies Ampleon for any liability, damages or failed product claims
resulting from customer design and use of the product for automotive
applications beyond Ampleon’ standard warranty and Ampleon’ product
specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
13. Contact information
For more information, please visit:
http://www.ampleon.com
For sales office addresses, please visit:
http://www.ampleon.com/sales
BLF10H6600P_BLF10H6600PS#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
17 of 18
BLF10H6600P; BLF10H6600PS
Power LDMOS transistor
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits. . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
2
3
4
5
6
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 4
Ruggedness in class-AB operation . . . . . . . . . 4
Impedance information . . . . . . . . . . . . . . . . . . . 5
Test circuit information . . . . . . . . . . . . . . . . . . . 6
Graphical data . . . . . . . . . . . . . . . . . . . . . . . . 10
Pulsed. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
7.1
7.2
7.3
7.4
7.4.1
7.4.2
8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 13
Handling information. . . . . . . . . . . . . . . . . . . . 15
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 15
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 15
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 16
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 16
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 17
12.1
12.2
12.3
12.4
13
14
Contact information. . . . . . . . . . . . . . . . . . . . . 17
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© Ampleon The Netherlands B.V. 2015.
All rights reserved.
For more information, please visit: http://www.ampleon.com
For sales office addresses, please visit: http://www.ampleon.com/sales
Date of release: 1 September 2015
Document identifier: BLF10H6600P_BLF10H6600PS#3
相关型号：
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