BLF178XR,112 [ETC]
RF FET LDMOS 110V 28DB SOT539A;型号: | BLF178XR,112 |
厂家: | ETC |
描述: | RF FET LDMOS 110V 28DB SOT539A |
文件: | 总14页 (文件大小:1178K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BLF178XR; BLF178XRS
Power LDMOS transistor
Rev. 5 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial
applications in the HF to 128 MHz band.
Table 1.
Application information
Test signal
f
VDS
(V)
50
PL
Gp
D
(%)
80
(MHz)
108
108
(W)
(dB)
23
CW
1200
1400
pulsed RF
50
28
72
1.2 Features and benefits
Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an
Dq of 40 mA, a tp of 100 s with of 20 %:
I
Output power = 1400 W
Power gain = 28 dB
Efficiency = 72 %
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (HF to 128 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications
Broadcast transmitter applications
BLF178XR; BLF178XRS
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
Pinning
Description
Simplified outline
Graphic symbol
BLF178XR (SOT539A)
1
2
3
4
5
drain1
drain2
gate1
gate2
source
1
3
2
4
1
5
3
5
4
[1]
2
sym117
BLF178XRS (SOT539B)
1
2
3
4
5
drain1
drain2
gate1
gate2
source
1
3
2
4
1
5
3
5
4
[1]
2
sym117
[1] Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name Description
Version
BLF178XR
-
flanged balanced LDMOST ceramic package;
2 mounting holes; 4 leads
SOT539A
BLF178XRS
-
earless flanged balanced LDMOST ceramic package;
4 leads
SOT539B
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
-
Max
Unit
V
drain-source voltage
gate-source voltage
storage temperature
junction temperature
110
+11
VGS
Tstg
6
65
-
V
+150 C
200 C
Tj
BLF178XR_BLF178XRS#5
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© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 5 — 1 September 2015
2 of 14
BLF178XR; BLF178XRS
Power LDMOS transistor
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol Parameter
Conditions
Tj = 150 C
Typ
Unit
[1][2]
[3]
Rth(j-c)
Zth(j-c)
thermal resistance from junction to case
0.11
K/W
transient thermal impedance from junction Tj = 150 C; tp = 100 s;
0.033 K/W
to case
= 20 %
[1] Tj is the junction temperature.
[2] Rth(j-c) is measured under RF conditions.
[3] See Figure 1.
aaa-002329
0.165
Z
th(j-c)
(K/W)
0.11
(7)
(6)
(5)
(4)
(3)
(2)
(1)
0.055
0
-7
-6
-5
-4
-3
-2
-1
10
10
10
10
10
10
10
1
10
t
(s)
p
(1) = 1 %
(2) = 2 %
(3) = 5 %
(4) = 10 %
(5) = 20 %
(6) = 50 %
(7) = 100 % (DC)
Fig 1. Transient thermal impedance from junction to case as a function of pulse
duration
BLF178XR_BLF178XRS#5
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© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 5 — 1 September 2015
3 of 14
BLF178XR; BLF178XRS
Power LDMOS transistor
6. Characteristics
Table 6.
DC characteristics
Tj = 25 C; per section unless otherwise specified.
Symbol Parameter
Conditions
VGS = 0 V; ID = 5.5 mA
Min
Typ
Max
Unit
V(BR)DSS drain-source breakdown
voltage
110
-
-
V
VGS(th)
VGSq
IDSS
gate-source threshold voltage VDS = 10 V; ID = 550 mA 1.25
1.7
1.3
-
2.25
1.8
2.8
-
V
gate-source quiescent voltage VDS = 50 V; ID = 20 mA
0.8
V
drain leakage current
drain cut-off current
VGS = 0 V; VDS = 50 V
-
-
A
A
IDSX
VGS = VGS(th) + 3.75 V;
VDS = 10 V
77
IGSS
gate leakage current
VGS = 11 V; VDS = 0 V
-
-
-
280
-
nA
RDS(on) drain-source on-state
resistance
VGS = VGS(th) + 3.75 V;
ID = 19.25 A
0.07
Table 7.
AC characteristics
Tj = 25 C; per section unless otherwise specified.
Symbol Parameter Conditions
feedback capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz
Min Typ Max Unit
Crs
-
-
-
5.5
-
-
-
pF
pF
pF
Ciss
Coss
input capacitance
output capacitance
VGS = 0 V; VDS = 50 V; f = 1 MHz
VGS = 0 V; VDS = 50 V; f = 1 MHz
414
184
Table 8.
RF characteristics
Test signal: pulsed RF; tp = 100 s; = 20 %; f = 108 MHz; RF performance at VDS = 50 V;
IDq = 40 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit.
Symbol
Gp
Parameter
Conditions
PL = 1400 W
PL = 1400 W
PL = 1400 W
Min
27
-
Typ
28
Max
Unit
power gain
-
dB
dB
%
RLin
D
input return loss
drain efficiency
15
72
11
68
-
BLF178XR_BLF178XRS#5
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 5 — 1 September 2015
4 of 14
BLF178XR; BLF178XRS
Power LDMOS transistor
aaa-002330
900
C
oss
(pF)
600
300
0
0
10
20
30
40
(V)
50
V
DS
VGS = 0 V; f = 1 MHz.
Fig 2. Output capacitance as a function of drain-source voltage; typical values per
section
7. Test information
7.1 Ruggedness in class-AB operation
The BLF178XR and BLF178XRS are capable of withstanding a load mismatch
corresponding to VSWR > 65 : 1 through all phases under the following conditions:
V
DS = 50 V; IDq = 40 mA; PL = 1400 W pulsed; f = 108 MHz.
7.2 Impedance information
drain 1
gate 1
Z
Z
L
i
gate 2
drain 2
001aan207
Fig 3. Definition of transistor impedance
Table 9.
Typical push-pull impedance
Simulated Zi and ZL device impedance; impedance info at VDS = 50 V and PL = 1400 W.
f
Zi
ZL
(MHz)
108
()
()
2.35 j6.06
2.78 + j0.48
BLF178XR_BLF178XRS#5
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 5 — 1 September 2015
5 of 14
BLF178XR; BLF178XRS
Power LDMOS transistor
7.3 Test circuit
T2
C7
C5
+Vds
+Vgs
L5
C10
C12
R3
C14
C16
L7
L8
C1
C21
C22
L1
C3
C2 L2 L4
L3
C19
C18
C4
C17
C15
C20
R4
C13
L6
C11
+Vgs
C6
+Vds
C8
T1
aaa-003348
55.45 mm
21.6 mm
24.2 mm
51.5 mm
Printed-Circuit Board (PCB): RF 35; r = 3.5; thickness = 0.765 mm; thickness copper plating = 35 m.
See Table 10 for a list of components.
Fig 4. Component layout for class-AB production test circuit
Table 10. List of components
For test circuit see Figure 4.
Component
Description
Value
Remarks
[1]
C1, C2, C5, C6, C14,
C15, C21, C22
multilayer ceramic chip capacitor 1 nF
[1]
[1]
C3
multilayer ceramic chip capacitor 82 pF
multilayer ceramic chip capacitor 240 pF
multilayer ceramic chip capacitor 4.7 F; 50 V
C4
C7, C8
C10, C11
C12, C13
C16, C17
C18
electrolytic capacitor
2200 F; 63 V
multilayer ceramic chip capacitor 4.7 F; 100 V
multilayer ceramic chip capacitor 120 pF
multilayer ceramic chip capacitor 82 pF
multilayer ceramic chip capacitor 110 pF
multilayer ceramic chip capacitor 56 pF
[1]
[1]
[1]
[1]
C19
C20
L1, L2, L3, L4
1.5 turn 0.8 mm copper wire
5 turn 0.8 mm copper wire
2.5 turn 0.8 mm copper wire
D = 3 mm;
length = 2 mm
L5, L6
L7, L8
D = 3 mm;
length = 4.5 mm
D = 3 mm;
length = 3 mm
R3, R4
T1
SMD resistor
9.1
1206
semi rigid coax
semi rigid coax
25 ; 160 mm
25 ; 160 mm
UT-090C-25
UT-141C-25
T2
[1] American Technical Ceramics type 800B or capacitor of same quality.
BLF178XR_BLF178XRS#5
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 5 — 1 September 2015
6 of 14
BLF178XR; BLF178XRS
Power LDMOS transistor
7.4 Graphical data
The following figures are measured in a class-AB production test circuit.
7.4.1 1-Tone CW pulsed
aaa-003263
aaa-003262
67
32
30
28
26
24
80
60
40
20
0
G
η
D
(%)
p
P
L
(dB)
(dBm)
G
p
65
ldeal P
(1)
L
(2)
63
61
59
η
D
P
L
30
32
34
36
0
250
500
750 1000 1250 1500 1750
(W)
P (dBm)
P
i
L
VDS = 50 V; IDq = 40 mA; f = 108 MHz; tp = 100 s;
= 20 %.
VDS = 50 V; IDq = 40 mA; f = 108 MHz; tp = 100 s;
= 20 %.
(1) PL(1dB) = 61.3 dBm (1350 W)
(2) PL(3dB) = 61.9 dBm (1550 W)
Fig 5. Power gain and drain efficiency as function of
output power; typical values
Fig 6. Output power as a function of input power;
typical values
BLF178XR_BLF178XRS#5
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 5 — 1 September 2015
7 of 14
BLF178XR; BLF178XRS
Power LDMOS transistor
aaa-003264
aaa-003265
32
30
28
26
24
80
G
η
p
D
(dB)
(%)
(1)
(2)
(3)
(4)
60
40
20
0
(4)
(3)
(2)
(1)
0
250
500
750 1000 1250 1500 1750
(W)
0
250
500
750 1000 1250 1500 1750
P
P (W)
L
L
VDS = 50 V; f = 108 MHz; tp = 100 s; = 20 %.
VDS = 50 V; f = 108 MHz; tp = 100 s; = 20 %.
(1) IDq = 20 mA
(2) IDq = 40 mA
(3) IDq = 80 mA
(4) IDq = 160 mA
(1) IDq = 20 mA
(2) IDq = 40 mA
(3) IDq = 80 mA
(4) IDq = 160 mA
Fig 7. Power gain as a function of output power;
typical values
Fig 8. Drain efficiency as a function of output power;
typical values
aaa-003266
aaa-003267
31
80
(5)
(6)
(7)
(4)
(3)
(2)
G
p
η
D
(%)
(1)
(dB)
29
60
40
20
0
27
(6)
(7)
(5)
(4)
25
23
21
19
(3)
(2)
(1)
0
250
500
750 1000 1250 1500 1750
(W)
0
250
500
750 1000 1250 1500 1750
(W)
P
P
L
L
IDq = 40 mA; f = 108 MHz; tp = 100 s; = 20 %.
IDq = 40 mA; f = 108 MHz; tp = 100 s; = 20 %.
(1) VDS = 20 V
(2) VDS = 25 V
(3) VDS = 30 V
(4) VDS = 35 V
(5) VDS = 40 V
(6) VDS = 45 V
(7) VDS = 50 V
(1) VDS = 20 V
(2) VDS = 25 V
(3) VDS = 30 V
(4) VDS = 35 V
(5) VDS = 40 V
(6) VDS = 45 V
(7) VDS = 50 V
Fig 9. Power gain as a function of output power;
typical values
Fig 10. Drain efficiency as a function of output power;
typical values
BLF178XR_BLF178XRS#5
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 5 — 1 September 2015
8 of 14
BLF178XR; BLF178XRS
Power LDMOS transistor
8. Package outline
Flanged balanced ceramic package; 2 mounting holes; 4 leads
SOT539A
D
A
F
D
U
1
B
1
q
C
w
H
M
M
C
2
1
c
1
3
2
4
E
p
E
H
U
1
2
5
w
M
M
M
B
A
1
L
A
w
b
M
3
Q
e
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
D
D
e
E
E
F
H
H
L
p
Q
q
U
U
w
w
w
3
UNIT
1
1
1
1
2
1
2
11.81
11.56
3.30 2.26
3.05 2.01
4.7
4.2
31.55 31.52
30.94 30.96
9.50 9.53 1.75 17.12 25.53 3.48
9.30 9.27 1.50 16.10 25.27 2.97
41.28 10.29
41.02 10.03
0.18
0.10
35.56
1.400
0.25 0.51 0.25
0.010 0.020 0.010
mm
13.72
0.465
0.455
0.130 0.089
0.120 0.079
0.185
0.165
1.242 1.241
1.218 1.219
0.374 0.375 0.069 0.674 1.005 0.137
0.366 0.365 0.059 0.634 0.995 0.117
1.625 0.405
1.615 0.395
0.007
0.004
inches
Note
0.540
1. millimeter dimensions are derived from the original inch dimensions.
2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
10-02-02
12-05-02
SOT539A
Fig 11. Package outline SOT539A
BLF178XR_BLF178XRS#5
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 5 — 1 September 2015
9 of 14
BLF178XR; BLF178XRS
Power LDMOS transistor
Earless flanged balanced ceramic package; 4 leads
SOT539B
D
A
F
5
D
D
1
U
H
1
1
c
w
D
2
1
2
E
U
E
H
1
2
L
3
4
b
w
Q
3
e
0
5
10 mm
scale
Dimensions
(1)
Unit
A
b
c
D
D
E
E
e
F
H
H
1
L
Q
U
U
w
w
3
1
1
1
2
2
max 4.7 11.81 0.18 31.55 31.52 9.5
mm nom
min 4.2 11.56 0.10 30.94 30.96 9.3
max 0.185 0.465 0.007 1.242 1.241 0.374 0.375
inches nom
min 0.165 0.455 0.004 1.218 1.219 0.366 0.365
9.53
1.75 17.12 25.53 3.48 2.26 32.39 10.29
13.72
0.54
0.25 0.25
0.01 0.01
9.27
1.50 16.10 25.27 2.97 2.01 32.13 10.03
0.069 0.674 1.005 0.137 0.089 1.275 0.405
0.059 0.634 0.995 0.117 0.079 1.265 0.395
Note
1. millimeter dimensions are derived from the original inch dimensions.
sot539b_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
JEITA
12-05-02
13-05-24
SOT539B
Fig 12. Package outline SOT539B
BLF178XR_BLF178XRS#5
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© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 5 — 1 September 2015
10 of 14
BLF178XR; BLF178XRS
Power LDMOS transistor
9. Handling information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
10. Abbreviations
Table 11. Abbreviations
Acronym
CW
Description
Continuous Wave
ESD
ElectroStatic Discharge
HF
High Frequency
LDMOS
LDMOST
SMD
Laterally Diffused Metal-Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Surface Mounted Device
VSWR
Voltage Standing-Wave Ratio
11. Revision history
Table 12. Revision history
Document ID
Release date Data sheet status
20150901 Product data sheet
Change notice Supersedes
BLF178XR_BLF178XRS#5
Modifications:
-
BLF178XR_BLF178XRS v.4
• The format of this document has been redesigned to comply with the new identity
guidelines of Ampleon.
• Legal texts have been adapted to the new company name where appropriate.
BLF178XR_BLF178XRS v.4
BLF178XR_BLF178XRS v.3
BLF178XR_BLF178XRS v.2
BLF178XR_BLF178XRS v.1
<tbd>
Product data sheet
-
BLF178XR_BLF178XRS v.3
BLF178XR_BLF178XRS v.2
BLF178XR_BLF178XRS v.1
-
20120625
20120515
20120130
Product data sheet
-
Preliminary data sheet -
Objective data sheet
-
BLF178XR_BLF178XRS#5
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 5 — 1 September 2015
11 of 14
BLF178XR; BLF178XRS
Power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.ampleon.com.
Ampleon product can reasonably be expected to result in personal injury,
12.2 Definitions
death or severe property or environmental damage. Ampleon and its
suppliers accept no liability for inclusion and/or use of Ampleon products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Ampleon does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Ampleon makes no representation
or warranty that such applications will be suitable for the specified use without
further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Ampleon sales office. In
case of any inconsistency or conflict with the short data sheet, the full data
sheet shall prevail.
Customers are responsible for the design and operation of their applications
and products using Ampleon products, and Ampleon accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Ampleon product is suitable and
fit for the customer’s applications and products planned, as well as for the
planned application and use of customer’s third party customer(s). Customers
should provide appropriate design and operating safeguards to minimize the
risks associated with their applications and products.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Ampleon and its customer, unless Ampleon and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be valid
in which the Ampleon product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
Ampleon does not accept any liability related to any default, damage, costs or
problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Ampleon products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Ampleon does not accept any
liability in this respect.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, Ampleon does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. Ampleon takes no responsibility for
the content in this document if provided by an information source outside of
Ampleon.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
In no event shall Ampleon be liable for any indirect, incidental, punitive,
special or consequential damages (including - without limitation - lost profits,
lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale — Ampleon products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.ampleon.com/terms, unless otherwise agreed in a valid written
individual agreement. In case an individual agreement is concluded only the
terms and conditions of the respective agreement shall apply. Ampleon
hereby expressly objects to applying the customer’s general terms and
conditions with regard to the purchase of Ampleon products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Ampleon’ aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Ampleon.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Right to make changes — Ampleon reserves the right to make changes to
information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
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Suitability for use — Ampleon products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction of an
BLF178XR_BLF178XRS#5
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 5 — 1 September 2015
12 of 14
BLF178XR; BLF178XRS
Power LDMOS transistor
Non-automotive qualified products — Unless this data sheet expressly
states that this specific Ampleon product is automotive qualified, the product
is not suitable for automotive use. It is neither qualified nor tested in
accordance with automotive testing or application requirements. Ampleon
accepts no liability for inclusion and/or use of non-automotive qualified
products in automotive equipment or applications.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Any reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own Any
reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own
trademarks.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without Ampleon’ warranty of the product for such
automotive applications, use and specifications, and (b) whenever customer
uses the product for automotive applications beyond Ampleon’ specifications
such use shall be solely at customer’s own risk, and (c) customer fully
indemnifies Ampleon for any liability, damages or failed product claims
resulting from customer design and use of the product for automotive
applications beyond Ampleon’ standard warranty and Ampleon’ product
specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
13. Contact information
For more information, please visit:
http://www.ampleon.com
For sales office addresses, please visit:
http://www.ampleon.com/sales
BLF178XR_BLF178XRS#5
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 5 — 1 September 2015
13 of 14
BLF178XR; BLF178XRS
Power LDMOS transistor
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits. . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2
3
4
5
6
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
7
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 5
Ruggedness in class-AB operation . . . . . . . . . 5
Impedance information . . . . . . . . . . . . . . . . . . . 5
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 7
1-Tone CW pulsed . . . . . . . . . . . . . . . . . . . . . . 7
7.1
7.2
7.3
7.4
7.4.1
8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Handling information. . . . . . . . . . . . . . . . . . . . 11
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
12.1
12.2
12.3
12.4
13
14
Contact information. . . . . . . . . . . . . . . . . . . . . 13
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© Ampleon The Netherlands B.V. 2015.
All rights reserved.
For more information, please visit: http://www.ampleon.com
For sales office addresses, please visit: http://www.ampleon.com/sales
Date of release: 1 September 2015
Document identifier: BLF178XR_BLF178XRS#5
相关型号:
BLF1820-90,112
TRANSISTOR UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC, FM-2, FET RF Power
NXP
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