BLF8G24LS-150GVQ [ETC]
RF FET LDMOS 65V 19DB SOT1244C;
| 型号： | BLF8G24LS-150GVQ |
| 厂家： | 
ETC |
| 描述： | RF FET LDMOS 65V 19DB SOT1244C |
| 文件： | 总16页 (文件大小：1243K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BLF8G24LS-150V;
BLF8G24LS-150GV
Power LDMOS transistor
Rev. 4 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
150 W LDMOS power transistor with improved video bandwidth for base station
applications at frequencies from 2300 MHz to 2400 MHz.
Table 1.
Typical performance
Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal
f
IDq
VDS PL(AV)
Gp
(dB) (%) (dBc)
19 33
30 [1]
D
ACPR5M
(MHz)
(mA)
1300
(V)
(W)
2-carrier W-CDMA
2300 to 2400
28
45
[1] 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing 5 MHz.
Channel bandwidth is 3.84 MHz.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low thermal resistance providing excellent thermal stability
Decoupling leads to enable improved video bandwidth (70 MHz typical)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent digital pre-distortion capability
Internally matched for ease of use
Integrated ESD protection
Design optimized for gull-wing
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for base stations and multi carrier applications in the 2300 MHz to
2400 MHz frequency range
BLF8G24LS-150(G)V
Power LDMOS transistor
2. Pinning information
Table 2.
Pinning
Description
Pin
Simplified outline
Graphic symbol
BLF8G24LS-150V (SOT1244B)
1
2
3
4
5
6
7
drain
4
1
5
1
gate
4,5
6,7
2
[1]
source
decoupling lead
decoupling lead
n.c.
3
3
aaa-003619
6
2
7
n.c.
BLF8G24LS-150GV (SOT1244C)
1
2
3
4
5
6
7
drain
4
1
5
1
gate
4,5
6,7
2
[1]
source
decoupling lead
decoupling lead
n.c.
3
aaa-003619
6
2
7
3
n.c.
[1] Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name Description
Version
BLF8G24LS-150V
-
earless flanged ceramic package; 6 leads
earless flanged ceramic package; 6 leads
SOT1244B
SOT1244C
BLF8G24LS-150GV -
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
Unit
V
drain-source voltage
gate-source voltage
storage temperature
junction temperature
-
65
VGS
Tstg
0.5 +13
V
65
+150 C
[1]
Tj
-
225
C
[1] Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF
calculator.
BLF8G24LS-150V_8G24LS-150GV#4
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
2 of 16
BLF8G24LS-150(G)V
Power LDMOS transistor
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol Parameter
Conditions
Typ
Unit
Rth(j-c)
thermal resistance from junction to case Tcase = 80 C; PL = 45 W
0.30 K/W
6. Characteristics
Table 6.
DC characteristics
Tj = 25 C unless otherwise specified.
Symbol Parameter
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 2.16 mA
Conditions
Min Typ Max Unit
65
-
-
V
V
V
VGS(th)
VGSq
IDSS
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
VDS = 10 V; ID = 216 mA
VDS = 28 V; ID = 1300 mA
VGS = 0 V; VDS = 28 V
1.5 1.9 2.3
1.6
2
2.4
-
-
-
4.5 A
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
40
-
A
IGSS
gfs
gate leakage current
VGS = 11 V; VDS = 0 V
VDS = 10 V; ID = 10.8 A
-
-
-
-
450 nA
forward transconductance
16
-
S
RDS(on)
drain-source on-state resistance VGS = VGS(th) + 3.75 V;
ID = 7.56 A
0.06 -
Table 7.
RF characteristics
Test signal: 2-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability
on the CCDF, carrier spacing 5 MHz; f1 = 2302.5 MHz; f2 = 2307.5 MHz; f3 = 2392.5 MHz;
f4 = 2397.5 MHz; RF performance at VDS = 28 V; IDq = 1300 mA; Tcase = 25 C; unless otherwise
specified; in a class-AB production test circuit.
Symbol Parameter
Conditions
Min
17.5
-
Typ Max
19
10 7
33
30 27
Unit
dB
Gp
power gain
PL(AV) = 45 W
PL(AV) = 45 W
PL(AV) = 45 W
-
RLin
D
input return loss
drain efficiency
dB
29
-
-
%
ACPR5M adjacent channel power ratio (5 MHz) PL(AV) = 45 W
dBc
7. Test information
7.1 Ruggedness in class-AB operation
The BLF8G24LS-150V and BLF8G24LS-150GV are capable of withstanding a load
mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: VDS = 28 V; IDq = 1300 mA; PL = 150 W (CW); f = 2300 MHz.
BLF8G24LS-150V_8G24LS-150GV#4
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
3 of 16
BLF8G24LS-150(G)V
Power LDMOS transistor
7.2 Impedance information
Table 8.
Typical impedance
Measured load-pull data; IDq = 1300 mA; VDS = 28 V.
[1]
[1]
f
ZS
ZL
(MHz)
()
()
BLF8G24LS-150V
2300
1.25 j4.11
2.34 j5.50
5.65 j6.35
2.95 j1.20
2.88 j1.31
2.80 j1.35
2400
2500
BLF8G24LS-150GV
2300
2400
2500
1.29 j5.78
2.15 j7.09
6.61 j7.57
3.13 j3.26
2.78 j3.44
2.98 j3.66
[1] ZS and ZL defined in Figure 1.
drain
Z
L
gate
Z
S
001aaf059
Fig 1. Definition of transistor impedance
BLF8G24LS-150V_8G24LS-150GV#4
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© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
4 of 16
BLF8G24LS-150(G)V
Power LDMOS transistor
7.3 VBW in a class-AB operation
The BLF8G24LS-150V shows 70 MHz (typical) video bandwidth (IMD third-order
intermodulation inflection point) in a class-AB test circuit in the 2.3 GHz to 2.4 GHz band
at VDS = 28 V and IDq = 1.3 A.
aaa-010632
-10
IMDD
(dBc)
-20
(1))
(2))
IMD3
-30
(1))
(2))
IMD5
-40
(1))
(2))
IMD7
-50
-60
-70
2
1
10
10
carrier spacing (MHz)
VDS = 28 V; IDq = 1300 mA; fc = 2350 MHz.
(1) low
(2) high
Fig 2. VBW capacity in class-AB test circuit
7.4 Test circuit
50 mm
50 mm
C8
C3
R1
C2
C7
C5
C4
C6
C14
C13
T1
C1
C9
60 mm
C10
C12
C11
aaa-010634
Printed-Circuit Board (PCB): Rogers 4350B with a thickness of 0.76 mm. See Table 9 for a list of
components.
Fig 3. Component layout
BLF8G24LS-150V_8G24LS-150GV#4
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© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
5 of 16
BLF8G24LS-150(G)V
Power LDMOS transistor
Table 9.
List of components
See Figure 3 for component layout.
Component
Description
Value
Remarks
ATC 800B
Murata
[1]
[2]
[2]
[1]
[2]
[2]
C1
multilayer ceramic chip capacitor 1.2 pF
multilayer ceramic chip capacitor 1 F
multilayer ceramic chip capacitor 100 nF
multilayer ceramic chip capacitor 24 pF
multilayer ceramic chip capacitor 220 nF
C2
C3
Murata
C4, C5, C9, C12
C6, C11
ATC 800B
Murata
C7, C10, C13, C14 multilayer ceramic chip capacitor 4.7 F, 50 V
Murata
C8
R1
electrolytic capacitor
chip resistor
> 470 F, 63 V
4.7 ,
SMD 0805
1 % tolerance
T1
transistor
-
Ampleon
BLF8G24LS-150V
[1] American Technical Ceramics type 800B or capacitor of same quality.
[2] Murata or capacitor of same quality.
7.5 Graphical data
7.5.1 Pulsed CW
aaa-010615
aaa-010616
21
20
19
18
17
16
60
G
η
D
(%)
p
(dB)
50
40
30
20
10
0
(3)
(2)
(1)
(3))
(2))
(1))
35
39
43
47
51
55
35
39
43
47
51
55
P
(dBm)
P
L
(dBm)
L
VDS = 28 V; IDq = 1300 mA; tp = 100 s; = 10 %.
VDS = 28 V; IDq = 1300 mA; tp = 100 s; = 10 %.
(1) f = 2300 MHz
(2) f = 2350 MHz
(3) f = 2400 MHz
(1) f = 2300 MHz
(2) f = 2350 MHz
(3) f = 2400 MHz
Fig 4. Power gain as a function of output power;
typical values
Fig 5. Drain efficiency as a function of out power;
typical values
BLF8G24LS-150V_8G24LS-150GV#4
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
6 of 16
BLF8G24LS-150(G)V
Power LDMOS transistor
7.5.2 IS-95
aaa-010617
aaa-010618
22
21
20
19
18
17
40
30
20
10
0
G
η
D
(%)
p
(dB)
(1))
(2))
(3))
(3)
(2)
(1)
28
32
36
40
44
(dBm)
48
35
37
39
41
43
45
47
49
P
P
L
(dBm)
L
VDS = 28 V; IDq = 1300 mA.
VDS = 28 V; IDq = 1300 mA.
(1) f = 2305 MHz
(2) f = 2350 MHz
(3) f = 2395 MHz
(1) f = 2305 MHz
(2) f = 2350 MHz
(3) f = 2395 MHz
Fig 6. Power gain as a function of output power;
typical values
Fig 7. Drain efficiency as a function of output power;
typical values
aaa-010619
aaa-010620
-30
8855kk
(dBc)
-50
ACPR
ACPR
198800kk
(dBc)
-55
-60
-65
-70
-75
-80
(1))
(2))
(3))
-40
-50
-60
-70
(1))
(2))
(3))
35
37
39
41
43
45
47
49
35
37
39
41
43
45
47
49
P
(dBm)
P
(dBm)
L
L
VDS = 28 V; IDq = 1300 mA.
VDS = 28 V; IDq = 1300 mA.
(1) f = 2305 MHz
(2) f = 2350 MHz
(3) f = 2395 MHz
(1) f = 2305 MHz
(2) f = 2350 MHz
(3) f = 2395 MHz
Fig 8. Adjacent channel power ratio (885 kHz) as a
function of output power; typical values
Fig 9. Adjacent channel power ratio (1980 kHz) as a
function of output power; typical values
BLF8G24LS-150V_8G24LS-150GV#4
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
7 of 16
BLF8G24LS-150(G)V
Power LDMOS transistor
aaa-010621
aaa-010622
12
10
8
56
PARR
(dB)
P
L(MM))
(dBm)
54
(1)
(2)
(3)
52
50
48
46
(1))
(2))
(3))
6
4
35
37
39
41
43
45
47
49
35
37
39
41
43
45
47
49
P
(dBm)
P
L
(dBm)
L
VDS = 28 V; IDq = 1300 mA.
VDS = 28 V; IDq = 1300 mA.
(1) f = 2305 MHz
(2) f = 2350 MHz
(3) f = 2395 MHz
(1) f = 2305 MHz
(2) f = 2350 MHz
(3) f = 2395 MHz
Fig 10. Peak-to-average ratio as a function of output
power; typical values
Fig 11. Peak output power as a function of output
power; typical values
7.5.3 1-Carrier W-CDMA
aaa-010623
aaa-010624
21
50
G
η
D
(%)
p
(dB)
20
19
18
17
16
40
30
20
10
0
(1))
(2))
(3))
(3)
(2)
(1)
36
38
40
42
44
46
48
50
52
36
38
40
42
44
46
48 50
P (dBm)
L
52
P
(dBm)
L
VDS = 28 V; IDq = 1300 mA.
VDS = 28 V; IDq = 1300 mA.
(1) f = 2302.5 MHz
(2) f = 2350 MHz
(3) f = 2397.5 MHz
(1) f = 2302.5 MHz
(2) f = 2350 MHz
(3) f = 2397.5 MHz
Fig 12. Power gain as a function of output power;
typical values
Fig 13. Drain efficiency as a function of output power;
typical values
BLF8G24LS-150V_8G24LS-150GV#4
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
8 of 16
BLF8G24LS-150(G)V
Power LDMOS transistor
aaa-010625
aaa-010626
8
7
6
5
4
3
16
15
14
13
12
11
PARR
(dB)
RL
in
(dB)
(3))
(1))
(2))
(1)
(2)
(3)
36
38
40
42
44
46
48
50
52
36
38
40
42
44
46
48 50
P (dBm)
L
52
P
(dBm)
L
VDS = 28 V; IDq = 1300 mA.
VDS = 28 V; IDq = 1300 mA.
(1) f = 2302.5 MHz
(2) f = 2350 MHz
(3) f = 2397.5 MHz
(1) f = 2302.5 MHz
(2) f = 2350 MHz
(3) f = 2397.5 MHz
Fig 14. Peak-to-average ratio as a function of output
power; typical values
Fig 15. Input return loss as a function of output
power; typical values
7.5.4 2-Carrier W-CDMA
aaa-010627
aaa-010628
22
50
G
η
D
(%)
p
(dB)
21
20
19
18
17
40
30
20
10
0
(1))
(2))
(3))
(3)
(2)
(1)
36
38
40
42
44
46
48
50
52
36
38
40
42
44
46
48 50
P (dBm)
L
52
P
(dBm)
L
VDS = 28 V; IDq = 1300 mA.
VDS = 28 V; IDq = 1300 mA.
(1) f = 2305 MHz
(2) f = 2350 MHz
(3) f = 2395 MHz
(1) f = 2305 MHz
(2) f = 2350 MHz
(3) f = 2395 MHz
Fig 16. Power gain as a function of output power;
typical values
Fig 17. Drain efficiency as a function of output power;
typical values
BLF8G24LS-150V_8G24LS-150GV#4
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
9 of 16
BLF8G24LS-150(G)V
Power LDMOS transistor
aaa-010629
14
13
12
11
10
9
RL
in
(3))
(1))
(dB)
(2))
36
38
40
42
44
46
48
50
52
P
(dBm)
L
VDS = 28 V; IDq = 1300 mA.
(1) f = 2305 MHz
(2) f = 2350 MHz
(3) f = 2395 MHz
Fig 18. Input return loss as a function of output power; typical values
aaa-010630
aaa-010631
-20
5M
-20
ACPR
ACPR
10MM
(dBc)
(dBc)
-28
-36
-44
-52
-60
-30
(1)
(2)
(3)
-40
-50
-60
(1))
(2))
(3))
35
37
39
41
43
45
47
49
51
35
37
39
41
43
45
47 49
P (dBm)
L
51
P
(dBm)
L
VDS = 28 V; IDq = 1300 mA.
VDS = 28 V; IDq = 1300 mA.
(1) f = 2305 MHz
(2) f = 2350 MHz
(3) f = 2395 MHz
(1) f = 2305 MHz
(2) f = 2350 MHz
(3) f = 2395 MHz
Fig 19. Adjacent channel power ratio (5 MHz) as a
function of output power; typical values
Fig 20. Adjacent channel power ratio (10 MHz) as a
function of output power; typical values
BLF8G24LS-150V_8G24LS-150GV#4
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
10 of 16
BLF8G24LS-150(G)V
Power LDMOS transistor
8. Package outline
Earless flanged ceramic package; 6 leads
SOT1244B
D
A
F
3
C
B
D
U
1
1
e
c
v
A
4
1
5
y
E
U
2
H
E
1
A
6
2
7
Q
b
b
1
w
2
B
0
5
10 mm
scale
Dimensions
(1)
(2)
Q
Unit
A
b
b
c
D
D
1
e
E
E
F
H
U
1
U
2
v
w
2
y
1
1
max 4.75
nom
1.41 12.83 0.18 20.02 19.96
9.53 9.53 1.14 19.94 1.70 20.70 9.91 0.25 0.25 0.25
18.03
0.710
mm
min 3.45
1.14 12.57 0.10 19.61 19.66
9.27 9.27 0.89 18.92 1.45 20.45 9.65
0.375 0.375 0.045 0.785 0.067 0.815 0.39 0.01 0.01 0.01
max 0.187 0.055 0.505 0.007 0.788 0.786
nom
min 0.136 0.045 0.495 0.004 0.772 0.774
inches
Note
0.365 0.365 0.035 0.745 0.057 0.805 0.38
1. Millimeter dimensions are derived from the original inch dimensions.
2. Dimension is measured 0.030 inch (0.76 mm) from body.
sot1244b_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
JEITA
12-04-18
12-05-07
SOT1244B
Fig 21. Package outline SOT1244B
BLF8G24LS-150V_8G24LS-150GV#4
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© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
11 of 16
BLF8G24LS-150(G)V
Power LDMOS transistor
Earless flanged ceramic package; 6 leads
SOT1244C
0.3 mm gauge plane
D
L
p
F
A
3
D
1
y
Q
detail X
v
A
U
1
c
B
X
4
1
5
E
U
2
E
H
1
6
2
7
A
b
b
1
w
2
B
θ
e
0
5
10 mm
scale
Dimensions
(1)
Unit
A
b
b
c
D
D
1
e
E
E
F
H
L
Q
U
1
U
2
v
w
2
y
θ
1
1
p
°
max 4.75
nom
1.41 12.83 0.18 20.02 19.96
9.53 9.53 1.14 14.3 1.38 0.195 20.70 9.91 0.25 0.25 0.15
7
18.03
mm
°
°
min 3.45
1.14 12.57 0.10 19.61 19.66
9.27 9.27 0.89 14.1 0.98 0.055 20.45 9.65
0.375 0.375 0.045 0.563 0.055 0.008 0.815 0.39 0.01 0.01 0.006
0
7
max 0.187 0.055 0.505 0.007 0.788 0.786
nom
min 0.136 0.045 0.495 0.004 0.772 0.774
0.710
inches
Note
°
0.365 0.365 0.035 0.555 0.039 0.002 0.805 0.38
0
1. Millimeter dimensions are derived from the original inch dimensions.
sot1244c_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
JEITA
12-05-10
12-05-30
SOT1244C
Fig 22. Package outline SOT1244C
BLF8G24LS-150V_8G24LS-150GV#4
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© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
12 of 16
BLF8G24LS-150(G)V
Power LDMOS transistor
9. Handling information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
10. Abbreviations
Table 10. Abbreviations
Acronym
3GPP
CCDF
CW
Description
3rd Generation Partnership Project
Complementary Cumulative Distribution Function
Continuous Wave
DPCH
ESD
Dedicated Physical CHannel
ElectroStatic Discharge
IS-95
Interim Standard 95
LDMOS
MTF
Laterally Diffused Metal Oxide Semiconductor
Median Time to Failure
PAR
Peak-to-Average Ratio
SMD
Surface Mounted Device
VBW
Video BandWidth
VSWR
W-CDMA
Voltage Standing Wave Ratio
Wideband Code Division Multiple Access
11. Revision history
Table 11. Revision history
Document ID
Release date Data sheet status
20150901 Product data sheet
Change notice Supersedes
BLF8G24LS-150V_8G24LS-150GV#4
BLF8G24LS-150V_
8G24LS-150GV v.3
Modifications:
• The format of this document has been redesigned to comply with the new
identity guidelines of Ampleon.
• Legal texts have been adapted to the new company name where
appropriate.
BLF8G24LS-150V_8G24LS-150GV v.3
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BLF8G24LS-150V_8G24LS-150GV v.1
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Product data sheet
Objective data sheet
Objective data sheet
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BLF8G24LS-150V_8G24LS-150GV#4
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
13 of 16
BLF8G24LS-150(G)V
Power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.ampleon.com.
Ampleon product can reasonably be expected to result in personal injury,
12.2 Definitions
death or severe property or environmental damage. Ampleon and its
suppliers accept no liability for inclusion and/or use of Ampleon products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Ampleon does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Ampleon makes no representation
or warranty that such applications will be suitable for the specified use without
further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Ampleon sales office. In
case of any inconsistency or conflict with the short data sheet, the full data
sheet shall prevail.
Customers are responsible for the design and operation of their applications
and products using Ampleon products, and Ampleon accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Ampleon product is suitable and
fit for the customer’s applications and products planned, as well as for the
planned application and use of customer’s third party customer(s). Customers
should provide appropriate design and operating safeguards to minimize the
risks associated with their applications and products.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Ampleon and its customer, unless Ampleon and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be valid
in which the Ampleon product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
Ampleon does not accept any liability related to any default, damage, costs or
problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Ampleon products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Ampleon does not accept any
liability in this respect.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, Ampleon does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. Ampleon takes no responsibility for
the content in this document if provided by an information source outside of
Ampleon.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
In no event shall Ampleon be liable for any indirect, incidental, punitive,
special or consequential damages (including - without limitation - lost profits,
lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale — Ampleon products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.ampleon.com/terms, unless otherwise agreed in a valid written
individual agreement. In case an individual agreement is concluded only the
terms and conditions of the respective agreement shall apply. Ampleon
hereby expressly objects to applying the customer’s general terms and
conditions with regard to the purchase of Ampleon products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Ampleon’ aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Ampleon.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Right to make changes — Ampleon reserves the right to make changes to
information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Suitability for use — Ampleon products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction of an
BLF8G24LS-150V_8G24LS-150GV#4
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
14 of 16
BLF8G24LS-150(G)V
Power LDMOS transistor
Non-automotive qualified products — Unless this data sheet expressly
states that this specific Ampleon product is automotive qualified, the product
is not suitable for automotive use. It is neither qualified nor tested in
accordance with automotive testing or application requirements. Ampleon
accepts no liability for inclusion and/or use of non-automotive qualified
products in automotive equipment or applications.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Any reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own Any
reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own
trademarks.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without Ampleon’ warranty of the product for such
automotive applications, use and specifications, and (b) whenever customer
uses the product for automotive applications beyond Ampleon’ specifications
such use shall be solely at customer’s own risk, and (c) customer fully
indemnifies Ampleon for any liability, damages or failed product claims
resulting from customer design and use of the product for automotive
applications beyond Ampleon’ standard warranty and Ampleon’ product
specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
13. Contact information
For more information, please visit:
http://www.ampleon.com
For sales office addresses, please visit:
http://www.ampleon.com/sales
BLF8G24LS-150V_8G24LS-150GV#4
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
15 of 16
BLF8G24LS-150(G)V
Power LDMOS transistor
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits. . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2
3
4
5
6
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7
7.1
7.2
7.3
7.4
7.5
7.5.1
7.5.2
7.5.3
7.5.4
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation . . . . . . . . . 3
Impedance information . . . . . . . . . . . . . . . . . . . 4
VBW in a class-AB operation . . . . . . . . . . . . . . 5
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 6
Pulsed CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
IS-95. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
1-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 8
2-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 9
8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
Handling information. . . . . . . . . . . . . . . . . . . . 13
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 14
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15
12.1
12.2
12.3
12.4
13
14
Contact information. . . . . . . . . . . . . . . . . . . . . 15
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© Ampleon The Netherlands B.V. 2015.
All rights reserved.
For more information, please visit: http://www.ampleon.com
For sales office addresses, please visit: http://www.ampleon.com/sales
Date of release: 1 September 2015
Document identifier: BLF8G24LS-150V_8G24LS-150GV#4
相关型号：
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